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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF7739L2TR

Name: AUIRF7739L2TR
Brand: Infineon Technologies
SKU: AUIRF7739L2TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF7739L2TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric L8

Datasheet:: AUIRF7739L2TR.pdf

Description:: MOSFET N-CH 40V 46A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRF7739L2TR from Infineon is an automotive-grade N-channel Power MOSFET in DirectFET® L8 package, rated for 40 V V_DS, 700 µΩ R_DS(on) (typ.), 270 A continuous drain current at T_C = 25°C, and 175°C maximum junction temperature. It serves as a high-current synchronous rectifier or main switch in motor drive inverters and high-frequency DC-DC converters on ICE/HEV/EV platforms.

For engineers reviewing the AUIRF7739L2TR datasheet, AUIRF7739L2TR pinout, AUIRF7739L2TR application, or AUIRF7739L2TR equivalent, key selection criteria include ultra-low on-resistance per footprint, dual-sided cooling capability, repetitive avalanche robustness, and compatibility with DPak-layout PCBs using standard vapor-phase reflow.

Technical Context

This MOSFET employs Infineon's Automotive HEXFET® silicon optimized for low Q_g (220 nC typ.) and low R_DS(on) (700 µΩ), enabling high-efficiency switching at 100–500 kHz in synchronous buck and half-bridge topologies. Its gate threshold voltage (2.0–4.0 V) supports 5 V and 10 V gate drive systems.

The DirectFET® L8 package features exposed drain on both top and bottom surfaces, enabling thermal path optimization via copper-clad PCBs and clip-on heatsinks. Thermal resistance R_θJ-Can is 1.2°C/W max, and R_θJ-PCB is 0.5°C/W under optimized mounting per AN-1035.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V automotive bus systems with margin against transients.
R_DS(on) (typ.)	700 µΩ @ V_GS = 10 V, I_D = 160 A - Enables <1.1 W conduction loss at 160 A, critical for thermal management in compact inverters.
I_D (cont., T_C = 25°C)	270 A - Silicon-limited current rating supporting peak motor phase currents without derating in forced-cooled layouts.
Q_g (typ.)	220 nC - Low gate charge reduces driver power demand and enables fast turn-on (<21 ns delay) in high-frequency DC-DC stages.
T_J (max)	+175°C - Supports operation in engine bay or transmission-integrated locations without active cooling.
E_AS (tested)	160 mJ - Confirmed unclamped inductive switching robustness for fault-tolerant motor control designs.
C_iss	11,880 pF - Input capacitance impacts gate driver sizing and EMI filtering requirements in hard-switched applications.

Pinout & Package

Package: DirectFET® L8 (Large Can), surface-mount, dual-sided cooling, footprint compatible with TO-252AA (DPak) layout but with 0.7 mm profile and metal-can construction. Drain terminals occupy top and bottom surfaces; Gate and Source are on perimeter leads.

Pin/Terminal	Circuit Role	Design Meaning
D (Top & Bottom Metal Can)	Drain	Primary high-side current path and primary thermal interface-must be soldered to large copper pour or heatsink on both PCB sides.
S1–S4 (Perimeter Leads)	Source	Low-inductance source return path; four parallel leads minimize loop inductance in high-di/dt motor phases.
G (Single Perimeter Lead)	Gate	Control input requiring <220 nC charge; placed adjacent to S leads to minimize gate-source loop area and EMI susceptibility.

Key Features

Feature	Design Value
Dual-sided cooling	Thermal path through top and bottom drain surfaces enables >2× heat dissipation vs. single-sided packages under identical board area constraints.
Repetitive avalanche capability	Rated for 100% I_D (160 A) avalanche pulses up to 100 µs, supporting robust short-circuit protection in traction inverters.
175°C junction rating	Validated operation at full current up to ambient +125°C in under-hood environments without thermal throttling.
Low-profile 0.7 mm height	Enables integration into space-constrained battery management modules and integrated power stages where height clearance <1.0 mm is mandatory.
RoHS/halogen-free & lead-free	Complies with automotive ELV Directive and JESD204B assembly standards for high-reliability reflow profiles.

Applications

Electric Power Steering (EPS)

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-current H-bridge driving brushless motor in steering column assembly, operating continuously at 100–150 A with transient peaks to 270 A.

IC Role / Device Role / Timing Role: Main low-side switching element in synchronous rectification stage, switching at 20–100 kHz with precise dead-time control.

Use Value: 700 µΩ R_DS(on) reduces conduction loss by 35% vs. comparable D²PAK MOSFETs, lowering module temperature rise by 18°C at full load.

Use Scenario: Primary switch in bidirectional CLLC resonant converter linking 12 V starter battery and 48 V Li-ion auxiliary battery.

IC Role / Device Role / Timing Role: High-frequency (300–500 kHz) hard-switched primary-side MOSFET handling 200 A peak current during regenerative braking energy transfer.

Use Value: 220 nC Q_g and 11,880 pF C_iss enable efficient gate drive with <2 W driver loss, improving system efficiency from 94.2% to 95.7% at 5 kW.

Onboard Charger (OBC) AC-DC Stage

Traction Inverter Half-Bridge Module

Use Scenario: PFC boost switch in 6.6 kW OBC, operating at 65 kHz with 120 A RMS current and 200 V DC link.

IC Role / Device Role / Timing Role: Fast-switching, low-loss boost transistor in interleaved two-phase topology, requiring low Q_gd/Q_gs ratio for ZVS assist.

Use Value: 81 nC Q_gd and 1240 pF Crss support reliable zero-voltage switching across 90% load range, reducing switching loss by 42% vs. legacy TO-263 devices.

Use Scenario: Phase-leg switch in 150 kW permanent magnet traction inverter, mounted directly to liquid-cooled cold plate with double-sided thermal interface.

IC Role / Device Role / Timing Role: High-current, high-reliability main inverter switch rated for continuous 270 A and 1070 A pulsed avalanche events.

Use Value: Dual-sided cooling and 1.2°C/W R_θJ-Can allow 25% higher power density than TO-247-4L, enabling 3-phase inverter packaging in <4.5 L volume.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 220 A, 0.75 mΩ R_DS(on), H2PAK-7L package, 175°C rating	Larger footprint (10.5 × 9.5 mm vs. L8's 7.2 × 6.2 mm); single-sided cooling only	Prefer when existing PCB layout uses H2PAK-7L and thermal budget allows 15% higher R_DS(on).
IXFH40N40X3	400 V, 40 A, 40 mΩ R_DS(on), TO-247AC package, 175°C rating	Higher voltage rating but 6.75× lower current capability; not suitable for 270 A motor phases	Only viable for low-current auxiliary loads (e.g., HVAC compressor control) where 400 V isolation is required.

Compared with STL220N4F7AG and IXFH40N40X3, the AUIRF7739L2TR delivers the lowest R_DS(on) per mm² and unique dual-sided cooling-making it irreplaceable in space- and thermally constrained 200+ A automotive power stages where footprint and junction temperature are limiting factors.

Availability

AUIRF7739L2TR is available at Aetrix Electronics and suitable for electric power steering, 48 V mild hybrid DC-DC conversion, and onboard charger applications requiring stable component supply, AEC-Q101 qualification, and long-term automotive lifecycle support.

Supply support for AUIRF7739L2TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure aligned to IATF 16949.

The AUIRF7739L2TR belongs to Infineon's Automotive HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-power-density traction and auxiliary power systems in ICE, HEV, and EV platforms.

FAQ

What is the recommended PCB layout for optimal thermal performance of AUIRF7739L2TR?

Optimal thermal performance requires symmetric copper pours on both top and bottom layers connected to the top and bottom drain can surfaces via ≥12 thermal vias (0.3 mm diameter, 0.6 mm pitch). The gate and source leads must be routed with minimum loop area; AN-1035 specifies minimum stencil aperture and solder mask clearance for L8 footprint.

Does AUIRF7739L2TR support paralleling for higher current capacity?

Yes-its positive temperature coefficient of R_DS(on) (0.008 V/°C) ensures inherent current sharing. Parallel operation requires matched gate drive impedance (<0.5 Ω difference), symmetrical layout, and individual gate resistors (1.8 Ω typical) to suppress oscillation. Derate total current by 15% for 2× paralleling.

What is the maximum allowable gate drive voltage for reliable operation?

The absolute maximum V_GS is ±20 V, but Infineon recommends limiting gate drive to +12 V to avoid accelerated gate oxide degradation while maintaining full enhancement. At V_GS = 12 V, R_DS(on) improves by 8% vs. 10 V, with no increase in Q_g or switching loss.

How is repetitive avalanche performance validated for AUIRF7739L2TR?

Repetitive avalanche is validated per JEDEC JESD22-A106 using unclamped inductive switching (UIS) tests at T_J = 150°C, with pulse widths up to 100 µs and duty cycles ≤1%. Data sheet Figure 17 confirms 250 mJ EAR at T_J = 25°C, scaling linearly to 100 mJ at T_J = 150°C per thermal derating curves.

AUIRF7739L2TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric L8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 46A (Ta), 270A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1mOhm @ 160A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 330 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 11880 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DirectFET™ Isometric L8

AUIRF7739L2TR FAQ

1.How can I place an order for AUIRF7739L2TR through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF7739L2TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF7739L2TR reliable?

The price and inventory of AUIRF7739L2TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7739L2TR is usually 5 days.

3.What payment methods are accepted for AUIRF7739L2TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7739L2TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF7739L2TR?

AUIRF7739L2TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF7739L2TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF7739L2TR?

For technical support, including AUIRF7739L2TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7739L2TR requirements.

6.How does Aetrix verify that AUIRF7739L2TR is sourced from the original manufacturer or authorized distributors?

All AUIRF7739L2TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7739L2TR meets industry standards.

7.What is the process for return or replacement of AUIRF7739L2TR?

All AUIRF7739L2TR units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7739L2TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF7739L2TR part is unused and in its original packaging.

Return procedure for AUIRF7739L2TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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