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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF8736M2TR

Name: AUIRF8736M2TR
Brand: Infineon Technologies
SKU: AUIRF8736M2TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF8736M2TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric M4

Datasheet:: AUIRF8736M2TR.pdf

Description:: MOSFET N-CH 40V 27A DIRECTFET

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Product details

Overview

AUIRF8736M2TR from Infineon Technologies (formerly International Rectifier) is an automotive-grade N-channel Power MOSFET in DirectFET® M2 package, rated for 40 V V_DS, 1.3 mΩ typ. R_DS(on) at 10 V V_GS, and 137 A continuous drain current at T_C = 25°C. It delivers high power density and dual-sided cooling for motor drive inverters in HEV/EV traction subsystems.

For engineers reviewing the AUIRF8736M2TR datasheet, AUIRF8736M2TR pinout, AUIRF8736M2TR application, or AUIRF8736M2TR equivalent, key selection criteria include its 175°C junction rating, 136 nC total gate charge, 45 nC Miller charge, repetitive avalanche capability, and compatibility with standard 5×6 mm PCB footprints used in automotive DC-DC and motor control modules.

Technical Context

This MOSFET integrates HEXFET® silicon with DirectFET® M2 packaging to achieve ultra-low R_DS(on) per unit area and minimized parasitic inductance. Its gate threshold voltage (2.2–3.9 V) and negative temperature coefficient of V_GS(th) (−9.3 mV/°C) support stable parallel operation in high-current systems.

The device supports unclamped inductive switching with 254 mJ tested single-pulse avalanche energy and allows repetitive avalanche up to T_jmax. Thermal resistance from junction-to-can is 2.4°C/W, enabling efficient dual-sided thermal management when mounted with clip heatsinks on automotive-grade PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/48 V automotive bus interfaces and low-voltage motor phases
R_DS(on) typ.	1.3 mΩ @ V_GS = 10 V, I_D = 85 A - Enables <1.1 W conduction loss at 90 A, critical for efficiency in traction inverters
I_D cont. @ T_C = 25°C	137 A - Supports peak phase currents in 3-phase BLDC drives without external paralleling
Q_g	136 nC - Determines gate driver power requirement; compatible with common 2–4 A automotive gate drivers
T_j max	175°C - Enables operation in under-hood environments with minimal derating in HEV power modules
E_AS (tested)	254 mJ - Validates robustness against inductive turn-off transients in motor phase legs without snubbers
C_iss	6867 pF - Low input capacitance reduces switching losses and EMI generation during 10–50 kHz PWM operation

Pinout & Package

Package: DirectFET® M2 - metal-can, 0.7 mm profile, 5.0 × 6.0 mm footprint, dual-sided cooling capable, compatible with SO-8 layout geometries and vapor-phase reflow per AN-1035.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; requires ≤20 V gate drive; internal R_G = 0.73 Ω limits ringing in high-dI/dt switching
D	Drain	High-side connection point; electrically tied to top metal can surface - enables direct heatsink mounting
S	Source	Low-side return; four discrete source pads on bottom side provide low-inductance PCB connection and dual thermal path

Key Features

Feature	Design Value
Automotive qualification	AEC-Q101 qualified per IRF's automotive standards - validated for 15-year life in engine bay thermal cycling
Dual-sided cooling	Drain-connected top can + source-connected bottom pads allow simultaneous thermal interface to heatsink and PCB copper
Repetitive avalanche rating	Rated for unlimited repetitive avalanche events as long as T_j ≤ 175°C - eliminates need for external clamping in inductive load switching
Low-profile packaging	0.7 mm height enables integration into space-constrained power modules and battery disconnect units
Body diode performance	V_SD = 1.3 V @ I_S = 85 A, t_rr = 46 ns - supports synchronous rectification and regenerative braking with low recovery loss

Applications

Electric Power Steering (EPS)

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-efficiency three-phase inverter driving brushless motor in column-assist EPS systems.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge configuration; switched at 20–40 kHz with precise dead-time control.

Use Value: 1.3 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy SO-8 MOSFETs, enabling silent, cooler EPS operation at ambient up to 125°C.

Use Scenario: Primary-side synchronous rectifier in bi-directional 48 V/12 V DC-DC converter for mild hybrid architectures.

IC Role / Device Role / Timing Role: High-current, low-V_DS switch handling up to 100 A bidirectional current flow with ZVS capability.

Use Value: 136 nC Q_g and 45 nC Q_gd enable fast, low-loss transitions; 175°C rating ensures reliability during transient overload conditions.

Traction Inverter Submodule (PHEV)

Battery Disconnect Unit (BDU)

Use Scenario: Phase-leg switch in compact 3-phase inverter module for plug-in hybrid electric vehicle auxiliary traction motors.

IC Role / Device Role / Timing Role: N-channel high-current switch operating in hard-switched mode with 100 A peak phase current.

Use Value: Dual-sided cooling and 2.4°C/W R_θJC maintain T_j < 150°C at full load, eliminating need for forced air in sealed inverter enclosures.

Use Scenario: Main contactor replacement in high-voltage battery service disconnect circuits requiring fast, low-loss switching.

IC Role / Device Role / Timing Role: Solid-state main power switch controlling 400 V battery pack isolation with fault current interruption capability.

Use Value: 254 mJ tested E_AS and repetitive avalanche tolerance allow safe interruption of short-circuit currents without external fusing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 0.95 mΩ R_DS(on), 220 A I_D, H2PAK-2 package (1.27 mm height)	Higher current rating but larger footprint and taller profile; no dual-sided cooling	Select when higher peak current headroom is required and board height >1.0 mm is acceptable
IXTQ136N40P	400 V, 12.5 mΩ, TO-247 package; not automotive-qualified	Designed for industrial 400 V systems; lacks AEC-Q101, 175°C rating, and low-profile form factor	Not suitable for automotive deployment; only consider for non-automotive 40 V prototyping where footprint is unconstrained

Compared with STL220N4F7AG and IXTQ136N40P, the AUIRF8736M2TR uniquely balances ultra-low R_DS(on), 0.7 mm profile, AEC-Q101 compliance, and dual thermal interface - making it the only option qualified for space- and thermally constrained HEV/EV power stages requiring <1.5 mm total height.

Availability

AUIRF8736M2TR is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V mild hybrid DC-DC converters, and battery disconnect units requiring stable component supply across automotive production lifecycles.

Supply support for AUIRF8736M2TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors for automotive and industrial markets.

The AUIRF8736M2TR belongs to Infineon's Automotive DirectFET® Power MOSFET product line, engineered specifically for high-power-density, thermally constrained applications in hybrid and electric vehicles - including traction inverters, DC-DC converters, and battery management systems.

FAQ

Is AUIRF8736M2TR pin-compatible with standard SO-8 MOSFETs?

No - it uses a DirectFET® M2 metal-can package with G, D, and S terminals distributed across top and bottom surfaces. While its 5.0 × 6.0 mm footprint matches SO-8 PCB land patterns, the terminal locations and thermal interface differ significantly. Layout must follow IR application note AN-1035 for stencil design and thermal pad routing.

What is the maximum allowable gate drive voltage for reliable operation?

The absolute maximum V_GS is ±20 V, but the device is characterized and qualified for continuous operation at V_GS = 10 V. Driving above 12 V provides marginal R_DS(on) improvement but increases gate oxide stress and ESD risk; automotive designs typically use 10–12 V gate drive with active Miller clamp protection.

Does AUIRF8736M2TR support synchronous rectification in DC-DC topologies?

Yes - its body diode has V_SD = 1.3 V at 85 A and t_rr = 46 ns, enabling efficient synchronous rectification in 48 V/12 V bidirectional converters. The low Q_gd/Q_g ratio (45/136 nC) also supports clean zero-voltage switching transitions when paired with appropriate gate timing control.

How is thermal performance verified in dual-sided cooling configurations?

Thermal validation follows JEDEC JESD51-14 for package-level characterization. With a clip heatsink on the top drain can and 2 oz. copper on the PCB bottom, R_θJA drops to 12.5°C/W (per datasheet footnote 8). Infineon provides thermal simulation models and AN-1035 assembly guidelines to ensure repeatable performance in production.

AUIRF8736M2TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric M4

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Ta), 137A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.9mOhm @ 85A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 204 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6867 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 63W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DirectFET™ Isometric M4

AUIRF8736M2TR FAQ

1.How can I place an order for AUIRF8736M2TR through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF8736M2TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF8736M2TR reliable?

The price and inventory of AUIRF8736M2TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF8736M2TR is usually 5 days.

3.What payment methods are accepted for AUIRF8736M2TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF8736M2TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF8736M2TR?

AUIRF8736M2TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF8736M2TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF8736M2TR?

For technical support, including AUIRF8736M2TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF8736M2TR requirements.

6.How does Aetrix verify that AUIRF8736M2TR is sourced from the original manufacturer or authorized distributors?

All AUIRF8736M2TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF8736M2TR meets industry standards.

7.What is the process for return or replacement of AUIRF8736M2TR?

All AUIRF8736M2TR units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF8736M2TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF8736M2TR part is unused and in its original packaging.

Return procedure for AUIRF8736M2TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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