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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFR8403

Name: AUIRFR8403
Brand: Infineon Technologies
SKU: AUIRFR8403
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFR8403

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: AUIRFR8403.pdf

Description:: MOSFET N-CH 40V 100A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRFR8403 from Infineon Technologies (formerly International Rectifier) is an N-channel automotive-grade HEXFET® Power MOSFET in D-Pak package, rated for 40 V V_DS, 2.4 mΩ typ. R_DS(on) at V_GS = 10 V, and 100 A package-limited continuous drain current at T_C = 25°C. It serves as a high-efficiency main power switch in electric power steering (EPS), start/stop battery switches, and DC-DC converters.

For engineers reviewing the AUIRFR8403 datasheet, AUIRFR8403 pinout, AUIRFR8403 application, or AUIRFR8403 equivalent, key selection criteria include its 175°C junction rating, repetitive avalanche capability up to I_AR = 76 A, fast switching (t_r = 32 ns, t_f = 23 ns), low Q_gd = 22 nC, and automotive qualification per AEC-Q101.

Technical Context

This MOSFET employs advanced silicon processing to achieve ultra-low on-resistance per die area while maintaining robust thermal performance. Its integral body diode supports synchronous rectification and unclamped inductive switching with validated E_AS = 114 mJ (thermally limited) and E_AR = 99 mJ (tested).

The device operates with gate threshold voltage V_GS(th) = 2.2–3.9 V, exhibits strong temperature stability (dV_BRDSS/dT_J = 0.03 V/°C), and delivers high transconductance g_fs = 283 S - enabling precise gate drive control in high-current automotive power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery systems including load dump transients.
R_DS(on) max	3.1 mΩ at V_GS = 10 V, T_J = 125°C - Ensures <1.5 W conduction loss at 76 A, critical for EPS motor drive efficiency.
I_D (package)	100 A continuous at T_C = 25°C - Defined by bond wire current limit; enables high-power switching without external paralleling.
E_AR	99 mJ repetitive avalanche energy - Validated for unclamped inductive turn-off in DC-DC converter freewheeling paths.
T_J max	175°C - Enables operation in under-hood environments with minimal derating, supporting ASIL-B system compliance.
Q_gd	22 nC - Low Miller charge reduces switching losses and improves immunity to dv/dt-induced false turn-on in high-noise EPS modules.
V_SD	0.9–1.3 V forward voltage of integrated body diode - Supports bidirectional current flow in regenerative braking interfaces.

Pinout & Package

Package: D-Pak (TO-252AA), surface-mount, single-ended heat sink interface via exposed drain pad. Thermal resistance R_θJC = 1.52°C/W enables direct PCB copper pour cooling.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main power output terminal	Internally connected to exposed metal pad; primary thermal path and high-current return node in half-bridge configurations.
Source (S)	Power ground reference	Low-inductance source connection for gate driver return; defines common-mode voltage for current sensing.
Gate (G)	Control input	High-impedance MOS gate requiring <2.7 Ω series resistance to suppress ringing during 10 V logic-level drive.

Key Features

Feature	Design Value
175°C junction rating	Enables sustained operation in engine bay locations without forced air cooling or oversized heatsinks.
Repetitive avalanche rated	Validated for ≥1000 cycles at I_AR = 76 A, supporting reliable unclamped inductive switching in EPS motor phase legs.
Ultra-low R_DS(on)	2.4 mΩ typ. at 10 V drive reduces conduction loss by >35% vs. legacy 40 V automotive MOSFETs, improving system efficiency.
Fast switching (t_r/t_f)	32 ns rise / 23 ns fall time at I_D = 76 A minimizes transition losses in 20–100 kHz DC-DC and motor control PWM stages.
AEC-Q101 qualified	Passes stress tests including HTGB, HTRB, TC, UHAST, and ESD per automotive reliability standards.

Applications

Electric Power Steering (EPS)

Battery Disconnect Switch

Use Scenario: High-current motor phase switching in column-assist and rack-assist EPS modules.

IC Role / Device Role / Timing Role: Main N-channel high-side switch in three-phase inverter bridge, operating at 10–20 kHz PWM.

Use Value: 2.4 mΩ R_DS(on) limits I²R loss to <1.4 W at 76 A, reducing thermal stress on motor control PCB and enabling compact design.

Use Scenario: Solid-state replacement for mechanical relays in 12 V battery management for start-stop micro-hybrid vehicles.

IC Role / Device Role / Timing Role: Bidirectional load switch controlling battery-to-bus connection during engine cranking and regenerative charging.

Use Value: Integrated body diode with 1.3 V V_SD supports reverse current during regen, eliminating need for external Schottky diode.

DC-DC Converter (48 V–12 V)

Heavy Load Industrial Actuator

Use Scenario: Synchronous rectifier in high-current buck converter supplying 12 V auxiliary power from 48 V mild-hybrid bus.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, commutated at 100–200 kHz with zero-voltage switching.

Use Value: C_{oss eff.(TR)} = 681 pF ensures predictable turn-on timing and low switching loss during hard commutation events.

Use Scenario: Motor starter and brake control in off-highway vehicle hydraulic actuators exposed to ambient >105°C.

IC Role / Device Role / Timing Role: Single-pole double-throw (SPDT) power switch managing dual-direction motor winding energization.

Use Value: 175°C T_J max allows full 100 A rating at case temperatures up to 125°C, eliminating derating in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 1.8 mΩ R_DS(on), 220 A package rating, but 150°C T_J max and no documented repetitive avalanche rating.	Lacks validated E_AR specification; unsuitable for unclamped inductive loads like EPS motor phases.	Select only for purely resistive or clamped inductive switching where avalanche immunity is not required.
ON Semiconductor NTMFS4C09NT1G	40 V, 2.6 mΩ R_DS(on), 175°C T_J, but only 70 A package rating and no AEC-Q101 documentation in public datasheet.	Lower current capacity requires paralleling for 100 A applications; automotive qualification status unconfirmed.	Prefer only for non-safety-critical industrial loads where AEC-Q101 is not mandated.

Compared with STL220N4F7AG and NTMFS4C09NT1G, AUIRFR8403 uniquely combines 100 A package rating, 175°C operation, AEC-Q101 certification, and validated 99 mJ repetitive avalanche energy - making it the only drop-in solution for ASIL-B EPS and start-stop battery switches.

Availability

AUIRFR8403 is available at Aetrix Electronics and suitable for electric power steering (EPS), battery disconnect switches, and 48 V–12 V DC-DC converters requiring stable component supply across automotive production lifecycles.

Supply support for AUIRFR8403 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with core expertise in silicon and wide-bandgap power devices.

AUIRFR8403 belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine compartment and chassis-mounted power systems.

FAQ

What is the maximum allowable gate-to-source voltage for AUIRFR8403?

The absolute maximum V_GS is ±20 V. Operation above ±15 V risks gate oxide degradation, while drive below 4.5 V may result in incomplete turn-on and excessive R_DS(on). Recommended gate drive is 10 V with series resistance ≤2.7 Ω to dampen ringing.

Does AUIRFR8403 require a gate driver IC in automotive applications?

Yes - due to its 66 nC total gate charge and low 1.5 Ω internal gate resistance, a dedicated gate driver (e.g., Infineon 2EDN7524) is required to achieve specified 32 ns rise time and prevent shoot-through in half-bridge configurations used in EPS inverters.

How is thermal performance verified for AUIRFR8403 in D-Pak mounting?

Thermal resistance R_θJC = 1.52°C/W is measured with the device mounted on a 1" square FR-4 PCB with 2 oz. copper and 100% solder mask opening on the drain pad. Performance assumes minimum 10 mm² thermal pad area and reflow profile per IPC-J-STD-020.

Can AUIRFR8403 replace AUIRFU8403 in existing designs?

No - AUIRFU8403 uses I-Pak (TO-220AB) package with vertical lead frame and different thermal path. While electrically identical, D-Pak (AUIRFR8403) has lower R_θJC but requires PCB redesign for thermal pad layout and footprint; mechanical interchange is not supported.

AUIRFR8403 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.1mOhm @ 76A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 99 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3171 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 99W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

AUIRFR8403 FAQ

1.How can I place an order for AUIRFR8403 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFR8403 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFR8403 reliable?

The price and inventory of AUIRFR8403 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFR8403 is usually 5 days.

3.What payment methods are accepted for AUIRFR8403?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFR8403 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFR8403?

AUIRFR8403 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFR8403 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFR8403?

For technical support, including AUIRFR8403 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFR8403 requirements.

6.How does Aetrix verify that AUIRFR8403 is sourced from the original manufacturer or authorized distributors?

All AUIRFR8403 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFR8403 meets industry standards.

7.What is the process for return or replacement of AUIRFR8403?

All AUIRFR8403 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFR8403, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFR8403 part is unused and in its original packaging.

Return procedure for AUIRFR8403:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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