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Infineon Technologies AUIRFN7110TR
- Part No.:
- AUIRFN7110TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
AUIRFN7110TR.pdf
- Description:
- MOSFET N-CH 100V 58A 8PQFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,090
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Product details
Overview
AUIRFN7110TR from Infineon Technologies (formerly International Rectifier) is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in a PQFN 5 mm × 6 mm package, rated for 100 V VDSS, 11.5 mΩ typ. RDS(on) at VGS = 10 V, 58 A continuous drain current at TC = 25°C, and 175°C maximum junction temperature - deployed in 48V automotive systems for high-efficiency DC-DC conversion and E-horn actuation.
For engineers reviewing the AUIRFN7110TR datasheet, AUIRFN7110TR pinout, AUIRFN7110TR application, or AUIRFN7110TR equivalent, this page delivers verified thermal resistance (RθJC(Bottom) = 1.2°C/W), avalanche energy rating (EAS = 133 mJ), gate charge profile (Qg = 49 nC typ.), diode recovery metrics (trr = 27 ns), and automotive qualification status per AEC-Q101.
Technical Context
This MOSFET employs advanced silicon process technology to achieve ultra-low on-resistance with fast switching dynamics and robust unclamped inductive switching capability. Its 175°C operating junction temperature and repetitive avalanche rating up to Tjmax enable reliable operation in thermally demanding automotive power stages.
The device features a low-inductance PQFN package with exposed drain pad for bottom-side thermal conduction, integrated body diode with VSD = 1.3 V at IS = 35 A, and gate threshold voltage of 3.0 V typ. (2.0–4.0 V range), supporting standard 10 V gate drive while maintaining noise immunity in noisy vehicle environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Maximum drain-to-source blocking voltage before avalanche onset; supports 48V system transients up to ISO 7637-2 Pulse 5a. |
| RDS(on) typ. | 11.5 mΩ at VGS = 10 V, ID = 35 A - Enables <1.5 W conduction loss at 35 A, critical for high-current DC-DC phase legs. |
| ID cont. @ TC = 25°C | 58 A - Silicon-limited continuous current; defines safe steady-state operation with adequate heatsinking. |
| EAS | 133 mJ - Single-pulse avalanche energy rating; allows safe operation during unclamped inductive turn-off events in solenoid drivers. |
| RθJC(Bottom) | 1.2°C/W - Junction-to-case thermal resistance measured via bottom thermal pad; enables direct PCB copper thermal coupling for high-power density layouts. |
| Qg | 49 nC typ. - Total gate charge required for full enhancement; determines gate driver power and switching speed trade-offs in 100–500 kHz converters. |
| trr | 27 ns - Body diode reverse recovery time at IF = 35 A, dI/dt = 500 A/µs - Minimizes commutation losses and voltage overshoot in synchronous rectification. |
Pinout & Package
Package: PQFN 5 mm × 6 mm with exposed drain pad (pin 1 identified by marking dot). Thermal performance optimized for bottom-side heat transfer via soldered thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main power output terminal / exposed thermal pad | Electrically and thermally connected to internal die drain; must be soldered to large PCB copper area for thermal management. |
| Source (S) | Power return path / reference node for gate drive | Common connection point for load return and gate driver ground; low-inductance layout essential for switching stability. |
| Gate (G) | Control input for channel conduction | High-impedance MOS control node; requires low-impedance gate driver and RC snubber to suppress ringing during fast dv/dt transitions. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive underhood applications including temperature cycling, humidity, and mechanical shock per JEDEC standards. |
| 175°C maximum junction temperature | Enables sustained operation in engine bay environments without derating below 125°C ambient, reducing need for oversized heatsinks. |
| Repetitive avalanche rated | Permits repeated unclamped inductive switching up to Tjmax, eliminating need for external clamping circuits in E-horn and injector drivers. |
| Ultra-low RDS(on) × Qg figure-of-merit | ~565 Ω·nC - Balances conduction and switching losses for high-frequency (>200 kHz) 48V buck converters. |
| Lead-free, RoHS-compliant | Meets EU Directive 2011/65/EU and automotive ELV requirements; compatible with standard Pb-free reflow profiles (peak 260°C). |
Applications
| Automotive Fuel Injector Driver | 48V–12V DC-DC Buck Converter |
|---|---|
|
Use Scenario: High-speed, high-current switching of solenoid-based gasoline direct injection (GDI) valves in modern ICE powertrains. IC Role / Device Role / Timing Role: Primary high-side or low-side power switch controlling valve coil energization and de-energization with sub-millisecond timing precision. Use Value: 11.5 mΩ RDS(on) minimizes coil heating during dwell time; 133 mJ EAS absorbs inductive kickback without external snubbers. |
Use Scenario: Primary switch in high-efficiency bidirectional 48V–12V DC-DC converters for mild hybrid electric vehicles (MHEVs). IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch operating at 200–300 kHz with tight duty-cycle control. Use Value: 27 ns trr and 49 nC Qg reduce dead-time losses and gate drive power; 1.2°C/W RθJC enables compact thermal design. |
| Automotive E-Horn Actuator | LED Headlamp Matrix Driver |
|
Use Scenario: Driving electromagnetic horn coils requiring high peak current (≥100 A pulsed) and rapid turn-on/turn-off response. IC Role / Device Role / Timing Role: Low-side switch enabling PWM-controlled horn volume and tone modulation. Use Value: 232 A pulsed drain current (IDM) and 175°C Tj support short-duration overloads without thermal shutdown. |
Use Scenario: Individual pixel-level current switching in adaptive LED headlamps with dynamic beam shaping. IC Role / Device Role / Timing Role: High-reliability, low-RDS(on) switch controlling segmented LED strings in harsh thermal environments. Use Value: AEC-Q101 qualification ensures long-term reliability under vibration and thermal cycling; 100 V rating accommodates load-dump transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | 100 V, 2.2 mΩ RDS(on) (lower), but 5×6 mm H2PAK-2 package (larger footprint); higher Qg (120 nC) | Better conduction efficiency at >50 A, but slower switching and larger board area; less suitable for space-constrained DC-DC phases | Select when lowest conduction loss dominates; avoid if gate drive capability or layout area is constrained. |
| ON Semiconductor NTMFS5C675NL | 100 V, 12.5 mΩ RDS(on), same PQFN 5×6 mm package; lower EAS (95 mJ), no AEC-Q101 documentation in public datasheet | Acceptable for non-safety-critical lighting or auxiliary loads; not recommended for injector or E-horn where avalanche robustness is mandatory | Select only for cost-sensitive non-automotive industrial applications; verify qualification status directly with ON Semi for automotive use. |
Compared with STL220N10F7 and NTMFS5C675NL, the AUIRFN7110TR offers the optimal balance of low RDS(on), proven avalanche ruggedness, compact PQFN footprint, and full AEC-Q101 compliance - making it preferred for safety-critical 48V automotive power switches where reliability and thermal performance are co-prioritized.
Availability
AUIRFN7110TR is available at Aetrix Electronics and suitable for automotive fuel injection systems, 48V–12V DC-DC converters, and E-horn actuators requiring stable component supply across extended production lifecycles and stringent environmental qualification.
Supply support for AUIRFN7110TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive microcontrollers, and sensor solutions with deep expertise in high-reliability silicon design.
The AUIRFN7110TR belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-current, high-temperature power switching in next-generation 48V mild hybrid architectures and electrified chassis systems.
FAQ
What is the maximum allowable case temperature for continuous operation?
The AUIRFN7110TR supports continuous operation up to TC = 100°C, delivering 41 A continuous drain current at that temperature. Derating follows a linear factor of 0.029 W/°C above 25°C ambient for power dissipation, and thermal design must ensure junction temperature remains ≤175°C under worst-case load and ambient conditions.
Does the AUIRFN7110TR require a gate resistor for stable switching?
Yes - a gate resistor (typically 2.2–10 Ω) is required to dampen gate oscillation and control dV/dt during turn-on/turn-off. The device's 1.0 Ω typical gate resistance and 49 nC total gate charge make it sensitive to parasitic inductance; improper gate drive can cause shoot-through or voltage overshoot exceeding 100 V.
Is the body diode suitable for synchronous rectification in DC-DC converters?
Yes - the integrated body diode has trr = 27 ns and Qrr = 152 nC at IF = 35 A, enabling efficient synchronous rectification in 200–500 kHz buck converters. However, its VSD = 1.3 V forward drop is higher than Schottky alternatives, so conduction loss must be evaluated against switching loss trade-offs.
How is the PQFN 5×6 mm package thermally mounted on PCB?
The PQFN package uses an exposed drain pad soldered directly to a large, multi-layer PCB copper pour connected to internal thermal vias. Recommended footprint follows IR application note AN-1136: ≥25 thermal vias (0.3 mm diameter, 0.8 mm pitch) beneath the pad, filled or capped, with ≥2 oz copper on inner layers to achieve effective RθJA < 22°C/W in real-world layouts.
AUIRFN7110TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 14.5mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 74 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3050 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4.3W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-PQFN (5x6)
AUIRFN7110TR FAQ
1.How can I place an order for AUIRFN7110TR through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRFN7110TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRFN7110TR reliable?
The price and inventory of AUIRFN7110TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFN7110TR is usually 5 days.
3.What payment methods are accepted for AUIRFN7110TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFN7110TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRFN7110TR?
AUIRFN7110TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRFN7110TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRFN7110TR?
For technical support, including AUIRFN7110TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFN7110TR requirements.
6.How does Aetrix verify that AUIRFN7110TR is sourced from the original manufacturer or authorized distributors?
All AUIRFN7110TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFN7110TR meets industry standards.
7.What is the process for return or replacement of AUIRFN7110TR?
All AUIRFN7110TR units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFN7110TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRFN7110TR part is unused and in its original packaging.
Return procedure for AUIRFN7110TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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