Infineon Technologies AUIRFBA1405

Overview

AUIRFBA1405 from Infineon Technologies (formerly International Rectifier) is an automotive-grade N-channel HEXFET® Power MOSFET in TO-220 package, rated for 55 V V(BR)DSS, 4.3 mΩ typ. RDS(on), and 95 A continuous drain current (package-limited). It delivers high-efficiency switching in engine control units, DC-DC converters, and battery disconnect circuits where ruggedness, low conduction loss, and AEC-Q101 qualification are mandatory.

For engineers reviewing the AUIRFBA1405 datasheet, AUIRFBA1405 pinout, AUIRFBA1405 application, or AUIRFBA1405 equivalent, key selection criteria include its 0.45 °C/W junction-to-case thermal resistance, 170 nC total gate charge, 101 A avalanche current rating, and validated performance under repetitive unclamped inductive switching per AEC-Q101-005.

Technical Context

This MOSFET employs stripe planar silicon processing to minimize on-resistance per die area while maintaining robust avalanche capability. Its body diode exhibits 88 ns typical reverse recovery time and 250 nC reverse recovery charge at IF = 101 A, enabling efficient synchronous rectification and freewheeling in high-current automotive power stages.

The device operates with a gate threshold voltage of 2.0–4.0 V and forward transconductance of 69 S, supporting direct drive from standard 3.3 V/5 V microcontrollers when used with appropriate gate buffering. Thermal design is anchored by a fixed 0.45 °C/W RθJC, enabling predictable heatsink sizing under 95 A continuous load at TC = 25°C.

Key Specifications

Pinout & Package

Supplied in TO-220AB package with isolated tab (drain-connected), featuring three leads: Gate (G), Drain (D), and Source (S). The metal tab is electrically connected to the drain terminal and must be insulated from heatsink unless system grounding permits.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Compared with STL220N4L5AG and IRFB4115PBF, AUIRFBA1405 uniquely combines AEC-Q101 avalanche validation, 55 V rating matched to 48 V architecture, and 4.3 mΩ RDS(on) in a proven TO-220 form factor-making it optimal for safety-critical automotive power switching where qualification and thermal predictability are non-negotiable.

Availability

AUIRFBA1405 is available at Aetrix Electronics and suitable for engine control units, 48 V mild hybrid DC-DC converters, and battery disconnect units requiring stable component supply across extended vehicle lifecycles.

Supply support for AUIRFBA1405 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with headquarters in Munich, Germany.

The AUIRFBA1405 belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability 12 V/48 V vehicle subsystems demanding robust avalanche performance and long-term thermal stability.

FAQ

Is AUIRFBA1405 pin-compatible with standard TO-220 N-channel MOSFETs?

Yes - AUIRFBA1405 uses standard TO-220AB pinout (G-D-S left-to-right with tab as Drain), enabling drop-in replacement for other TO-220 N-channel devices in existing layouts. However, its 0.45 °C/W RθJC and AEC-Q101 qualification require verification of thermal interface and system-level reliability compliance.

What is the maximum recommended gate drive voltage for AUIRFBA1405?

The absolute maximum gate-to-source voltage is ±20 V, but Infineon specifies 10 V as the optimal drive level for full enhancement and minimal RDS(on). Driving above 15 V provides negligible RDS(on) improvement while increasing gate oxide stress and ESD risk in automotive environments.

Does AUIRFBA1405 require a gate resistor for automotive switching applications?

Yes - a gate resistor (typically 10–47 Ω) is required to dampen ringing, control dv/dt, and limit peak gate current during fast switching. The datasheet specifies RG = 1.1 Ω for dynamic characterization, but system-level EMI and shoot-through prevention necessitate higher values in practical designs.

Can AUIRFBA1405 be used in parallel configurations for higher current handling?

Yes - its positive RDS(on) temperature coefficient (0.057 V/°C) enables inherent current sharing. Successful paralleling requires matched layout symmetry, identical gate drive paths, and individual source resistors (5–10 mΩ) to suppress oscillation and ensure thermal balance across devices.