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Infineon Technologies AUIRF7739L2
- Part No.:
- AUIRF7739L2
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric L8
- Datasheet:
-
AUIRF7739L2.pdf
- Description:
- MOSFET N-CH 40V 46A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:6,099
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Product details
Overview
AUIRF7739L2TR from Infineon is an automotive-grade N-channel Power MOSFET in DirectFET® L8 package, rated for 40 V V(BR)DSS, 700 µΩ RDS(on) typ. at 10 V VGS, and 270 A continuous drain current (silicon-limited, TC = 25°C). It delivers ultra-low on-resistance and high power density for heavy-load motor drive and DC-DC conversion in ICE, HEV, and EV platforms.
For engineers reviewing the AUIRF7739L2TR datasheet, AUIRF7739L2TR pinout, AUIRF7739L2TR application, or AUIRF7739L2TR equivalent, key selection criteria include its 175°C junction temperature rating, dual-sided cooling capability, 220 nC total gate charge, and compatibility with DPak-layout PCBs per AN-1035.
Technical Context
This MOSFET employs Infineon's latest Automotive HEXFET® silicon with optimized cell pitch and trench geometry to achieve 700 µΩ RDS(on) and 220 nC Qg - enabling high-frequency switching with low conduction and switching losses. Its DirectFET® L8 package integrates top-side drain and bottom-side source terminals for symmetrical thermal path design.
The device supports unclamped inductive switching with 270 mJ single-pulse avalanche energy (thermally limited) and 160 mJ tested value, plus repetitive avalanche capability up to 300 mJ at 1% duty cycle. Junction-to-can thermal resistance is 1.2 °C/W, enabling efficient heat extraction via both PCB and heatsink interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 40 V - Maximum blocking voltage before avalanche onset; enables use in 12–24 V automotive bus systems with margin. |
| RDS(on) typ. | 700 µΩ @ VGS = 10 V, ID = 160 A - Enables <1.6 W conduction loss at 160 A, critical for high-current motor phases. |
| ID (Silicon Limited) | 270 A @ TC = 25°C - Silicon current limit defines maximum safe steady-state operation under ideal cooling. |
| Qg (typical) | 220 nC - Determines gate driver power requirement and switching speed; supports ~100 kHz hard-switched DC-DC designs. |
| TJ Operating Range | −55°C to +175°C - Qualified for under-hood environments including transmission control units and traction inverters. |
| EAS (tested) | 160 mJ - Verified unclamped inductive energy handling; supports robustness in motor phase-leg fault conditions. |
| RθJ-Can | 1.2 °C/W - Low junction-to-can thermal resistance enables direct heatsink mounting for dual-sided cooling architecture. |
Pinout & Package
Package: DirectFET® L8 (Large Can), surface-mount, footprint compatible with TO-252AA (DPak), 0.7 mm profile, metal-can top-side drain and bottom-side source terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Top Metal Can) | Drain | Primary high-current power terminal; thermally coupled to heatsink for dual-sided cooling. |
| S (Bottom Pads) | Source | Low-inductance source connection to PCB ground plane; enables Kelvin sensing in high-precision current monitoring. |
| G (Peripheral Pad) | Gate | Control input with 1.5 Ω internal gate resistance; designed for low-noise gate drive routing adjacent to source. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-sided cooling | Top-side drain and bottom-side source allow simultaneous thermal interface to heatsink and PCB copper, reducing RθJA by >50% vs. standard SO-8. |
| 175°C junction rating | Enables operation in high-ambient zones (e.g., near engine blocks or inverters) without derating below 150°C ambient. |
| Repetitive avalanche capability | Rated for 300 mJ at 1% duty cycle - supports reliable operation during transient overvoltage events in motor commutation. |
| Low parasitic inductance | DirectFET® layout minimizes source inductance (<0.5 nH), reducing voltage spikes and improving EMI performance in high-dI/dt switching. |
| Automotive qualification | AEC-Q101 qualified; compliant with ISO/TS 16949 manufacturing controls and PPAP documentation requirements. |
Applications
| Electric Power Steering (EPS) | 48 V Mild Hybrid DC-DC Converter |
|---|---|
|
Use Scenario: High-current H-bridge driving 3-phase EPS motor with peak currents >200 A and frequent direction reversal. IC Role / Device Role / Timing Role: Low-side and high-side switching element in synchronous rectification stage; operates at 20–50 kHz PWM frequency. Use Value: 700 µΩ RDS(on) reduces conduction loss by >35% vs. legacy D2PAK MOSFETs, lowering thermal stress on motor controller PCB. |
Use Scenario: Primary-side switch in bi-directional buck-boost converter linking 12 V starter battery and 48 V Li-ion auxiliary bus. IC Role / Device Role / Timing Role: Main power switch handling bidirectional 150 A peak current; requires fast turn-on/off and low Qgd for ZVS operation. Use Value: 81 nC Qgd and 1240 pF Crss enable clean Miller plateau transition, supporting >100 kHz soft-switching with minimal dead-time penalty. |
| Traction Inverter Auxiliary Stage | Engine Start-Stop System (SI) |
|
Use Scenario: High-efficiency auxiliary power supply for gate drivers and sensors within main traction inverter housing. IC Role / Device Role / Timing Role: Synchronous rectifier in isolated flyback or active clamp forward topology; switches at 300–500 kHz. Use Value: 11.88 nF Ciss and 2510 pF Coss ensure stable loop response and low capacitive coupling noise into sensitive analog sensor circuits. |
Use Scenario: High-current solenoid driver for belt-driven starter-generator engagement in 12 V stop-start systems. IC Role / Device Role / Timing Role: Single-pole power switch controlling 250 A inrush current during cranking; must survive repeated avalanche events. Use Value: 160 mJ tested EAS and 1070 A pulsed drain rating ensure reliable engagement over 100,000+ start cycles without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current automotive power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 220 A, 0.75 mΩ RDS(on), TSDFN8 package; higher RθJA (15 °C/W), no dual-sided cooling. | Limited to single-sided PCB cooling; unsuitable for space-constrained modules requiring top-side heatsinking. | Select when board-level thermal management uses only bottom-side copper and cost sensitivity outweighs thermal density needs. |
| IXTH120N40L2 | 40 V, 120 A, 1.2 mΩ RDS(on), TO-247 package; 3× larger footprint, 3.5× higher Qg (780 nC). | Requires larger gate driver and heatsink; not suitable for high-frequency (>80 kHz) or compact module designs. | Select only for legacy TO-247 socket compatibility or where extreme ruggedness (1000 V EAS) outweighs efficiency goals. |
Compared with STL220N4F7AG and IXTH120N40L2, the AUIRF7739L2TR provides superior power density (270 A in DPak footprint), lowest RDS(on)/Qg ratio (3.18 µΩ/nC), and unique dual-sided thermal path - making it optimal for next-gen automotive power modules demanding size, weight, and thermal efficiency.
Availability
AUIRF7739L2TR is available at Aetrix Electronics and suitable for electric power steering, 48 V mild hybrid DC-DC converters, and engine start-stop systems requiring stable component supply across automotive production lifecycles.
Supply support for AUIRF7739L2TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and wafer fabrication facilities.
The AUIRF7739L2TR belongs to Infineon's Automotive HEXFET® Power MOSFET product line, engineered specifically for high-current, high-reliability switching in electrified vehicle powertrain subsystems.
FAQ
What is the maximum continuous drain current for AUIRF7739L2TR at 100°C case temperature?
The AUIRF7739L2TR supports 190 A continuous drain current at TC = 100°C and VGS = 10 V, per the silicon-limited rating in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced carrier mobility and increased RDS(on) at elevated temperatures.
Does AUIRF7739L2TR require special soldering processes?
Yes - the DirectFET® L8 package requires adherence to Infineon Application Note AN-1035, which specifies stencil design, reflow profile (peak 270°C), and vapor-phase or convection soldering techniques to avoid voiding and ensure mechanical reliability of the metal-can bond.
Can AUIRF7739L2TR be used in synchronous rectification topologies?
Yes - its low RDS(on) (700 µΩ), fast body diode recovery (trr = 87 ns), and low Qrr (250 nC) make it suitable for high-efficiency synchronous rectification in isolated DC-DC converters operating up to 500 kHz, provided gate drive timing accounts for VGS(th) variation over temperature.
Is the AUIRF7739L2TR RoHS and halogen-free compliant?
Yes - the device is lead-free, RoHS-compliant (2011/65/EU), and halogen-free per IEC 61249-2-21, with all homogeneous materials verified to contain <900 ppm bromine and <900 ppm chlorine, as confirmed in Infineon's material declaration report #MD-IRF7739L2-2023.
AUIRF7739L2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric L8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 46A (Ta), 270A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1mOhm @ 160A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 330 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 11880 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DirectFET™ Isometric L8
AUIRF7739L2 FAQ
1.How can I place an order for AUIRF7739L2 through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRF7739L2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRF7739L2 reliable?
The price and inventory of AUIRF7739L2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7739L2 is usually 5 days.
3.What payment methods are accepted for AUIRF7739L2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7739L2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRF7739L2?
AUIRF7739L2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRF7739L2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRF7739L2?
For technical support, including AUIRF7739L2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7739L2 requirements.
6.How does Aetrix verify that AUIRF7739L2 is sourced from the original manufacturer or authorized distributors?
All AUIRF7739L2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7739L2 meets industry standards.
7.What is the process for return or replacement of AUIRF7739L2?
All AUIRF7739L2 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7739L2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRF7739L2 part is unused and in its original packaging.
Return procedure for AUIRF7739L2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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