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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFR540Z

Name: AUIRFR540Z
Brand: Infineon Technologies
SKU: AUIRFR540Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFR540Z

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: AUIRFR540Z.pdf

Description:: MOSFET N-CH 100V 35A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:8,032

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Product details

Overview

AUIRFR540Z from Infineon is an automotive-grade N-channel D-Pak HEXFET® Power MOSFET with 100 V V_DS, 22.5 mΩ typical R_DS(on) at V_GS = 10 V, 35 A continuous drain current at T_C = 25°C, and 175°C maximum junction temperature - deployed in solenoid injection drivers and body control modules where high-reliability switching under thermal stress is required.

For engineers reviewing the AUIRFR540Z datasheet, AUIRFR540Z pinout, AUIRFR540Z application, or AUIRFR540Z equivalent, this page delivers verified electrical parameters, validated D-Pak terminal mapping, automotive qualification context (AEC-Q101), and real-world design trade-offs versus alternative MOSFETs for low-power automotive power stages.

Technical Context

This device uses trench-gate silicon processing to achieve low on-resistance per die area while maintaining robust unclamped inductive switching capability. Its 75 mJ tested single-pulse avalanche energy (E_AS) and 12 A repetitive avalanche current rating support reliable operation in solenoid drive circuits with flyback energy recovery.

The gate charge profile shows 39 nC total Q_g with 11 nC Q_gs and 12 nC Q_gd, enabling fast turn-on (14 ns delay) and controlled dV/dt during commutation. Body diode reverse recovery time is 32–48 ns with 40–60 nC Q_rr, suitable for freewheeling in DC-DC and motor control topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 24 V automotive systems with ≥4× safety margin against load dump transients.
R_DS(on) typ.	22.5 mΩ @ V_GS = 10 V, I_D = 21 A - enables ≤0.5 W conduction loss at 15 A, critical for thermally constrained body control modules.
I_D cont.	35 A @ T_C = 25°C - rated for sustained solenoid coil drive without derating in forced-air or heatsink-mounted configurations.
E_AS tested	75 mJ - 100% production-tested avalanche capability ensures reliability in unclamped inductive switching (e.g., fuel injector turn-off).
T_J max	175°C - qualified for under-hood environments including automatic voltage regulator (AVR) feedback paths and HVAC actuators.
Q_g	39 nC - balances switching speed and gate driver loading; compatible with standard 1 A peak gate drivers in 100 kHz PWM applications.
R_θJC	1.64 °C/W - allows direct heatsink mounting with minimal thermal interface resistance for compact power stage layouts.

Pinout & Package

Package: D-Pak (TO-252AA), surface-mount, single-die N-channel MOSFET with exposed drain pad for thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level signal; threshold voltage 2.0–4.0 V ensures compatibility with 3.3 V/5 V microcontrollers via level-shifting or gate driver.
D (Drain)	High-side power switch node	Connected to load supply rail (e.g., battery+); electrically tied to exposed copper pad for thermal and current path integrity.
S (Source)	Return path / reference node	Common return for gate drive and load current; used as ground reference for current sensing in high-side configurations.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use per stress test requirements including HTOL, TC, HAST, and UHAST - no screening waivers required.
175°C junction rating	Enables operation in engine bay locations without external thermal derating, supporting compact packaging in ECU modules.
Improved repetitive avalanche	Rated for 12 A repetitive avalanche current - eliminates need for external snubbers in solenoid valve drivers with inductive kickback.
Low C_oss eff.	190 pF effective output capacitance - reduces switching losses during hard-commutation in 24 V DC-DC converters.
Fast body diode	32 ns t_rr and 40 nC Q_rr - minimizes reverse recovery losses in synchronous rectifier and freewheeling applications.

Applications

Automatic Voltage Regulator (AVR)

Solenoid Injection

Use Scenario: Regulating alternator field current in 12 V/24 V vehicle charging systems under wide ambient temperature and load transient conditions.

IC Role / Device Role / Timing Role: High-side switch controlling field winding current; operates in linear and saturated modes depending on regulation demand.

Use Value: 175°C T_J rating and 100 V V_DS withstand capability ensure stable regulation during 40 V load dump events without latch-up or degradation.

Use Scenario: Driving 12 V diesel fuel injectors requiring precise 1–5 ms pulse-width modulation with fast turn-off to prevent dribble.

IC Role / Device Role / Timing Role: Low-side switch sinking injector coil current; must absorb unclamped inductive energy during turn-off.

Use Value: 75 mJ tested E_AS and 12 A repetitive avalanche rating eliminate need for external TVS/clamp diodes in cost-sensitive engine control units.

Body Control Module (BCM)

Low-Power Automotive Lighting

Use Scenario: Controlling door lock actuators, window lift motors, and mirror adjustment relays in centralized BCMs.

IC Role / Device Role / Timing Role: General-purpose power switch handling intermittent 5–20 A loads with infrequent switching (<10 Hz).

Use Value: 22.5 mΩ R_DS(on) limits self-heating to <1.5 W at 15 A, enabling PCB-only thermal management without heatsinks in space-constrained modules.

Use Scenario: Dimmable LED headlight auxiliary circuits and interior lighting with PWM-based brightness control.

IC Role / Device Role / Timing Role: High-side switch modulating LED string current at 1–20 kHz; requires low Q_g and fast switching.

Use Value: 39 nC Q_g and 42 ns rise time enable clean 20 kHz PWM edges with minimal shoot-through risk and EMI generation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N10F7	100 V, 2.5 mΩ R_DS(on), 130 A I_D, PowerFLAT 5x6 package - lower on-resistance but larger footprint and higher gate charge (65 nC).	Better for high-current DC-DC converters; less suitable for D-Pak-restricted PCB layouts or gate-driver-limited designs.	Select when thermal budget allows smaller R_DS(on) and board area permits 5x6 mm² footprint.
IRF3205PbF	55 V, 8.0 mΩ R_DS(on), TO-220 package - lower voltage rating, higher R_DS(on), non-automotive qualified.	Limited to 12 V systems only; lacks AEC-Q101 validation and 175°C rating - unsuitable for under-hood deployment.	Acceptable only for non-automotive prototyping or cost-sensitive 12 V industrial controls with no qualification requirement.

Compared with STL130N10F7 and IRF3205PbF, AUIRFR540Z offers the optimal balance of D-Pak mountability, AEC-Q101 compliance, and 100 V/22.5 mΩ performance for space- and reliability-constrained automotive power switches - neither alternative matches its combination of package fit, qualification, and ruggedness in solenoid and BCM applications.

Availability

AUIRFR540Z is available at Aetrix Electronics and suitable for Automatic Voltage Regulator (AVR), Solenoid Injection, and Body Control Module (BCM) applications requiring stable component supply across automotive production lifecycles.

Supply support for AUIRFR540Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

AUIRFR540Z belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, thermally demanding automotive power switching applications including engine management, chassis control, and body electronics.

FAQ

Is AUIRFR540Z pin-compatible with AUIRFU540Z?

Yes - both share identical D-Pak (TO-252AA) package and G-D-S pinout. The AUIRFU540Z is the I-Pak variant with different thermal resistance (R_θJC = 2.0°C/W vs. 1.64°C/W) and lower power dissipation (75 W vs. 91 W), but electrical characteristics and terminal assignment are identical.

What is the maximum recommended gate resistor for 100 kHz PWM operation?

A 10 Ω gate resistor is recommended for 100 kHz operation, balancing switching speed (42 ns rise time) and gate oscillation suppression. With 39 nC Q_g, this yields ~0.4 V/ns dV/dt at the gate, minimizing EMI while keeping turn-on loss below 0.8 mJ per cycle at 21 A drain current.

Does AUIRFR540Z require a gate driver in automotive microcontroller interfaces?

Not strictly required - its 2.0–4.0 V V_GS(th) allows direct drive from 5 V MCUs, but a dedicated gate driver (e.g., TC4427) is strongly advised for consistent 10 V gate bias, faster switching, and protection against shoot-through in half-bridge configurations used in solenoid drivers.

How does the 75 mJ tested E_AS differ from the 39 mJ thermally limited E_AS value?

The 75 mJ value is 100% production-tested per Infineon specification; the 39 mJ reflects worst-case thermal limit assuming T_J starts at 25°C and reaches 175°C. Designers should use 75 mJ for layout validation and 39 mJ for worst-case thermal modeling in sustained avalanche scenarios.

AUIRFR540Z Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 28.5mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 59 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1690 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 91W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

AUIRFR540Z FAQ

1.How can I place an order for AUIRFR540Z through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFR540Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFR540Z reliable?

The price and inventory of AUIRFR540Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFR540Z is usually 5 days.

3.What payment methods are accepted for AUIRFR540Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFR540Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFR540Z?

AUIRFR540Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFR540Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFR540Z?

For technical support, including AUIRFR540Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFR540Z requirements.

6.How does Aetrix verify that AUIRFR540Z is sourced from the original manufacturer or authorized distributors?

All AUIRFR540Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFR540Z meets industry standards.

7.What is the process for return or replacement of AUIRFR540Z?

All AUIRFR540Z units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFR540Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFR540Z part is unused and in its original packaging.

Return procedure for AUIRFR540Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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