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Infineon Technologies AUIRFR5305TRL
- Part No.:
- AUIRFR5305TRL
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
AUIRFR5305TRL.pdf
- Description:
- MOSFET P-CH 55V 31A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:244
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Product details
Overview
AUIRFR5305TRL from Infineon is an automotive-grade N-channel D-Pak (TO-252AA) HEXFET® Power MOSFET with -55 V V(BR)DSS, 0.065 Ω RDS(on) max at VGS = -10 V and ID = -16 A, -31 A continuous drain current at TC = 25°C, fully avalanche rated, and qualified to AEC-Q101 standards for engine control, powertrain, and body electronics applications.
For engineers reviewing the AUIRFR5305TRL datasheet, AUIRFR5305TRL pinout, AUIRFR5305TRL application, or AUIRFR5305TRL equivalent, key selection criteria include its -55 V breakdown voltage, low on-resistance under automotive thermal stress, repetitive avalanche capability up to Tjmax, fast switching (td(on) = 14 ns, tf = 63 ns), and D-Pak thermal performance (RθJC = 1.4 °C/W).
Technical Context
This device employs Infineon's Cellular Planar HEXFET® structure optimized for high-current, high-reliability automotive switching. Its gate threshold voltage (-2.0 to -4.0 V) ensures robust turn-on in noisy vehicle environments, while dynamic dv/dt rating (-5.0 V/ns) supports stable operation during fast inductive load commutation.
The MOSFET integrates a co-packaged body diode with -1.3 V forward voltage at -16 A and 71–110 ns reverse recovery time, enabling efficient freewheeling in H-bridge and DC-DC topologies. Thermal design is supported by junction-to-case resistance of 1.4 °C/W and 175°C maximum operating temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | -55 V - Withstands reverse-biased drain-source transients common in 42 V automotive systems and inductive load switching. |
| RDS(on) max | 0.065 Ω @ VGS = -10 V, ID = -16 A - Enables <1 W conduction loss at 31 A peak, critical for thermally constrained ECUs. |
| ID (TC = 25°C) | -31 A - Supports high-current motor drivers and solenoid controls without external heatsinking in short-duty cycles. |
| EAS | 280 mJ - Absorbs unclamped inductive energy during fault events without failure, enhancing system safety. |
| dv/dt Rating | -5.0 V/ns - Resists false triggering during rapid voltage transients in starter-generator or battery disconnect circuits. |
| RθJC | 1.4 °C/W - Allows direct mounting to metal-core PCBs or heatsinks for sustained 22 A operation at 100°C case temperature. |
| Qg / Qgd | 63 nC / 29 nC - Enables efficient gate drive with standard 1 A drivers while maintaining controlled Miller-effect turn-off. |
Pinout & Package
D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection; surface-mount, single-sided PCB assembly; 3-pin configuration with G-S-D terminal assignment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | Receives negative VGS to turn on; threshold range (-2.0 to -4.0 V) ensures noise immunity in 12 V/42 V vehicle networks. |
| S (Source) | Reference node | Common return path for load current; internal source inductance (7.5 nH) affects high-speed switching ringing. |
| D (Drain) | Power output | Exposed copper pad electrically and thermally connected to drain; enables low-inductance, high-current routing to chassis ground. |
Key Features
| Feature | Design Value |
|---|---|
| Automotive qualification | AEC-Q101 qualified - Validated for temperature cycling, humidity, mechanical shock, and lifetime reliability in engine bay and powertrain modules. |
| Fully avalanche rated | Single-pulse EAS = 280 mJ, repetitive EAR = 11 mJ - Eliminates need for external snubbers in inductive load switching. |
| Fast switching | td(on) = 14 ns, tf = 63 ns - Reduces switching losses in 20–100 kHz DC-DC converters and PWM motor drives. |
| High-temperature operation | 175°C max TJ - Maintains RDS(on) stability and gate control margin across full automotive ambient range (-40°C to +150°C). |
| Low gate charge | Qg = 63 nC - Compatible with low-power microcontroller GPIO or dedicated gate drivers (e.g., Infineon 1EDN7512B) without boost stages. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | 42 V Mild Hybrid Starter-Generator Interface |
|---|---|
Use Scenario: High-speed, high-current switching of fuel injectors in gasoline direct injection systems with 12 V supply and 1–2 ms pulse widths. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current; handles repetitive 31 A pulses with minimal voltage drop and thermal rise. Use Value: 0.065 Ω RDS(on) limits conduction loss to ≤0.63 W at 3.5 A average, enabling compact PCB layout without forced air cooling. | Use Scenario: Bidirectional power switching in 42 V belt-driven starter-generators, managing regenerative braking and cranking currents. IC Role / Device Role / Timing Role: High-current half-bridge leg with integrated body diode supporting synchronous rectification during regeneration. Use Value: -55 V V(BR)DSS withstands load dump transients up to +60 V; 280 mJ EAS absorbs inductive kickback during sudden torque reversal. |
| Body Control Module (BCM) Window Lift Motor Driver | Electric Power Steering (EPS) Torque Assist Circuit |
Use Scenario: Reversible H-bridge driving 12 V DC motors for power windows, requiring bidirectional current up to 25 A and stall protection. IC Role / Device Role / Timing Role: Low-side N-channel switch in dual-MOSFET bridge; leverages fast 63 ns fall time for precise PWM speed control. Use Value: 175°C TJ rating allows continuous 22 A operation at 100°C case temperature, meeting ISO 16750-4 vibration and thermal cycling requirements. | Use Scenario: High-efficiency torque assist in 12 V EPS systems, where MOSFETs switch motor phases at 10–30 kHz with tight dead-time control. IC Role / Device Role / Timing Role: Phase-leg switch with low Qgd (29 nC) minimizing Miller-induced shoot-through risk during high dv/dt transitions. Use Value: 5.0 V/ns dv/dt rating prevents spurious turn-on during 100 V/µs phase voltage slew, ensuring functional safety compliance per ISO 26262 ASIL-B. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4LF6AG | 40 V V(BR)DSS, 0.95 mΩ RDS(on), PowerFLAT 5x6 package, 175°C TJ | Lower voltage rating limits use to 24 V systems; superior RDS(on) benefits low-power EPS but lacks AUIRFR5305TRL's -55 V margin for load dump. | Select when optimizing for conduction loss in 12–24 V subsystems with space-constrained layouts. |
| ON Semiconductor NTMFS5C670NL | 60 V V(BR)DSS, 5.2 mΩ RDS(on), SO-8FL package, 150°C TJ | Higher voltage headroom but lower thermal limit and no AEC-Q101 qualification; unsuitable for under-hood deployment. | Prefer for non-automotive industrial DC-DC where 60 V rating and ultra-low RDS(on) outweigh qualification needs. |
Compared with STL220N4LF6AG and NTMFS5C670NL, AUIRFR5305TRL uniquely balances -55 V ruggedness, AEC-Q101 compliance, and D-Pak thermal performance-making it optimal for high-reliability 12/42 V automotive power switching where transient immunity and junction temperature margin are critical.
Availability
AUIRFR5305TRL is available at Aetrix Electronics and suitable for engine control units, body control modules, and mild hybrid power interfaces requiring stable component supply across extended automotive product lifecycles.
Supply support for AUIRFR5305TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.
AUIRFR5305TRL belongs to the HEXFET® Automotive Power MOSFET product line, designed specifically for high-reliability, high-current switching in engine, transmission, and chassis control systems under extreme thermal and electrical stress.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The AUIRFR5305TRL supports -22 A continuous drain current at TC = 100°C with VGS = -10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D-Pak package and ensures safe operation within the 175°C maximum junction temperature limit.
Is the body diode suitable for synchronous rectification in a buck converter?
Yes-the integrated body diode has a typical forward voltage of -1.3 V at -16 A and reverse recovery time of 71–110 ns, making it usable for low-frequency (<100 kHz) synchronous rectification. However, its Qrr (170–250 nC) is higher than discrete Schottky diodes, so efficiency gains are limited above 50 kHz.
Does AUIRFR5305TRL require a gate resistor for automotive EMI compliance?
Yes-a gate resistor (typically 6.8 Ω, per datasheet test conditions) is recommended to control dv/dt and reduce radiated emissions. The device's 29 nC Qgd and 63 nC Qg make it sensitive to fast edge rates; proper gate resistance suppresses ringing and meets CISPR 25 Class 5 requirements in motor drive applications.
Can AUIRFR5305TRL be paralleled with identical units for higher current handling?
Yes-its negative temperature coefficient of RDS(on) promotes current sharing. However, layout symmetry (matched gate and source inductance), individual gate resistors, and thermal coupling must be carefully managed. Derate total current by ≥15% versus sum of individual ratings to account for parametric spread and thermal imbalance.
AUIRFR5305TRL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 65mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 63 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1200 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3
AUIRFR5305TRL FAQ
1.How can I place an order for AUIRFR5305TRL through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRFR5305TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRFR5305TRL reliable?
The price and inventory of AUIRFR5305TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFR5305TRL is usually 5 days.
3.What payment methods are accepted for AUIRFR5305TRL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFR5305TRL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRFR5305TRL?
AUIRFR5305TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRFR5305TRL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRFR5305TRL?
For technical support, including AUIRFR5305TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFR5305TRL requirements.
6.How does Aetrix verify that AUIRFR5305TRL is sourced from the original manufacturer or authorized distributors?
All AUIRFR5305TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFR5305TRL meets industry standards.
7.What is the process for return or replacement of AUIRFR5305TRL?
All AUIRFR5305TRL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFR5305TRL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRFR5305TRL part is unused and in its original packaging.
Return procedure for AUIRFR5305TRL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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