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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFB8409

Name: AUIRFB8409
Brand: Infineon Technologies
SKU: AUIRFB8409
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFB8409

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: AUIRFB8409.pdf

Description:: MOSFET N-CH 40V 195A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:1,986

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Product details

Overview

AUIRFB8409 from Infineon Technologies is an N-channel automotive-grade HEXFET® Power MOSFET in TO-220AB package, rated for 40 V V_DS, 1.0 mΩ typical R_DS(on) at 10 V V_GS, 195 A package-limited continuous drain current, and 175°C maximum junction temperature - designed for high-current DC-DC conversion and battery switching in electric power steering (EPS) systems.

For engineers reviewing the AUIRFB8409 datasheet, AUIRFB8409 pinout, AUIRFB8409 application, or AUIRFB8409 equivalent, key selection criteria include its ultra-low on-resistance, repetitive avalanche capability up to T_Jmax, fast switching (t_r = 105 ns, t_f = 100 ns), body diode recovery performance (Q_rr = 97 nC), and thermal robustness under automotive ambient conditions.

Technical Context

This MOSFET employs advanced silicon processing to achieve sub-1.2 mΩ R_DS(on) while maintaining 40 V breakdown voltage and a 175°C operating junction temperature. Its gate charge profile (Q_g = 300–450 nC, Q_gd = 98 nC) supports efficient high-frequency switching in synchronous rectification and H-bridge motor control topologies.

The integrated body diode exhibits low forward voltage (V_SD = 0.86 V typ. at 100 A), fast reverse recovery (t_rr = 52 ns), and controlled dv/dt immunity (2.7 V/ns), enabling reliable operation in inductive load switching and unclamped inductive turn-off events common in EPS and start-stop systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Withstands transient overvoltage spikes up to 40 V in 12 V/48 V automotive battery systems without breakdown.
R_DS(on) (typ.)	1.0 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 100 A, critical for thermal management in compact EPS modules.
I_D (package)	195 A @ T_C = 25°C - Matches mechanical lead-frame current-carrying capacity; limits design to PCB-mount heatsinking with low R_θJC = 0.40°C/W.
Q_g	300–450 nC - Determines gate driver power requirement; necessitates ≥2 A peak drive capability for ≤100 ns switching transitions.
E_AS	760 mJ - Specifies single-pulse avalanche energy handling; allows safe operation during inductive flyback without external snubbers.
t_r/t_f	105 ns / 100 ns - Supports >100 kHz PWM frequencies in DC-DC converters while limiting switching losses and EMI generation.
T_J max	175°C - Enables sustained operation in engine-bay environments where case temperatures exceed 125°C.

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, and industry-standard footprint compatible with manual soldering and wave-reflow processes per AN-994.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to metal tab; requires insulated mounting hardware when heatsink is grounded.
Source	Power return path / reference node for gate drive	Serves as common return for load current and gate driver ground; layout must minimize inductance to prevent shoot-through.
Gate	Control input for channel conduction	High-impedance MOS gate requiring low-inductance routing and RC damping to suppress ringing during fast edge transitions.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	1.0 mΩ typ. enables <1.0 W conduction loss at 100 A, reducing heatsink size by ≥40% vs. legacy 2 mΩ devices.
175°C junction rating	Allows full-rated current delivery at ambient temperatures up to 125°C, eliminating derating in under-hood EPS control units.
Repetitive avalanche capability	Rated for repeated unclamped inductive switching up to I_AS = 100 A, supporting robust fault tolerance in motor phase-legs.
Fast body diode recovery	t_rr = 52 ns and Q_rr = 97 nC minimize reverse recovery losses and voltage overshoot in synchronous rectifier configurations.
Automotive qualification	AEC-Q101 qualified with zero early-life failures in HTOL testing; meets ISO/TS 16949 manufacturing controls.

Applications

Electric Power Steering (EPS)

Battery Disconnect Switch

Use Scenario: High-current H-bridge driving 3-phase EPS motor during assist maneuvers with peak currents >150 A.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in motor phase-legs; handles bidirectional current with body-diode freewheeling.

Use Value: 1.0 mΩ R_DS(on) reduces conduction loss by 50% vs. 2 mΩ alternatives, directly improving system efficiency and thermal margin at 175°C junction limit.

Use Scenario: Solid-state replacement for mechanical relay in 12 V/48 V battery isolation circuits for start-stop and micro-hybrid architectures.

IC Role / Device Role / Timing Role: Unidirectional high-current switch controlling main battery feed to vehicle subsystems; operates in static on/off mode with occasional fast transients.

Use Value: 195 A package-limited current and 760 mJ E_AS enable reliable interruption of 150 A loads without contact wear or arcing failure modes.

DC-DC Converter (48 V → 12 V)

Heavy-Duty Load Switching

Use Scenario: Synchronous rectifier in high-efficiency buck converter supplying 100+ A to ADAS domain controllers and infotainment systems.

IC Role / Device Role / Timing Role: Secondary-side power switch operating at 200–500 kHz; conducts during low-side half-cycle with body diode conducting during dead time.

Use Value: Fast t_r/t_f (105/100 ns) and low Q_gd (98 nC) reduce switching loss and improve light-load efficiency versus slower 300 ns devices.

Use Scenario: High-power actuator driver for HVAC compressors, seat motors, or trailer brake controllers demanding >100 A pulsed current.

IC Role / Device Role / Timing Role: Single-ended load switch placed between battery rail and motor winding; subjected to inductive kickback and thermal cycling.

Use Value: Repetitive avalanche rating (I_AR = 100 A, E_AR = 375 mJ) eliminates need for external TVS clamping, simplifying BOM and PCB layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 0.95 mΩ typ., TO-220FP package, R_θJA = 50°C/W (higher thermal resistance)	Limited to lower-power applications due to smaller package thermal mass and no AEC-Q101 documentation in public datasheet	Prefer AUIRFB8409 where board-level thermal management is constrained and automotive qualification is mandatory.
IRFB4115PBF	150 V, 4.5 mΩ, TO-220AB, non-automotive grade, T_Jmax = 175°C	Higher voltage rating but 4.5× higher R_DS(on); unsuitable for 40 V EPS or DC-DC where conduction loss dominates	Select AUIRFB8409 for 40 V systems requiring minimal conduction loss and guaranteed automotive reliability.

Compared with STL220N4F7AG and IRFB4115PBF, AUIRFB8409 uniquely combines 40 V rating, sub-1.2 mΩ on-resistance, AEC-Q101 qualification, and 175°C operation - making it the only choice for thermally dense, safety-critical automotive power stages where both efficiency and long-term field reliability are non-negotiable.

Availability

AUIRFB8409 is available at Aetrix Electronics and suitable for Electric Power Steering (EPS), Battery Disconnect Switch, and DC-DC Converter applications requiring stable component supply, automotive-grade traceability, and volume production support.

Supply support for AUIRFB8409 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

AUIRFB8409 belongs to the HEXFET® Automotive Power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine compartment and chassis-mounted electronic control units.

FAQ

What is the maximum continuous drain current for AUIRFB8409 at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 289 A (silicon-limited) per the datasheet's Absolute Maximum Ratings table. However, the package-limited rating remains 195 A regardless of temperature, as bond wire current capacity defines the practical limit under real PCB-mount conditions.

Is AUIRFB8409 pin-compatible with other TO-220AB N-channel MOSFETs like IRF1404?

No - although both use TO-220AB packages, AUIRFB8409 has drain-connected tab and standard D-S-G pinout, whereas IRF1404 uses D-G-S pinout. Physical insertion into the same footprint will result in incorrect gate-source connection and immediate device failure if powered.

Does AUIRFB8409 require a gate resistor for automotive PWM applications?

Yes - a series gate resistor (typically 2.7–10 Ω) is required to dampen ringing caused by gate loop inductance and internal R_G (2.1 Ω), especially in high-di/dt EPS motor drives. Omitting it risks gate oscillation, false turn-on, and accelerated gate oxide degradation under vibration.

Can AUIRFB8409 be used in parallel configurations for >200 A applications?

Yes - its positive R_DS(on) temperature coefficient (0.0014 Ω/°C) ensures inherent current sharing stability. Successful parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared heatsinking to maintain ΔT_J < 5°C between devices per Infineon application note AN-1001.

AUIRFB8409 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 450 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 14240 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

AUIRFB8409 FAQ

1.How can I place an order for AUIRFB8409 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFB8409 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFB8409 reliable?

The price and inventory of AUIRFB8409 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFB8409 is usually 5 days.

3.What payment methods are accepted for AUIRFB8409?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFB8409 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFB8409?

AUIRFB8409 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFB8409 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFB8409?

For technical support, including AUIRFB8409 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFB8409 requirements.

6.How does Aetrix verify that AUIRFB8409 is sourced from the original manufacturer or authorized distributors?

All AUIRFB8409 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFB8409 meets industry standards.

7.What is the process for return or replacement of AUIRFB8409?

All AUIRFB8409 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFB8409, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFB8409 part is unused and in its original packaging.

Return procedure for AUIRFB8409:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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