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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFS3107-7P

Name: AUIRFS3107-7P
Brand: Infineon Technologies
SKU: AUIRFS3107-7P
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFS3107-7P

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: AUIRFS3107-7P.pdf

Description:: MOSFET N-CH 75V 240A D2PAK

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Product details

Overview

AUIRFS3107-7P from Infineon is an automotive-grade N-channel HEXFET® Power MOSFET in D2PAK-7L package, rated for 75 V V_DS, 2.1 mΩ typ. R_DS(on) at V_GS = 10 V and 160 A, with 175°C maximum junction temperature and 370 W P_D at T_C = 25°C. It delivers ultra-low conduction loss and robust avalanche capability for high-current DC-DC converters and motor control in engine management systems.

For engineers reviewing the AUIRFS3107-7P datasheet, AUIRFS3107-7P pinout, AUIRFS3107-7P application, or AUIRFS3107-7P equivalent, key selection criteria include its 240 A package-limited continuous drain current, 13 V/ns diode recovery dv/dt rating, repetitive avalanche energy (EAR), thermal resistance R_θJC = 0.40 °C/W, and automotive qualification per AEC-Q101.

Technical Context

This device employs advanced trench-gate process technology to achieve silicon-limited 260 A ID at 25°C and package-limited 240 A ID, with fast switching (t_r = 80 ns, t_f = 64 ns) enabled by low gate charge (Q_g = 160–240 nC) and optimized gate resistance (R_G = 2.1 Ω). Its body diode exhibits 52 ns reverse recovery time (t_rr) and 110 nC Q_rr at 25°C under 160 A IF.

The MOSFET supports unclamped inductive switching with single-pulse avalanche energy EAS = 320 mJ (T_J = 25°C) and repetitive avalanche up to T_Jmax, validated via transient thermal impedance modeling and pulse-width-dependent I_AR curves. Junction-to-case thermal resistance is measured at ~90°C and specified as 0.40 °C/W max.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum blocking voltage before breakdown; defines safe operating range in 48 V automotive systems.
R_DS(on) typ.	2.1 mΩ @ V_GS = 10 V, I_D = 160 A - Enables <1.7 W conduction loss at 160 A, critical for high-efficiency traction inverters.
I_D (Package)	240 A @ T_C = 25°C - Package-limited continuous current; sets PCB copper and heatsink sizing requirements.
EAS	320 mJ - Single-pulse avalanche energy limit; determines safe inductive turn-off margin without external snubbers.
R_θJC	0.40 °C/W max - Junction-to-case thermal resistance; enables direct mounting to cold plates with predictable thermal drop.
t_rr	52 ns @ T_J = 25°C - Body diode reverse recovery time; constrains maximum switching frequency in synchronous rectification.
Q_gd	57 nC - Gate-to-drain charge; governs Miller plateau duration and susceptibility to false turn-on during high dv/dt events.

Pinout & Package

D2PAK-7L (TO-263-7) package with exposed drain pad for enhanced thermal performance and 7 terminals: 3 parallel source pins (S1–S3), 3 parallel gate pins (G1–G3), and 1 drain pad (D). Designed for surface-mount assembly on thermally optimized PCBs with ≥1"² copper area.

Pin/Terminal	Circuit Role	Design Meaning
G1, G2, G3	Gate inputs	Three parallel gate terminals reduce gate loop inductance and improve switching consistency in high-di/dt applications.
S1, S2, S3	Source returns	Three dedicated source pins minimize source inductance and stabilize gate drive reference during hard switching.
D (Pad)	Drain connection	Exposed copper drain pad provides primary thermal path to heatsink; requires full-solder coverage for R_θJC compliance.

Key Features

Feature	Design Value
175°C operating junction temperature	Enables reliable operation in under-hood environments (e.g., transmission control units) without derating at ambient >125°C.
Repetitive avalanche rated	Allows repeated unclamped inductive switching within defined pulse width and duty cycle limits-reducing need for external clamping circuits.
Ultra-low R_DS(on)	2.1 mΩ typ. reduces I²R losses by >30% vs. legacy 3.5 mΩ D2PAK MOSFETs, directly improving system efficiency in 48 V mild-hybrid architectures.
Enhanced dV/dT and dI/dT capability	13 V/ns diode recovery dv/dt and 1420 A/µs di/dt rating ensure stable commutation in high-speed motor drives with minimal shoot-through risk.

Applications

Engine Start-Stop Control

48 V Mild-Hybrid DC-DC Converter

Use Scenario: High-current solenoid and starter relay switching during automatic engine restart after coasting.

IC Role / Device Role / Timing Role: Main power switch controlling 200+ A cranking loads with sub-100 µs turn-on to meet ISO 21848 transient response requirements.

Use Value: 240 A package-limited current and 175°C T_Jmax prevent thermal shutdown during repeated start cycles in hot ambient conditions.

Use Scenario: Primary-side synchronous rectifier in bi-directional buck-boost converter linking 12 V and 48 V domains.

IC Role / Device Role / Timing Role: Low-side switching element handling 160 A continuous current with fast fall time (64 ns) to minimize dead-time losses.

Use Value: 2.1 mΩ R_DS(on) cuts conduction loss by ~1.3 W vs. 3.0 mΩ alternatives, increasing converter efficiency from 94.2% to 95.1% at 5 kW.

Electric Power Steering (EPS) Inverter

Onboard Charger (OBC) Input Stage

Use Scenario: Half-bridge leg in 3-phase inverter driving brushless motor for steering assist torque generation.

IC Role / Device Role / Timing Role: High-side and low-side switching device with tight gate charge matching (Q_gd/Q_gs ratio) to minimize cross-conduction risk.

Use Value: Matched Q_gd = 57 nC and Q_gs = 38 nC enable precise PWM timing control, reducing shoot-through probability below 0.001% per switching event.

Use Scenario: AC input rectification and PFC switching stage in 6.6 kW OBC for BEVs.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC, operating at 100 kHz with 160 A peak current.

Use Value: Repetitive avalanche rating allows safe operation during line-voltage surges without additional overvoltage clamping, simplifying BOM.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4LF8AG	75 V, 2.2 mΩ R_DS(on), 220 A I_D, DFN8 5x6 mm package, no exposed drain pad	Limited to ≤150 A continuous due to higher R_θJA; unsuitable for case-temperature >100°C environments	Select when board space is constrained and thermal interface to heatsink is impractical.
IXTH30N75L2	75 V, 2.4 mΩ R_DS(on), 30 A I_D, TO-247 package, 150°C T_Jmax	Lower current rating and lower thermal robustness; requires larger heatsink for same power dissipation	Select only for legacy TO-247 footprint compatibility where D2PAK-7L re-layout is not feasible.

Compared with STL220N4LF8AG and IXTH30N75L2, AUIRFS3107-7P uniquely combines 240 A package-limited current, 0.40 °C/W R_θJC, and 175°C T_Jmax-making it the only option qualified for sustained 200 A operation in engine bay locations with minimal heatsinking.

Availability

AUIRFS3107-7P is available at Aetrix Electronics and suitable for engine control units, 48 V mild-hybrid converters, electric power steering inverters, and onboard chargers requiring stable component supply across automotive production lifecycles.

Supply support for AUIRFS3107-7P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

AUIRFS3107-7P belongs to the automotive-qualified HEXFET® Power MOSFET product line, designed specifically for high-reliability, high-current switching in under-hood and chassis-mounted power systems.

FAQ

What is the maximum continuous drain current for AUIRFS3107-7P at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 190 A (silicon-limited), as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures, and must be verified against actual PCB thermal design using R_θJC = 0.40 °C/W.

Does AUIRFS3107-7P support paralleling for higher current capacity?

Yes-its matched gate threshold voltage (V_GS(th) = 2.0–4.0 V) and low R_DS(on) tolerance (2.1–2.6 mΩ) enable stable current sharing when paralleled. However, layout symmetry (equal gate and source inductance per device) and individual gate resistors (≥2.7 Ω) are required to suppress oscillation and ensure balanced dynamic current distribution.

Is the body diode of AUIRFS3107-7P suitable for synchronous rectification?

Yes-the body diode has t_rr = 52 ns and Q_rr = 110 nC at 25°C, enabling use in synchronous rectification up to ~150 kHz in 48 V systems. At 125°C, t_rr increases to 63 ns and Q_rr to 160 nC, requiring careful dead-time optimization to avoid shoot-through in high-frequency PFC stages.

What is the recommended gate resistor value for hard-switching applications?

A gate resistor of 2.7 Ω is used in the datasheet's switching characterization (td(off) = 100 ns, tf = 64 ns). For hard-switching at 100 kHz in motor drives, 2.2–3.3 Ω balances switching loss reduction and EMI control; values <2.0 Ω increase risk of gate ringing and false turn-on due to Q_gd-driven Miller feedback.

AUIRFS3107-7P Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 240A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.6mOhm @ 160A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 240 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9200 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 370W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK (7-Lead)

AUIRFS3107-7P FAQ

1.How can I place an order for AUIRFS3107-7P through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFS3107-7P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFS3107-7P reliable?

The price and inventory of AUIRFS3107-7P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFS3107-7P is usually 5 days.

3.What payment methods are accepted for AUIRFS3107-7P?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFS3107-7P transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFS3107-7P?

AUIRFS3107-7P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFS3107-7P order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFS3107-7P?

For technical support, including AUIRFS3107-7P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFS3107-7P requirements.

6.How does Aetrix verify that AUIRFS3107-7P is sourced from the original manufacturer or authorized distributors?

All AUIRFS3107-7P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFS3107-7P meets industry standards.

7.What is the process for return or replacement of AUIRFS3107-7P?

All AUIRFS3107-7P units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFS3107-7P, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFS3107-7P part is unused and in its original packaging.

Return procedure for AUIRFS3107-7P:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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