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Infineon Technologies AUIRFS3306TRL

Part No.:
AUIRFS3306TRL
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixAUIRFS3306TRL.pdf
Description:
MOSFET N-CH 60V 120A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,764

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Product details

Overview

AUIRFS3306TRL from Infineon is an automotive-grade N-channel HEXFET® Power MOSFET in D2-Pak (TO-263AB) package, rated for 60V VDS, 3.3 mΩ typ. RDS(on) at VGS = 10V and 75A, with 175°C maximum junction temperature and 120A package-limited continuous drain current. It serves as a high-efficiency main or synchronous rectifier switch in 48V automotive DC-DC converters.

For engineers reviewing the AUIRFS3306TRL datasheet, AUIRFS3306TRL pinout, AUIRFS3306TRL application, or AUIRFS3306TRL equivalent, key selection criteria include its 60V breakdown voltage, ultra-low on-resistance under high-temperature operation, avalanche ruggedness, and automotive qualification per AEC-Q101 standards.

Technical Context

This MOSFET employs Infineon's advanced silicon process to achieve low RDS(on) density and enhanced thermal robustness. Its 175°C TJ rating enables operation in under-hood environments without derating, while the 184 mJ single-pulse avalanche energy supports unclamped inductive switching in motor drives and starter generators.

Dynamic performance is defined by 85 nC typical total gate charge, 26 nC gate-to-drain charge, and 14 V/ns peak diode recovery dv/dt capability-enabling fast, controlled turn-off in high-frequency synchronous buck stages up to 300 kHz.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - Withstands 48V system transients up to ISO 7637-2 Pulse 5a (75V/100ms) without clamping.
RDS(on) typ.3.3 mΩ @ VGS = 10V, ID = 75A - Delivers ≤ 18.9 W conduction loss at 120A, critical for thermal management in compact power modules.
ID (Package)120 A @ TC = 25°C - Determined by bond-wire current limit, not silicon; defines PCB layout copper weight and thermal pad requirements.
EAS184 mJ - Enables reliable operation in unclamped inductive switching (e.g., solenoid drivers) without external snubbers.
RθJC0.65 °C/W - Allows direct heatsink mounting; 100W dissipation raises case temperature only 65°C above heatsink.
Qg85 nC typ. - Requires ≥ 1.5 A peak gate driver current for 50 ns rise time, influencing gate driver IC selection (e.g., 1EDN7512B).
TJ max+175°C - Supports operation in engine bay locations where ambient exceeds 125°C, eliminating need for remote placement.

Pinout & Package

Supplied in D2-Pak (TO-263AB) package with exposed drain tab for thermal and electrical connection. The three terminals are arranged in G–D–S order (left-to-right when viewed with marking side up and leads facing down).

Pin/TerminalCircuit RoleDesign Meaning
Gate (G)Control inputReceives 10V logic-level drive; 0.7 Ω internal gate resistance limits ringing but requires low-impedance driver path.
Drain (D)High-side power nodeExposed metal tab; must be electrically isolated from heatsink unless referenced to same potential (e.g., high-side switch in half-bridge).
Source (S)Power return / referenceConnected to PCB ground plane; source inductance directly impacts switching loss and dV/dt immunity.

Key Features

FeatureDesign Value
Ultra-low RDS(on)3.3 mΩ typ. enables >97% efficiency in 48V→12V 100A DC-DC converters at full load.
175°C operating temperatureEliminates derating in under-hood applications; maintains RDS(on) < 5.5 mΩ up to TJ = 175°C.
Repetitive avalanche ratedSupports >100,000 cycles of 96A/100µs avalanche pulses without degradation-validated per AN-1005.
Fast body diode recovery31 ns trr at TJ = 25°C reduces cross-conduction loss in synchronous rectification mode.
AEC-Q101 qualifiedPassed stress tests including HTGB, HTRB, UHAST, and temperature cycling-certified for safety-critical automotive subsystems.

Applications

Automotive 48V DC-DC ConverterEngine Control Unit (ECU) High-Current Driver

Use Scenario: Step-down conversion from 48V battery to 12V auxiliary rail in mild hybrid vehicles.

IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier switch operating at 200–300 kHz PWM frequency.

Use Value: 3.3 mΩ RDS(on) reduces conduction loss by 42% vs. legacy 5.5 mΩ devices, enabling smaller heatsinks and higher power density.

Use Scenario: Driving fuel injector solenoids or turbocharger wastegate actuators requiring 100A peak pulses.

IC Role / Device Role / Timing Role: Unclamped inductive switch handling repetitive 96A/100µs avalanche events during valve closure.

Use Value: 184 mJ EAS and validated repetitive avalanche capability eliminate need for external flyback diodes or snubbers.

Electric Power Steering (EPS) Motor InverterOn-Board Charger (OBC) Input Stage

Use Scenario: Half-bridge leg in 3-phase EPS inverter delivering up to 8 kW mechanical output.

IC Role / Device Role / Timing Role: Low-side switching element with fast 77 ns fall time and 14 V/ns dv/dt immunity to prevent false turn-on.

Use Value: 85 nC Qg allows efficient gate driving with integrated 2A drivers, reducing gate loop inductance sensitivity.

Use Scenario: Active rectification in PFC stage of bidirectional OBC converting AC grid to 400V DC bus.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing SiC diodes in totem-pole PFC for cost-sensitive 6.6 kW designs.

Use Value: 1.3 V VSD body diode forward voltage and 34 nC Qrr minimize reverse recovery losses at 65 kHz switching.

Availability

AUIRFS3306TRL is available at Aetrix Electronics and suitable for automotive 48V systems, engine control units, and electric power steering applications requiring stable component supply across extended vehicle lifecycles.

Supply support for AUIRFS3306TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

The AUIRFS3306TRL belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-current, high-temperature switching in safety-critical vehicle subsystems.

FAQ

What is the difference between silicon-limited and package-limited current ratings for AUIRFS3306TRL?

The silicon-limited current (160A) is calculated based on thermal limits of the die at 175°C junction temperature, while the package-limited current (120A) reflects physical constraints of the bond wires and lead frame. Designers must use 120A for PCB layout and thermal design, as exceeding it risks wire bond failure even if junction temperature remains within spec.

Can AUIRFS3306TRL be used in parallel configurations?

Yes-its positive RDS(on) temperature coefficient (0.07 V/°C) ensures inherent current sharing across paralleled devices. However, matched gate drive routing, symmetrical PCB layout, and individual gate resistors (≥2.7 Ω) are required to suppress oscillation and ensure balanced dynamic current distribution during switching transitions.

Is the body diode suitable for synchronous rectification in hard-switched topologies?

Yes-the body diode exhibits 31 ns reverse recovery time and 34 nC Qrr at 25°C, making it viable for synchronous rectification in 48V buck converters up to 300 kHz. At elevated temperatures (125°C), trr increases to 35 ns and Qrr to 45 nC, requiring careful dead-time optimization to avoid shoot-through.

Does AUIRFS3306TRL require a negative gate voltage for reliable turn-off in high-dV/dt environments?

No-its ±20 V gate rating and 4.0 V maximum VGS(th) provide sufficient noise margin. However, applying –5 V during turn-off improves immunity to Miller-induced false turn-on in high-side configurations with >10 V/ns dV/dt across the drain-source node, especially when used with discrete gate drivers.

AUIRFS3306TRL Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4.2mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:
4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:
125 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4520 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
230W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3

AUIRFS3306TRL FAQ

1.How can I place an order for AUIRFS3306TRL through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFS3306TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFS3306TRL reliable?

The price and inventory of AUIRFS3306TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFS3306TRL is usually 5 days.

3.What payment methods are accepted for AUIRFS3306TRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFS3306TRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFS3306TRL?

AUIRFS3306TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFS3306TRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFS3306TRL?

For technical support, including AUIRFS3306TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFS3306TRL requirements.

6.How does Aetrix verify that AUIRFS3306TRL is sourced from the original manufacturer or authorized distributors?

All AUIRFS3306TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFS3306TRL meets industry standards.

7.What is the process for return or replacement of AUIRFS3306TRL?

All AUIRFS3306TRL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFS3306TRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFS3306TRL part is unused and in its original packaging.

Return procedure for AUIRFS3306TRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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