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Infineon Technologies AUIRFR5410TRL
- Part No.:
- AUIRFR5410TRL
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
AUIRFR5410TRL.pdf
- Description:
- MOSFET P-CH 100V 13A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,874
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Product details
Overview
AUIRFR5410TRL from Infineon is a P-channel automotive-grade HEXFET® Power MOSFET in D-Pak (TO-252AA) package, rated for -100 V V(BR)DSS, 0.205 Ω RDS(on) max at VGS = -10 V and ID = -7.8 A, with -13 A continuous drain current at TC = 25°C and 175°C maximum junction temperature. It delivers fast switching (tr = 58 ns, tf = 46 ns), full avalanche ruggedness (EAS = 194 mJ), and is qualified to AEC-Q101 standards for under-hood power control.
For engineers reviewing the AUIRFR5410TRL datasheet, AUIRFR5410TRL pinout, AUIRFR5410TRL application, or AUIRFR5410TRL equivalent, this page provides verified electrical parameters, thermal derating data, body diode recovery characteristics (trr = 130–190 ns), gate charge profile (Qg = 58 nC), and automotive qualification context - all critical for high-reliability DC-DC, motor driver, and load switch designs.
Technical Context
This P-channel MOSFET operates as a high-side or low-side switch in automotive power distribution systems, leveraging planar silicon technology to achieve low conduction loss and robust dynamic dV/dt immunity (-5.0 V/ns). Its negative threshold voltage (-2.0 to -4.0 V) enables direct interface with standard logic-level gate drivers in 12 V/24 V battery systems.
The device integrates a monolithic p-n junction body diode with VSD = -1.6 V at IS = -7.8 A and exhibits fully characterized reverse recovery (Qrr = 650–970 nC, trr = 130–190 ns), supporting synchronous rectification and inductive load commutation without external freewheeling diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | -100 V - Withstands up to -100 V drain-to-source blocking voltage before avalanche onset, suitable for 24 V automotive systems with load dump transients. |
| RDS(on) max | 0.205 Ω @ VGS = -10 V, ID = -7.8 A - Enables <1.3 W conduction loss at 7.8 A, reducing heatsink requirements in compact modules. |
| ID (TC = 25°C) | -13 A - Continuous drain current rating under ideal case-cooled conditions, defining maximum steady-state power delivery capability. |
| EAS | 194 mJ - Single-pulse avalanche energy rating confirms safe operation during inductive turn-off events without external snubbers. |
| Qg | 58 nC - Total gate charge determines required gate driver peak current (e.g., >1.2 A for 50 ns turn-on) and switching loss trade-offs. |
| trr / Qrr | 130–190 ns / 650–970 nC - Body diode recovery metrics directly impact efficiency and EMI in flyback and half-bridge topologies. |
| TJ range | -55°C to +175°C - Extended junction temperature range supports placement near engines or in sealed enclosures without derating. |
Pinout & Package
D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal enhancement; 3-pin configuration optimized for PCB heat spreading and automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal requiring -10 V to fully enhance; threshold range (-2.0 to -4.0 V) allows compatibility with 3.3 V/5 V microcontroller outputs via level-shifting. |
| 2 (D) | Drain | Main high-side power path; electrically connected to exposed copper pad for low thermal resistance (RθJC = 1.9 °C/W) and mechanical anchoring. |
| 3 (S) | Source | Reference node for gate drive; tied to system ground in low-side configurations or to battery positive in high-side switches with isolated gate bias. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control, transmission, and ADAS power stages per stress test requirements. |
| Fully avalanche rated | Guarantees survivability during unclamped inductive switching events up to EAS = 194 mJ without parameter shift or failure. |
| Dynamic dV/dt immunity | -5.0 V/ns rated dv/dt prevents false turn-on during high-slew-rate transients common in motor drives and solenoid controls. |
| Low RDS(on) × Qg figure of merit | ~12 nC·Ω - Balances conduction and switching losses for optimal efficiency in 100–500 kHz SMPS and PWM motor control. |
| Lead-free & RoHS compliant | Meets EU Directive 2011/65/EU and automotive ELV requirements; compatible with standard Pb-free reflow profiles (peak 260°C). |
Applications
| Automotive Load Switch | DC-DC Converter High-Side Switch |
|---|---|
Use Scenario: Controlling power to fuel pumps, cooling fans, or lighting modules in 12 V/24 V vehicle architectures. IC Role / Device Role / Timing Role: High-side P-channel switch enabling ON/OFF control with active-low logic input and integrated body diode for back-EMF clamping. Use Value: Eliminates need for external high-side driver ICs; -100 V rating handles ISO 7637-2 pulse 5a (load dump) up to 120 V. | Use Scenario: Synchronous rectification or high-side switching in non-isolated buck converters for infotainment or ADAS subsystems. IC Role / Device Role / Timing Role: Main power switch operating at 200–400 kHz with controlled turn-on/turn-off timing (td(on) = 15 ns, tf = 46 ns). Use Value: 0.205 Ω RDS(on) limits conduction loss to ≤1.3 W at 7.8 A, enabling >92% efficiency at 5 A output with minimal thermal margin. |
| Motor Driver Half-Bridge Leg | Reverse Polarity Protection |
Use Scenario: Low-side switching in brushed DC motor H-bridges for power seats, windows, or HVAC actuators. IC Role / Device Role / Timing Role: Fast-switching N-channel complement (used as low-side) or P-channel high-side element with matched tr/tf for dead-time optimization. Use Value: 58 ns total gate charge and 46 ns fall time support precise PWM edge alignment, minimizing shoot-through risk in bidirectional control. | Use Scenario: Protecting ECUs and sensors from reverse battery connection in service environments. IC Role / Device Role / Timing Role: Series-connected P-channel MOSFET acting as ideal diode with <1.6 V forward drop (VSD) and no leakage path when off. Use Value: Replaces Schottky diodes with lower forward voltage drop at high current, reducing power loss by >40% at 10 A versus 0.4 V diode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB80P04P4L-04 | -40 V V(BR)DSS, 4.0 mΩ RDS(on), TO-263 package | Limited to 12 V systems; superior RDS(on) but insufficient for 24 V load dump | Select only for low-voltage (<16 V) high-current applications where thermal performance outweighs voltage margin. |
| STP12P10 | -100 V V(BR)DSS, 0.22 Ω RDS(on), TO-220 package | Through-hole mounting, higher RθJA (65 °C/W), no AEC-Q101 qualification | Acceptable for industrial prototypes but not for production automotive use due to qualification and thermal limitations. |
Compared with IPB80P04P4L-04 and STP12P10, AUIRFR5410TRL uniquely combines -100 V rating, AEC-Q101 compliance, D-Pak thermal performance (RθJC = 1.9 °C/W), and 194 mJ avalanche energy - making it the only qualified choice for production 24 V automotive power switches requiring transient robustness and surface-mount scalability.
Availability
AUIRFR5410TRL is available at Aetrix Electronics and suitable for automotive load switching, DC-DC converter high-side control, motor driver half-bridge legs, and reverse polarity protection requiring stable component supply across extended temperature and lifecycle demands.
Supply support for AUIRFR5410TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.
AUIRFR5410TRL belongs to the HEXFET® Automotive Power MOSFET product line, engineered specifically for high-reliability 12 V/24 V vehicle subsystems demanding AEC-Q101 qualification, avalanche ruggedness, and thermally efficient surface-mount packaging.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The AUIRFR5410TRL supports -8.2 A continuous drain current at TC = 100°C with VGS = -10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D-Pak package and must be validated against actual PCB layout and airflow conditions using RθJA = 50 °C/W (PCB mount) or 110 °C/W (free air).
Does the body diode support synchronous rectification in buck converters?
Yes - the integrated p-n junction body diode has VSD = -1.6 V at -7.8 A and trr = 130–190 ns, enabling use in non-synchronous buck topologies. However, for synchronous rectification, an external N-channel MOSFET is required; this device serves only as the high-side switch, not the rectifier.
Is gate resistive damping required for reliable switching?
Yes - the datasheet specifies RG = 9.1 Ω for turn-off delay (td(off)) measurement, indicating that gate resistance critically controls switching speed and ringing. A 10–22 Ω series gate resistor is recommended to limit peak gate current, suppress oscillation, and manage EMI without compromising thermal performance.
How does the -5.0 V/ns dV/dt rating affect layout design?
The -5.0 V/ns dynamic dV/dt immunity defines the maximum allowable drain voltage slew rate before unintended turn-on occurs. Layout must minimize source inductance (LS = 7.5 nH) and ensure tight gate loop routing to avoid coupling; ground plane integrity and Kelvin source connections are essential for maintaining this rating in high-di/dt applications.
AUIRFR5410TRL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 205mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 58 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 760 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 66W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3
AUIRFR5410TRL FAQ
1.How can I place an order for AUIRFR5410TRL through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRFR5410TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRFR5410TRL reliable?
The price and inventory of AUIRFR5410TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFR5410TRL is usually 5 days.
3.What payment methods are accepted for AUIRFR5410TRL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFR5410TRL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRFR5410TRL?
AUIRFR5410TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRFR5410TRL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRFR5410TRL?
For technical support, including AUIRFR5410TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFR5410TRL requirements.
6.How does Aetrix verify that AUIRFR5410TRL is sourced from the original manufacturer or authorized distributors?
All AUIRFR5410TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFR5410TRL meets industry standards.
7.What is the process for return or replacement of AUIRFR5410TRL?
All AUIRFR5410TRL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFR5410TRL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRFR5410TRL part is unused and in its original packaging.
Return procedure for AUIRFR5410TRL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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