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Infineon Technologies AUIRF9Z34N-INF
- Part No.:
- AUIRF9Z34N-INF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
AUIRF9Z34N-INF.pdf
- Description:
- AUTOMOTIVE HEXFET P CHANNEL
- Quantity:
- Payment:
- Shipping:
Inventory:1,317
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Product details
Overview
AUIRF9Z34N-INF from Infineon Technologies is a P-channel enhancement-mode MOSFET in TO-220AB package, rated for -55 V V(BR)DSS, 0.10 Ω RDS(on) at VGS = -10 V, and -19 A continuous drain current at TC = 25°C. It features fully avalanche-rated operation up to Tjmax, fast switching (tr = 55 ns, tf = 41 ns), and automotive qualification per AEC-Q101.
For engineers reviewing the AUIRF9Z34N-INF datasheet, AUIRF9Z34N-INF pinout, AUIRF9Z34N-INF application, or AUIRF9Z34N-INF equivalent, key selection criteria include negative gate threshold (-2.0 to -4.0 V), low gate charge (Qg = 35 nC), body diode forward voltage (-1.6 V), repetitive avalanche capability, and thermal resistance (RθJC = 2.2 °C/W).
Technical Context
This device operates as a high-side load switch or reverse polarity protection element in 12 V/24 V automotive power systems. Its planar HEXFET® structure delivers low on-resistance with robust avalanche energy handling (EAS = 180 mJ), and its -10 V gate drive compatibility enables direct interface with standard microcontroller I/O or dedicated gate drivers.
The integrated body diode supports freewheeling in inductive loads (e.g., solenoids, motors), with trr = 54–82 ns and Qrr = 110–160 nC under di/dt = 100 A/μs. Thermal design is enabled by low junction-to-case resistance (2.2 °C/W) and validated 175°C maximum junction temperature operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | -55 V - Withstands reverse-biased drain-source voltage up to this rating without breakdown. |
| RDS(on) max | 0.10 Ω @ VGS = -10 V - Enables <1.9 W conduction loss at -19 A, critical for thermal management in confined spaces. |
| ID cont | -19 A @ TC = 25°C - Supports high-current automotive loads such as HVAC actuators and lighting modules. |
| Qg | 35 nC - Determines gate driver power requirement and switching speed; enables <100 ns total transition time with 13 Ω RG. |
| EAS | 180 mJ - Specifies single-pulse avalanche energy limit; allows safe clamping of inductive kickback without external snubbers. |
| RθJC | 2.2 °C/W - Defines thermal path efficiency from die to case; enables accurate heatsink sizing using measured case temperature. |
| VGS(th) | -2.0 to -4.0 V - Ensures reliable turn-on with logic-level gate drive while avoiding spurious activation near ground. |
Pinout & Package
TO-220AB package with isolated tab (drain-connected), through-hole mounting, and 6.35 mm lead spacing. Standard mechanical outline per JEDEC TO-220AB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives negative voltage relative to source to turn on; threshold range -2.0 to -4.0 V ensures noise immunity. |
| D (Drain) | High-side power terminal | Connected to load supply rail; electrically tied to metal tab for thermal conduction and EMI shielding. |
| S (Source) | Reference node | Common return for gate drive and load current; defines VGS reference point for control loop stability. |
Key Features
| Feature | Design Value |
|---|---|
| Automotive qualification | AEC-Q101 qualified - Validated for 15-year life in under-hood environments including thermal cycling, humidity, and vibration. |
| Fully avalanche rated | Repetitive avalanche allowed up to Tjmax - Eliminates need for external clamping components in inductive switching applications. |
| Fast switching | tr = 55 ns, tf = 41 ns @ ID = -10 A - Reduces switching losses in PWM-controlled DC-DC converters and motor drivers. |
| Low RDS(on) | 0.10 Ω @ VGS = -10 V - Minimizes conduction loss in high-current battery disconnect and reverse polarity protection circuits. |
| Lead-free & RoHS | Compliant per EU Directive 2011/65/EU - Meets environmental compliance requirements for global automotive OEM programs. |
Applications
| Reverse Polarity Protection | Battery Disconnect Switch |
|---|---|
Use Scenario: Prevents damage to vehicle ECUs when battery terminals are accidentally reversed during jump-start or service. IC Role / Device Role / Timing Role: High-side P-channel MOSFET configured as ideal diode replacement with near-zero forward drop. Use Value: Achieves <0.1 V forward drop at 15 A versus >0.7 V for Schottky diodes, reducing heat generation and enabling compact PCB layout. | Use Scenario: Isolates auxiliary battery banks (e.g., camper van, hybrid start-stop) from main system during sleep mode. IC Role / Device Role / Timing Role: Load switch controlled by microcontroller GPIO to enable/disable power domains. Use Value: Supports <1 μA off-state leakage (IDSS ≤ -25 μA), preserving battery charge over extended parking periods. |
| Motor Control (HVAC Blower) | LED Headlamp Dimming |
Use Scenario: Drives brushed DC blower motor in automotive HVAC systems with PWM-based speed regulation. IC Role / Device Role / Timing Role: Low-side or high-side switching element in half-bridge configuration with integrated body diode freewheeling. Use Value: Body diode trr = 54–82 ns and Qrr = 110–160 nC minimize voltage overshoot and EMI during commutation. | Use Scenario: Controls current to high-power LED arrays in adaptive front-lighting systems (AFS). IC Role / Device Role / Timing Role: Constant-current switch operating in linear or PWM mode with precise thermal derating. Use Value: 175°C TJ rating and RθJC = 2.2 °C/W allow stable operation at ambient >105°C inside headlamp housings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9540NPBF | RDS(on) = 0.20 Ω @ VGS = -10 V; lower current rating (-19 A vs -17 A); no AEC-Q101 qualification | Not approved for automotive production; suitable only for industrial prototypes or non-safety-critical systems | Select when cost sensitivity outweighs qualification requirements and thermal margin permits higher on-resistance |
| STP12PF06 | V(BR)DSS = -60 V; RDS(on) = 0.15 Ω; Qg = 42 nC; AEC-Q101 qualified but higher gate charge increases driver demand | Higher voltage margin useful in 42 V architectures; slower switching limits high-frequency PWM use | Select when system requires >55 V blocking capability and can accommodate 20% longer switching transitions |
Compared with IRF9540NPBF and STP12PF06, AUIRF9Z34N-INF offers the lowest RDS(on) among AEC-Q101-qualified P-channel TO-220 devices at -55 V, delivering superior conduction efficiency and thermal headroom for space-constrained automotive modules.
Availability
AUIRF9Z34N-INF is available at Aetrix Electronics and suitable for reverse polarity protection, battery disconnect switching, HVAC motor control, and LED headlamp dimming requiring stable component supply across automotive production lifecycles.
Supply support for AUIRF9Z34N-INF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.
AUIRF9Z34N-INF belongs to Infineon's automotive-grade HEXFET® Power MOSFET product line, engineered specifically for high-reliability 12 V/24 V vehicle subsystems demanding robustness against voltage transients, thermal stress, and long-term operational stability.
FAQ
Is AUIRF9Z34N-INF pin-compatible with standard TO-220AB footprints?
Yes. AUIRF9Z34N-INF uses the industry-standard TO-220AB mechanical outline with 2.54 mm lead pitch and 6.35 mm lead spacing. The drain is internally connected to the metal tab, and the pin order (G-D-S) matches JEDEC TO-220AB specification, enabling direct replacement in existing layouts without footprint modification.
What is the maximum allowable gate-source voltage for reliable operation?
The absolute maximum VGS rating is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. For robust design, gate drive should be limited to -12 V to -10 V for full enhancement, with transient clamping recommended if driving from unregulated sources or in noisy environments.
Does the body diode support continuous conduction in synchronous rectification?
No. While the integral body diode is rated for -19 A continuous source current (IS), its forward voltage (-1.6 V) and recovery characteristics (trr = 54–82 ns) make it unsuitable for high-efficiency synchronous rectification. It is intended for freewheeling and fault clamping-not primary conduction paths.
How does the -55 V V(BR)DSS rating translate to real-world automotive voltage tolerance?
The -55 V rating provides 10 V margin above the worst-case automotive load-dump transient (ISO 7637-2 Pulse 5a: +120 V on 12 V systems). As a P-channel device, it blocks reverse polarity events up to -55 V, covering battery reversal, jump-start faults, and alternator field collapse spikes in 12 V networks.
AUIRF9Z34N-INF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-220-3
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 620 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
AUIRF9Z34N-INF FAQ
1.How can I place an order for AUIRF9Z34N-INF through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRF9Z34N-INF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRF9Z34N-INF reliable?
The price and inventory of AUIRF9Z34N-INF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF9Z34N-INF is usually 5 days.
3.What payment methods are accepted for AUIRF9Z34N-INF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF9Z34N-INF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRF9Z34N-INF?
AUIRF9Z34N-INF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRF9Z34N-INF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRF9Z34N-INF?
For technical support, including AUIRF9Z34N-INF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF9Z34N-INF requirements.
6.How does Aetrix verify that AUIRF9Z34N-INF is sourced from the original manufacturer or authorized distributors?
All AUIRF9Z34N-INF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF9Z34N-INF meets industry standards.
7.What is the process for return or replacement of AUIRF9Z34N-INF?
All AUIRF9Z34N-INF units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF9Z34N-INF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRF9Z34N-INF part is unused and in its original packaging.
Return procedure for AUIRF9Z34N-INF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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