Infineon Technologies AUIRFR4615

Overview

AUIRFR4615 from Infineon Technologies (formerly International Rectifier) is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in DPAK (TO-252) package, rated for 150 V V_DSS, 34 mΩ typ. R_DS(on) at V_GS = 10 V, and 33 A continuous drain current at T_C = 25°C. It integrates a robust intrinsic body diode and supports repetitive avalanche operation up to 175°C junction temperature - deployed in automotive DC-DC converters, motor control inverters, and high-side load switches.

For engineers reviewing the AUIRFR4615 datasheet, AUIRFR4615 pinout, AUIRFR4615 application, or AUIRFR4615 equivalent, key selection criteria include its 175°C automotive qualification, 9.0 nC gate-to-drain charge for fast switching, 155 pF C_oss, 1.045 °C/W R_θJC, and compliance with AEC-Q101-002 (ESD MM Class M3).

Technical Context

This MOSFET employs advanced trench-gate process technology to minimize conduction losses while maintaining high dv/dt immunity and thermal robustness. Its design enables stable operation under unclamped inductive switching (UIS) with EAS = 300 mJ and I_AR = 109 A at T_J = 25°C, supported by a low 2.7 Ω internal gate resistance and 175°C maximum junction temperature rating.

The device features a thermally optimized DPAK package with direct die-to-case thermal path, enabling high-power density in space-constrained automotive modules. Its body diode exhibits t_rr = 70 ns and Q_rr = 177 nC at T_J = 25°C, making it suitable for synchronous rectification and freewheeling in hard-switched topologies.

Key Specifications

Pinout & Package

Package: DPAK (TO-252), surface-mount, thermally enhanced with exposed drain pad for PCB heat sinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Compared with STL130N10F7 and NTMFS5C675NL, the AUIRFR4615 uniquely balances 150 V rating, AEC-Q101 qualification, and DPAK thermal performance - making it the only drop-in solution for 24 V commercial vehicle DC-DC and motor control designs requiring extended temperature reliability.

Availability

AUIRFR4615 is available at Aetrix Electronics and suitable for automotive power conversion, motor control, and high-reliability industrial switching applications requiring stable component supply across multi-year production cycles.

Supply support for AUIRFR4615 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with core expertise in silicon and wide-bandgap power devices.

The AUIRFR4615 belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-temperature switching in engine control, chassis, and electrification systems.

FAQ

What is the maximum allowable gate-to-source voltage for AUIRFR4615?

The absolute maximum V_GS is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding ±20 V risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) to prevent overshoot during fast switching, especially in high-di/dt automotive environments where parasitic inductance can induce transient spikes.

Does AUIRFR4615 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and suppress oscillation. For 10 V gate drive and 21 A load, a 7.3 Ω resistor yields t_d(off) ≈ 25 ns and t_f ≈ 20 ns per datasheet Fig. 23b. Lower values increase switching speed but raise EMI risk; higher values improve stability but increase switching loss. Layout-dependent parasitics may necessitate empirical tuning between 5–15 Ω.

Can AUIRFR4615 be used in parallel configurations?

Yes, but with strict layout symmetry: matched gate trace lengths, Kelvin source connections, and individual gate resistors. The positive R_DS(on) temperature coefficient (0.19 V/°C) provides inherent current sharing above 100°C, but thermal coupling between devices must be minimized using separate thermal pads or spaced placement to avoid thermal runaway below 100°C.

Is the body diode in AUIRFR4615 suitable for synchronous rectification?

It is usable but not optimized: t_rr = 70 ns and Q_rr = 177 nC at 25°C result in measurable recovery loss at >100 kHz. For true synchronous rectification, a dedicated low-Q_rr MOSFET like IPP65R041CFD7 is preferred. However, in 20–50 kHz automotive DC-DC converters, its body diode reliably handles freewheeling with acceptable efficiency penalty.