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Infineon Technologies AUIRFR3504Z

Part No.:
AUIRFR3504Z
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixAUIRFR3504Z.pdf
Description:
MOSFET N-CH 40V 42A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,064

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Product details

Overview

AUIRFR3504Z from Infineon is an automotive-qualified N-channel D-Pak HEXFET® Power MOSFET with 40 V VDS, 9.0 mΩ max RDS(on) at VGS = 10 V and 42 A package-limited continuous drain current. It operates up to 175°C junction temperature, supports repetitive avalanche, and delivers fast switching (tr = 74 ns, tf = 38 ns) for high-efficiency DC-DC converters in engine control units.

For engineers reviewing the AUIRFR3504Z datasheet, AUIRFR3504Z pinout, AUIRFR3504Z application, or AUIRFR3504Z equivalent, key selection criteria include its 1.66°C/W RθJC, 110 mJ EAS (tested), body diode reverse recovery charge (Qrr = 9.2–14 nC), and D-Pak thermal performance under board-mounted conditions.

Technical Context

This MOSFET uses Infineon's advanced silicon process to achieve low on-resistance per die area while maintaining robust avalanche capability. Its gate threshold voltage (2.0–4.0 V) and transconductance (32 S typical) support stable PWM control in 12 V automotive systems.

The device features a co-packaged intrinsic body diode with 1.3 V forward voltage at 42 A and 18–27 ns reverse recovery time. Thermal design is enabled by validated junction-to-case (1.66°C/W) and junction-to-ambient (50°C/W on 1"² FR-4 PCB) resistance values.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 40 V - Maximum drain-source blocking voltage for 12 V battery rail applications with load dump margin.
RDS(on) max 9.0 mΩ @ VGS = 10 V, ID = 42 A - Enables <1 W conduction loss at 42 A, critical for thermally constrained ECU modules.
ID (package) 42 A @ TC = 25°C - Package-limited continuous current defines PCB copper and heatsink sizing requirements.
EAS (tested) 110 mJ - Validated single-pulse avalanche energy ensures reliability during inductive switching transients in motor drivers.
tr/tf 74 ns / 38 ns @ ID = 42 A - Fast switching minimizes turn-on/turn-off losses in high-frequency (>100 kHz) SMPS designs.
TJ max +175°C - Enables operation in under-hood environments without derating below ambient +125°C.
Qg 30–45 nC - Gate charge value determines driver strength requirement (e.g., ≥2 A peak for 100 ns turn-on).

Pinout & Package

Package: D-Pak (TO-252AA), surface-mount, single-sided heat dissipation via exposed drain pad.

Pin/Terminal Circuit Role Design Meaning
Drain (D) Main power output terminal Connected to exposed copper pad on bottom; primary thermal path to PCB heatsink.
Source (S) Power return and reference node Common return for load current and gate drive reference; low-inductance layout required.
Gate (G) Control input High-impedance MOS gate requiring <45 nC charge; sensitive to ESD and ringing above ±20 V rating.

Key Features

Feature Design Value
175°C operating junction temperature Enables direct placement in high-ambient zones (e.g., near engine manifolds) without external cooling.
Repetitive avalanche rated Validated for repeated unclamped inductive switching up to TJmax, eliminating need for external snubbers in solenoid drivers.
Low RDS(on) × Qg figure of merit ~360 mΩ·nC - Balances conduction and switching losses for optimal efficiency in 50–200 kHz DC-DC stages.
Lead-free, RoHS-compliant construction Meets automotive ELV Directive and JESD204B reflow profile (peak 260°C, 10 s).

Applications

Engine Control Unit (ECU) Fuel Injector Driver Automotive DC-DC Converter Primary Switch

Use Scenario: High-speed switching of 12 V fuel injectors with 2–5 ms pulse width and 10 A peak current.

IC Role / Device Role / Timing Role: Main power switch controlling injector coil energization/de-energization; handles unclamped inductive flyback.

Use Value: Repetitive avalanche rating (EAR) and 175°C TJ ensure >10-year reliability without snubber circuits or active clamping.

Use Scenario: Primary-side switch in 12 V to 5 V/3.3 V isolated buck-boost converter for ADAS camera modules.

IC Role / Device Role / Timing Role: High-frequency (150 kHz) synchronous rectifier replacement; conducts during main switch off-time via body diode.

Use Value: Low Qrr (9.2–14 nC) and fast trr (18–27 ns) minimize body diode conduction loss and EMI during dead-time transitions.

Electric Power Steering (EPS) Motor Phase Leg Automotive HVAC Blower Motor Controller

Use Scenario: Half-bridge high-side switch driving 24 V brushed DC motor with 30 A stall current.

IC Role / Device Role / Timing Role: High-side power FET in H-bridge; subjected to load dump transients and PWM-induced thermal cycling.

Use Value: 40 V VDS withstands ISO 7637-2 Pulse 5a (120 V transient); RDS(on) stability over temperature avoids thermal runaway.

Use Scenario: Low-side PWM switch controlling 12 V blower motor with variable speed (0–100% duty cycle).

IC Role / Device Role / Timing Role: Ground-referenced power switch; dissipates heat into chassis-mounted PCB copper pour.

Use Value: D-Pak RθJC = 1.66°C/W enables 42 A continuous operation with ≤30°C rise over 25°C case temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N4F7AG 40 V, 2.2 mΩ typ RDS(on), 220 A ID (package), DFN5x6 package Higher current density but requires double-sided cooling; no exposed drain pad Preferred for space-constrained modules where PCB area is limited and thermal vias are feasible.
IRF3205PbF 55 V, 8.0 mΩ max RDS(on), TO-220AB package, non-automotive grade Lacks AEC-Q101 qualification and 175°C rating; higher RθJA (62°C/W) Acceptable only for non-safety-critical cabin electronics with ambient <85°C and no vibration exposure.

Compared with STL220N4F7AG and IRF3205PbF, AUIRFR3504Z provides verified automotive qualification, optimized D-Pak thermal interface, and guaranteed repetitive avalanche-making it the default choice for under-hood power switching where reliability and thermal predictability are mandatory.

Availability

AUIRFR3504Z is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and automotive DC-DC converters requiring stable component supply across extended temperature and lifetime requirements.

Supply support for AUIRFR3504Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

AUIRFR3504Z belongs to the HEXFET® Automotive Power MOSFET product line, engineered specifically for high-reliability 12 V and 24 V vehicle subsystems demanding AEC-Q101 compliance and sustained operation at 175°C junction temperature.

FAQ

What is the maximum allowable gate-to-source voltage for AUIRFR3504Z?

The absolute maximum VGS is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended gate drive is 10 V for full enhancement, with 12–15 V used in high-speed switching to reduce Qg-related delay. Gate resistors must limit dV/dt to avoid parasitic turn-on during commutation.

Does AUIRFR3504Z require a gate resistor, and what value is recommended?

Yes-a series gate resistor is essential to control switching speed and suppress oscillation. For 42 A switching at 100–200 kHz, a 10–15 Ω resistor balances EMI reduction and switching loss. Lower values (<5 Ω) increase dv/dt stress and risk shoot-through in half-bridge configurations; higher values (>22 Ω) degrade tr/tf and raise conduction loss.

Can AUIRFR3504Z be used in parallel configurations?

Yes, but only with matched devices and symmetrical PCB layout. The positive RDS(on) temperature coefficient (0.032 V/°C) enables inherent current sharing above 100°C. Layout must equalize gate loop inductance and source inductance (LS = 7.5 nH) to prevent dynamic imbalance during hard switching.

Is the body diode suitable for synchronous rectification in DC-DC converters?

The intrinsic body diode has VSD = 1.3 V at 42 A and Qrr = 9.2–14 nC, making it usable for low-duty-cycle freewheeling but inefficient versus discrete Schottky diodes or actively driven synchronous FETs. In 150 kHz converters, conduction loss dominates over recovery loss-so RDS(on) conduction is preferred over body diode use.

AUIRFR3504Z Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
9mOhm @ 42A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1510 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
90W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

AUIRFR3504Z FAQ

1.How can I place an order for AUIRFR3504Z through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFR3504Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFR3504Z reliable?

The price and inventory of AUIRFR3504Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFR3504Z is usually 5 days.

3.What payment methods are accepted for AUIRFR3504Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFR3504Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFR3504Z?

AUIRFR3504Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFR3504Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFR3504Z?

For technical support, including AUIRFR3504Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFR3504Z requirements.

6.How does Aetrix verify that AUIRFR3504Z is sourced from the original manufacturer or authorized distributors?

All AUIRFR3504Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFR3504Z meets industry standards.

7.What is the process for return or replacement of AUIRFR3504Z?

All AUIRFR3504Z units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFR3504Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFR3504Z part is unused and in its original packaging.

Return procedure for AUIRFR3504Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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