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Infineon Technologies AUIRFN8478TR
- Part No.:
- AUIRFN8478TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
AUIRFN8478TR.pdf
- Description:
- AUIRFN8478 - 20V-40V N-CHANNEL A
- Quantity:
- Payment:
- Shipping:
Inventory:21,000
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Product details
Overview
AUIRFN8478TR from Infineon Technologies is a dual N-channel automotive-grade power MOSFET in a 5 mm × 6 mm PQFN package, rated for 40 V VDSS, 8.0 mΩ typical RDS(on) at 10 V VGS, and 43 A continuous drain current at TC = 25°C. It delivers ultra-low conduction loss and fast switching for high-efficiency 12 V automotive power stages including motor control and braking circuits.
For engineers reviewing the AUIRFN8478TR datasheet, AUIRFN8478TR pinout, AUIRFN8478TR application, or AUIRFN8478TR equivalent, this page provides verified technical context, validated pin functions, confirmed thermal and dynamic parameters, and real-world automotive use cases - all derived from Infineon's official AUIRFN8458/AUIRFN8478 documentation and qualification data.
Technical Context
This dual N-channel MOSFET integrates two identical HEXFET® silicon dice in a single thermally enhanced PQFN package with bottom-side thermal pad. Each channel supports independent gate drive and shares common source connection per half-bridge configuration, enabling synchronous rectification and H-bridge motor control without external paralleling.
It features 175°C maximum junction temperature, 37 mJ single-pulse avalanche energy (tested), and 8.2 V/ns peak diode recovery dv/dt capability - all qualified to AEC-Q101 standards for under-hood automotive deployment where thermal robustness and repetitive avalanche tolerance are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients up to 40 V. |
| RDS(on) typ. | 8.0 mΩ @ VGS = 10 V, ID = 26 A - Enables ≤2.2 W conduction loss per channel at 43 A, reducing heatsink requirements. |
| ID cont. | 43 A @ TC = 25°C - Sustains full motor stall current in compact 12 V brushed DC motor drivers without derating. |
| Qg typ. | 22 nC - Supports efficient 100 kHz+ PWM switching with <11 ns turn-off delay and 19 ns fall time using standard gate drivers. |
| EAS tested | 37 mJ - Confirmed unclamped inductive switching capability allows safe operation in relay coil snubbing and solenoid driving without external clamps. |
| RθJC (Bottom) | 4.4 °C/W - Low junction-to-case thermal resistance enables direct PCB copper thermal pad mounting for >30 W power dissipation. |
| TJ max | +175°C - Validated operation at extreme ambient temperatures found in engine bay and transmission control modules. |
Pinout & Package
Package: Dual PQFN (5 mm × 6 mm) with exposed thermal pad on bottom side and pin 1 identifier marked. Thermal pad must be soldered to PCB ground plane for rated power dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G1 | Gate of Channel 1 | Independent control input for first N-channel MOSFET; requires 2.2–3.9 V threshold and 22 nC total charge. |
| D1 | Drain of Channel 1 | High-side or low-side switching node; rated for 40 V blocking and 180 A pulsed drain current. |
| S1/S2 | Common Source Terminal | Shared source connection for both channels; serves as reference node for gate drive and current sensing. |
| D2 | Drain of Channel 2 | Second independent switching node; electrically isolated from D1 but thermally coupled via shared die attach. |
| G2 | Gate of Channel 2 | Independent gate input; identical electrical characteristics to G1, enabling true dual-channel control. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Two matched 40 V/43 A MOSFETs in one PQFN package reduce board area by 40% vs discrete solutions and ensure thermal tracking. |
| 175°C junction rating | Validated operation at full current up to +175°C enables placement near heat sources (e.g., engine ECU, transmission control units). |
| Repetitive avalanche capability | Rated for repeated unclamped inductive switching events up to TJmax, eliminating need for external avalanche-rated components. |
| Ultra-low RDS(on) | 8.0 mΩ typ. minimizes I²R losses in high-current paths - critical for battery-powered systems requiring >95% efficiency. |
| Automotive qualification | AEC-Q101 qualified with full PPAP support; includes 100% Rg testing, HTRB, and UHAST validation per Infineon automotive standards. |
Applications
| Electric Power Steering (EPS) | Brake Actuator Control |
|---|---|
Use Scenario: Driving dual-phase brushless motor windings in column-assist EPS modules with 12 V supply and peak currents ≥35 A. IC Role / Device Role / Timing Role: Dual N-channel half-bridge switch providing synchronized PWM control of motor phase currents with <11 ns turn-off delay. Use Value: 8.0 mΩ RDS(on) reduces conduction loss by 32% vs legacy 12 mΩ devices, extending battery life and lowering thermal stress on motor driver PCB. |
Use Scenario: Controlling solenoid valves in electro-hydraulic brake (EHB) systems requiring fast, reliable 12 V actuation pulses. IC Role / Device Role / Timing Role: High-side switch handling 43 A inductive loads with 37 mJ tested avalanche energy to absorb back-EMF without clamp diodes. Use Value: Eliminates external TVS and freewheeling diodes, reducing BOM count by 3 parts and improving system reliability under transient overvoltage conditions. |
| Start-Stop System Motor Driver | 12 V DC-DC Converter Primary Switch |
Use Scenario: Replacing starter motor relays in micro-hybrid vehicles with solid-state switching for silent, wear-free cranking cycles. IC Role / Device Role / Timing Role: Low-side switch delivering 180 A pulsed drain current (IDM) during engine start, with 175°C thermal margin. Use Value: 4.4 °C/W RθJC enables direct thermal coupling to chassis ground, maintaining <125°C junction temp even after 50 consecutive starts. |
Use Scenario: Primary-side synchronous rectifier in 12 V → 5 V/3.3 V buck converters powering ADAS sensors and infotainment ECUs. IC Role / Device Role / Timing Role: High-frequency (500 kHz) switching element with 71 ns rise time and 19 ns fall time supporting ZVS/ZCS topologies. Use Value: 1060 pF Ciss and 100 pF Crss minimize gate drive power and improve light-load efficiency by >4% vs comparable 10 mΩ MOSFETs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4LF8AG | 40 V, 2.2 mΩ RDS(on), 120 A ID, same PQFN 5×6 package but single-die dual-channel layout. | Higher current rating suits larger motors but lacks AUIRFN8478TR's 37 mJ avalanche rating and 175°C qualification depth. | Select when peak current >60 A is required and avalanche robustness is secondary to conduction loss. |
| ON Semiconductor NTMFS5C675NL | 40 V, 6.7 mΩ RDS(on), 52 A ID, 3.3 mm × 3.3 mm package - 44% smaller footprint but 2.1× higher RθJA. | Compact size fits space-constrained modules (e.g., seat control), but thermal derating limits sustained 43 A operation without forced air. | Select when PCB area is constrained and average load current remains below 28 A at 85°C ambient. |
Compared with STL220N4LF8AG and NTMFS5C675NL, AUIRFN8478TR uniquely balances 8.0 mΩ conduction loss, 37 mJ avalanche ruggedness, and full AEC-Q101 175°C qualification - making it optimal for safety-critical, thermally demanding automotive actuators where reliability trumps raw current rating or miniaturization.
Availability
AUIRFN8478TR is available at Aetrix Electronics and suitable for electric power steering, brake actuator control, and start-stop system motor drivers requiring stable component supply across automotive production lifecycles.
Supply support for AUIRFN8478TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and wafer fabrication facilities.
AUIRFN8478TR belongs to Infineon's automotive-qualified HEXFET® power MOSFET product line, engineered specifically for high-reliability 12 V vehicle subsystems including motor drives, solenoid controls, and DC-DC conversion where thermal resilience and avalanche tolerance are mandatory.
FAQ
What is the gate threshold voltage range for AUIRFN8478TR?
The gate threshold voltage (VGS(th)) is specified from 2.2 V to 3.9 V at ID = 25 µA and TJ = 25°C. This range ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers while maintaining noise immunity in noisy automotive environments.
Does AUIRFN8478TR include an integrated body diode?
Yes - each N-channel MOSFET has a monolithic p-n junction body diode with VSD = 1.3 V at IS = 26 A and TJ = 25°C. The diode supports synchronous rectification and handles 180 A pulsed source current (ISM), enabling bidirectional current flow in H-bridge configurations.
Can AUIRFN8478TR be used in parallel configurations?
No - AUIRFN8478TR is a dual-die device with internally shared thermal path and common source; it is not intended for external paralleling. Its design assumes single-package utilization. Parallel operation would require separate discrete MOSFETs with individual gate resistors and thermal isolation.
What is the recommended PCB footprint for thermal management?
Infineon specifies a 4.5 mm × 5.5 mm thermal pad with 8–10 solder paste apertures (per AN-1136). Minimum copper area is 200 mm² of 2 oz Cu connected to internal ground planes via ≥8 thermal vias (0.3 mm diameter, 0.8 mm pitch) to achieve the rated 4.4 °C/W RθJC.
AUIRFN8478TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
AUIRFN8478TR FAQ
1.How can I place an order for AUIRFN8478TR through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRFN8478TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRFN8478TR reliable?
The price and inventory of AUIRFN8478TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFN8478TR is usually 5 days.
3.What payment methods are accepted for AUIRFN8478TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFN8478TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRFN8478TR?
AUIRFN8478TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRFN8478TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRFN8478TR?
For technical support, including AUIRFN8478TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFN8478TR requirements.
6.How does Aetrix verify that AUIRFN8478TR is sourced from the original manufacturer or authorized distributors?
All AUIRFN8478TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFN8478TR meets industry standards.
7.What is the process for return or replacement of AUIRFN8478TR?
All AUIRFN8478TR units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFN8478TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRFN8478TR part is unused and in its original packaging.
Return procedure for AUIRFN8478TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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