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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFR3607

Name: AUIRFR3607
Brand: Infineon Technologies
SKU: AUIRFR3607
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFR3607

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: AUIRFR3607.pdf

Description:: MOSFET N-CH 75V 56A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:5,440

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Product details

Overview

AUIRFR3607 from Infineon Technologies (formerly International Rectifier) is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak package, rated for 75V V_DSS, 7.34 mΩ typical R_DS(on) at V_GS = 10 V, and 56 A continuous drain current (package-limited). It integrates a fast-recovery body diode and supports repetitive avalanche operation up to 175°C junction temperature - deployed in automotive DC-DC converters, motor control inverters, and high-side load switches.

For engineers reviewing the AUIRFR3607 datasheet, AUIRFR3607 pinout, AUIRFR3607 application, or AUIRFR3607 equivalent, key selection criteria include its 9.0 mΩ max R_DS(on), 56 nC total gate charge, 175°C T_J rating, AEC-Q101 qualification, and D-Pak thermal performance under high-current pulsed loads.

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction loss per unit area while maintaining robust switching behavior. Its gate threshold voltage (2.0–4.0 V) enables compatibility with standard 3.3 V/5 V logic-level drivers when used with appropriate gate resistance (e.g., 6.8 Ω), and its 0.55 Ω internal gate resistance contributes to predictable turn-on/turn-off timing.

The device features a thermally optimized D-Pak package with low R_JC (1.045 °C/W), enabling efficient heat transfer to PCB copper. Its body diode exhibits 33–50 ns reverse recovery time (T_J = 25–125°C), 32–48 nC Q_rr, and 1.3 V forward drop at 46 A - critical for synchronous rectification and freewheeling in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - maximum blocking voltage before avalanche onset; suitable for 48 V automotive systems with margin.
R_DS(on) typ./max	7.34 / 9.0 mΩ @ V_GS = 10 V - defines on-state power loss (P = I²R); impacts thermal design at >20 A continuous.
I_D (package-limited)	56 A @ T_C = 25°C - practical current limit dictated by bond wire and leadframe heating, not silicon.
Q_g	56–84 nC - determines gate driver power requirement and switching transition time in hard-switched circuits.
T_J max	175°C - enables operation in under-hood environments without derating below ambient +125°C.
E_AS	300 mJ (thermally limited) - quantifies unclamped inductive switching energy handling capability at T_J = 25°C.
C_oss eff. (TR)	610 pF - effective output capacitance governing turn-off loss and resonant behavior in LLC or ZVS designs.

Pinout & Package

Supplied in surface-mount D-Pak (TO-252AA) package with exposed drain pad for enhanced thermal conduction. Pin assignment is standardized: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Controls channel conduction; requires 10 V for full enhancement; 0.55 Ω internal resistance affects gate drive loop damping.
Pin 2 (D)	Drain	High-side switching node; electrically connected to exposed metal tab - must be isolated from heatsink unless referenced to same potential.
Pin 3 (S)	Source	Return path for load current; also serves as reference for gate drive; body diode anode connects here.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	7.34 mΩ typ. at 10 V gate drive - reduces conduction loss by >30% vs. legacy 75 V automotive MOSFETs of similar size.
Repetitive avalanche rating	Rated for repeated unclamped inductive switching up to E_AR = 14 mJ - eliminates need for external snubbers in solenoid or relay drivers.
175°C junction rating	Enables direct mounting in engine bay modules without forced air cooling - validated per AEC-Q101 high-temp operating life test.
Fast body diode	t_rr = 33–50 ns, Q_rr = 32–48 nC - minimizes commutation loss and EMI in bidirectional DC-DC stages.
AEC-Q101 qualified	Passed stress tests including HTGB, HTRB, TC, UHAST, and ESD (HBM Class H1C, CDM Class C4) - required for safety-critical automotive subsystems.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 46 A and 400 µs pulse width.

IC Role / Device Role / Timing Role: High-side N-channel switch replacing mechanical relay; operates in hard-switched mode with <43 ns turn-off delay.

Use Value: Eliminates contact wear and bounce; achieves <100 ns total switching window (t_d(off) + t_f) enabling precise fuel metering at 100+ Hz PWM rates.

Use Scenario: PWM-controlled 24 V blower motor delivering variable airflow in cabin climate systems.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge configuration; handles 56 A continuous with integrated body diode freewheeling.

Use Value: Reduces system BOM count by eliminating external flyback diode; 1.3 V V_SD drop at 46 A lowers thermal load on PCB copper.

48 V Mild Hybrid DC-DC Converter

Automotive LED Headlamp Matrix Driver

Use Scenario: Synchronous rectification in 48 V–12 V buck converter delivering up to 3 kW with >96% efficiency.

IC Role / Device Role / Timing Role: Secondary-side power switch; leverages low C_oss eff. (610 pF) and fast Q_gd/Q_gs ratio for ZVS-assisted turn-on.

Use Value: Enables operation at 300 kHz with <1.5 W conduction + switching loss at 40 A - meets ISO 26262 ASIL-B thermal safety margin.

Use Scenario: Individual pixel current control in adaptive LED headlamps requiring 75 V transient protection during load dump.

IC Role / Device Role / Timing Role: High-side switch protecting each LED string; withstands 75 V V_DSS and absorbs 300 mJ single-pulse avalanche energy.

Use Value: Survives ISO 7637-2 Pulse 5a (load dump up to 60 V, 400 ms) without external TVS; simplifies front-end protection architecture.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 75 V automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N7LF8AG	75 V, 1.3 mΩ R_DS(on), 130 A package rating, PowerFLAT 5x6 package	Higher current capacity but larger footprint; lower R_DS(on) demands tighter gate drive layout to avoid oscillation	Preferred for new designs targeting >80 A continuous; requires requalification of thermal interface and PCB copper pour.
IRF3207PbF	75 V, 8.0 mΩ R_DS(on), TO-220AB package, non-automotive grade	Lacks AEC-Q101 qualification; higher R_JA (50 °C/W) limits power density in compact modules	Acceptable for non-safety-critical industrial prototypes; not approved for production in ASIL-A or higher systems.

Compared with STL130N7LF8AG and IRF3207PbF, the AUIRFR3607 delivers optimal balance of automotive qualification, D-Pak manufacturability, and 56 A sustained current - making it the default choice for cost-sensitive, space-constrained ECU and body electronics where AEC compliance is mandatory.

Availability

AUIRFR3607 is available at Aetrix Electronics and suitable for automotive engine control units, HVAC motor drives, and 48 V mild hybrid DC-DC converters requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for AUIRFR3607 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

The AUIRFR3607 belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine, transmission, and chassis control modules.

FAQ

Is AUIRFR3607 compatible with 5 V logic-level gate drivers?

No - the AUIRFR3607 has a gate threshold voltage range of 2.0–4.0 V but requires ≥10 V V_GS to achieve its specified 7.34 mΩ R_DS(on). At 5 V, R_DS(on) rises above 25 mΩ, increasing conduction loss significantly. A dedicated gate driver (e.g., Infineon IRS2007) or level-shifting circuit is required for reliable enhancement.

What is the maximum allowable case temperature for continuous 56 A operation?

The 56 A rating is specified at T_C = 25°C. For continuous operation at elevated case temperatures, derating follows the linear factor of 0.96 W/°C. At T_C = 100°C, maximum continuous current drops to approximately 32 A to maintain T_J ≤ 175°C, assuming R_JC = 1.045 °C/W and no additional ambient thermal resistance.

Does AUIRFR3607 include integrated ESD protection?

Yes - it is qualified to AEC-Q101 with Human Body Model (HBM) Class H1C (±2000 V), Machine Model (MM) Class M4 (±600 V), and Charged Device Model (CDM) Class C4 (±1000 V). These ratings are verified per JEDEC standards and apply to gate-source and gate-drain terminals during handling and assembly.

Can AUIRFR3607 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (0.096 V/°C) ensures inherent current sharing stability. However, layout symmetry (matched gate trace inductance, source inductance, and thermal coupling) is essential. Application Note AN-994 recommends using Kelvin-source connections and individual 6.8 Ω gate resistors to suppress oscillation in multi-device arrays.

AUIRFR3607 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 46A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 84 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3070 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

AUIRFR3607 FAQ

1.How can I place an order for AUIRFR3607 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFR3607 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFR3607 reliable?

The price and inventory of AUIRFR3607 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFR3607 is usually 5 days.

3.What payment methods are accepted for AUIRFR3607?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFR3607 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFR3607?

AUIRFR3607 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFR3607 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFR3607?

For technical support, including AUIRFR3607 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFR3607 requirements.

6.How does Aetrix verify that AUIRFR3607 is sourced from the original manufacturer or authorized distributors?

All AUIRFR3607 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFR3607 meets industry standards.

7.What is the process for return or replacement of AUIRFR3607?

All AUIRFR3607 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFR3607, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFR3607 part is unused and in its original packaging.

Return procedure for AUIRFR3607:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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