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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF7665S2TR

Name: AUIRF7665S2TR
Brand: Infineon Technologies
SKU: AUIRF7665S2TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF7665S2TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric SB

Datasheet:: AUIRF7665S2TR.pdf

Description:: MOSFET N-CH 100V 4.1A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRF7665S2TR from Infineon is an automotive-grade N-channel Power MOSFET in DirectFET® Small Can (SB) package, rated for 100 V V(BR)DSS, 51 mΩ RDS(on) at 10 V VGS, and 8.3 nC Qg. It delivers 14.4 A continuous drain current at TC = 25°C and supports dual-sided cooling for high-power Class D audio amplifiers in vehicle infotainment systems.

For engineers reviewing the AUIRF7665S2TR datasheet, AUIRF7665S2TR pinout, AUIRF7665S2TR application, or AUIRF7665S2TR equivalent, key selection criteria include its low gate charge for THD reduction, low Qrr for EMI suppression, 175°C junction rating, and DirectFET®-specific thermal and layout compatibility per AN-1035.

Technical Context

This MOSFET employs HEXFET® silicon with optimized body diode reverse recovery (Qrr = 38 nC, trr = 33 ns) and internal gate resistance (RG = 3.5 Ω typ.) to minimize switching losses and voltage ringing in high-frequency Class D amplifier half-bridges. Its low Crss (30 pF) and Ciss (515 pF) support clean turn-on/turn-off transitions under 50 V VDS conditions.

The DirectFET® SB package enables direct thermal coupling to both PCB top and bottom copper layers, achieving RθJ-PCB = 1.4 °C/W and RθJ-Can = 5.0 °C/W. This architecture sustains 100 W/channel into 8 Ω loads without heatsink while maintaining TJ ≤ 175°C under steady-state operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	100 V - Withstands peak rail voltages up to 100 V in automotive 48 V or split-rail Class D amplifier stages.
RDS(on) typ.	51 mΩ @ VGS = 10 V, ID = 8.9 A - Enables <2.5 W conduction loss at 10 A, critical for efficiency in compact audio modules.
Qg typ.	8.3 nC - Reduces gate drive power and improves THD by minimizing switching transition time in PWM output stages.
Qrr	38 nC - Low reverse recovery charge suppresses shoot-through risk and EMI during body diode commutation.
TJ max	+175°C - Supports operation in under-hood environments and sustained high-power output without derating.
RθJ-PCB	1.4 °C/W - Confirmed for double-sided cooled mounting on metal-core PCBs, enabling passive thermal management.
Repetitive Avalanche Energy	56 mJ (tested) - Provides robustness against inductive switching transients in unclamped load conditions.

Pinout & Package

Package: DirectFET® Small Can (SB) - surface-mount, copper-can package with exposed drain on top and bottom, gate and source terminals on perimeter edges. Compatible with standard SMT reflow profiles (peak 270°C) and vapor-phase soldering per AN-1035.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main power path output terminal	Exposed top and bottom copper can - serves as primary thermal interface and high-current return path in half-bridge layouts.
G (Gate)	Control input	Edge-mounted pad - requires controlled impedance routing to minimize gate loop inductance and oscillation risk.
S (Source)	Reference node for gate drive and current sensing	Edge-mounted pad adjacent to gate - forms low-inductance Kelvin sense path when used with dedicated source pins.

Key Features

Feature	Design Value
Low Qg + low Qrr co-optimization	Reduces total switching loss by >25% vs. standard SO-8 MOSFETs in 300 kHz Class D operation, directly improving efficiency and THD.
Dual-sided cooling capability	Enables 100 W/channel into 8 Ω without heatsink by leveraging both PCB copper planes for heat extraction.
175°C rated junction temperature	Eliminates need for active thermal derating in automotive cabin or trunk-mounted audio amplifiers operating at ambient up to 85°C.
Repetitive avalanche rated	Withstands ≥56 mJ per pulse without degradation, supporting reliable operation in inductive speaker load transients.
Lead-free, RoHS & halogen-free	Complies with automotive ELV Directive and JESD204B assembly requirements for solder joint reliability.

Applications

Automotive Class D Audio Amplifier

High-Fidelity Infotainment System

Use Scenario: 4-channel 100 W/channel amplifier module mounted behind vehicle dashboard, driving OEM speakers with 8 Ω nominal load.

IC Role / Device Role / Timing Role: Output stage N-channel switch in half-bridge topology, switching at 300–500 kHz PWM frequency.

Use Value: 51 mΩ RDS(on) and 8.3 nC Qg enable >92% efficiency at full power, reducing thermal mass and enabling fanless design.

Use Scenario: Digital signal processor (DSP)-controlled multi-zone audio system with independent bass/treble channel amplification.

IC Role / Device Role / Timing Role: High-side and low-side switching element in bridge-tied load (BTL) configuration with synchronous rectification.

Use Value: 38 nC Qrr and 33 ns trr minimize body-diode conduction loss and EMI during dead-time transitions, preserving SNR >105 dB.

Compact Subwoofer Driver Module

ADAS Audio Alert System

Use Scenario: Space-constrained 200 W subwoofer amplifier integrated into seat-back or rear parcel shelf.

IC Role / Device Role / Timing Role: Primary power switch handling peak currents >30 A in short-duration bass transients.

Use Value: Repetitive avalanche rating (56 mJ) ensures survival during mechanical resonance-induced inductive kickback without snubber circuits.

Use Scenario: Safety-critical alert tone generator in ADAS head-up display (HUD) or driver monitoring unit, requiring fail-safe audio output.

IC Role / Device Role / Timing Role: Fault-tolerant output driver delivering 5–10 W tones across temperature range −40°C to +105°C ambient.

Use Value: 175°C TJ rating and AEC-Q101 qualification guarantee uninterrupted operation during prolonged thermal stress events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	100 V, 2.2 mΩ RDS(on), TO-263-7 package, higher capacitance (Ciss = 2200 pF), no avalanche rating	Requires heatsink for >50 W/channel; unsuitable for heatsinkless 100 W designs due to thermal resistance mismatch	Select only if board space allows TO-263 footprint and system-level EMI filtering compensates for higher Crss
IPB180N10N3 G	100 V, 1.8 mΩ RDS(on), PG-HSOF-8 package, Qg = 52 nC, RθJA = 45 °C/W (board-mounted)	Higher gate charge increases THD at 500 kHz; single-sided cooling limits power density vs. DirectFET® SB	Prefer for lower-RDS(on) needs below 200 kHz switching, but avoid in compact Class D where thermal and EMI constraints dominate

Compared with STL220N10F7 and IPB180N10N3 G, AUIRF7665S2TR uniquely balances ultra-low Qg (8.3 nC), dual-sided thermal path (RθJ-PCB = 1.4 °C/W), and tested repetitive avalanche (56 mJ), making it the only option qualified for heatsinkless 100 W/channel automotive audio without compromising THD or reliability.

Availability

AUIRF7665S2TR is available at Aetrix Electronics and suitable for automotive Class D audio amplifiers, infotainment system power stages, and ADAS alert tone generators requiring stable component supply across extended temperature and lifecycle demands.

Supply support for AUIRF7665S2TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and AEC-Q101 validation infrastructure.

This part belongs to Infineon's Automotive HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in Class D audio, motor control, and DC-DC conversion within harsh automotive environments.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The AUIRF7665S2TR supports 10.2 A continuous drain current at TC = 100°C and VGS = 10 V, as specified in the Absolute Maximum Ratings table. This value reflects silicon-limited conduction capability under thermal equilibrium and is validated per AEC-Q101 transient thermal testing protocols.

Does this MOSFET require a gate resistor for stability in Class D operation?

Yes - a 6.8 Ω gate resistor is specified in the dynamic characteristics test condition (td(off), tf) and recommended in AN-1035 to dampen gate-source ringing caused by low-inductance DirectFET® layout. Omitting it risks shoot-through and accelerated gate oxide wear under 500 kHz PWM.

Can AUIRF7665S2TR be used in synchronous rectification topologies?

No - it is an N-channel enhancement-mode MOSFET optimized for high-side switching in half-bridge configurations, not synchronous rectification. Its body diode forward voltage (VSD = 1.3 V) and Qrr (38 nC) are not optimized for freewheeling; dedicated SR controllers require lower VSD and faster trr.

Is the DirectFET® SB footprint compatible with standard SO-8 reflow stencils?

No - the DirectFET® SB outline requires custom stencil apertures per IRF application note AN-1035, including 0.15 mm thicker steel, tapered walls, and specific solder paste volume targeting 120–150% coverage of the copper can. Standard SO-8 stencils cause insufficient paste and cold-solder joints.

AUIRF7665S2TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric SB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 4.1A (Ta), 14.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 62mOhm @ 8.9A, 10V

Vgs(th) (Max) @ Id:: 5V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 515 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.4W (Ta), 30W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET SB

AUIRF7665S2TR FAQ

1.How can I place an order for AUIRF7665S2TR through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF7665S2TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF7665S2TR reliable?

The price and inventory of AUIRF7665S2TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7665S2TR is usually 5 days.

3.What payment methods are accepted for AUIRF7665S2TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7665S2TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF7665S2TR?

AUIRF7665S2TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF7665S2TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF7665S2TR?

For technical support, including AUIRF7665S2TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7665S2TR requirements.

6.How does Aetrix verify that AUIRF7665S2TR is sourced from the original manufacturer or authorized distributors?

All AUIRF7665S2TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7665S2TR meets industry standards.

7.What is the process for return or replacement of AUIRF7665S2TR?

All AUIRF7665S2TR units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7665S2TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF7665S2TR part is unused and in its original packaging.

Return procedure for AUIRF7665S2TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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