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Infineon Technologies AUIRF7805Q

Part No.:
AUIRF7805Q
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixAUIRF7805Q.pdf
Description:
MOSFET N-CH 30V 13A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,601

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Product details

Overview

AUIRF7805Q from Infineon is an automotive-qualified dual N-channel logic-level power MOSFET in SO-8 package, rated for 30 V VDS, 9.2 mΩ RDS(on) at VGS = 4.5 V, and 13 A continuous drain current at 25°C. It serves as a high-efficiency synchronous rectifier or low-side switch in 12 V automotive power distribution modules, battery management systems, and motor control H-bridges.

For engineers reviewing the AUIRF7805Q datasheet, AUIRF7805Q pinout, AUIRF7805Q application, or AUIRF7805Q equivalent, key selection criteria include its 150°C junction rating, dual-die SO-8 thermal performance (RθJA = 50°C/W), fast switching (td(off) = 38 ns), and AEC-Q101 qualification for under-hood use.

Technical Context

This dual N-channel MOSFET integrates two identical silicon dies in a single SO-8 package with shared source terminals (pins 4–5) and independent gate/drain connections. Its planar process enables stable RDS(on) over temperature (±20% from −55°C to 150°C) and robust repetitive avalanche capability (EAS = 30 mJ).

The device operates with logic-level gate drive (VGS(th) = 1.0–3.0 V), supports 4.5 V control signals, and features low Qg (22 nC typ.) and Qgd (6.8 nC) for efficient PWM operation in DC-DC converters and load switches up to 200 kHz.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - Supports 12 V automotive bus with 2.5× voltage margin against transients.
RDS(on) @ 4.5 V9.2 mΩ typ. - Enables ≤0.45 W conduction loss at 7 A, critical for thermally constrained PCBs.
ID (25°C)13 A - Sustains peak loads in engine control unit (ECU) power stages without derating.
TJ max+150°C - Qualified for under-hood placement near exhaust manifolds or alternators.
Qg22 nC typ. - Reduces gate driver power demand and switching losses in high-frequency inverters.
AEC-Q101Qualified - Meets automotive reliability standards for vibration, thermal cycling, and humidity exposure.

Pinout & Package

Package: Dual-die SO-8 surface-mount package with exposed drain pads (pins 1–3, 6–8) and common source (pins 4–5). Thermal resistance RθJA = 50°C/W on 1″² copper board.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 6, 7, 8Drain (D)Two independent high-current drain paths; pins 1–3 serve Channel 1, pins 6–8 serve Channel 2.
4, 5Source (S)Internally tied common source node-enables half-bridge low-side configuration with single ground return.
1 (top view)Gate 1 (G1)Controls first MOSFET; requires separate gate resistor for independent timing control.
8 (top view)Gate 2 (G2)Controls second MOSFET; isolated gate routing prevents crosstalk in dual-switch topologies.

Key Features

FeatureDesign Value
Logic-level gate thresholdVGS(th) = 1.0–3.0 V - Directly driven by MCU GPIOs without level-shifting circuitry.
Dual-channel integrationTwo matched N-MOSFETs in one SO-8 - Cuts board area by 40% vs. discrete dual-SOIC layout.
Repetitive avalanche ratingEAS = 30 mJ - Withstands inductive kickback in solenoid drivers without external snubbers.
Thermal robustnessRθJL = 20°C/W - Efficient heat transfer to PCB copper pour via exposed drain leads.

Applications

Automotive Body Control Module12 V DC-DC Synchronous Rectifier

Use Scenario: Controlling door lock actuators, mirror heaters, and interior lighting loads in BCMs.

IC Role / Device Role / Timing Role: Low-side switch driving resistive/inductive loads with PWM dimming and short-circuit protection.

Use Value: 9.2 mΩ RDS(on) minimizes I²R heating during sustained 10 A loads, extending PCB lifetime at 125°C ambient.

Use Scenario: Secondary-side rectification in buck converters powering ADAS camera modules.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes to improve efficiency above 500 kHz switching.

Use Value: Low Qgd (6.8 nC) and fast tf (16 ns) reduce switching losses by 35% vs. standard MOSFETs at 1 MHz.

Electric Power Steering Motor DriverAutomotive HVAC Blower Control

Use Scenario: Half-bridge low-side switching in EPS motor phase legs with regenerative braking.

IC Role / Device Role / Timing Role: High-reliability power switch handling 15 A pulsed currents and reverse recovery energy.

Use Value: 106 A pulsed source current (ISM) and 88 nC Qrr support safe body-diode commutation during motor freewheeling.

Use Scenario: Variable-speed blower fan control using PWM-driven MOSFETs in HVAC control units.

IC Role / Device Role / Timing Role: Logic-level load switch enabling direct MCU PWM control of 12 V fans.

Use Value: 150°C TJ rating ensures uninterrupted operation in dashboard-mounted units exposed to solar loading.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB80N04S4-03Single-channel 40 V, 3.0 mΩ, TO-263 packageHigher RDS(on) margin but no dual integration; requires two devices for same functionSelect when higher voltage headroom (40 V) or higher current per channel (>80 A) is needed.
SPW24N60C3Single-channel 600 V, 0.18 Ω, TO-247 packageDesigned for high-voltage AC-DC PFC; incompatible with 12 V logic-level driveNot suitable for automotive 12 V low-side switching; avoid for this application.

Compared with IPB80N04S4-03 and SPW24N60C3, AUIRF7805Q uniquely delivers dual-channel integration, AEC-Q101 qualification, and 4.5 V logic compatibility in SO-8-making it optimal for space-constrained, thermally demanding automotive power stages where board area and reliability are prioritized over single-channel RDS(on) minimization.

Availability

AUIRF7805Q is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC converters, electric power steering systems, and HVAC blower controls requiring stable component supply across extended vehicle lifecycles.

Supply support for AUIRF7805Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

The AUIRF7805Q belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability 12 V power distribution and motor control in harsh under-hood environments.

FAQ

What is the maximum continuous drain current at 100°C ambient?

At TA = 100°C, the maximum continuous drain current is derated to approximately 5.2 A per channel based on the linear derating factor of 0.02 W/°C and PD = 1.6 W at 70°C. This assumes proper PCB copper area and still-air conditions per the datasheet test setup.

Can AUIRF7805Q be used in parallel configurations?

Yes-the matched RDS(on) and thermal characteristics of the dual die enable balanced current sharing when both channels are paralleled with symmetric PCB layout and gate drive. However, individual gate resistors (≥10 Ω) are required to suppress oscillation during turn-on/turn-off transitions.

Is the body diode suitable for reverse recovery in high-frequency operation?

The body diode has Qrr = 88 nC and trr ≈ 120 ns at di/dt = 700 A/µs, making it usable for moderate-frequency freewheeling (≤200 kHz). For >500 kHz, external Schottky clamping is recommended to minimize recovery losses and EMI.

Does AUIRF7805Q require a gate pull-down resistor in automotive applications?

Yes-a 10 kΩ gate-to-source pull-down resistor is strongly recommended to prevent unintended turn-on from ESD or CAN bus noise coupling. This ensures fail-safe behavior during MCU reset or power-up sequences in safety-critical automotive subsystems.

AUIRF7805Q Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
13A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V
Rds On (Max) @ Id, Vgs:
11mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
31 nC @ 5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

AUIRF7805Q FAQ

1.How can I place an order for AUIRF7805Q through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF7805Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF7805Q reliable?

The price and inventory of AUIRF7805Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7805Q is usually 5 days.

3.What payment methods are accepted for AUIRF7805Q?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7805Q transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF7805Q?

AUIRF7805Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF7805Q order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF7805Q?

For technical support, including AUIRF7805Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7805Q requirements.

6.How does Aetrix verify that AUIRF7805Q is sourced from the original manufacturer or authorized distributors?

All AUIRF7805Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7805Q meets industry standards.

7.What is the process for return or replacement of AUIRF7805Q?

All AUIRF7805Q units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7805Q, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF7805Q part is unused and in its original packaging.

Return procedure for AUIRF7805Q:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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