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Infineon Technologies AUIRFR1018E

Part No.:
AUIRFR1018E
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixAUIRFR1018E.pdf
Description:
MOSFET N-CH 60V 56A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,078

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Product details

Overview

AUIRFR1018E from Infineon is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252AA) package, designed for high-efficiency DC-DC conversion and motor control in engine management and body electronics. It delivers 7.1 mΩ typical RDS(on) at VGS = 10 V, 60 V VDSS, 79 A silicon-limited continuous drain current at TC = 25°C, and operates up to +175°C junction temperature.

For engineers reviewing the AUIRFR1018E datasheet, AUIRFR1018E pinout, AUIRFR1018E application, or AUIRFR1018E equivalent, this page provides verified electrical parameters, thermal performance data, gate charge characteristics, avalanche capability, and automotive qualification context essential for power stage design validation and BOM selection.

Technical Context

This MOSFET employs advanced trench-gate process technology to minimize conduction loss while maintaining robust switching behavior. Its low 7.1 mΩ RDS(on) and 46 nC total gate charge enable high-frequency operation with reduced switching losses in synchronous buck converters and H-bridge drivers.

The device supports unclamped inductive switching with 11 mJ repetitive avalanche energy and 88 mJ single-pulse rating, validated under automotive thermal stress conditions. Its 21 V/ns diode recovery dv/dt and 26 ns reverse recovery time ensure stable commutation in inductive loads without external snubbers.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60 V - Maximum blocking voltage for 12 V/24 V automotive battery systems with transient margin.
RDS(on) typ. 7.1 mΩ @ VGS = 10 V, ID = 47 A - Enables ≤0.2 W conduction loss at 50 A, critical for thermally constrained ECUs.
ID (Silicon Limited) 79 A @ TC = 25°C - Sustains peak load currents in starter relays and fuel pump drivers without derating.
EAS 88 mJ - Single-pulse avalanche energy allows safe operation during load dump or inductive kickback events.
TJ max +175°C - Meets AEC-Q101 Grade 0 requirements for under-hood applications including turbocharger actuators.
Qg 46 nC typ. - Supports 200–500 kHz PWM switching in compact DC-DC modules with minimal gate drive power.
trr / Qrr 26 ns / 24 nC @ TJ = 25°C - Reduces body diode conduction loss and EMI in synchronous rectification topologies.

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for enhanced thermal dissipation; standard footprint compatible with IPC-7351B guidelines and FR-4 PCB mounting.

Pin/Terminal Circuit Role Design Meaning
Drain (D) Main current path output terminal Connected to exposed copper pad on bottom of package; primary thermal path to PCB heatsink.
Gate (G) Control input for channel modulation High-impedance node requiring <10 Ω series resistance to suppress ringing; sensitive to ESD.
Source (S) Reference node for gate drive and current sensing Common return for load current and gate driver ground; used for low-side current monitoring.

Key Features

Feature Design Value
Ultra-low RDS(on) 7.1 mΩ enables ≥95% efficiency in 12 V input buck converters delivering 40 A at 5 V output.
175°C operating junction temperature Eliminates need for external thermal derating in engine bay modules operating at ambient >105°C.
Repetitive avalanche rated 11 mJ per pulse allows reliable operation in unregulated inductive switching without snubber networks.
Fast diode recovery 26 ns trr and 21 V/ns dv/dt support zero-voltage switching (ZVS) in resonant LLC topologies.
Automotive qualification AEC-Q101 qualified with full traceability, PPAP documentation, and lot-level reliability test reports.

Applications

Engine Control Unit (ECU) Power Stage Fuel Pump Driver Module

Use Scenario: High-side switch controlling solenoid valves and ignition coils in gasoline direct injection systems.

IC Role / Device Role / Timing Role: Power switch managing 10–50 A pulsed loads with 10–100 ms duty cycles and fast turn-off for precise fuel metering.

Use Value: 7.1 mΩ RDS(on) reduces thermal stress during extended cranking; 175°C rating ensures reliability at under-hood temperatures up to 150°C.

Use Scenario: Low-side driver for brushless DC fuel pumps in modern GDI and diesel common-rail systems.

IC Role / Device Role / Timing Role: PWM-controlled power switch operating at 20–100 kHz to regulate flow rate and pressure across wide load ranges.

Use Value: 46 nC Qg minimizes gate drive loss; 26 ns trr prevents shoot-through during high-frequency commutation.

Electric Power Steering (EPS) Motor Phase Switch Body Control Module (BCM) Load Driver

Use Scenario: Half-bridge leg in three-phase inverter driving 300–500 W EPS assist motors.

IC Role / Device Role / Timing Role: Synchronous rectifier and active clamp switch handling bidirectional current with <500 ns dead-time constraints.

Use Value: 21 V/ns diode dv/dt tolerance avoids false triggering during phase reversal; 11 mJ EAR sustains repeated regenerative braking pulses.

Use Scenario: High-current switch for HVAC blower motors, headlight leveling actuators, and seat position memory systems.

IC Role / Device Role / Timing Role: Robust load driver supporting 5–20 A resistive/inductive loads with integrated overtemperature protection.

Use Value: 88 mJ EAS absorbs inductive kickback from 24 V solenoids; RoHS-compliant lead-free finish meets automotive end-of-life requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N6F7 60 V, 2.2 mΩ RDS(on), 220 A ID, PowerFLAT 5x6 package Higher current capacity but larger footprint; requires different PCB layout and thermal pad design Select when higher peak current (>100 A) and lower RDS(on) are prioritized over board space and legacy compatibility.
IRF1018ELPbF 60 V, 7.5 mΩ RDS(on), same D-Pak package, non-automotive grade Lacks AEC-Q101 qualification; not approved for safety-critical vehicle systems Acceptable only for non-automotive industrial prototypes where qualification is not required.

Compared with STL220N6F7 and IRF1018ELPbF, AUIRFR1018E uniquely balances automotive qualification, D-Pak footprint compatibility, and 7.1 mΩ conduction loss-making it optimal for cost-sensitive, space-constrained ECU and BCM designs requiring production-grade reliability.

Availability

AUIRFR1018E is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and body control modules requiring stable component supply across multi-year automotive production programs.

Supply support for AUIRFR1018E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

AUIRFR1018E belongs to the HEXFET® automotive power MOSFET product line, engineered specifically for high-reliability 12 V/24 V vehicle subsystems demanding AEC-Q101 compliance, thermal resilience, and robust avalanche performance.

FAQ

What is the maximum allowable case temperature for continuous operation?

The absolute maximum case temperature is not specified directly, but continuous operation is limited by junction temperature. With RθJC = 1.32°C/W and TJmax = 175°C, sustained case temperatures above ~150°C require derated current to maintain thermal margin. At TC = 100°C, silicon-limited ID drops to 56 A per datasheet Figure 9.

Is AUIRFR1018E suitable for synchronous rectification in DC-DC converters?

Yes-its 26 ns reverse recovery time, 21 V/ns diode dv/dt rating, and low Qrr (24 nC) make it suitable for secondary-side synchronous rectification in 12 V input buck converters up to 500 kHz. Gate drive must be precisely timed to avoid shoot-through due to body diode conduction delay.

Does AUIRFR1018E require a gate resistor for stability?

Yes-a 5–10 Ω series gate resistor is recommended to dampen parasitic oscillation caused by trace inductance and internal gate resistance (0.73 Ω). This improves EMI performance and prevents unintended turn-on during fast dv/dt transients in high-noise automotive environments.

How does its avalanche rating compare to standard industrial MOSFETs?

AUIRFR1018E is rated for 11 mJ repetitive avalanche energy-significantly higher than most industrial MOSFETs of similar voltage class, which typically specify only single-pulse ratings. This reflects its AEC-Q101 qualification for unclamped inductive switching in automotive actuators without external protection.

AUIRFR1018E Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
56A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
8.4mOhm @ 47A, 10V
Vgs(th) (Max) @ Id:
4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
69 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2290 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
110W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

AUIRFR1018E FAQ

1.How can I place an order for AUIRFR1018E through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFR1018E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFR1018E reliable?

The price and inventory of AUIRFR1018E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFR1018E is usually 5 days.

3.What payment methods are accepted for AUIRFR1018E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFR1018E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFR1018E?

AUIRFR1018E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFR1018E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFR1018E?

For technical support, including AUIRFR1018E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFR1018E requirements.

6.How does Aetrix verify that AUIRFR1018E is sourced from the original manufacturer or authorized distributors?

All AUIRFR1018E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFR1018E meets industry standards.

7.What is the process for return or replacement of AUIRFR1018E?

All AUIRFR1018E units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFR1018E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFR1018E part is unused and in its original packaging.

Return procedure for AUIRFR1018E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AUIRFR1018E Tags

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