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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFR5410

Name: AUIRFR5410
Brand: Infineon Technologies
SKU: AUIRFR5410
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFR5410

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: AUIRFR5410.pdf

Description:: MOSFET P-CH 100V 13A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRFR5410 from Infineon is a P-channel automotive-grade HEXFET® Power MOSFET in D-Pak (TO-252AA) package, rated for -100 V V(BR)DSS, 0.205 Ω RDS(on) max at VGS = -10 V and ID = -7.8 A, with -13 A continuous drain current at TC = 25°C and 175°C maximum junction temperature. It is fully avalanche rated, supports repetitive avalanche up to Tjmax, and features fast switching (tr = 58 ns, tf = 46 ns) for high-efficiency DC-DC conversion and motor control in under-hood automotive systems.

For engineers reviewing the AUIRFR5410 datasheet, AUIRFR5410 pinout, AUIRFR5410 application, or AUIRFR5410 equivalent, key selection criteria include its -100 V breakdown voltage, low on-resistance at automotive-relevant gate drive levels, rugged avalanche capability, thermal derating behavior (0.53 W/°C), and D-Pak mounting compatibility with standard PCB layouts.

Technical Context

This P-channel MOSFET employs Infineon's Cellular Planar HEXFET® process to achieve low specific on-resistance while maintaining robust dynamic performance. Its -100 V V(BR)DSS and -13 A ID rating support high-side switching in 12 V and 24 V automotive power rails, including load dump-tolerant circuits and reverse polarity protection.

The device delivers 194 mJ single-pulse avalanche energy (TJ = 25°C, L = 6.4 mH) and supports repetitive avalanche up to 6.3 mJ per pulse, enabling reliable operation in inductive switching environments without external snubbers. Its -5.0 V/ns di/dt-rated body diode recovery ensures stable commutation in H-bridge and buck converter topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	-100 V - Withstands 12 V system transients up to ISO 7637-2 Pulse 5a (load dump) without clamping.
RDS(on) max	0.205 Ω @ VGS = -10 V, ID = -7.8 A - Enables <1.6 W conduction loss at 8 A DC load in ambient-limited thermal designs.
ID (TC = 25°C)	-13 A - Supports continuous high-side switching of automotive solenoids, fuel pumps, and HVAC actuators.
EAS	194 mJ - Absorbs unclamped inductive energy from 6.4 mH loads without failure during fault events.
Qg	58 nC - Requires ~0.58 mC gate drive charge per 10 kHz switching cycle, compatible with standard gate drivers.
RθJC	1.9 °C/W - Enables direct heatsink mounting for >40 W dissipation with ≤75°C case-to-heatsink ΔT.
tr / tf	58 ns / 46 ns - Limits switching losses to <150 µJ per cycle at 100 kHz in 24 V buck converters.

Pinout & Package

D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection; surface-mount footprint optimized for automotive PCBs with FR-4 material and recommended AN-994 layout.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Exposed metal tab electrically connected to drain; must be soldered to large copper pour or heatsink for thermal management and low-inductance return path.
Source	Reference node for gate drive and current return	Connected to system ground or high-side rail reference; defines VGS potential and carries full load current back to source.
Gate	Control input for channel conduction	High-impedance MOS gate requiring negative voltage relative to source (-10 V typical) to fully enhance; sensitive to ESD and ringing.

Key Features

Feature	Design Value
Automotive qualification	Qualified per AEC-Q101 standards for under-hood use; validated for -55°C to +150°C operation and 1000+ thermal cycles.
Repetitive avalanche rating	6.3 mJ per pulse allows sustained inductive turn-off without derating or external protection in motor drives.
Dynamic dV/dt immunity	-5.0 V/ns body diode recovery dv/dt rating prevents false turn-on during fast voltage transients in half-bridge configurations.
Low RDS(on) × Qg figure of merit	~11.9 Ω·nC - Balances conduction and switching losses for optimal efficiency in 10–100 kHz automotive SMPS.
Lead-free & RoHS compliant	Meets EU Directive 2011/65/EU and J-STD-020 moisture sensitivity level 1 (MSL1) for reflow assembly.

Applications

Engine Control Unit (ECU) Load Switching

Automotive Reverse Polarity Protection

Use Scenario: High-side switching of fuel injectors and ignition coils in engine management systems subject to load dump and cold crank conditions.

IC Role / Device Role / Timing Role: P-channel MOSFET used as controlled high-side switch; operates in linear and saturated modes during PWM-driven actuation.

Use Value: -100 V rating withstands ISO 7637-2 Pulse 5a (up to 60 V transient); 175°C TJmax enables placement near hot engine components.

Use Scenario: Input protection circuit for infotainment head units and ADAS ECUs powered from vehicle battery with risk of reverse battery connection.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement; blocks reverse current while minimizing forward voltage drop.

Use Value: -1.6 V VSD at -7.8 A reduces power loss by >60% vs. Schottky diode; fully avalanche rated handles surge energy during misconnection events.

12 V/24 V DC-DC Converter High-Side Switch

Electric Power Steering (EPS) Motor Phase Control

Use Scenario: Synchronous rectification and high-side switching in buck-derived isolated DC-DC modules supplying 5 V/3.3 V logic rails.

IC Role / Device Role / Timing Role: P-channel MOSFET operating in hard-switched mode with 100 kHz–500 kHz PWM; gate driven by dedicated high-side driver.

Use Value: 58 nC Qg enables efficient gate driving with low-power drivers; 0.205 Ω RDS(on) limits conduction loss to <1.3 W at 8 A output.

Use Scenario: Half-bridge leg in three-phase EPS motor driver where high-side switching must survive short-circuit and regenerative braking events.

IC Role / Device Role / Timing Role: P-channel MOSFET used in high-side position of phase leg; commutates motor current through body diode during freewheeling.

Use Value: 130–190 ns trr and -5.0 V/ns dv/dt rating ensure clean commutation without shoot-through; 194 mJ EAS absorbs regenerative energy during emergency stop.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR9024N	V(BR)DSS = -60 V, RDS(on) = 0.28 Ω @ -10 V, lower avalanche rating (EAS = 100 mJ)	Not suitable for 24 V systems with load dump; limited to 12 V auxiliary rails only	Select only when voltage stress is strictly ≤60 V and thermal margin permits higher RDS(on).
STP12PF06	V(BR)DSS = -60 V, RDS(on) = 0.22 Ω @ -10 V, non-automotive qualified, TJmax = 150°C	Lacks AEC-Q101 validation and reduced thermal margin for under-hood deployment	Acceptable for non-safety-critical cabin electronics but not for ECU or EPS applications.

Compared with IRFR9024N and STP12PF06, AUIRFR5410 provides superior voltage margin, certified automotive reliability, and higher avalanche robustness-making it the only choice for 24 V load dump–exposed high-side switches in safety-critical systems.

Availability

AUIRFR5410 is available at Aetrix Electronics and suitable for automotive engine control, reverse polarity protection, and DC-DC converter high-side switching requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for AUIRFR5410 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

AUIRFR5410 belongs to the HEXFET® Automotive Power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in 12 V and 24 V vehicle electrical systems.

FAQ

Is AUIRFR5410 pin-compatible with standard D-Pak P-channel MOSFETs?

Yes - AUIRFR5410 uses the industry-standard D-Pak (TO-252AA) outline with Drain (tab), Source, and Gate terminals in identical physical locations. Its pinout matches IRFR9024N, STP12PF06, and other D-Pak P-channel devices, enabling direct PCB footprint reuse.

What gate drive voltage is required for full enhancement?

AUIRFR5410 achieves specified RDS(on) of 0.205 Ω at VGS = -10 V. While it begins conducting at VGS(th) between -2.0 V and -4.0 V, -10 V is required for minimal on-resistance and thermal stability across temperature. Gate drive must remain within ±20 V absolute maximum.

Can AUIRFR5410 replace N-channel MOSFETs in high-side configurations?

No - As a P-channel device, AUIRFR5410 is inherently suited for high-side switching without bootstrap circuitry, unlike N-channel MOSFETs which require floating gate drive. It cannot substitute for N-channel parts in low-side roles due to polarity and threshold mismatch.

Does AUIRFR5410 require external avalanche protection?

No - AUIRFR5410 is fully avalanche rated with 194 mJ single-pulse and 6.3 mJ repetitive avalanche energy capability. When operated within SOA limits (Fig. 8) and with proper PCB layout (low-inductance source path), no external snubber or TVS is needed for typical automotive inductive loads.

AUIRFR5410 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 205mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 58 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 760 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 66W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

AUIRFR5410 FAQ

1.How can I place an order for AUIRFR5410 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFR5410 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFR5410 reliable?

The price and inventory of AUIRFR5410 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFR5410 is usually 5 days.

3.What payment methods are accepted for AUIRFR5410?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFR5410 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFR5410?

AUIRFR5410 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFR5410 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFR5410?

For technical support, including AUIRFR5410 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFR5410 requirements.

6.How does Aetrix verify that AUIRFR5410 is sourced from the original manufacturer or authorized distributors?

All AUIRFR5410 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFR5410 meets industry standards.

7.What is the process for return or replacement of AUIRFR5410?

All AUIRFR5410 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFR5410, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFR5410 part is unused and in its original packaging.

Return procedure for AUIRFR5410:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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