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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFR2307Z

Name: AUIRFR2307Z
Brand: Infineon Technologies
SKU: AUIRFR2307Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFR2307Z

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: AUIRFR2307Z.pdf

Description:: MOSFET N-CH 75V 42A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRFR2307Z from Infineon is an automotive-grade N-channel D-Pak HEXFET® Power MOSFET with 75 V V_DS, 16 mΩ max R_DS(on) at V_GS = 10 V, and 42 A continuous drain current (package-limited) - designed for high-efficiency DC-DC converters, motor control inverters, and load switching in under-hood automotive systems.

For engineers reviewing the AUIRFR2307Z datasheet, AUIRFR2307Z pinout, AUIRFR2307Z application, or AUIRFR2307Z equivalent, this page delivers verified thermal performance (175°C T_J), repetitive avalanche capability (140 mJ tested EAS), fast switching (t_r = 65 ns), and RoHS-compliant lead-free packaging - all critical for automotive powertrain and body electronics design.

Technical Context

This MOSFET employs Infineon's advanced silicon process to achieve ultra-low on-resistance per die area while maintaining robust unclamped inductive switching performance. Its gate threshold voltage (2.0–4.0 V) enables direct drive from 3.3 V and 5 V microcontrollers, and its 50 nC typical total gate charge supports efficient PWM operation up to 200 kHz.

The device integrates a co-packaged body diode with 31–47 ns reverse recovery time and 31–47 nC Q_rr, enabling synchronous rectification and freewheeling in buck and half-bridge topologies. Thermal resistance R_θJC = 1.42 °C/W allows high-power dissipation when mounted on copper-clad PCBs with thermal vias.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Withstands transient overvoltage spikes common in 12 V/24 V automotive battery systems without breakdown.
R_DS(on) max	16 mΩ @ V_GS = 10 V, I_D = 32 A - Enables <1 W conduction loss at 42 A, reducing heatsink requirements.
I_D (pkg)	42 A @ T_C = 25°C - Sustains high-current loads in engine control units and HVAC blower drivers.
EAS (tested)	140 mJ - Supports reliable unclamped inductive turn-off in solenoid and relay drivers without external snubbers.
T_J max	175°C - Certified for under-hood operation where ambient temperatures exceed 105°C.
Q_g	50 nC typ - Reduces gate driver power demand and enables use with low-current MCU GPIOs via buffer stages.
t_r/t_f	65 ns / 29 ns - Minimizes switching losses in high-frequency DC-DC converters operating above 100 kHz.

Pinout & Package

Package: D-Pak (TO-252AA), surface-mount, single-ended heat sink interface with exposed drain pad for thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path output terminal	Connected to exposed metal tab - must be soldered to large copper pour for thermal management and electrical return.
Gate (G)	Control input	High-impedance MOS gate requiring <50 nC charge; sensitive to ESD - needs series resistor (10–47 Ω) for ringing suppression.
Source (S)	Reference node for gate drive and current sensing	Low-inductance source connection essential for accurate current monitoring and stable gate control in high-di/dt applications.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	12.8 mΩ typ at 10 V gate drive - cuts conduction loss by >30% vs. legacy automotive MOSFETs in 12 V starter relays.
175°C junction rating	Validated operation up to maximum rated temperature - eliminates derating penalties in compact engine bay enclosures.
Repetitive avalanche capability	Rated for repeated unclamped inductive switching up to T_Jmax - removes need for external clamping diodes in motor phase-leg designs.
Fast body diode	t_rr = 31–47 ns, Q_rr = 31–47 nC - reduces cross-conduction loss and EMI in synchronous rectifier configurations.
Automotive qualification	AEC-Q101 qualified - meets stress test requirements for vibration, temperature cycling, and humidity exposure in safety-critical systems.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 40 A and pulse widths down to 1 ms.

IC Role / Device Role / Timing Role: Main power switch in low-side driver configuration, handling inductive kickback during turn-off.

Use Value: 140 mJ tested avalanche energy absorbs stored coil energy without snubber, improving system reliability and reducing BOM count.

Use Scenario: PWM-controlled 24 V blower motor delivering airflow up to 300 CFM in cabin climate systems.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge inverter stage, operating at 10–20 kHz with 42 A continuous current.

Use Value: 16 mΩ R_DS(on) limits conduction loss to ≤28 W at full load, enabling natural convection cooling instead of forced-air fans.

12 V Starter Relay Replacement

Automotive LED Headlamp Dimming Circuit

Use Scenario: Solid-state replacement for electromechanical starter relays in stop-start systems, switching 500 A inrush current.

IC Role / Device Role / Timing Role: High-current load switch activated for <500 ms during cranking, with thermal management via PCB copper.

Use Value: 175°C T_J rating ensures safe operation during repeated cranking cycles even with limited heatsinking in confined spaces.

Use Scenario: Analog dimming of 40 W LED headlamps using linear current regulation in adaptive driving beam (ADB) modules.

IC Role / Device Role / Timing Role: Pass element in constant-current regulator, dissipating up to 8 W continuously at 2 A output.

Use Value: 1.42 °C/W R_θJC enables direct mounting to aluminum housing, achieving <65°C case temperature without additional heatsinks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V V_DS, 0.75 mΩ R_DS(on), 220 A package rating - lower voltage, much lower on-resistance, but not suitable for 75 V transients.	Optimized for 12 V battery rail only; lacks avalanche rating and automotive qualification documentation traceability.	Select only for non-safety-critical 12 V loads with strict conduction-loss budgets and no load-dump exposure.
IRF3205PbF	55 V V_DS, 8 mΩ R_DS(on), 110 A - higher current, lower voltage, no AEC-Q101 certification, 175°C T_J not validated.	Legacy industrial part; not qualified for automotive use - unsuitable for production ECU or body control modules.	Acceptable for prototyping or non-automotive industrial motor drives where qualification is not required.

Compared with STL220N4F7AG and IRF3205PbF, the AUIRFR2307Z uniquely combines 75 V breakdown margin, AEC-Q101 compliance, 140 mJ tested avalanche energy, and 175°C operation - making it the only viable option for production automotive load switches exposed to ISO 7637-2 pulses and extended temperature cycling.

Availability

AUIRFR2307Z is available at Aetrix Electronics and suitable for automotive engine control units, HVAC motor controllers, and LED lighting systems requiring stable component supply across multi-year vehicle production lifecycles.

Supply support for AUIRFR2307Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs - with over 30 years of automotive MOSFET innovation.

The AUIRFR2307Z belongs to Infineon's AUIRFR automotive HEXFET® family, engineered specifically for high-reliability, high-temperature power switching in engine, transmission, and chassis control modules.

FAQ

What is the maximum continuous drain current for AUIRFR2307Z at 100°C case temperature?

The AUIRFR2307Z supports 38 A continuous drain current at T_C = 100°C (silicon-limited), as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced channel mobility and increased R_DS(on) at elevated temperatures - not package limitation. Designers must verify PCB copper area and airflow to sustain this current reliably.

Does AUIRFR2307Z require a gate resistor, and what value is recommended?

Yes - a series gate resistor (10–47 Ω) is recommended to dampen gate-source ringing caused by L_S + L_D (7.5 nH and 4.5 nH respectively) interacting with gate capacitance. Without it, overshoot exceeding ±20 V V_GS rating may occur during fast switching, risking gate oxide damage. Layout minimization of gate loop area remains critical regardless of resistor value.

Can AUIRFR2307Z be used in parallel configurations for higher current handling?

Yes - its positive R_DS(on) temperature coefficient (0.072 V/°C) enables inherent current sharing when paralleled. However, matched gate drive layout (equal trace length/inductance to each device) and symmetrical thermal mounting are mandatory. Derate total current by 15% versus sum of individual ratings to account for thermal coupling and parameter spread.

Is the body diode in AUIRFR2307Z suitable for synchronous rectification in a 12 V buck converter?

Yes - with t_rr = 31–47 ns and Q_rr = 31–47 nC, the integrated body diode supports synchronous rectification up to ~200 kHz in 12 V input buck converters. However, its V_SD = 1.3 V forward drop increases conduction loss versus Schottky alternatives; best practice is to actively drive the complementary high-side switch to minimize body diode conduction time.

AUIRFR2307Z Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 32A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 75 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2190 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

AUIRFR2307Z FAQ

1.How can I place an order for AUIRFR2307Z through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFR2307Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFR2307Z reliable?

The price and inventory of AUIRFR2307Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFR2307Z is usually 5 days.

3.What payment methods are accepted for AUIRFR2307Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFR2307Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFR2307Z?

AUIRFR2307Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFR2307Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFR2307Z?

For technical support, including AUIRFR2307Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFR2307Z requirements.

6.How does Aetrix verify that AUIRFR2307Z is sourced from the original manufacturer or authorized distributors?

All AUIRFR2307Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFR2307Z meets industry standards.

7.What is the process for return or replacement of AUIRFR2307Z?

All AUIRFR2307Z units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFR2307Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFR2307Z part is unused and in its original packaging.

Return procedure for AUIRFR2307Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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