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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFS3107TRL

Name: AUIRFS3107TRL
Brand: Infineon Technologies
SKU: AUIRFS3107TRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFS3107TRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AUIRFS3107TRL.pdf

Description:: MOSFET N-CH 75V 195A D2PAK

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Product details

Overview

AUIRFS3107TRL from Infineon is an automotive-grade N-channel D2PAK (TO-263AB) HEXFET® Power MOSFET with 75V V_BRDSS, 2.5 mΩ typ. R_DS(on) at V_GS = 10 V and 140 A, 175°C maximum junction temperature, and 370 W P_D at T_C = 25°C - deployed in high-current DC-DC converters and motor control inverters for EV traction inverters and 48V mild-hybrid systems.

For engineers reviewing the AUIRFS3107TRL datasheet, AUIRFS3107TRL pinout, AUIRFS3107TRL application, or AUIRFS3107TRL equivalent, key selection criteria include silicon-limited 230 A continuous drain current, 140 A switching-rated ID, 160 nC total gate charge, 54 nC Q_gd, and 0.40 °C/W R_θJC thermal resistance under board-mounted conditions.

Technical Context

This device uses Infineon's advanced trench-gate process to achieve ultra-low on-resistance per die area while maintaining robust dV/dt (14 V/ns) and dI/dt capability. Its body diode supports fast recovery (t_rr = 54 ns at T_J = 25°C) and high I_RRM (3.6 A), enabling efficient synchronous rectification and unclamped inductive switching.

The MOSFET is qualified to AEC-Q101 standards and rated for repetitive avalanche energy up to E_AR = 300 mJ at T_J = 25°C. Gate threshold voltage (2.0–4.0 V) and forward transconductance (230 S) are specified across –55°C to +175°C, supporting stable operation in engine bay and powertrain environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BRDSS	75 V - Withstands 75 V drain-source blocking voltage before breakdown, suitable for 48V automotive bus and 60V transient clamping.
R_DS(on) typ.	2.5 mΩ @ V_GS = 10 V, I_D = 140 A - Enables <1.5 W conduction loss at 140 A, critical for high-efficiency traction inverters.
I_D (Silicon Limited)	230 A @ T_C = 25°C - Maximum continuous current limited by silicon thermal capacity, not package leads.
Q_g max.	240 nC - Determines gate driver power requirement and switching speed; impacts turn-on/turn-off delay (19 ns / 99 ns).
R_θJC	0.40 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting with predictable thermal budgeting.
t_rr	54 ns @ T_J = 25°C - Fast body diode recovery reduces switching losses and EMI in hard-switched topologies.
E_AS	300 mJ - Single-pulse avalanche energy rating allows safe operation during inductive load transients without external snubbers.

Pinout & Package

D2PAK (TO-263AB) surface-mount package with exposed drain pad for thermal and electrical performance. Three terminals: Drain (D), Source (S), Gate (G). Mounting requires FR-4 PCB with recommended footprint per Infineon AN-994.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main high-side current path	Connected to heatsink via exposed copper pad; carries full load current and dissipates heat directly to thermal mass.
Source (S)	Reference node for gate drive and current sensing	Low-inductance return path; used for shunt-based current monitoring and gate driver reference in half-bridge configurations.
Gate (G)	Control input for channel modulation	High-impedance CMOS-compatible input requiring 10 V for full enhancement; gate resistance 1.2 Ω limits ringing and EMI.

Key Features

Feature	Design Value
175°C operating junction temperature	Enables placement near hot zones (e.g., engine compartment, inverter housing) without derating or forced cooling.
Repetitive avalanche rated	Supports unclamped inductive switching in motor drives without external protection, reducing BOM count and layout complexity.
Ultra-low R_DS(on) density	Delivers 2.5 mΩ on-resistance in D2PAK footprint - 30% lower than legacy 75V automotive MOSFETs of same package size.
Enhanced dV/dt immunity	14 V/ns rated dv/dt prevents false turn-on during high-speed switching in noisy powertrain environments.
Lead-free & RoHS compliant	Meets automotive environmental compliance requirements including ELV Directive and IMDS reporting obligations.

Applications

Automotive Traction Inverter

48V Mild-Hybrid DC-DC Converter

Use Scenario: High-power bidirectional DC-AC conversion in electric vehicle main inverter modules.

IC Role / Device Role / Timing Role: Low-side switching element in three-phase IGBT/MOSFET half-bridge leg, handling 140–230 A peak phase current.

Use Value: 2.5 mΩ R_DS(on) reduces conduction loss by >25% vs. comparable 75V MOSFETs, extending range and lowering thermal management cost.

Use Scenario: Primary-side synchronous rectifier in 48V–12V bi-directional buck-boost converter for start-stop and regenerative braking.

IC Role / Device Role / Timing Role: High-current, high-frequency switching transistor operating at 100–200 kHz with tight dead-time control.

Use Value: 160 nC Q_g and 54 nC Q_gd enable fast, low-loss transitions, improving efficiency above 96% at 5 kW output.

Engine Control Unit (ECU) Load Driver

Electric Power Steering (EPS) Motor Driver

Use Scenario: High-side or low-side driving of solenoids, fuel injectors, and HVAC actuators in engine management systems.

IC Role / Device Role / Timing Role: Robust load switch with integrated avalanche capability, replacing discrete protection components.

Use Value: 300 mJ E_AS eliminates need for external TVS or snubber circuits during inductive kickback, simplifying PCB layout and validation.

Use Scenario: Phase-leg switching in 3-phase brushless DC motor driver for steering assist torque generation.

IC Role / Device Role / Timing Role: High-reliability power stage component operating continuously at 125°C ambient with 175°C T_J margin.

Use Value: AEC-Q101 qualification and 0.40 °C/W R_θJC ensure long-term reliability under cyclic thermal stress and vibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N75F7	75 V, 2.2 mΩ typ. R_DS(on), 220 A I_D, D2PAK; higher Q_g (270 nC), no AEC-Q101 documentation publicly available.	Lacks documented automotive qualification; requires additional system-level qualification for safety-critical EPS or inverter use.	Select only if non-safety-critical and gate drive can support higher Q_g.
IXFH75N75X3	75 V, 3.2 mΩ typ. R_DS(on), 180 A I_D, TO-247; higher R_DS(on), larger package, 150°C T_J max.	Requires mechanical redesign due to TO-247 footprint; unsuitable for space-constrained D2PAK layouts.	Consider only when higher avalanche ruggedness (E_AS = 1.2 J) outweighs size and thermal constraints.

Compared with STL220N75F7 and IXFH75N75X3, AUIRFS3107TRL uniquely combines AEC-Q101 qualification, D2PAK form factor, 2.5 mΩ on-resistance, and 175°C operation - making it the only drop-in solution for production automotive inverters and EPS modules requiring zero requalification.

Availability

AUIRFS3107TRL is available at Aetrix Electronics and suitable for automotive traction inverters, 48V mild-hybrid DC-DC converters, and electric power steering motor drivers requiring stable component supply across multi-year vehicle production cycles.

Supply support for AUIRFS3107TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensors for automotive, industrial, and renewable energy markets.

The AUIRFS3107 series belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine control, electrified powertrain, and ADAS subsystems.

FAQ

What is the maximum continuous drain current for AUIRFS3107TRL at 100°C case temperature?

At T_C = 100°C, the silicon-limited continuous drain current is 160 A with V_GS = 10 V. This value reflects thermal derating due to reduced channel mobility and increased R_DS(on) at elevated temperatures, and is validated per Infineon's 2017 datasheet revision.

Does AUIRFS3107TRL support gate drive voltages below 10 V?

Yes - gate threshold voltage ranges from 2.0 V to 4.0 V, enabling partial enhancement at 4.5–5 V. However, full conduction (R_DS(on) ≤ 3.0 mΩ) requires ≥10 V V_GS; operation at 5 V yields ~12 mΩ, increasing conduction loss significantly.

Is the body diode in AUIRFS3107TRL optimized for synchronous rectification?

Yes - its body diode exhibits t_rr = 54 ns at 25°C and Q_rr = 103 nC, with soft recovery characteristics confirmed in Figures 17–20 of the datasheet. These parameters support efficient synchronous rectification in high-frequency DC-DC topologies up to 200 kHz.

What is the recommended PCB footprint and thermal pad layout for AUIRFS3107TRL?

Infineon specifies a 16 mm × 10 mm copper thermal pad with 8–12 thermal vias (0.3 mm diameter, 0.8 mm pitch) connecting to inner ground/power planes. Full layout guidance, including solder mask opening and stencil design, is provided in Application Note AN-994 (Rev. 2.0, 2017).

AUIRFS3107TRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 140A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 240 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9370 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 370W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

AUIRFS3107TRL FAQ

1.How can I place an order for AUIRFS3107TRL through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFS3107TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFS3107TRL reliable?

The price and inventory of AUIRFS3107TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFS3107TRL is usually 5 days.

3.What payment methods are accepted for AUIRFS3107TRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFS3107TRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFS3107TRL?

AUIRFS3107TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFS3107TRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFS3107TRL?

For technical support, including AUIRFS3107TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFS3107TRL requirements.

6.How does Aetrix verify that AUIRFS3107TRL is sourced from the original manufacturer or authorized distributors?

All AUIRFS3107TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFS3107TRL meets industry standards.

7.What is the process for return or replacement of AUIRFS3107TRL?

All AUIRFS3107TRL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFS3107TRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFS3107TRL part is unused and in its original packaging.

Return procedure for AUIRFS3107TRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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