Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies AUIRFR9024N

Part No.:
AUIRFR9024N
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixAUIRFR9024N.pdf
Description:
MOSFET P-CH 55V 11A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,300

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AUIRFR9024N from Infineon is a P-channel automotive-grade HEXFET® Power MOSFET in D-Pak (TO-252AA) package, rated for -55 V VDS, 0.175 Ω RDS(on) at -10 V VGS, and -11 A continuous drain current at 25°C. It operates up to 150°C junction temperature, features full avalanche rating, and is optimized for high-reliability automotive load switching such as body control modules and motor drivers.

For engineers reviewing the AUIRFR9024N datasheet, AUIRFR9024N pinout, AUIRFR9024N application, or AUIRFR9024N equivalent, key selection criteria include its -55 V breakdown voltage, low on-resistance under automotive thermal constraints, fast switching (13 ns td(on), 37 ns tf), repetitive avalanche capability (3.8 mJ), and D-Pak thermal performance (RθJC = 3.3 °C/W).

Technical Context

This device implements a planar P-channel silicon structure with integrated body diode, designed for unidirectional high-side switching in 12 V/24 V automotive systems. Its gate threshold voltage (-2.0 to -4.0 V) enables direct drive from standard CMOS logic, while dynamic dv/dt rating (-10 V/ns) ensures robustness during inductive turn-off transients.

The MOSFET supports repetitive avalanche operation up to Tjmax and delivers 62 mJ single-pulse avalanche energy under defined test conditions (L = 2.8 mH, IAS = -6.6 A). Thermal design leverages low junction-to-case resistance (3.3 °C/W) when mounted on PCBs per AN-994 footprint guidelines.

Key Specifications

ParameterValue and Actual Design Meaning
VDS-55 V - Withstands reverse-biased drain-source voltage up to automotive battery surge levels (e.g., load dump).
RDS(on)0.175 Ω @ VGS = -10 V, ID = -6.6 A - Enables <1.2 W conduction loss at nominal 7 A load current.
ID (continuous)-11 A @ TC = 25°C - Supports sustained current in engine bay-mounted power stages with adequate heatsinking.
tf37 ns - Reduces switching losses in PWM-driven solenoid or lamp dimming circuits operating up to 20 kHz.
EAR3.8 mJ - Allows repeated inductive energy clamping without derating in relay/coil driver protection schemes.
RθJC3.3 °C/W - Enables 11.5 W power dissipation before reaching 150°C junction limit with 38°C case rise.
Qg19 nC - Determines gate driver current requirement (~1.9 mA average for 100 kHz switching at 10 V swing).

Pinout & Package

D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection; standard 3-pin configuration with G–D–S pin order (viewed from top, marking side up, leads down).

Pin/TerminalCircuit RoleDesign Meaning
Gate (G)Control inputReceives negative VGS to turn on; threshold range (-2.0 to -4.0 V) allows compatibility with 3.3 V/5 V microcontroller outputs via level shift.
Drain (D)High-side power outputConnected to load supply rail; electrically and thermally tied to exposed copper pad for low-inductance, high-current return path.
Source (S)Reference nodeCommon return for load current and gate drive reference; must be routed with low impedance to minimize shoot-through risk in half-bridge configurations.

Key Features

FeatureDesign Value
Automotive qualificationAEC-Q101 qualified for under-hood use with guaranteed operation from -55°C to +150°C junction temperature.
Full avalanche ratingRated for repetitive unclamped inductive switching up to Tjmax, eliminating need for external snubbers in solenoid drivers.
Low RDS(on)0.175 Ω enables <1.2 W conduction loss at 7 A, reducing thermal stress in space-constrained BCM modules.
Fast switching13 ns td(on)/37 ns tf minimizes transition losses in 10–20 kHz PWM applications like LED headlight dimming.
Lead-free & RoHSCompliant with automotive environmental standards; compatible with Pb-free reflow profiles per J-STD-020.

Applications

Body Control Module (BCM)Engine Cooling Fan Driver

Use Scenario: Switching 12 V loads including door locks, interior lighting, and window lift motors in centralized vehicle control units.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling load current direction and enabling fail-safe open-circuit shutdown.

Use Value: Low RDS(on) reduces heat generation in densely packed PCBs; avalanche rating handles inductive kickback from motor windings without external protection.

Use Scenario: PWM-controlled 24 V brushless cooling fan in diesel engine compartments with ambient temperatures up to 105°C.

IC Role / Device Role / Timing Role: High-side switching element in half-bridge topology, synchronized with low-side N-MOSFET for bidirectional speed control.

Use Value: 150°C Tj rating and 3.3 °C/W RθJC allow reliable operation without forced air; fast tf enables efficient 15 kHz PWM modulation.

Transmission Solenoid ControlLED Headlight Dimming

Use Scenario: Driving 12 V hydraulic solenoids in automatic transmission valve bodies requiring precise current regulation and fault tolerance.

IC Role / Device Role / Timing Role: Current-regulated high-side switch with integrated body diode for freewheeling during de-energization.

Use Value: Repetitive avalanche energy (3.8 mJ) clamps inductive energy without degradation over >10⁶ cycles; -55 V VDS accommodates battery transients.

Use Scenario: Analog-dimming front LED headlamps using constant-current PWM with minimal EMI and thermal drift.

IC Role / Device Role / Timing Role: High-side current sink modulating LED string current via duty-cycle-controlled switching.

Use Value: Low Qg (19 nC) and fast td(on)/tf reduce gate drive power and enable smooth 100–1000 Hz dimming without visible flicker.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP12PF06VDS = -60 V, RDS(on) = 0.22 Ω @ -10 V, no AEC-Q101 certificationLacks automotive qualification; suitable only for industrial or non-safety-critical automotive subsystemsSelect if cost sensitivity outweighs qualification requirements and thermal margin permits higher RDS(on).
IRF9540NPBFVDS = -100 V, RDS(on) = 0.2 Ω @ -10 V, TO-220 package, not automotive-qualifiedHigher voltage rating but larger footprint and no thermal spec for PCB mount; no avalanche energy ratingChoose only for legacy designs requiring TO-220 mechanical fit; avoid in new automotive designs due to missing qualification and thermal data.

Compared with STP12PF06 and IRF9540NPBF, AUIRFR9024N provides verified automotive reliability, lower on-resistance in compact D-Pak, and documented repetitive avalanche capability-critical for solenoid and motor control where inductive energy management is mandatory.

Availability

AUIRFR9024N is available at Aetrix Electronics and suitable for automotive body control modules, engine cooling fan drivers, transmission solenoid controllers, and LED headlight dimming systems requiring stable component supply across production lifecycles.

Supply support for AUIRFR9024N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

AUIRFR9024N belongs to the HEXFET® Automotive Power MOSFET product line, engineered specifically for high-reliability 12 V/24 V automotive power distribution and load switching applications.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The AUIRFR9024N supports -8 A continuous drain current at TC = 100°C with VGS = -10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D-Pak package under sustained high-temperature operation, and must be validated against actual board layout and airflow conditions.

Is a gate resistor required for safe operation?

Yes-a gate resistor (typically 10–100 Ω) is recommended to dampen ringing and control dV/dt during switching. The device's 19 nC total gate charge and fast 13 ns turn-on delay make it susceptible to oscillation without proper gate drive impedance, especially in high-di/dt inductive load applications.

Can AUIRFR9024N replace AUIRFU9024N in a design?

No-AUIRFR9024N (D-Pak) and AUIRFU9024N (I-Pak) differ in package thermal resistance and mounting geometry. While electrically identical, the D-Pak's lower RθJC (3.3 vs. 50 °C/W for I-Pak PCB mount) and different footprint require PCB redesign and thermal validation before substitution.

Does the body diode support continuous conduction mode?

The integrated body diode is rated for -11 A continuous source current at 25°C, but its forward voltage (-1.6 V at -7.2 A) and reverse recovery characteristics (trr = 47–71 ns) limit use in high-frequency synchronous rectification. It is intended for freewheeling in low-duty-cycle inductive loads-not for sustained bidirectional conduction.

AUIRFR9024N Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tube
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
175mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
19 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
350 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
38W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

AUIRFR9024N FAQ

1.How can I place an order for AUIRFR9024N through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFR9024N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFR9024N reliable?

The price and inventory of AUIRFR9024N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFR9024N is usually 5 days.

3.What payment methods are accepted for AUIRFR9024N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFR9024N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFR9024N?

AUIRFR9024N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFR9024N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFR9024N?

For technical support, including AUIRFR9024N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFR9024N requirements.

6.How does Aetrix verify that AUIRFR9024N is sourced from the original manufacturer or authorized distributors?

All AUIRFR9024N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFR9024N meets industry standards.

7.What is the process for return or replacement of AUIRFR9024N?

All AUIRFR9024N units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFR9024N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFR9024N part is unused and in its original packaging.

Return procedure for AUIRFR9024N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AUIRFR9024N Tags

  • AUIRFR9024N
  • AUIRFR9024N PDF
  • AUIRFR9024N Datasheet
  • AUIRFR9024N Specifications
  • AUIRFR9024N Images
  • Infineon Technologies
  • Infineon Technologies AUIRFR9024N
  • Buy AUIRFR9024N
  • AUIRFR9024N Price
  • AUIRFR9024N Distributor
  • AUIRFR9024N Supplier
  • AUIRFR9024N Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER