Infineon Technologies AUIRFP2602

Overview

AUIRFP2602 from Infineon is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in TO-247AC package, rated for 24V V(BR)DSS, 1.25mΩ typ. RDS(on) at VGS = 10V and ID = 180A, with 175°C maximum junction temperature and repetitive avalanche capability up to TJmax - deployed in high-current DC motor drives and battery disconnect circuits.

For engineers reviewing the AUIRFP2602 datasheet, AUIRFP2602 pinout, AUIRFP2602 application, or AUIRFP2602 equivalent, key selection criteria include silicon-limited 380A continuous drain current at TC = 25°C, package-limited 180A rating, 260–390nC total gate charge, 1.3V body diode forward voltage at 180A, and AEC-Q101 qualification for under-hood power switching.

Technical Context

This MOSFET employs advanced silicon processing to achieve ultra-low on-resistance per die area while maintaining robust thermal performance. Its 0.40°C/W junction-to-case thermal resistance and 2.5W/°C linear derating factor enable high-power operation with active heatsinking.

The device supports fast switching (td(on) = 70ns, tr = 490ns, tf = 270ns) and features a tested single-pulse avalanche energy of 1011mJ, with repetitive avalanche validated across pulse widths from 1µs to 100ms and starting junction temperatures up to 150°C.

Key Specifications

Pinout & Package

TO-247AC package with isolated metal tab (drain-connected), standard three-terminal layout optimized for high-current PCB mounting and heatsink coupling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Compared with STL220N4L10AG and IXFH320N20X3, AUIRFP2602 uniquely balances 24V system compatibility, 1011mJ tested avalanche energy, and 180A package-limited current - making it optimal for cost-sensitive, thermally constrained 12V/24V automotive switches where voltage margin and switching speed are tightly coupled.

Availability

AUIRFP2602 is available at Aetrix Electronics and suitable for engine start-stop systems, battery disconnect switches, electric power steering motor drivers, and 48V mild hybrid DC-DC converters requiring stable component supply and AEC-Q101-compliant sourcing.

Supply support for AUIRFP2602 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

AUIRFP2602 belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine bay and chassis-mounted power electronics.

FAQ

What is the maximum continuous drain current for AUIRFP2602 at 100°C case temperature?

At TC = 100°C, the silicon-limited continuous drain current is 270A (VGS = 10V), while the package-limited rating remains 180A. The actual usable current is governed by thermal design: with RθJC = 0.40°C/W and max TJ = 175°C, sustained 180A requires TC ≤ 103°C. Derating curves in Figure 10 confirm 180A is valid up to TC = 125°C under pulsed conditions.

Is AUIRFP2602 suitable for synchronous rectification in a 12V DC-DC converter?

Yes - its 1.3V body diode forward voltage at 180A and 55ns reverse recovery time (trr) meet requirements for high-frequency synchronous rectification. However, external gate control is mandatory: the MOSFET lacks integrated driver circuitry, so a dedicated gate driver (e.g., IR2110) must provide precise timing to avoid shoot-through during dead-time transitions.

Does AUIRFP2602 support paralleling for higher current capacity?

Yes, but with strict layout constraints: matched gate drive impedance (<2.5Ω per device), symmetrical PCB trace lengths (<1mm mismatch), and shared heatsink mounting to ensure thermal balance. The positive RDS(on) temperature coefficient (0.02V/°C) provides inherent current sharing, verified in Figure 6 - however, gate charge mismatch (>10% variation) can cause imbalance above 300A aggregate current.

What is the significance of the "j" suffix in the datasheet's ID ratings (e.g., 380j A)?

The "j" denotes current values calculated based on maximum allowable junction temperature (175°C) and thermal resistance, not measured test limits. For example, 380j A means the silicon die can sustain 380A continuously only if case temperature is held at 25°C and junction-to-case thermal resistance remains at 0.40°C/W - a theoretical limit requiring ideal heatsinking, not a guaranteed production specification.