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Infineon Technologies AUIRFR120ZTRL

Part No.:
AUIRFR120ZTRL
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixAUIRFR120ZTRL.pdf
Description:
MOSFET N-CH 100V 8.7A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,359

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Product details

Overview

AUIRFR120ZTRL from Infineon is an automotive-grade N-channel D-Pak Power MOSFET with 100 V VDS, 150 mΩ typical RDS(on) at VGS = 10 V, 8.7 A continuous drain current at TC = 25°C, and 175°C maximum junction temperature-designed for high-reliability engine control, transmission solenoid drivers, and body electronics switching.

For engineers reviewing the AUIRFR120ZTRL datasheet, AUIRFR120ZTRL pinout, AUIRFR120ZTRL application, or AUIRFR120ZTRL equivalent, key selection criteria include its rated repetitive avalanche energy (20 mJ tested), fast switching (tr = 26 ns, tf = 23 ns), low gate charge (Qg = 6.9 nC), and automotive qualification per AEC-Q101.

Technical Context

This MOSFET employs Infineon's HEXFET® process to achieve ultra-low on-resistance per die area while maintaining robust thermal performance. Its 175°C operating junction temperature and validated repetitive avalanche capability (up to IAR = 12 A, EAR = 20 mJ at 1% duty cycle) support sustained operation in under-hood environments.

The device features a fast intrinsic body diode (trr = 24–36 ns, Qrr = 23–35 nC) and low output capacitance (Coss = 41 pF at VDS = 25 V), enabling efficient hard-switching in DC-DC converters and motor drive half-bridges without external snubbers.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 100 V - Withstands automotive load-dump transients up to ISO 7637-2 Pulse 5a (120 V peak) with margin.
RDS(on) typ. 150 mΩ at VGS = 10 V, ID = 5.2 A - Enables <1.3 W conduction loss at 8.7 A, reducing heatsink requirements.
ID cont. 8.7 A at TC = 25°C - Supports high-current solenoid and lamp loads in 12 V systems without derating.
EAS tested 20 mJ - 100% production-tested single-pulse avalanche energy ensures robustness against inductive turn-off spikes.
Qg 6.9 nC - Low gate drive power enables direct MCU GPIO driving or minimal gate driver sizing.
tr/tf 26 ns / 23 ns - Reduces switching losses below 100 kHz, suitable for PWM-controlled HVAC actuators.
TJ max +175°C - Certified for under-hood placement in engine management modules per AEC-Q101.

Pinout & Package

Package: D-Pak (TO-252AA), surface-mount, thermally enhanced with exposed drain pad.

Pin/Terminal Circuit Role Design Meaning
G (Gate) Control input Receives 10 V logic-level signal; threshold voltage 2.0–4.0 V ensures compatibility with 3.3 V/5 V microcontrollers.
D (Drain) High-side or low-side power path Internally connected to exposed metal pad; must be soldered to PCB copper pour for thermal conduction (RθJC = 4.28°C/W).
S (Source) Reference node / return path Provides common reference for gate drive and current sensing; internal source inductance (LS = 7.5 nH) impacts di/dt-induced ringing.

Key Features

Feature Design Value
Automotive qualification AEC-Q101 qualified - Validated for temperature cycling, humidity, and mechanical shock per automotive reliability standards.
Repetitive avalanche rating Tested to 20 mJ single-pulse and rated for repetitive operation - Eliminates need for external clamping in inductive load circuits.
Ultra-low RDS(on) 150 mΩ typ. - Reduces I²R losses by >30% vs. legacy 200 mΩ automotive MOSFETs at same current.
Fast body diode trr = 24 ns, Qrr = 23 nC - Minimizes reverse recovery loss in synchronous rectification and freewheeling paths.
Thermal robustness RθJA = 50°C/W (PCB mounted) - Enables operation at full current with only 2 oz copper and 1"² thermal pad.

Applications

Engine Control Unit (ECU) Solenoid Driver Transmission Control Module (TCM) Valve Actuator

Use Scenario: Driving 12 V, 2–5 A fuel injector or idle air control valve in gasoline direct injection systems.

IC Role / Device Role / Timing Role: High-side switch controlling pulsed coil current with 1–10 ms ON time and 10–20 kHz PWM modulation.

Use Value: 175°C rating prevents thermal shutdown during extended idling; 20 mJ avalanche rating absorbs back-EMF without snubber.

Use Scenario: Controlling hydraulic pressure valves in 8-speed automatic transmissions requiring precise 5–15 A current pulses.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration with bidirectional current flow and fast polarity reversal.

Use Value: Low Qg (6.9 nC) enables <1 µs dead-time control; fast tr/tf minimizes shoot-through risk.

Body Control Module (BCM) Lamp Load Switch Electric Power Steering (EPS) Motor Phase Driver

Use Scenario: Switching halogen headlamps (55 W, ~4.6 A) and fog lamps in centralized lighting control units.

IC Role / Device Role / Timing Role: Single-ended low-side switch with PWM dimming and short-circuit protection feedback via sense-FET.

Use Value: RDS(on) = 150 mΩ limits self-heating to <3.2 W at full load, avoiding thermal derating in sealed enclosures.

Use Scenario: Half-bridge phase leg in 12 V EPS assist motors delivering up to 30 A peak current per phase.

IC Role / Device Role / Timing Role: High-efficiency power stage switch with integrated body diode conducting freewheeling current during PWM off-time.

Use Value: Low Coss (41 pF) and fast tf (23 ns) reduce switching loss to <150 mW at 20 kHz, improving system efficiency by 1.2%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL105N10F7 100 V, RDS(on) = 11.5 mΩ (typ.), DFN5x6 package, 120 A pulsed ID Higher current density but requires multilayer PCB for thermal management; no AEC-Q101 documentation publicly available Select when board space is constrained and peak current exceeds 10 A; verify qualification status with ST.
ON Semiconductor NTMFS5C670NL 100 V, RDS(on) = 12.5 mΩ (typ.), SO-8FL package, 175°C TJ, AEC-Q101 qualified Lower RDS(on) but 50% higher Qg (10.5 nC); smaller footprint limits thermal dissipation to 2.5 W Prefer for compact, low-loss designs where average power <2.5 W; avoid for sustained 8.7 A operation.

Compared with STL105N10F7 and NTMFS5C670NL, AUIRFR120ZTRL offers balanced trade-offs: verified AEC-Q101 compliance, proven 20 mJ avalanche robustness, and D-Pak thermal performance ideal for mid-power (3–8 A) automotive loads without complex layout.

Availability

AUIRFR120ZTRL is available at Aetrix Electronics and suitable for engine control units, transmission control modules, and body control modules requiring stable component supply across automotive production lifecycles.

Supply support for AUIRFR120ZTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

AUIRFR120ZTRL belongs to the HEXFET® Automotive Power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine, transmission, and chassis control systems.

FAQ

Is AUIRFR120ZTRL pin-compatible with AUIRFU120Z?

No. AUIRFR120ZTRL uses the D-Pak (TO-252AA) package with Drain–Source–Gate pin order (D-S-G), while AUIRFU120Z uses the I-Pak (TO-251AA) package with Drain–Gate–Source order (D-G-S). Footprint and thermal pad layout differ; PCB redesign is required for substitution.

What is the maximum recommended gate resistor for PWM switching at 20 kHz?

A 10 Ω gate resistor is recommended for 20 kHz operation. This value balances switching speed (tr/tf ≈ 25 ns) and gate drive stability, limiting peak gate current to <1 A while suppressing oscillation from LS and Ciss interaction.

Does AUIRFR120ZTRL require a negative gate voltage for reliable turn-off in noisy automotive environments?

No. The device has a gate threshold voltage range of 2.0–4.0 V and exhibits no unintended turn-on up to VGS = +1 V. A 0 V to 10 V gate drive is sufficient; negative bias is unnecessary unless operating near EMI sources exceeding 50 V/ns dv/dt.

Can AUIRFR120ZTRL replace IRFR120Z in existing industrial designs?

Yes, with qualification. AUIRFR120ZTRL shares identical electrical specs and D-Pak footprint with IRFR120Z but adds AEC-Q101 qualification, 175°C rating, and enhanced avalanche testing. Thermal and layout compatibility is maintained; revalidation of surge immunity and lifetime reliability is advised.

AUIRFR120ZTRL Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
190mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id:
4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:
10 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
310 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
35W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

AUIRFR120ZTRL FAQ

1.How can I place an order for AUIRFR120ZTRL through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFR120ZTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFR120ZTRL reliable?

The price and inventory of AUIRFR120ZTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFR120ZTRL is usually 5 days.

3.What payment methods are accepted for AUIRFR120ZTRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFR120ZTRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFR120ZTRL?

AUIRFR120ZTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFR120ZTRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFR120ZTRL?

For technical support, including AUIRFR120ZTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFR120ZTRL requirements.

6.How does Aetrix verify that AUIRFR120ZTRL is sourced from the original manufacturer or authorized distributors?

All AUIRFR120ZTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFR120ZTRL meets industry standards.

7.What is the process for return or replacement of AUIRFR120ZTRL?

All AUIRFR120ZTRL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFR120ZTRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFR120ZTRL part is unused and in its original packaging.

Return procedure for AUIRFR120ZTRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AUIRFR120ZTRL Tags

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