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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFP4310Z

Name: AUIRFP4310Z
Brand: Infineon Technologies
SKU: AUIRFP4310Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFP4310Z

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: AUIRFP4310Z.pdf

Description:: MOSFET N-CH 100V 128A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRFP4310Z from Infineon is an automotive-grade N-channel enhancement-mode Power MOSFET in TO-247AC package, rated for 100V V_DSS, 4.8 mΩ typ. R_DS(on) at V_GS = 10 V, 120 A continuous drain current (package-limited), and 175°C maximum junction temperature. It serves as a high-efficiency main switch in DC-DC converters, motor control inverters, and battery disconnect circuits in 12 V/24 V automotive power systems.

For engineers reviewing the AUIRFP4310Z datasheet, AUIRFP4310Z pinout, AUIRFP4310Z application, or AUIRFP4310Z equivalent, key selection criteria include its ultra-low on-resistance, robust repetitive avalanche capability (E_AS = 355 mJ), fast switching (t_r = 81 ns, t_f = 83 ns), and automotive qualification per AEC-Q101.

Technical Context

This HEXFET® device employs advanced silicon processing to minimize conduction losses while maintaining high dv/dt immunity (17 V/ns) and thermal stability across -55°C to +175°C operation. Its body diode exhibits low V_SD = 1.3 V at 77 A and fast recovery (t_rr = 49 ns at T_J = 25°C), enabling efficient synchronous rectification and freewheeling in hard-switched topologies.

The gate structure delivers low total gate charge (Q_g = 125–188 nC) and moderate gate resistance (R_G = 0.7 Ω), supporting high-frequency PWM control up to several hundred kHz with minimal driver loss. Thermal design is enabled by R_θJC = 0.54°C/W, allowing direct heatsink mounting without thermal interface material degradation concerns.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands up to 100 V drain-source blocking voltage before avalanche onset.
R_DS(on) typ.	4.8 mΩ @ V_GS = 10 V, I_D = 77 A - Enables <1 W conduction loss at 100 A, critical for high-current automotive loads.
I_D (package)	120 A @ T_C = 25°C - Maximum continuous current limited by leadframe thermal capacity, not silicon.
E_AS	355 mJ - Single-pulse avalanche energy rating ensures robustness against inductive turn-off transients in motor drives.
t_r/t_f	81 ns / 83 ns - Fast switching edges reduce switching losses and EMI generation in 100–500 kHz SMPS designs.
Q_g	125–188 nC - Defines gate driver current requirement; enables use with standard 2 A peak drivers at ≤300 kHz.
R_θJC	0.54°C/W - Allows precise junction temperature estimation from case temperature measurement during thermal validation.

Pinout & Package

TO-247AC package: isolated metal tab (Drain), three leads - Gate (left), Drain (center tab), Source (right), with standardized mechanical outline optimized for bolt-down heatsinking. Not suitable for surface-mount assembly.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input	Receives 10 V logic-level signal to fully enhance channel; threshold V_GS(th) = 2.0–4.0 V ensures reliable turn-on with automotive 12 V supply.
Drain (D)	High-side power output	Connected to load/high-voltage rail; electrically tied to metal tab for low-inductance heatsink coupling and thermal path.
Source (S)	Power return reference	Serves as common return for gate drive and load current; must be routed with low inductance to minimize switching oscillation.

Key Features

Feature	Design Value
Automotive qualification	AEC-Q101 qualified for under-hood applications with guaranteed operation from -55°C to +175°C junction temperature.
Ultra-low R_DS(on)	4.8 mΩ typ. reduces conduction loss by >30% vs. legacy 100 V MOSFETs, directly improving system efficiency in 12 V starter-generator systems.
Repetitive avalanche rating	Rated for unlimited repetitive avalanche events up to T_Jmax, eliminating need for external snubbers in brushed DC motor commutation.
Fast body diode	t_rr = 49 ns and Q_rr = 102 nC enable clean freewheeling in half-bridge configurations without cross-conduction risk.
Dynamic dv/dt immunity	17 V/ns rating prevents false turn-on during high-slew-rate transients in noisy automotive environments.

Applications

Engine Start-Stop System

Electric Power Steering (EPS)

Use Scenario: High-current battery isolation and load switching during engine cranking and restart cycles.

IC Role / Device Role / Timing Role: Main power switch controlling 12 V battery connection to starter motor and auxiliary loads.

Use Value: 120 A package rating and 355 mJ avalanche energy ensure survival of repeated cranking surges without derating.

Use Scenario: Inverter stage driving three-phase brushless DC motor in steering assist module.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 60–100 kHz PWM inverter bridge.

Use Value: 4.8 mΩ R_DS(on) and 81 ns rise time minimize heat generation and torque ripple at full assist load.

48 V Mild Hybrid DC-DC Converter

Commercial Vehicle Battery Management

Use Scenario: Primary switch in bidirectional buck-boost converter interfacing 12 V and 48 V domains.

IC Role / Device Role / Timing Role: Synchronous rectifier and main switch operating in hard-switched ZVS-capable topology.

Use Value: Low Q_g (125 nC) and fast t_f (83 ns) support high-frequency operation while maintaining ZVS margin.

Use Scenario: Solid-state contactor replacement in 24 V truck/trailer battery disconnect units.

IC Role / Device Role / Timing Role: High-reliability power switch replacing electromechanical relays in safety-critical isolation paths.

Use Value: AEC-Q101 qualification and 175°C rating guarantee uninterrupted operation in hot under-hood environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	100 V, 2.2 mΩ typ., TO-247 long leads; lower R_DS(on) but higher Q_g (220 nC).	Better conduction loss at <80 A; less suitable for >300 kHz due to gate charge.	Select when thermal budget dominates over switching frequency constraints.
IXTH120N10L2	100 V, 5.2 mΩ typ., TO-247; higher R_DS(on) but superior SOA and lower C_oss.	More robust under unclamped inductive switching; preferred for high-energy motor fault conditions.	Select when avalanche ruggedness and safe operating area outweigh on-resistance priority.

Compared with STL220N10F7 and IXTH120N10L2, AUIRFP4310Z offers optimal balance of low R_DS(on), moderate Q_g, and proven automotive reliability-making it ideal for cost-sensitive, thermally constrained 12 V/24 V power stages where both efficiency and transient robustness matter.

Availability

AUIRFP4310Z is available at Aetrix Electronics and suitable for engine start-stop systems, electric power steering modules, and 48 V mild hybrid DC-DC converters requiring stable component supply and automotive-grade traceability.

Supply support for AUIRFP4310Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The AUIRFP4310Z belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, designed specifically for high-reliability, high-current switching in demanding under-hood and chassis-mounted automotive power systems.

FAQ

What is the maximum continuous drain current rating for AUIRFP4310Z?

The AUIRFP4310Z has two current ratings: 128 A silicon-limited and 120 A package-limited at T_C = 25°C. The practical continuous rating is 120 A, determined by leadframe thermal capacity and bond wire limits-not silicon capability. Derating is required above 25°C case temperature per the linear derating factor of 1.9 W/°C.

Is AUIRFP4310Z suitable for synchronous rectification?

Yes-its body diode features low forward voltage (V_SD = 1.3 V at 77 A) and fast recovery (t_rr = 49 ns at 25°C), making it viable for synchronous rectification in high-frequency DC-DC converters. However, external Schottky diodes may still be preferred in ultra-low-voltage (<3.3 V) outputs due to inherent V_SD limitation.

Does AUIRFP4310Z require a gate resistor for automotive applications?

A gate resistor (typically 2.7 Ω) is recommended to dampen ringing and control dI/dt during switching, especially in high-noise automotive harness environments. The device's 0.7 Ω intrinsic gate resistance alone is insufficient to suppress oscillations caused by PCB trace inductance and driver output impedance mismatch.

How does the 175°C junction rating impact thermal design?

The 175°C maximum junction temperature allows operation in high-ambient under-hood locations (e.g., >105°C ambient) while maintaining >70°C thermal margin. Combined with R_θJC = 0.54°C/W, this enables accurate junction temperature prediction using case temperature measurements-critical for functional safety compliance in ASIL-B/C systems.

AUIRFP4310Z Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 128A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 77A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 188 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7120 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 278W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

AUIRFP4310Z FAQ

1.How can I place an order for AUIRFP4310Z through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFP4310Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFP4310Z reliable?

The price and inventory of AUIRFP4310Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFP4310Z is usually 5 days.

3.What payment methods are accepted for AUIRFP4310Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFP4310Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFP4310Z?

AUIRFP4310Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFP4310Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFP4310Z?

For technical support, including AUIRFP4310Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFP4310Z requirements.

6.How does Aetrix verify that AUIRFP4310Z is sourced from the original manufacturer or authorized distributors?

All AUIRFP4310Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFP4310Z meets industry standards.

7.What is the process for return or replacement of AUIRFP4310Z?

All AUIRFP4310Z units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFP4310Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFP4310Z part is unused and in its original packaging.

Return procedure for AUIRFP4310Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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