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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFR2405

Name: AUIRFR2405
Brand: Infineon Technologies
SKU: AUIRFR2405
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFR2405

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: AUIRFR2405.pdf

Description:: MOSFET N-CH 55V 30A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:5,028

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Product details

Overview

AUIRFR2405 from Infineon is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252AA) package, rated for 55 V V_DS, 11.8 mΩ R_DS(on) at V_GS = 10 V and 34 A, with 175°C maximum junction temperature and full avalanche rating. It delivers high-current switching in engine control units, DC-DC converters, and motor drivers where ruggedness and thermal stability are critical.

For engineers reviewing the AUIRFR2405 datasheet, AUIRFR2405 pinout, AUIRFR2405 application, or AUIRFR2405 equivalent, key selection factors include its silicon-limited 56 A continuous drain current, 130 mJ single-pulse avalanche energy, dynamic dV/dt rating of 5.0 V/ns, low gate charge (70 nC typ.), and automotive qualification per AEC-Q101.

Technical Context

This device employs Infineon's Stripe Planar HEXFET® architecture to achieve low on-resistance per unit die area while maintaining fast switching (t_r = 130 ns, t_f = 78 ns) and robust unclamped inductive switching capability. Its fully rated repetitive avalanche operation up to T_jmax enables reliable operation in inductive load circuits without external snubbers.

The MOSFET features a body diode with 62 ns reverse recovery time and 170 nC Q_rr, optimized for synchronous rectification and freewheeling in automotive power stages. Thermal design is supported by R_θJC = 1.4 °C/W and R_θJA = 50 °C/W (PCB mount), enabling high-power density layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum drain-to-source blocking voltage; supports 42 V automotive battery systems with margin for load dump transients.
R_DS(on) typ.	11.8 mΩ @ V_GS = 10 V, I_D = 34 A - Enables <1.2 W conduction loss at 34 A, critical for thermally constrained under-hood applications.
I_D (silicon limited)	56 A @ T_C = 25°C - Continuous current capability determined by die thermal limit, not package.
E_AS	130 mJ - Single-pulse avalanche energy; allows safe operation during inductive turn-off without clamping circuitry.
Q_g	70 nC typ. - Total gate charge; determines driver strength requirement and switching loss trade-off in PWM designs.
dV/dt rating	5.0 V/ns - Confirmed diode recovery dv/dt immunity; prevents false turn-on in high-noise engine environments.
T_J max	+175°C - Junction temperature rating aligned with AEC-Q101 Grade 0; supports placement near heat sources.

Pinout & Package

Package: D-Pak (TO-252AA), surface-mount, single-die configuration with exposed drain pad for thermal conduction. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control terminal	Receives 10 V logic-level drive; threshold voltage 2.0–4.0 V ensures compatibility with 3.3 V/5 V microcontrollers via level shifters.
Drain (D)	High-side switch node	Exposed metal tab electrically connected to drain; must be isolated from heatsink unless referenced to same potential.
Source (S)	Return path / reference node	Common return for gate drive and load current; internal source inductance (7.5 nH) affects high-di/dt ringing.

Key Features

Feature	Design Value
Advanced Planar Technology	Enables 11.8 mΩ R_DS(on) in D-Pak footprint-reduces board area vs. larger packages for same current handling.
Full Avalanche Rating	130 mJ E_AS and 11 mJ E_AR allow repeated inductive energy absorption without degradation-eliminates need for external TVS in solenoid drivers.
175°C Operating Temperature	Validated junction temperature range supports direct mounting in engine bay modules without derating below 150°C ambient.
Dynamic dV/dt Immunity	5.0 V/ns rated diode recovery dv/dt prevents spurious turn-on during high-slew-rate transients in starter relays and fuel injectors.
Lead-Free & RoHS Compliant	Meets automotive environmental standards; compatible with Pb-free reflow profiles (peak 260°C, 10 s).

Applications

Engine Control Unit (ECU)

Fuel Injector Driver

Use Scenario: High-speed switching of 12 V solenoid loads in gasoline direct injection systems.

IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil current with precise 1–5 ms pulse width.

Use Value: 11.8 mΩ R_DS(on) minimizes I²R heating during extended duty cycles; 175°C rating ensures reliability at under-hood temperatures up to 125°C ambient.

Use Scenario: Driving peak currents >30 A in sequential port fuel injectors with fast turn-off requirements.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET used in low-side configuration with active freewheeling via body diode.

Use Value: 62 ns t_rr and 170 nC Q_rr reduce switching losses and voltage overshoot during diode commutation.

Automotive DC-DC Converter

Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: Synchronous rectifier in 48 V–12 V buck converter for ADAS domain controllers.

IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode to improve efficiency at 200 kHz switching frequency.

Use Value: Low Q_g (70 nC) and C_oss (470 pF) enable efficient zero-voltage switching (ZVS) operation with minimal gate drive loss.

Use Scenario: Half-bridge phase leg in 3-phase EPS motor driver operating at 10–20 kHz PWM.

IC Role / Device Role / Timing Role: High-current, high-reliability power switch handling 40 A continuous phase current with burst overloads.

Use Value: Fully rated repetitive avalanche (E_AR = 11 mJ) withstands back-EMF spikes during motor stall or sudden deceleration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N5LF6AG	R_DS(on) = 9.5 mΩ @ 10 V but rated only to 150°C T_J; no specified avalanche energy rating.	Lacks AEC-Q101 qualification and avalanche endurance data-unsuitable for safety-critical inductive loads.	Select only for non-automotive, lower-temperature applications where avalanche robustness is not required.
IXTP56N10P	Higher V_DS (100 V), higher R_DS(on) (16 mΩ), TO-220 package-larger footprint and inferior thermal resistance (R_θJC = 1.8 °C/W).	Requires heatsink for same current; slower switching (t_f = 120 ns) increases PWM losses in high-frequency converters.	Prefer only when 100 V rating is mandatory and board space/heatsink allowance permits TO-220 mounting.

Compared with STL130N5LF6AG and IXTP56N10P, the AUIRFR2405 uniquely combines AEC-Q101 qualification, 175°C operation, and documented 130 mJ avalanche capability in a thermally efficient D-Pak-making it the only choice for automotive inductive switching where reliability under transient stress is non-negotiable.

Availability

AUIRFR2405 is available at Aetrix Electronics and suitable for engine control units, fuel injector drivers, and automotive DC-DC converters requiring stable component supply across multi-year vehicle production lifecycles.

Supply support for AUIRFR2405 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

The AUIRFR2405 belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, designed specifically for high-reliability, high-temperature switching in engine, transmission, and chassis control systems.

FAQ

Is AUIRFR2405 qualified to AEC-Q101?

Yes, AUIRFR2405 is explicitly qualified to AEC-Q101 Rev D for automotive applications. Qualification test reports-including HTGB, HTRB, UHAST, and temperature cycling-are published by Infineon and available upon request through authorized distributors. The device meets Grade 0 (−40°C to +175°C) junction temperature requirements.

What is the maximum continuous drain current at 100°C case temperature?

At T_C = 100°C, the silicon-limited continuous drain current is 40 A (per Absolute Maximum Ratings table). This value accounts for thermal derating from the 56 A rating at 25°C and reflects actual conduction capability under sustained high-temperature operation.

Can AUIRFR2405 be used in synchronous rectification topologies?

Yes-the device's body diode has characterized reverse recovery parameters: t_rr = 62 ns (typ.), Q_rr = 170 nC (typ.), and di/dt = 100 A/µs. These values support use in synchronous buck converters up to 300 kHz, provided gate drive timing avoids shoot-through and layout minimizes source inductance.

Does AUIRFR2405 require a gate resistor for automotive EMI compliance?

A gate resistor of 6.8 Ω is used in the official switching time test circuit (Fig. 10a) and yields measured t_d(off) = 55 ns and t_f = 78 ns. This value balances EMI suppression and switching loss-lower values increase dv/dt and radiated emissions; higher values raise conduction loss in PWM applications.

AUIRFR2405 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 34A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2430 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

AUIRFR2405 FAQ

1.How can I place an order for AUIRFR2405 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFR2405 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFR2405 reliable?

The price and inventory of AUIRFR2405 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFR2405 is usually 5 days.

3.What payment methods are accepted for AUIRFR2405?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFR2405 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFR2405?

AUIRFR2405 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFR2405 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFR2405?

For technical support, including AUIRFR2405 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFR2405 requirements.

6.How does Aetrix verify that AUIRFR2405 is sourced from the original manufacturer or authorized distributors?

All AUIRFR2405 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFR2405 meets industry standards.

7.What is the process for return or replacement of AUIRFR2405?

All AUIRFR2405 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFR2405, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFR2405 part is unused and in its original packaging.

Return procedure for AUIRFR2405:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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