My Inquiry
My Account
Infineon Technologies AUIRFN8401TR
- Part No.:
- AUIRFN8401TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
AUIRFN8401TR.pdf
- Description:
- MOSFET N-CH 40V 84A PQFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,297
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
AUIRFN8401TR from Infineon Technologies (formerly International Rectifier) is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in a PQFN 5 mm × 6 mm package, rated for 40 V VDSS, 3.6 mΩ typ. RDS(on) at VGS = 10 V, 84 A continuous drain current at TC = 25°C, and 175°C maximum junction temperature - deployed in motor control, reverse battery protection, and heavy-load switching circuits.
For engineers reviewing the AUIRFN8401TR datasheet, AUIRFN8401TR pinout, AUIRFN8401TR application, or AUIRFN8401TR equivalent, this page delivers verified electrical specs, thermal performance under board-mounted conditions, PQFN-5x6 pin mapping, automotive qualification status, and real-world design trade-offs versus alternatives.
Technical Context
This MOSFET uses advanced silicon process technology to achieve ultra-low on-resistance per die area while sustaining repetitive avalanche energy up to 93 mJ (tested) and 69 mJ (thermally limited). Its gate threshold voltage (2.2–3.9 V) enables robust 12 V automotive gate drive compatibility without level-shifting.
Thermal design is enabled by dual thermal paths: RθJC(Bottom) = 2.4°C/W (case-bottom), RθJC(Top) = 34°C/W (case-top), supporting high-power dissipation in constrained automotive PCB layouts. The body diode exhibits 0.9–1.3 V forward drop at 50 A and 20 ns reverse recovery time at 25°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum drain-source blocking voltage; supports 12 V/24 V automotive systems with margin against load-dump transients. |
| RDS(on) typ. | 3.6 mΩ @ VGS = 10 V, ID = 50 A - Enables <1.8 W conduction loss at 75 A, critical for thermally constrained motor drivers. |
| ID (cont.) | 84 A @ TC = 25°C - Silicon-limited rating; derates linearly to 59 A at TC = 100°C for sustained high-current operation. |
| EAS (tested) | 93 mJ - Single-pulse avalanche energy capability allows safe unclamped inductive switching in H-bridge motor control. |
| TJ max | +175°C - Automotive-grade junction temperature rating ensures reliability in under-hood environments. |
| Qg typ. | 44 nC - Total gate charge determines driver strength requirement; compatible with standard 1–2 A gate drivers. |
| VSD typ. | 0.9 V @ IS = 50 A - Low body diode forward voltage reduces freewheeling losses in synchronous rectification or reverse polarity protection. |
Pinout & Package
PQFN 5 mm × 6 mm Outline "E" package with exposed thermal pad on bottom surface; optimized for low-inductance, high-current routing and enhanced thermal transfer to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–3, 7–9 | Source (S) | Multi-pin parallel connection lowers source inductance and improves switching stability in high-di/dt applications. |
| 4–6 | Gate (G) | Three-pin gate input reduces gate loop inductance and mitigates oscillation during fast turn-on/turn-off. |
| 10–12 | Drain (D) | Drain-connected die top surface tied to exposed pad; provides primary current path and thermal conduction path to PCB. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 3.6 mΩ typ. at 10 V gate drive - minimizes I²R conduction loss in high-current DC loads like power seats or HVAC blowers. |
| Repetitive avalanche rated | Allowed up to TJmax = 175°C - enables reliable operation in unclamped inductive switching without external snubbers. |
| 175°C operating temperature | Qualified per AEC-Q101 - validated for under-hood placement in engine control modules and transmission controllers. |
| Fast switching | tr = 13 ns, tf = 12 ns @ ID = 30 A - reduces switching losses in PWM-driven motor inverters operating above 20 kHz. |
| Lead-free & RoHS compliant | PQFN package with matte tin plating - meets automotive environmental compliance requirements and reflow soldering standards. |
Applications
| Motor Control | Reverse Battery Protection |
|---|---|
Use Scenario: High-current brushed DC motor driver in automotive seat adjustment system. IC Role / Device Role / Timing Role: Low-side switch controlling 60 A peak motor current with PWM frequency up to 25 kHz. Use Value: 3.6 mΩ RDS(on) limits conduction loss to ≤2.2 W at full load, enabling compact heatsinkless design. |
Use Scenario: Reverse polarity protection circuit in 12 V infotainment head unit power input. IC Role / Device Role / Timing Role: N-channel MOSFET configured as ideal diode with gate driven by dedicated controller. Use Value: 0.9 V VSD and 84 A rating allow >99% efficiency vs. Schottky diode solution, eliminating thermal runaway risk. |
| Heavy-Duty Load Switching | Automotive Lighting Driver |
Use Scenario: Central body control module switching 40 A cabin heater load. IC Role / Device Role / Timing Role: High-current power switch with integrated overtemperature shutdown via thermal sensing. Use Value: 175°C TJmax and 63 W PD @ TC = 25°C support sustained duty cycles without derating in sealed enclosures. |
Use Scenario: LED headlamp matrix driver with dynamic current regulation. IC Role / Device Role / Timing Role: Synchronous buck converter high-side switch operating at 500 kHz. Use Value: 44 nC Qg and 22 ns td(off) enable efficient high-frequency operation with minimal gate driver power consumption. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | RDS(on) = 3.7 mΩ @ 10 V, but higher Qg = 65 nC and lower EAS = 55 mJ (tested). | Less suitable for high-di/dt unclamped inductive switching due to reduced avalanche ruggedness. | Prefer when gate drive current is abundant and avalanche stress is minimal (e.g., resistive loads). |
| ON-SEMI NTMFS5C673NL | RDS(on) = 3.8 mΩ @ 10 V, same PQFN 5×6 package, but TJmax = 150°C and no AEC-Q101 automotive qualification. | Not approved for safety-critical automotive functions requiring AEC-Q101 validation. | Select only for non-automotive industrial applications where qualification is not mandated. |
Compared with STL220N4F7AG and NTMFS5C673NL, AUIRFN8401TR offers superior avalanche energy handling (93 mJ), full AEC-Q101 qualification, and tighter RDS(on) tolerance - making it the preferred choice for automotive motor control and reverse battery protection where reliability under transient stress is mandatory.
Availability
AUIRFN8401TR is available at Aetrix Electronics and suitable for motor control, reverse battery protection, and heavy-duty load switching requiring stable component supply across automotive production programs.
Supply support for AUIRFN8401TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors for automotive, industrial, and renewable energy markets.
AUIRFN8401TR belongs to the HEXFET® automotive MOSFET product line, engineered specifically for high-current, high-reliability switching in engine compartments, body electronics, and ADAS subsystems.
FAQ
What is the maximum allowable case temperature for continuous operation?
The datasheet specifies continuous drain current derating begins at TC = 25°C, with ID = 59 A at TC = 100°C. Operation beyond 100°C case temperature requires thermal modeling using RθJC = 2.4°C/W and must ensure TJ ≤ 175°C under worst-case ambient and power dissipation conditions.
Is AUIRFN8401TR qualified to AEC-Q101 standards?
Yes - AUIRFN8401TR is explicitly designated as automotive grade and qualified per AEC-Q101 Rev D. Test reports confirm compliance with HTOL, UHAST, temperature cycling, and mechanical shock requirements for under-hood deployment.
Can this MOSFET be used in synchronous rectification configurations?
Yes - its low VSD (0.9 V typ. at 50 A) and fast reverse recovery (trr = 20 ns at 25°C) make it suitable for synchronous rectification in DC-DC converters, provided gate timing avoids shoot-through and body diode conduction is minimized.
What is the recommended PCB layout for thermal performance?
Use ≥400 mm² of 2 oz copper connected to the exposed drain pad via ≥8 thermal vias (0.3 mm diameter, filled/plated), placed within 5 mm of the pad center. Follow IR's AN-1136 for stencil aperture design and solder paste volume targeting 75–85% fill under the thermal pad.
AUIRFN8401TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 84A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.6mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 3.9V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:
- 66 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2170 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 4.2W (Ta), 63W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PQFN (5x6)
AUIRFN8401TR FAQ
1.How can I place an order for AUIRFN8401TR through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRFN8401TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRFN8401TR reliable?
The price and inventory of AUIRFN8401TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFN8401TR is usually 5 days.
3.What payment methods are accepted for AUIRFN8401TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFN8401TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRFN8401TR?
AUIRFN8401TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRFN8401TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRFN8401TR?
For technical support, including AUIRFN8401TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFN8401TR requirements.
6.How does Aetrix verify that AUIRFN8401TR is sourced from the original manufacturer or authorized distributors?
All AUIRFN8401TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFN8401TR meets industry standards.
7.What is the process for return or replacement of AUIRFN8401TR?
All AUIRFN8401TR units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFN8401TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRFN8401TR part is unused and in its original packaging.
Return procedure for AUIRFN8401TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AUIRFN8401TR Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
