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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF7805QTR

Name: AUIRF7805QTR
Brand: Infineon Technologies
SKU: AUIRF7805QTR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF7805QTR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: AUIRF7805QTR.pdf

Description:: MOSFET N CH 30V 13A 8-SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRF7805QTR from Infineon Technologies is an automotive-qualified dual N-channel logic-level power MOSFET in SO-8 package, featuring 30 V V_DS, 9.2 mΩ R_DS(on) @ 4.5 V_GS, and 13 A continuous drain current at 25°C. It operates up to 150°C junction temperature and delivers fast switching (t_d(on) = 16 ns, t_f = 16 ns) with enhanced repetitive avalanche rating for robustness in high-stress automotive power stages.

For engineers reviewing the AUIRF7805QTR datasheet, AUIRF7805QTR pinout, AUIRF7805QTR application, or AUIRF7805QTR equivalent, key selection criteria include its dual-die SO-8 layout, low R_DS(on) at 4.5 V gate drive, 100 A pulsed drain capability, body diode Q_rr of 55–88 nC, and AEC-Q101 qualification for under-hood motor control and DC-DC converter designs.

Technical Context

This dual N-channel MOSFET integrates two identical HEXFET die in a single SO-8 surface-mount package, sharing common source terminals (pins 4, 5, 6, 7, 8) and independent gate/drain connections. Its planar process enables stable R_DS(on) across temperature (±30% drift from −55°C to 150°C) and low gate charge (Q_g = 22 nC typ.) for efficient 12 V automotive system switching.

The device supports logic-level drive (V_GS(th) = 1.0–3.0 V), exhibits low output charge (Q_oss = 3.0–3.6 nC), and features a body diode with V_SD = 1.2 V @ 7 A and controlled reverse recovery (Q_rr = 55 nC with external 10BQ040 snubber). Thermal resistance R_θJA = 50°C/W on 1"² copper board enables compact thermal design.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V automotive battery systems with load dump margin
R_DS(on) @ 4.5 V_GS	9.2 mΩ typ. - Enables <1 W conduction loss at 10 A, critical for thermally constrained ECUs
I_D (25°C)	13 A continuous - Supports high-current motor drivers and solenoid controls without forced cooling
Q_g	22 nC typ. - Reduces gate driver power demand and enables >100 kHz PWM in buck converters
T_J max	+150°C - Qualified for under-hood placement in engine control modules and transmission controllers
AEC-Q101	Qualified - Meets automotive reliability standards including HTOL, TC, UHAST, and ESD (HBM 1 kV)
Package	SO-8 dual-die - Saves PCB area vs. two discrete SO-8 devices; shared source reduces trace inductance

Pinout & Package

SO-8 surface-mount package with dual N-channel MOSFETs sharing source terminals. Dimensions per JEDEC MS-012AA: 5.0 × 6.2 mm footprint, 1.75 mm height, lead pitch 1.27 mm.

Pin/Terminal	Circuit Role	Design Meaning
1 (G1)	Gate of Channel 1	Independent control input for first MOSFET; requires <22 nC charge for full turn-on
2 (D1)	Drain of Channel 1	High-side or low-side switch node; rated for 30 V and 100 A pulsed current
3 (S1/S2)	Common Source	Shared source connection for both channels; pins 4,5,6,7,8 are electrically tied
4–8 (S1/S2)	Common Source (multi-pin)	Low-inductance parallel source path; improves current sharing and thermal spreading
5 (D2)	Drain of Channel 2	Second independent switch node; enables half-bridge or dual-load configurations
6 (G2)	Gate of Channel 2	Independent gate terminal; isolated from G1 to support asynchronous or complementary drive

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.0–3.0 V enables direct interface with 3.3 V/5 V microcontrollers without level-shifting
Dual-die SO-8 integration	Reduces PCB area by ~40% vs. two discrete SO-8 MOSFETs while maintaining thermal performance
Enhanced avalanche rating	Rated for repetitive unclamped inductive switching-critical for relay/snubberless solenoid drivers
150°C operation	Supports placement near heat sources (e.g., power inductors) in engine bay modules
AEC-Q101 qualification	Validated for automotive life cycles including 1000+ thermal cycles and 1000 h HTOL at 175°C

Applications

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: Driving 12 V fuel injectors with peak currents up to 10 A and 1 ms pulse widths in closed-loop injection timing.

IC Role / Device Role / Timing Role: Low-side switch providing precise on/off control with <16 ns turn-on delay and minimal R_DS(on) conduction loss.

Use Value: Enables accurate fuel metering via fast, low-loss switching; dual-die layout allows redundant injector channels on same footprint.

Use Scenario: Controlling brushed DC blower motors in climate control systems with PWM speeds from 10–100% duty cycle.

IC Role / Device Role / Timing Role: Half-bridge low-side switch handling 8–12 A continuous current and 100 A surge during stall conditions.

Use Value: 9.2 mΩ R_DS(on) minimizes heat generation at full speed; 150°C rating ensures reliability during prolonged cabin heating cycles.

12 V–48 V Automotive DC-DC Converter

Electronic Power Steering (EPS) Assist Motor Driver

Use Scenario: Synchronous rectification in 12 V input, 5 V/3.3 V output buck converters for ADAS camera and radar modules.

IC Role / Device Role / Timing Role: Secondary-side synchronous MOSFET with low Q_oss (3.0–3.6 nC) to reduce switching loss at 500 kHz–1 MHz.

Use Value: Q_g/Q_gd ratio supports zero-voltage switching; SO-8 thermal resistance enables >85% efficiency without heatsink.

Use Scenario: H-bridge driver for 24 V assist motors delivering up to 30 A peak current during steering torque amplification.

IC Role / Device Role / Timing Role: Dual-channel half-bridge leg with independent gate control for bidirectional motor commutation.

Use Value: Shared-source configuration lowers layout inductance; AEC-Q101 qualification ensures functional safety compliance per ISO 26262 ASIL-B.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	30 V, 220 A pulsed, R_DS(on) = 1.2 mΩ @ 10 V_GS; single-die PowerFLAT 5×6 package	Higher current capacity but requires 10 V gate drive; no dual-channel integration	Select when needing higher single-channel current and lower R_DS(on), but accept larger board area and separate gate routing
ON Semiconductor NTMFS5C675NL	30 V, 120 A pulsed, R_DS(on) = 1.6 mΩ @ 10 V_GS; SO-8 single-channel with exposed drain pad	Superior thermal performance (R_θJA = 35°C/W), but lacks dual-die functionality	Prefer for high-efficiency single-switch applications where thermal headroom is critical over channel count

Compared with STL220N3LLH6 and NTMFS5C675NL, AUIRF7805QTR uniquely provides dual-channel integration in SO-8 with logic-level drive and AEC-Q101 qualification-making it optimal for space-constrained, multi-load automotive subsystems requiring coordinated switching and 4.5 V compatibility.

Availability

AUIRF7805QTR is available at Aetrix Electronics and suitable for automotive engine control units, HVAC motor drives, and ADAS power supplies requiring stable component supply across extended production lifecycles.

Supply support for AUIRF7805QTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

AUIRF7805QTR belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability 12 V vehicle subsystems demanding low R_DS(on), fast switching, and robust thermal performance.

FAQ

What is the maximum continuous drain current for AUIRF7805QTR at 70°C ambient temperature?

The maximum continuous drain current is 10 A at T_A = 70°C with V_GS = 10 V, derating linearly at 0.02 W/°C above 25°C ambient. This reflects real-world thermal limits on standard 1"² copper PCBs and ensures safe operation in under-dash environments where ambient exceeds 60°C.

Does AUIRF7805QTR support 3.3 V microcontroller gate drive?

Yes-its logic-level gate threshold (V_GS(th) = 1.0–3.0 V) and guaranteed R_DS(on) of 11 mΩ max at V_GS = 4.5 V enable reliable turn-on from 3.3 V GPIOs. Full enhancement occurs at ≥4.5 V, making it compatible with modern automotive MCUs like Infineon's AURIX™ without external level shifters.

How is the dual-MOSFET configuration wired internally in the SO-8 package?

Pins 1 and 6 are independent gates (G1, G2); pins 2 and 5 are independent drains (D1, D2); pins 3, 4, 7, and 8 are internally bonded to a common source node. This allows independent channel control while minimizing source loop inductance-ideal for half-bridge or dual-load topologies.

Is AUIRF7805QTR qualified for use in safety-critical automotive systems?

Yes-it is fully AEC-Q101 qualified (including HTOL, TC, UHAST, and ESD testing) and rated for operation from −55°C to +150°C. While not ASIL-certified as a standalone component, its qualification supports integration into ASIL-B/C systems when used per manufacturer guidelines and validated in final application context.

AUIRF7805QTR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

AUIRF7805QTR FAQ

1.How can I place an order for AUIRF7805QTR through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF7805QTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF7805QTR reliable?

The price and inventory of AUIRF7805QTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7805QTR is usually 5 days.

3.What payment methods are accepted for AUIRF7805QTR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7805QTR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF7805QTR?

AUIRF7805QTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF7805QTR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF7805QTR?

For technical support, including AUIRF7805QTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7805QTR requirements.

6.How does Aetrix verify that AUIRF7805QTR is sourced from the original manufacturer or authorized distributors?

All AUIRF7805QTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7805QTR meets industry standards.

7.What is the process for return or replacement of AUIRF7805QTR?

All AUIRF7805QTR units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7805QTR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF7805QTR part is unused and in its original packaging.

Return procedure for AUIRF7805QTR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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