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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFR8401

Name: AUIRFR8401
Brand: Infineon Technologies
SKU: AUIRFR8401
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFR8401

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: AUIRFR8401.pdf

Description:: MOSFET N-CH 40V 100A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:6,127

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Product details

Overview

AUIRFR8401 from Infineon is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak package, rated for 40 V V_DS, 3.2 mΩ R_DS(on) (typ.) at V_GS = 10 V and I_D = 60 A, with 175 °C maximum junction temperature and repetitive avalanche capability. It serves as a high-efficiency main power switch in electric power steering (EPS) and battery disconnect circuits.

For engineers reviewing the AUIRFR8401 datasheet, AUIRFR8401 pinout, AUIRFR8401 application, or AUIRFR8401 equivalent, key selection criteria include its silicon-limited 100 A continuous drain current at T_C = 25 °C, low gate charge (Q_g = 42 nC typ.), fast switching (t_r = 34 ns), and validated avalanche energy rating (E_AS = 67 mJ).

Technical Context

This MOSFET employs Infineon's advanced trench-gate process to achieve ultra-low on-resistance per die area while maintaining robust short-circuit withstand time and thermal stability up to 175 °C. Its body diode exhibits 28 ns reverse recovery time (t_rr) and 3.2 V/ns peak dv/dt immunity at T_J = 175 °C.

The device operates with gate threshold voltage (V_GS(th)) between 2.2 V and 3.9 V, enabling reliable turn-on with standard 5 V or 10 V logic-level drivers. Its dynamic parameters-including C_iss = 2200 pF, C_oss = 340 pF, and Q_gd = 14 nC-support optimized gate drive design for high-frequency DC-DC converters and motor control inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V automotive battery systems with transient margin.
R_DS(on) (typ.)	3.2 mΩ at V_GS = 10 V, I_D = 60 A - Enables <1.15 W conduction loss at 60 A, critical for EPS thermal management.
I_D (Silicon Limited)	100 A at T_C = 25 °C - Sustains high peak load currents without thermal runaway under controlled heatsinking.
E_AS	67 mJ (thermally limited) - Supports unclamped inductive switching in battery disconnect and start-stop micro-hybrid applications.
Q_g	42 nC (typ.) - Reduces gate drive power and enables use of lower-cost, integrated gate drivers in compact EPS modules.
t_r/t_f	34 ns / 24 ns - Minimizes switching transition losses in 20–100 kHz DC-DC and motor phase-leg designs.
T_J max	175 °C - Meets AEC-Q101 requirements for under-hood placement in engine bay and transmission control units.

Pinout & Package

Supplied in surface-mount D-Pak (TO-252) package with exposed drain pad for enhanced thermal performance. The package features gull-wing leads compatible with standard reflow soldering profiles and supports PCB-mounted thermal derating of 0.53 W/°C.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Accepts 0–20 V gate drive; internal R_G = 2.0 Ω limits ringing and simplifies snubber design.
D (Drain)	High-side power output	Connected to PCB copper pour for thermal dissipation; R_θJC = 1.9 °C/W enables direct heatsink mounting.
S (Source)	Power return / reference node	Serves as local ground reference for current sensing; low-inductance layout minimizes shoot-through risk during PWM commutation.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	3.2 mΩ typ. at 10 V drive reduces conduction loss by >35% vs. legacy 40 V automotive MOSFETs.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching up to T_Jmax, eliminating need for external clamping diodes in EPS H-bridge protection.
175 °C operation	Enables placement near heat sources (e.g., motor windings) without derating, supporting compact module integration.
Fast body diode	t_rr = 28 ns at T_J = 25 °C and Q_rr = 28 nC enable efficient synchronous rectification in bidirectional DC-DC converters.
Lead-free & RoHS	Complies with automotive ELV directive and IPC-J-STD-020D moisture sensitivity level 1 (MSL1) for unlimited floor life.

Applications

Electric Power Steering (EPS)

Battery Disconnect Switch

Use Scenario: High-current H-bridge driver controlling assist motor torque in 12 V/24 V automotive steering systems.

IC Role / Device Role / Timing Role: Main power switch in low-side and high-side legs; handles bidirectional 60–100 A peak currents with <100 ns dead-time control.

Use Value: Low R_DS(on) and fast switching minimize heat generation during frequent torque transients, extending module lifetime beyond 15-year vehicle service life.

Use Scenario: Solid-state replacement for mechanical relays in 12 V battery main disconnect for start-stop and energy recuperation systems.

IC Role / Device Role / Timing Role: Single-pole, high-side power switch with integrated avalanche ruggedness for fault-tolerant load isolation.

Use Value: Eliminates relay wear-out and contact arcing; 67 mJ E_AS rating ensures safe interruption of inductive loads (e.g., solenoids, pre-charge circuits) without external protection.

Start/Stop Micro-Hybrid

DC-DC Converter Primary Switch

Use Scenario: Engine cranking and regenerative braking energy routing in 48 V mild hybrid architectures.

IC Role / Device Role / Timing Role: Bidirectional power switch in buck-boost converter topology managing energy flow between 12 V and 48 V buses.

Use Value: 175 °C rating allows operation adjacent to engine control units; low Q_g enables high-frequency (>50 kHz) PWM for reduced magnetics size and improved efficiency.

Use Scenario: Primary-side switch in isolated flyback or forward converter powering ADAS sensors and infotainment subsystems.

IC Role / Device Role / Timing Role: High-efficiency, high-reliability power switch handling 30–60 A pulsed drain current at 100 kHz switching frequency.

Use Value: C_oss = 340 pF and Q_gd = 14 nC reduce switching losses and EMI, meeting CISPR-25 Class 5 radiated emissions limits without added filtering.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 2.2 mΩ R_DS(on), 220 A I_D (package-limited), DFN5x6 package	Higher current density but requires multi-layer PCB thermal vias; no avalanche rating published	Select when board space is constrained and external avalanche protection is acceptable.
IRF1405ZPBF	55 V, 5.3 mΩ R_DS(on), TO-220 package, non-automotive grade	Lacks AEC-Q101 qualification and 175 °C rating; higher R_DS(on) increases conduction loss by ~65%	Consider only for non-automotive industrial prototypes where cost is primary and thermal margin is ample.

Compared with STL220N4F7AG and IRF1405ZPBF, AUIRFR8401 delivers optimal balance of automotive qualification, proven avalanche ruggedness, and thermally efficient D-Pak packaging-making it the preferred choice for production EPS and battery-switch modules requiring zero field failures.

Availability

AUIRFR8401 is available at Aetrix Electronics and suitable for electric power steering (EPS), battery disconnect switches, and start-stop micro-hybrid systems requiring stable component supply across multi-year automotive production cycles.

Supply support for AUIRFR8401 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

AUIRFR8401 belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine bay and chassis control applications.

FAQ

What is the maximum continuous drain current for AUIRFR8401 at 100 °C case temperature?

At T_C = 100 °C, the continuous drain current is 71 A (silicon-limited) with V_GS = 10 V. This value is derived from thermal derating curves in the datasheet and reflects junction temperature constraints-not package lead limitations. Operation above this current requires active cooling or reduced duty cycle to maintain T_J ≤ 175 °C.

Does AUIRFR8401 require a gate resistor for automotive PWM applications?

Yes-a gate resistor (typically 2.7 Ω to 10 Ω) is recommended to dampen ringing caused by PCB trace inductance and internal gate resistance (R_G = 2.0 Ω). The datasheet specifies t_d(on), t_r, t_d(off), and t_f test conditions using R_G = 2.7 Ω, confirming its role in achieving specified switching times and minimizing EMI in EPS motor drives.

Can AUIRFR8401 replace mechanical relays in battery disconnect applications?

Yes-its 100 A continuous current rating, 400 A pulsed current (I_DM), and 67 mJ single-pulse avalanche energy make it suitable for solid-state battery disconnect. Unlike relays, it eliminates contact bounce, arcing, and wear-out failure modes, provided gate drive is isolated and overvoltage clamping is implemented per Infineon AN-1005 guidelines.

Is the body diode in AUIRFR8401 optimized for synchronous rectification?

Yes-the body diode has t_rr = 28 ns (T_J = 25 °C), Q_rr = 28 nC, and dv/dt immunity of 3.2 V/ns at T_J = 175 °C, enabling efficient synchronous operation in bidirectional DC-DC converters. However, external Schottky diodes may still be preferred in high-frequency (>200 kHz) designs to further reduce recovery losses.

AUIRFR8401 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.25mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

AUIRFR8401 FAQ

1.How can I place an order for AUIRFR8401 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFR8401 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFR8401 reliable?

The price and inventory of AUIRFR8401 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFR8401 is usually 5 days.

3.What payment methods are accepted for AUIRFR8401?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFR8401 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFR8401?

AUIRFR8401 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFR8401 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFR8401?

For technical support, including AUIRFR8401 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFR8401 requirements.

6.How does Aetrix verify that AUIRFR8401 is sourced from the original manufacturer or authorized distributors?

All AUIRFR8401 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFR8401 meets industry standards.

7.What is the process for return or replacement of AUIRFR8401?

All AUIRFR8401 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFR8401, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFR8401 part is unused and in its original packaging.

Return procedure for AUIRFR8401:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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