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Infineon Technologies AUIRFS3306

Part No.:
AUIRFS3306
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixAUIRFS3306.pdf
Description:
MOSFET N-CH 60V 120A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,893

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Product details

Overview

AUIRFS3306 from Infineon is an automotive-grade N-channel HEXFET® Power MOSFET in D2-Pak (TO-263AB) package, rated for 60V VDS, 3.3mΩ typ. RDS(on) at VGS = 10V and 75A, 175°C maximum junction temperature, and qualified to AEC-Q101 standards. It delivers high-current switching in engine control units, DC-DC converters, and motor drivers where low conduction loss and robust avalanche capability are critical.

For engineers reviewing the AUIRFS3306 datasheet, AUIRFS3306 pinout, AUIRFS3306 application, or AUIRFS3306 equivalent, key selection criteria include its 120A package-limited continuous drain current, 184mJ single-pulse avalanche energy, 85nC total gate charge, and thermal resistance of 0.65°C/W junction-to-case - all essential for thermal design and reliability validation in automotive power stages.

Technical Context

This MOSFET employs advanced silicon process technology to achieve ultra-low on-resistance per die area while maintaining fast switching (tr = 76ns, tf = 77ns) and high di/dt tolerance (1400A/µs). Its body diode supports synchronous rectification with 31ns reverse recovery time and 34nC Qrr at TJ = 25°C.

The device is characterized for unclamped inductive switching up to TJmax, with repetitive avalanche energy validated across pulse widths (1µs–100ms) and starting junction temperatures (25°C–150°C). Thermal performance is specified under board-mounted, still-air conditions with 1"² FR-4 PCB and 25°C ambient.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 60V - Maximum blocking voltage before breakdown; sets upper limit for DC-link or battery-side switching in 48V automotive systems.
RDS(on) typ. 3.3mΩ @ VGS = 10V, ID = 75A - Enables <1W conduction loss at 120A, critical for high-efficiency traction inverters and starter generators.
ID (Package) 120A @ TC = 25°C - Determined by bond wire and leadframe thermal limits; defines practical continuous current in PCB-mounted applications.
EAS 184mJ - Single-pulse avalanche energy at TJ = 25°C; supports robustness against inductive kickback in solenoid and relay drivers.
Qg 85nC max - Total gate charge required for full turn-on; directly impacts gate driver sizing and switching loss in 20–100kHz PWM designs.
RθJC 0.65°C/W - Junction-to-case thermal resistance; enables accurate junction temperature estimation when mounted on heatsink via case tab.
VSD 1.3V max @ IS = 75A, TJ = 25°C - Forward voltage of integrated body diode; affects freewheeling losses in half-bridge configurations.

Pinout & Package

Package: D2-Pak (TO-263AB), surface-mount with isolated metal tab (Drain-connected), 3-pin configuration. Mounting requires thermal pad soldering to copper pour for optimal heat transfer.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Control terminal; accepts 10V logic-level drive; internal gate resistance 0.7Ω limits ringing but requires adequate driver current (≥2A peak).
2 (D) Drain High-side power node; electrically connected to exposed metal tab; must be isolated from heatsink unless system ground referenced.
3 (S) Source Power return path; serves as local reference for gate drive; low-inductance layout essential to minimize switching overshoot.

Key Features

Feature Design Value
175°C operating junction temperature Enables operation in under-hood environments (e.g., transmission control modules) without derating below 125°C ambient.
Repetitive avalanche rating Validated up to TJmax with pulse-width and duty-cycle constraints; eliminates need for external snubbers in inductive load switching.
Ultra-low RDS(on) density 3.3mΩ at 75A reflects optimized trench-gate silicon; reduces die size and cost versus legacy planar MOSFETs with comparable specs.
Lead-free, RoHS-compliant construction Meets automotive ELV Directive requirements; compatible with Pb-free reflow profiles (peak 260°C, 10s).

Applications

Engine Control Unit (ECU) Fuel Injector Driver 48V Mild Hybrid DC-DC Converter

Use Scenario: High-speed switching of solenoid fuel injectors in gasoline direct injection systems with 12V–48V supply rails.

IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current; operates in hard-switched mode at 1–10Hz with <100ns turn-off to prevent dribble fueling.

Use Value: 3.3mΩ RDS(on) minimizes coil hold power loss; 184mJ EAS absorbs inductive flyback without clamping diodes.

Use Scenario: Primary-side synchronous rectifier in bidirectional 48V–12V buck-boost converter for start-stop and regenerative braking energy recovery.

IC Role / Device Role / Timing Role: High-current, high-frequency (50–100kHz) power switch in phase-shifted full-bridge topology; body diode used for zero-voltage switching (ZVS) assist.

Use Value: 31ns trr and 34nC Qrr reduce dead-time losses; 175°C rating ensures reliability during transient overload events.

Electric Power Steering (EPS) Motor Phase Leg Automotive HVAC Blower Motor Inverter

Use Scenario: Half-bridge leg driving 3-phase brushless motor in EPS systems requiring >100A peak phase current and ASIL-B compliance.

IC Role / Device Role / Timing Role: High-side or low-side switch in 3-phase inverter; subjected to repetitive unclamped inductive switching during motor commutation.

Use Value: Repetitive avalanche capability validated per AN-1005 allows safe operation during fault transients; 120A package limit matches typical EPS phase current demands.

Use Scenario: PWM-controlled blower motor driver in cabin climate control systems, operating continuously at 25–100% duty cycle with variable speed feedback.

IC Role / Device Role / Timing Role: Low-side switch in single-phase inverter; handles continuous 60–90A motor current with minimal thermal rise on 2oz copper PCB.

Use Value: 0.65°C/W RθJC enables direct heatsink mounting; 175°C TJ rating prevents thermal shutdown during sustained high-load operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N6F7 60V, 2.2mΩ typ. RDS(on), 220A package limit, DFN8 5x6 package - lower RDS(on) but no exposed drain tab; junction-to-case thermal resistance not specified. Preferred for space-constrained, low-inductance layouts where PCB thermal vias replace heatsinks; unsuitable for high-power discrete heatsinking. Select when board-level thermal management via copper pour suffices and footprint size is critical; avoid if mechanical heatsink mounting is required.
IRFB4115PBF 150V, 5.8mΩ typ. RDS(on), TO-220 package, 110A ID - higher voltage rating and larger package, but higher on-resistance and no AEC-Q101 qualification. Used in industrial 100–120V AC-fed systems; lacks automotive qualification and 175°C rating, limiting under-hood use. Choose only for non-automotive 150V applications where qualification and high-temperature operation are not required; not a drop-in replacement.

Compared with STL220N6F7 and IRFB4115PBF, AUIRFS3306 uniquely balances automotive qualification, 60V/3.3mΩ performance, D2-Pak thermal interface, and validated repetitive avalanche - making it the only option among the three qualified for ASIL-B-relevant power stages with heatsink integration.

Availability

AUIRFS3306 is available at Aetrix Electronics and suitable for engine control units, 48V DC-DC converters, electric power steering systems, and HVAC blower motor inverters requiring stable component supply across automotive production lifecycles.

Supply support for AUIRFS3306 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to IATF 16949.

AUIRFS3306 belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, designed specifically for high-reliability, high-current switching in engine, transmission, and chassis control systems operating up to 175°C junction temperature.

FAQ

What is the maximum continuous drain current for AUIRFS3306 at 100°C case temperature?

The maximum continuous drain current at TC = 100°C is 110A (silicon-limited), as specified in the Absolute Maximum Ratings table. This value accounts for reduced channel conductivity and increased RDS(on) at elevated temperature, and assumes proper PCB copper area and airflow per Infineon's AN-994 mounting guidelines.

Is AUIRFS3306 suitable for synchronous rectification in a 48V buck converter?

Yes - its 1.3V VSD body diode forward voltage, 31ns reverse recovery time, and 34nC Qrr enable efficient synchronous rectification at 50–100kHz. However, external gate control is required since the body diode cannot be actively turned off; pairing with a complementary low-side MOSFET is necessary for full synchronous operation.

Does AUIRFS3306 require a gate resistor for reliable switching?

Yes - a gate resistor (typically 2.7Ω–10Ω) is required to dampen ringing caused by gate loop inductance and internal 0.7Ω gate resistance. The datasheet specifies switching times (td(on), tr) with RG = 2.7Ω; omitting it risks shoot-through, voltage overshoot, and gate oxide stress during hard switching.

How is the 184mJ single-pulse avalanche energy tested and validated?

EAS is measured using the unclamped inductive switching (UIS) test circuit in Figure 22a: L = 0.04mH, RG = 25Ω, IAS = 96A, VGS = 10V, starting TJ = 25°C. Energy is calculated as ∫v(t)·i(t)dt during avalanche, and failure is defined as permanent parametric shift exceeding limits after 100 pulses.

AUIRFS3306 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4.2mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:
4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:
125 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4520 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
230W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3

AUIRFS3306 FAQ

1.How can I place an order for AUIRFS3306 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFS3306 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFS3306 reliable?

The price and inventory of AUIRFS3306 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFS3306 is usually 5 days.

3.What payment methods are accepted for AUIRFS3306?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFS3306 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFS3306?

AUIRFS3306 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFS3306 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFS3306?

For technical support, including AUIRFS3306 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFS3306 requirements.

6.How does Aetrix verify that AUIRFS3306 is sourced from the original manufacturer or authorized distributors?

All AUIRFS3306 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFS3306 meets industry standards.

7.What is the process for return or replacement of AUIRFS3306?

All AUIRFS3306 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFS3306, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFS3306 part is unused and in its original packaging.

Return procedure for AUIRFS3306:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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