Infineon Technologies AUIRFR2607ZTRL

Overview

AUIRFR2607ZTRL from Infineon is an automotive-grade N-channel D-Pak power MOSFET with 75 V V_DS, 17.6 mΩ typical R_DS(on) at V_GS = 10 V, 42 A package-limited continuous drain current, 175 °C maximum junction temperature, and rated for repetitive avalanche operation. It serves as a high-efficiency main or synchronous rectifier switch in 12 V automotive power systems including DC-DC converters and motor drivers.

For engineers reviewing the AUIRFR2607ZTRL datasheet, AUIRFR2607ZTRL pinout, AUIRFR2607ZTRL application, or AUIRFR2607ZTRL equivalent, key selection criteria include its low conduction loss at high ambient temperatures, fast switching (t_r = 59 ns, t_f = 28 ns), robust body diode (Q_rr = 28–42 nC), and validated 96 mJ single-pulse avalanche energy under defined test conditions.

Technical Context

This device employs Infineon's HEXFET® process to achieve ultra-low on-resistance per silicon area while maintaining ruggedness for automotive environments. Its thermal design supports sustained operation up to T_J = 175 °C, with R_θJC = 1.38 °C/W enabling efficient heatsinking through the exposed drain pad.

The MOSFET features a fully characterized body diode with V_SD = 1.3 V at I_S = 30 A and trr = 30–45 ns, supporting hard-switched topologies where reverse recovery behavior directly impacts EMI and switching loss. Gate charge parameters (Q_g = 34–51 nC, Q_gd = 14 nC) are optimized for gate driver compatibility in 12 V vehicle electrical systems.

Key Specifications

Pinout & Package

Package: D-Pak (TO-252AA), surface-mount, with exposed drain pad for thermal and electrical connection to PCB ground plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 75 V automotive power MOSFET applications.

Compared with STL120N7LF8AG and IRF3207PbF, AUIRFR2607ZTRL delivers balanced trade-offs: lower gate charge than IRF3207PbF for easier drive, superior automotive qualification and avalanche documentation versus STL120N7LF8AG, and D-Pak manufacturability with proven thermal interface.

Availability

AUIRFR2607ZTRL is available at Aetrix Electronics and suitable for automotive power conversion, motor control, and electronic control unit (ECU) applications requiring stable component supply across extended product lifecycles.

Supply support for AUIRFR2607ZTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

AUIRFR2607ZTRL belongs to the HEXFET® automotive power MOSFET product line, designed specifically for high-reliability 12 V vehicle subsystems including engine management, ADAS power stages, and electrified chassis controls.

FAQ

What is the maximum continuous drain current for AUIRFR2607ZTRL at 100°C case temperature?

The maximum continuous drain current at T_C = 100 °C is 32 A, as specified in the Absolute Maximum Ratings table under "ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)." This value reflects silicon-limited conduction capacity and assumes adequate PCB copper area per Infineon Application Note AN-994 for thermal management.

Is AUIRFR2607ZTRL suitable for synchronous rectification in a 500 kHz DC-DC converter?

Yes - its 59 ns rise time, 28 ns fall time, and 28–42 nC reverse recovery charge support synchronous rectification at 500 kHz. However, layout must minimize source inductance (LS = 7.5 nH) and gate loop inductance to prevent oscillation; gate resistor selection should balance switching loss and EMI per the recommended test circuit in Figure 13a.

Does AUIRFR2607ZTRL require a gate resistor for automotive 12 V applications?

Yes - a gate resistor (typically 5–15 Ω) is required to dampen ringing caused by gate-drain capacitance (C_rss = 110 pF) and parasitic inductance, especially in noisy automotive harness environments. The datasheet specifies R_G = 15 Ω for switching time measurements, and using lower values may increase EMI and gate driver stress without meaningful speed gain.

How is the 96 mJ avalanche energy rating validated for AUIRFR2607ZTRL?

The 96 mJ single-pulse avalanche energy (E_AS) is measured under controlled lab conditions: L = 0.21 mH, I_AS = 30 A, V_GS = 10 V, R_G = 25 Ω, starting T_J = 25 °C. It is 100% production-tested per note "" in the datasheet, with failure population analysis confirming thermal-limited failure mode alignment with TJmax.