My Inquiry
My Account
Infineon Technologies AUIRFR5305
- Part No.:
- AUIRFR5305
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
AUIRFR5305.pdf
- Description:
- MOSFET P-CH 55V 31A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,519
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
AUIRFR5305 from Infineon is an automotive-qualified N-channel D-Pak (TO-252AA) HEXFET® Power MOSFET with -55 V V(BR)DSS, 0.065 Ω RDS(on) max at VGS = -10 V and ID = -16 A, -31 A continuous drain current at TC = 25°C, and 175°C maximum junction temperature - used in high-reliability DC-DC converters, motor control inverters, and battery disconnect circuits in engine control units.
For engineers reviewing the AUIRFR5305 datasheet, AUIRFR5305 pinout, AUIRFR5305 application, or AUIRFR5305 equivalent, key selection criteria include avalanche energy rating (280 mJ single-pulse), dynamic dv/dt capability (-5.0 V/ns), gate charge (63 nC), thermal resistance (1.4 °C/W junction-to-case), and automotive qualification per AEC-Q101.
Technical Context
This device implements a cellular planar silicon structure optimized for low RDS(on) per die area and robust unclamped inductive switching. Its fully rated avalanche capability supports reliable operation under transient overloads without external snubbers in automotive power stages.
The body diode exhibits 71–110 ns reverse recovery time and 170–250 nC Qrr at IF = -16 A and di/dt = 100 A/µs, enabling efficient synchronous rectification and freewheeling in half-bridge topologies where fast diode recovery reduces switching losses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | -55 V - Withstands up to -55 V drain-source voltage before breakdown, enabling use in 48 V automotive systems with margin. |
| RDS(on) max | 0.065 Ω @ VGS = -10 V, ID = -16 A - Low conduction loss supports >95% efficiency in high-current power switches. |
| ID (TC = 25°C) | -31 A - Continuous drain current rating at case temperature 25°C, defining thermal design baseline for heatsink sizing. |
| EAS | 280 mJ - Single-pulse avalanche energy at VDD = -25 V, TJ = 25°C - enables robustness against inductive kickback in motor drives. |
| Qg | 63 nC - Total gate charge determines required driver peak current and switching speed trade-off in PWM control. |
| dv/dt rating | -5.0 V/ns - Peak diode recovery dv/dt capability ensures immunity to false turn-on during fast commutation in bridge circuits. |
| TJ range | -55°C to +175°C - Full automotive junction temperature range supports under-hood deployment without derating. |
Pinout & Package
D-Pak (TO-252AA) package with exposed drain pad for thermal performance; surface-mount, single-sided PCB layout; 3-pin configuration with G-S-D terminal assignment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | Accepts -10 V logic-level gate drive; threshold voltage -2.0 to -4.0 V enables direct microcontroller interface with level-shifting. |
| S (Source) | Reference node | Common return path for load current; internal source inductance 7.5 nH affects high-speed switching ringing. |
| D (Drain) | Power output | Connected to high-side or low-side load; exposed metal pad provides low RθJC (1.4 °C/W) for thermal transfer to PCB copper. |
Key Features
| Feature | Design Value |
|---|---|
| Automotive qualification | AEC-Q101 qualified - validated for automotive-grade reliability including temperature cycling, humidity, and mechanical shock. |
| Repetitive avalanche | Rated for repetitive avalanche events up to Tjmax - eliminates need for external clamping in inductive load switching. |
| Dynamic dv/dt immunity | -5.0 V/ns rated - prevents spurious turn-on during fast voltage transients in half-bridge configurations. |
| Lead-free & RoHS | Compliant with EU RoHS Directive 2011/65/EU - suitable for environmentally regulated production programs. |
| Fast switching | td(on) = 14 ns, tf = 63 ns - enables high-frequency (>100 kHz) operation in DC-DC converters with minimal dead-time penalty. |
Applications
| Engine Control Unit (ECU) Load Switch | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-side battery disconnect switch in ECU power distribution module, handling cold-crank and load-dump transients. IC Role / Device Role / Timing Role: N-channel high-side power switch controlled via isolated gate driver; operates in linear and saturated modes during fault isolation. Use Value: 280 mJ single-pulse avalanche energy and -55 V breakdown withstand load-dump spikes up to ISO 7637-2 Pulse 5a without failure. | Use Scenario: Synchronous rectifier in 48 V–12 V bidirectional buck-boost converter for mild hybrid vehicle energy recovery. IC Role / Device Role / Timing Role: Low-side power MOSFET in synchronous rectification stage; body diode conducts during dead time, then channel conducts during active period. Use Value: 71–110 ns trr and 170–250 nC Qrr minimize reverse recovery losses, improving conversion efficiency by ≥1.2% at 20 kHz switching. |
| Electric Power Steering (EPS) Motor Inverter | Commercial Vehicle Battery Management System |
Use Scenario: Half-bridge leg in 3-phase inverter driving brushless DC motor in EPS system, operating continuously at 150°C ambient. IC Role / Device Role / Timing Role: Low-side switching element in H-bridge topology; driven with 6.8 Ω gate resistor for controlled turn-off delay (39 ns). Use Value: 175°C max junction temperature and 1.4 °C/W RθJC enable stable operation without forced air cooling in sealed EPS housing. | Use Scenario: Isolation switch between traction battery pack and auxiliary loads in Class 8 truck BMS, requiring fail-safe open-circuit protection. IC Role / Device Role / Timing Role: Solid-state main contactor replacement; operated in on/off mode with 110 W PD rating supporting 31 A continuous current. Use Value: Fully avalanche-rated design sustains repetitive short-circuit events during fault detection window, meeting ISO 26262 ASIL-B functional safety requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N5LF8AG | 55 V V(BR)DSS, 0.0018 Ω RDS(on) max, PowerFLAT 8x8 package, lower RDS(on) but higher Qg (120 nC) | Better conduction loss at <10 A, but slower switching due to higher gate charge - less suitable for >100 kHz operation | Select when thermal budget dominates over switching loss; requires stronger gate driver. |
| IRF4905PbF | 55 V V(BR)DSS, 0.02 Ω RDS(on) max, TO-220 package, non-automotive grade, no AEC-Q101 qualification | Lacks automotive qualification and avalanche rating - unsuitable for safety-critical or under-hood use | Only acceptable for cost-sensitive industrial prototypes without automotive compliance requirements. |
Compared with STL220N5LF8AG and IRF4905PbF, AUIRFR5305 delivers balanced conduction-switching performance, guaranteed automotive qualification, and proven avalanche ruggedness - making it the preferred choice for production-grade automotive power stages where reliability and regulatory compliance are mandatory.
Availability
AUIRFR5305 is available at Aetrix Electronics and suitable for engine control units, electric power steering inverters, 48 V mild hybrid DC-DC converters, and commercial vehicle battery management systems requiring stable component supply across multi-year automotive production cycles.
Supply support for AUIRFR5305 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to IATF 16949.
AUIRFR5305 belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, designed specifically for high-reliability, high-temperature power switching in engine, chassis, and electrification systems.
FAQ
Is AUIRFR5305 suitable for high-side switching with standard gate drivers?
Yes - its -4.0 V maximum gate threshold voltage allows reliable turn-on with -10 V gate drive, and the D-Pak package's low RθJC (1.4 °C/W) supports thermal stability in high-side configurations. However, a dedicated high-side gate driver with floating supply is required to maintain VGS across the full switching range.
What is the maximum recommended PCB copper area for thermal performance?
For optimal thermal performance, Infineon recommends a minimum 1" × 1" (25.4 mm × 25.4 mm) copper pour on the drain pad layer using FR-4 PCB material, with ≥4 thermal vias (0.3 mm diameter) connecting to inner ground planes - achieving near-datasheet RθJA of 50 °C/W under still-air conditions.
Does AUIRFR5305 require external avalanche protection in motor drive applications?
No - AUIRFR5305 is fully avalanche rated with 280 mJ single-pulse and 11 mJ repetitive avalanche energy, validated per unclamped inductive test conditions (VDD = -25 V, L = 2.1 mH). This eliminates the need for external TVS or RC snubbers in typical brushed/BLDC motor H-bridge designs.
How does the body diode performance compare to discrete Schottky diodes?
The integrated body diode has VSD = -1.3 V at -16 A and trr = 71–110 ns - higher forward drop and slower recovery than most Schottky diodes. It is sufficient for freewheeling in medium-frequency (<50 kHz) applications but not optimal for ultra-high-efficiency synchronous rectification where discrete SiC Schottky diodes offer superior performance.
AUIRFR5305 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 65mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 63 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1200 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
AUIRFR5305 FAQ
1.How can I place an order for AUIRFR5305 through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRFR5305 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRFR5305 reliable?
The price and inventory of AUIRFR5305 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFR5305 is usually 5 days.
3.What payment methods are accepted for AUIRFR5305?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFR5305 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRFR5305?
AUIRFR5305 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRFR5305 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRFR5305?
For technical support, including AUIRFR5305 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFR5305 requirements.
6.How does Aetrix verify that AUIRFR5305 is sourced from the original manufacturer or authorized distributors?
All AUIRFR5305 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFR5305 meets industry standards.
7.What is the process for return or replacement of AUIRFR5305?
All AUIRFR5305 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFR5305, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRFR5305 part is unused and in its original packaging.
Return procedure for AUIRFR5305:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AUIRFR5305 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
