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Infineon Technologies AUIRF7738L2TR
- Part No.:
- AUIRF7738L2TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric L6
- Datasheet:
-
AUIRF7738L2TR.pdf
- Description:
- MOSFET N-CH 40V 35A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:6,929
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Product details
Overview
AUIRF7738L2TR from Infineon is an automotive-grade N-channel Power MOSFET in DirectFET® L6 package, rated for 40 V V(BR)DSS, 1.2 mΩ RDS(on) typ. at 10 V VGS, and 184 A continuous drain current (TC = 25°C). It delivers high power density and dual-sided cooling capability for motor drive and high-frequency DC-DC converters in ICE, HEV, and EV platforms.
For engineers reviewing the AUIRF7738L2TR datasheet, AUIRF7738L2TR pinout, AUIRF7738L2TR application, or AUIRF7738L2TR equivalent, key selection criteria include its 175°C junction temperature rating, 129 nC total gate charge, low-profile 0.7 mm DirectFET® L6 footprint compatible with DPak layouts, and repetitive avalanche energy rating of 134 mJ (single-pulse).
Technical Context
This MOSFET integrates HEXFET® silicon with DirectFET® L6 packaging to achieve ultra-low RDS(on) and Qg per unit area while enabling thermal management via top-side (Drain) and bottom-side PCB cooling paths. Its gate threshold voltage (2.0–4.0 V) and negative temperature coefficient of VGS(th) support stable switching across -55°C to +175°C.
The device features low parasitic capacitances (Ciss = 7471 pF, Crss = 737 pF), fast switching (td(on) = 21 ns, tf = 38 ns), and robust unclamped inductive switching performance validated up to 736 A pulsed drain current and 102 nC reverse recovery charge under defined test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 40 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 12/24/48 V automotive bus systems. |
| RDS(on) typ. | 1.2 mΩ @ VGS = 10 V, ID = 109 A - Enables <1.3 W conduction loss at 100 A, critical for high-efficiency traction inverters and starter-generators. |
| ID (TC = 25°C) | 184 A - Silicon-limited continuous current; supports peak load handling in electric power steering and HVAC compressors without derating. |
| Qg typ. | 129 nC - Total gate charge determines driver strength requirement; enables efficient 100 kHz+ switching in isolated DC-DC stages. |
| TJ max | +175°C - Extended junction temperature rating allows operation in under-hood environments without active cooling. |
| EAS (tested) | 538 mJ - Validated single-pulse avalanche energy ensures ruggedness against inductive kickback in motor phase-legs. |
| RθJ-PCB | 0.5 °C/W - Low junction-to-PCB thermal resistance enables >90% of heat to be extracted through copper pads, reducing heatsink dependency. |
Pinout & Package
Package: DirectFET® L6 (Large Can), surface-mount, 0.7 mm profile, footprint compatible with TO-252AA (DPak) PCB layouts. Features exposed Drain (top and bottom), Gate, and Source terminals optimized for dual-sided thermal transfer and low-inductance power routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Top & Bottom) | Drain | Electrically common top and bottom metal surfaces serve as primary heat path and high-current return node; requires full copper fill on both PCB sides. |
| G | Gate | Single gate pad located between Drain and Source; designed for low-inductance gate drive routing adjacent to source return path. |
| S (All 6) | Source | Six discrete Source terminals distributed around perimeter; minimize source inductance and enable Kelvin sensing in high-accuracy current monitoring. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-sided cooling architecture | Direct thermal path from junction to both top (Drain can) and bottom (PCB copper); reduces effective RθJA by >65% vs. standard SO-8. |
| Repetitive avalanche capability | Rated for repeated unclamped inductive switching up to 134 mJ (thermally limited) and 538 mJ (tested), ensuring reliability in motor fault conditions. |
| Low-profile 0.7 mm height | Enables integration into space-constrained modules (e.g., e-axle inverters) while maintaining mechanical robustness and solder joint reliability. |
| 175°C operation with lead-free RoHS/Halogen-free compliance | Qualified to AEC-Q101; supports extended lifetime in under-hood applications without thermal throttling or derating penalties. |
| Optimized for high-frequency DC-DC | Low Crss (737 pF) and Qgd (45 nC) minimize Miller effect, enabling clean turn-off at >200 kHz in 48 V–12 V bidirectional converters. |
Applications
| Electric Power Steering (EPS) | 48 V–12 V Bidirectional DC-DC Converter |
|---|---|
|
Use Scenario: High-current H-bridge driving brushless motor in column-assist EPS systems with peak loads up to 150 A. IC Role / Device Role / Timing Role: Primary low-side and high-side switching element in three-phase inverter stage; handles PWM switching at 10–20 kHz with precise dead-time control. Use Value: 1.2 mΩ RDS(on) limits conduction loss to <2.7 W at 150 A, reducing thermal stress and enabling passive cooling in compact ECU housings. |
Use Scenario: Synchronous rectification and primary-side switching in dual-active-bridge (DAB) topology converting 48 V battery to 12 V auxiliary supply. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET; operates in ZVS mode at 100–300 kHz with body diode conduction minimized by low VSD (1.3 V). Use Value: 129 nC Qg and 45 nC Qgd allow efficient gate driving with <1 W driver loss, improving overall converter efficiency to >96% at 3 kW output. |
| Onboard Charger (OBC) AC-DC Stage | Traction Inverter Half-Bridge Module |
|
Use Scenario: Active clamp flyback or LLC resonant converter primary switch in 6.6 kW OBC systems for PHEVs/EVs. IC Role / Device Role / Timing Role: High-side switching device subjected to 40 V bus transients and 100+ kHz switching; requires low Coss (1640 pF @ 25 V) for soft-switching. Use Value: 2261 pF Coss(eff) over 0–32 V enables predictable ZVS timing margin, reducing switching losses by 35% vs. comparable TO-263 devices. |
Use Scenario: Phase-leg half-bridge in 800 V-class traction inverter using 40 V-rated MOSFETs in stacked configuration for auxiliary DC-DC or pre-charge circuits. IC Role / Device Role / Timing Role: Pre-charge switch controlling battery connection during system startup; must withstand 736 A pulsed current and absorb 538 mJ avalanche energy. Use Value: 736 A IDM and 538 mJ EAS(tested) ensure single-event survivability during capacitor bank charging without external snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive Power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IAUZ40N04S5L030ATMA1 | 40 V, 3.0 mΩ RDS(on), 130 A ID, TSDSON8 package (3.3 × 3.3 mm), lower Qg (65 nC) | Better suited for space-constrained, lower-current (<100 A) DC-DC controllers where gate drive power is critical | Select when board area is constrained and peak current ≤130 A; avoid for high-current motor phases due to higher RDS(on). |
| STL220N4F7AG | 40 V, 0.75 mΩ RDS(on), 220 A ID, PowerFLAT 5×6 HV package, higher Qg (160 nC) | Higher current capacity but larger footprint and no dual-sided cooling; requires dedicated heatsink | Choose for maximum current density where PCB thermal design permits single-sided cooling and layout space allows 5×6 mm footprint. |
Compared with IAUZ40N04S5L030ATMA1, AUIRF7738L2TR offers 2.5× lower RDS(on) and 1.9× higher current rating, justifying its use in high-power motor drives; versus STL220N4F7AG, it trades 0.45 mΩ lower RDS(on) for superior thermal extraction via DirectFET® L6, reducing system-level heatsink mass by ~40%.
Availability
AUIRF7738L2TR is available at Aetrix Electronics and suitable for electric power steering, 48 V–12 V DC-DC conversion, and onboard charger auxiliary power stages requiring stable component supply across automotive production lifecycles.
Supply support for AUIRF7738L2TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.
AUIRF7738L2TR belongs to Infineon's Automotive HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in electrified vehicle subsystems including traction auxiliaries, thermal management, and energy recovery circuits.
FAQ
What is the recommended PCB layout for AUIRF7738L2TR to achieve dual-sided cooling?
Use full copper pour on both top and bottom layers aligned to the DirectFET® L6 outline, with ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) connecting bottom copper to internal ground planes. Follow AN-1035 for stencil aperture design (0.15 mm thickness, 1:1.2 aspect ratio) and reflow profile targeting 245°C peak for lead-free solder.
Does AUIRF7738L2TR require external gate resistors for motor drive applications?
Yes - a 2.2 Ω to 4.7 Ω non-inductive gate resistor is recommended to dampen ringing caused by low Crss (737 pF) and high di/dt (>5 kA/µs). This prevents false turn-on during commutation and ensures reliable operation at 20 kHz PWM in EPS inverters per Figure 11 gate charge curves.
How does the 175°C TJ rating impact system-level thermal design?
The 175°C rating allows sustained operation at case temperatures up to 150°C without derating, enabling placement near heat sources (e.g., IGBT modules) in integrated power units. Combined with RθJ-PCB = 0.5 °C/W, it permits >90% of heat to exit via PCB, eliminating need for bolt-down heatsinks in many 3–5 kW applications.
Is AUIRF7738L2TR qualified for AEC-Q101 Grade 0 or Grade 1?
AUIRF7738L2TR is qualified to AEC-Q101 Grade 1 (−40°C to +125°C ambient), with extended characterization up to +175°C junction temperature. Its qualification includes HTGB, HTRB, UHAST, and repetitive avalanche testing per Infineon's automotive release documentation, supporting use in engine bay and transmission-mounted modules.
AUIRF7738L2TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric L6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Ta), 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.6mOhm @ 109A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 194 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7471 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.3W (Ta), 94W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET L6
AUIRF7738L2TR FAQ
1.How can I place an order for AUIRF7738L2TR through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRF7738L2TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRF7738L2TR reliable?
The price and inventory of AUIRF7738L2TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7738L2TR is usually 5 days.
3.What payment methods are accepted for AUIRF7738L2TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7738L2TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRF7738L2TR?
AUIRF7738L2TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRF7738L2TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRF7738L2TR?
For technical support, including AUIRF7738L2TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7738L2TR requirements.
6.How does Aetrix verify that AUIRF7738L2TR is sourced from the original manufacturer or authorized distributors?
All AUIRF7738L2TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7738L2TR meets industry standards.
7.What is the process for return or replacement of AUIRF7738L2TR?
All AUIRF7738L2TR units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7738L2TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRF7738L2TR part is unused and in its original packaging.
Return procedure for AUIRF7738L2TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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