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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFB4410

Name: AUIRFB4410
Brand: Infineon Technologies
SKU: AUIRFB4410
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFB4410

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: AUIRFB4410.pdf

Description:: MOSFET N-CH 100V 75A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:8,960

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Product details

Overview

AUIRFB4410 from Infineon Technologies (formerly International Rectifier) is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, rated for 100 V V_DSS, 8.0 mΩ typical R_DS(on) at V_GS = 10 V, 88 A silicon-limited continuous drain current, and 175°C maximum junction temperature - deployed in high-reliability engine control units, DC-DC converters, and motor drive inverters.

For engineers reviewing the AUIRFB4410 datasheet, AUIRFB4410 pinout, AUIRFB4410 application, or AUIRFB4410 equivalent, this page delivers verified electrical parameters, thermal performance data, automotive qualification evidence (AEC-Q101), and real-world switching behavior including repetitive avalanche capability up to T_jmax, diode recovery characteristics, and gate charge profile under 25°C and 125°C conditions.

Technical Context

This device uses advanced trench-gate process technology to achieve ultra-low on-resistance per die area while maintaining robust dynamic dV/dt immunity (rated per datasheet test conditions). Its intrinsic body diode supports fast reverse recovery (t_rr = 38–77 ns) with low Q_rr (61–170 nC) across temperature, enabling efficient synchronous rectification and unclamped inductive switching.

The MOSFET is characterized for operation up to 175°C junction temperature with validated repetitive avalanche energy (E_AR = 63 mJ at T_j = 25°C), thermally limited single-pulse avalanche energy (E_AS = 300 mJ), and linear derating of power dissipation (1.3 W/°C above 25°C ambient) - all confirmed under board-mounted, still-air conditions per JEDEC JESD51-2.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche onset; enables use in 48 V automotive systems and 100 V industrial DC rails.
R_DS(on) typ.	8.0 mΩ @ V_GS = 10 V, T_j = 25°C - Delivers <1.3 W conduction loss at 58 A, critical for thermal management in compact power stages.
I_D (silicon-limited)	88 A @ T_C = 25°C - Silicon die capacity; actual usable current limited to 75 A by TO-220AB package thermal constraints.
Q_g max.	180 nC - Total gate charge determines driver strength requirement; impacts switching speed and gate drive loss in PWM applications.
t_rr	38–77 ns - Body diode reverse recovery time varies with temperature and di/dt; directly affects shoot-through risk and EMI in half-bridge topologies.
E_AS	300 mJ - Single-pulse avalanche energy rating confirms ruggedness against inductive load transients without external snubbers.
R_θJC	0.61 °C/W - Junction-to-case thermal resistance enables accurate heatsink sizing when mounted with greased flat surface (R_θCS = 0.50 °C/W).

Pinout & Package

TO-220AB package with isolated tab; standard 3-pin through-hole mounting. Pin assignment verified per IRF datasheet Fig. 1 and mechanical drawing: Gate (G), Drain (D), Source (S) - leads arranged left-to-right as G-D-S when viewed with tab facing outward and leads down.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive to fully enhance channel; threshold voltage 2.0–4.0 V ensures compatibility with 3.3 V/5 V microcontrollers via gate driver.
D (Drain)	High-side power terminal	Connected to positive rail or inductive load; rated for 100 V blocking and repetitive avalanche events up to I_AR = 88 A.
S (Source)	Return path / reference node	Serves as power ground reference for gate drive; internal body diode anode connects here - critical for freewheeling path design.

Key Features

Feature	Design Value
Automotive qualification	AEC-Q101 qualified per IRF specification; includes HBM (2 kV), CDM (1125 V), and MM (425 V) ESD testing - required for under-hood ECUs.
175°C operating junction	Enables deployment in high-ambient environments (e.g., near engine blocks) without derating; validated via accelerated life testing at T_j = 175°C.
Ultra-low R_DS(on)	8.0 mΩ typ. reduces conduction losses by >30% vs. legacy 100 V MOSFETs - improves efficiency in 12 V/48 V battery-fed motor drives.
Fast switching	Turn-on delay 24 ns, rise time 80 ns, turn-off delay 55 ns - supports >100 kHz PWM in DC-DC converters with minimal overlap loss.
Repetitive avalanche rated	63 mJ E_AR at T_j = 25°C - allows safe operation in unclamped inductive switching (e.g., solenoid drivers) without external protection.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

48 V Automotive DC-DC Converter Primary Switch

Use Scenario: High-speed switching of fuel injector coils in gasoline direct injection systems requiring precise pulse-width modulation at 1–10 Hz with peak currents up to 58 A.

IC Role / Device Role / Timing Role: Power switch controlling coil energization; operates in hard-switched mode with unclamped inductive flyback.

Use Value: Repetitive avalanche rating (E_AR = 63 mJ) eliminates need for external clamping diodes; 175°C rating ensures reliability near hot engine manifolds.

Use Scenario: Primary-side high-side switch in bidirectional 48 V–12 V DC-DC converter for mild hybrid vehicles, handling 50–100 kHz PWM with 30 A RMS current.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in non-isolated buck-boost topology; body diode used during dead-time conduction.

Use Value: Low Q_rr (61–170 nC) and fast t_rr (38–77 ns) minimize reverse recovery loss and EMI; R_DS(on) = 8.0 mΩ keeps conduction loss below 1.5 W at full load.

Electric Power Steering (EPS) Motor Inverter Phase Leg

Commercial Vehicle HVAC Blower Motor Driver

Use Scenario: Half-bridge phase-leg switch in 3-phase EPS inverter delivering 20–40 A RMS to brushless DC motor, operating continuously at ambient up to 105°C.

IC Role / Device Role / Timing Role: Low-side switching element with source tied to system ground; gate driven by isolated gate driver with 10 V supply.

Use Value: R_θJC = 0.61 °C/W enables direct heatsink mounting; 175°C T_jmax supports sustained operation at case temperatures >110°C without thermal shutdown.

Use Scenario: High-current PWM switch controlling 24 V blower motor in heavy-duty truck HVAC systems, subject to vibration, wide temperature swings, and load dump transients.

IC Role / Device Role / Timing Role: Single-ended switch in high-side configuration with integrated freewheeling path via body diode.

Use Value: AEC-Q101 qualification ensures compliance with ISO 16750-2; 100 V V_DSS withstands 30 V load dump spikes per ISO 7637-2 Pulse 5a.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL120N10F7	100 V, 120 A, R_DS(on) = 5.5 mΩ typ., TO-220FP package, AEC-Q101 qualified	Higher current rating but lower thermal mass; requires tighter gate drive timing due to higher Q_g (195 nC)	Preferred where peak current exceeds 88 A and PCB space permits larger footprint; not drop-in due to different pinout (G-S-D).
IRF1404ZPBF	40 V, 202 A, R_DS(on) = 3.8 mΩ typ., TO-220AB, industrial grade only (not AEC-Q101)	Lower voltage rating limits use to 24 V systems; lacks automotive qualification and 175°C operation	Acceptable for non-automotive 24 V motor drives where cost is prioritized over qualification; unsuitable for under-hood deployment.

Compared with STL120N10F7 and IRF1404ZPBF, the AUIRFB4410 uniquely balances 100 V blocking, AEC-Q101 compliance, 175°C operation, and TO-220AB pin compatibility - making it the only option qualified for safety-critical 48 V automotive loads with thermal margin at elevated ambient.

Availability

AUIRFB4410 is available at Aetrix Electronics and suitable for engine control units, 48 V DC-DC converters, and electric power steering systems requiring stable component supply across extended vehicle lifecycles and production ramp schedules.

Supply support for AUIRFB4410 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

The AUIRFB4410 belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine, transmission, and chassis control modules.

FAQ

Is AUIRFB4410 pin-compatible with standard TO-220AB MOSFETs?

Yes - AUIRFB4410 uses the industry-standard TO-220AB outline with G-D-S lead arrangement (viewed with tab facing outward and leads down), matching mechanical and solder footprint requirements of IRF540, IRFZ44N, and similar devices. No PCB redesign is needed for substitution within voltage/current limits.

What is the maximum recommended gate drive voltage for AUIRFB4410?

The absolute maximum gate-to-source voltage is ±20 V, but the device is fully enhanced at V_GS = 10 V and optimized for 10–15 V drive. Driving above 15 V provides negligible R_DS(on) improvement while increasing gate oxide stress and ESD vulnerability - 10 V is the recommended nominal drive level.

Does AUIRFB4410 require a gate resistor for automotive applications?

Yes - a gate resistor (typically 4.1–25 Ω) is required to control dv/dt and prevent parasitic oscillation during switching. The datasheet specifies R_G = 25 Ω for avalanche testing and R_G = 4.1 Ω for switching time characterization; values between 10–22 Ω balance EMI suppression and switching loss in 48 V systems.

Can AUIRFB4410 replace IRF3205 in automotive designs?

No - IRF3205 is a 55 V, 110 A MOSFET not qualified to AEC-Q101 and rated only to 175°C junction temperature under derated conditions. AUIRFB4410 offers higher voltage rating (100 V), automotive qualification, and validated repetitive avalanche performance - making it unsuitable as a direct replacement unless the system operates strictly below 40 V and does not require automotive certification.

AUIRFB4410 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 58A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 180 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5150 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

AUIRFB4410 FAQ

1.How can I place an order for AUIRFB4410 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFB4410 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFB4410 reliable?

The price and inventory of AUIRFB4410 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFB4410 is usually 5 days.

3.What payment methods are accepted for AUIRFB4410?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFB4410 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFB4410?

AUIRFB4410 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFB4410 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFB4410?

For technical support, including AUIRFB4410 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFB4410 requirements.

6.How does Aetrix verify that AUIRFB4410 is sourced from the original manufacturer or authorized distributors?

All AUIRFB4410 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFB4410 meets industry standards.

7.What is the process for return or replacement of AUIRFB4410?

All AUIRFB4410 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFB4410, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFB4410 part is unused and in its original packaging.

Return procedure for AUIRFB4410:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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