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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFS4010

Name: AUIRFS4010
Brand: Infineon Technologies
SKU: AUIRFS4010
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFS4010

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AUIRFS4010.pdf

Description:: MOSFET N-CH 100V 180A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRFS4010 from Infineon is an automotive-grade N-channel D2Pak (TO-263AB) HEXFET® Power MOSFET with 100 V V(BR)DSS, 3.9 mΩ typ. RDS(on) at VGS = 10 V and ID = 106 A, 175°C maximum junction temperature, and 375 W PD @ TC = 25°C - deployed in high-current DC-DC converters and motor control stages of engine management systems.

For engineers reviewing the AUIRFS4010 datasheet, AUIRFS4010 pinout, AUIRFS4010 application, or AUIRFS4010 equivalent, this page delivers verified thermal, switching, avalanche, and diode recovery parameters - critical for automotive power stage reliability validation, SOA margining, and gate drive loop design.

Technical Context

This MOSFET employs Infineon's advanced planar HEXFET process to achieve ultra-low on-resistance per die area while sustaining 175°C continuous operation. Its 143 nC typical total gate charge and 50 nC gate-to-drain charge support fast switching with controlled dv/dt up to 31 V/ns under specified di/dt conditions.

The device integrates a robust body diode rated for 106 A continuous source current and 72 ns reverse recovery time at TJ = 25°C, enabling reliable synchronous rectification and unclamped inductive switching. Repetitive avalanche capability is validated up to Tjmax with EAS = 318 mJ (single-pulse, thermally limited).

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	100 V - Withstands 100 V drain-source blocking voltage before avalanche onset; ensures compatibility with 48 V automotive bus and 12 V/24 V system transients.
RDS(on) typ.	3.9 mΩ @ VGS = 10 V, ID = 106 A - Enables <1.1 W conduction loss at 100 A, reducing heatsink requirements in high-efficiency traction inverters.
ID @ TC = 25°C	180 A - Supports peak load currents in starter-generator and electric power steering without derating under board-mounted conditions.
Qg typ.	143 nC - Determines gate driver current demand; requires ≥1.5 A average drive strength for 100 ns turn-on with 2.7 Ω RG.
trr	72 ns @ TJ = 25°C, IF = 106 A - Limits diode recovery losses during hard-switched transitions in buck converters and H-bridge motor drives.
RθJC	0.40 °C/W - Enables direct thermal coupling to cold plates; allows 375 W dissipation with ≤150°C case-to-junction delta at steady state.
EAS	318 mJ - Specifies single-pulse avalanche energy limit; defines safe unclamped inductive switching margin in fault-tolerant motor controllers.

Pinout & Package

D2Pak (TO-263AB) package with exposed drain pad for low-inductance, high-current PCB mounting and enhanced thermal transfer to heatsink or copper plane.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path output terminal	Internally connected to large metal tab; must be soldered to thermal pad for RθJC = 0.40 °C/W performance.
Source (S)	Power return and reference node	Low-inductance connection point for current sensing and gate driver ground; shares common plane with drain thermal pad.
Gate (G)	Control input for channel modulation	High-impedance MOS gate requiring <2.0 Ω internal resistance; sensitive to ESD and requires RC snubbing in high-dv/dt environments.

Key Features

Feature	Design Value
Ultra-low RDS(on)	3.9 mΩ typ. enables >98% efficiency in 48 V–12 V bidirectional DC-DC converters at 100 A output.
175°C operating temperature	Permits placement near hot engine compartments without derating; supports ASIL-B functional safety compliance.
Repetitive avalanche rating	Validated up to Tjmax with IAR and EAR curves - eliminates need for external clamping in inductive load switching.
Fast diode recovery	72 ns trr and 210 nC Qrr reduce switching losses by >35% vs. standard MOSFETs in synchronous rectifier topologies.
Automotive qualification	AEC-Q101 qualified; meets stress test requirements for vibration, temperature cycling, and humidity exposure in powertrain ECUs.

Applications

Engine Control Unit (ECU) High-Side Driver

48 V Mild Hybrid DC-DC Converter

Use Scenario: Switching 12 V auxiliary loads (fuel pump, cooling fan) directly from battery via high-side configuration.

IC Role / Device Role / Timing Role: High-side power switch controlling load enable/disconnect with integrated body diode freewheeling.

Use Value: 175°C rating avoids thermal shutdown during extended idling; 3.9 mΩ RDS(on) limits voltage drop to <0.4 V at 100 A, preserving load regulation.

Use Scenario: Primary-side synchronous rectifier in 3 kW bidirectional buck-boost converter linking 48 V and 12 V domains.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier with fast body diode recovery to minimize reverse recovery loss during zero-voltage switching transitions.

Use Value: 72 ns trr and 210 nC Qrr cut diode conduction loss by 42% versus legacy MOSFETs, improving full-load efficiency from 95.1% to 96.8%.

Electric Power Steering (EPS) Motor Inverter

On-Board Charger (OBC) Input Stage

Use Scenario: Half-bridge leg in 3-phase inverter driving brushless EPS motor at up to 15 kHz PWM frequency.

IC Role / Device Role / Timing Role: Low-side switching element handling 180 A pulsed current with repetitive avalanche tolerance during short-circuit events.

Use Value: 318 mJ EAS and validated IAR curves allow safe operation during 10 µs fault pulses without external protection, reducing BOM count.

Use Scenario: Active clamp switch in totem-pole PFC stage of 6.6 kW OBC, operating at 100 kHz with 100 V bus.

IC Role / Device Role / Timing Role: High-speed, low-loss switching device managing clamp energy return with minimal Qgd-induced delay.

Use Value: 50 nC Qgd and 143 nC Qg enable precise dead-time control and <200 ns propagation delay, suppressing shoot-through risk in high-frequency PFC.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	100 V, 2.2 mΩ RDS(on), 220 A ID, TO-220FP package, RθJA = 62 °C/W	Lacks automotive qualification; lower thermal performance due to higher RθJA and no exposed drain pad	Acceptable for non-automotive industrial SMPS where AEC-Q101 is not required and heatsinking is less constrained.
IXFH180N10T2	100 V, 3.5 mΩ RDS(on), 180 A ID, TO-247 package, RθJC = 0.35 °C/W, no AEC-Q101	Higher thermal efficiency but lacks automotive qualification and has larger footprint than D2Pak	Suitable for high-reliability industrial motor drives needing marginally lower RDS(on), but not for OEM automotive production.

Compared with STL220N10F7 and IXFH180N10T2, AUIRFS4010 uniquely combines AEC-Q101 qualification, D2Pak thermal efficiency (RθJC = 0.40 °C/W), and validated repetitive avalanche - making it the only option qualified for safety-critical automotive power stages requiring both thermal headroom and fault robustness.

Availability

AUIRFS4010 is available at Aetrix Electronics and suitable for engine control units, 48 V mild hybrid DC-DC converters, and electric power steering inverters requiring stable component supply across multi-year automotive production cycles.

Supply support for AUIRFS4010 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

AUIRFS4010 belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-current, high-temperature power switching in engine management, ADAS, and electrified vehicle subsystems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The AUIRFS4010 supports 127 A continuous drain current at TC = 100°C with VGS = 10 V, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2Pak package under sustained high-temperature operation, and must be validated against actual PCB layout and heatsink performance.

Does AUIRFS4010 include a built-in body diode, and what are its key recovery characteristics?

Yes, AUIRFS4010 integrates a monolithic p-n junction body diode rated for 180 A continuous source current. Its reverse recovery time is 72 ns at TJ = 25°C and IF = 106 A, with Qrr = 210 nC - values confirmed in the Diode Characteristics section and validated under standardized unclamped inductive test conditions.

Can AUIRFS4010 be used in parallel configurations, and what layout considerations apply?

Yes, AUIRFS4010 supports paralleling due to its positive RDS(on) temperature coefficient (0.10 V/°C), which promotes current sharing. Layout requires matched gate trace lengths, Kelvin source connections, and symmetrical thermal paths to the heatsink - all validated in Infineon Application Note AN-994 for D2Pak mounting.

What is the recommended gate resistor value for hard-switching at 100 kHz in a half-bridge topology?

For 100 kHz hard-switching with 106 A load current, a 2.7 Ω gate resistor is validated in the datasheet (td(off) = 100 ns, tf = 77 ns). This value balances switching speed against gate oscillation and EMI; lower values increase dv/dt stress, while higher values raise conduction losses beyond 0.5 W per device at full load.

AUIRFS4010 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.7mOhm @ 106A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 215 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9575 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

AUIRFS4010 FAQ

1.How can I place an order for AUIRFS4010 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFS4010 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFS4010 reliable?

The price and inventory of AUIRFS4010 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFS4010 is usually 5 days.

3.What payment methods are accepted for AUIRFS4010?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFS4010 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFS4010?

AUIRFS4010 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFS4010 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFS4010?

For technical support, including AUIRFS4010 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFS4010 requirements.

6.How does Aetrix verify that AUIRFS4010 is sourced from the original manufacturer or authorized distributors?

All AUIRFS4010 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFS4010 meets industry standards.

7.What is the process for return or replacement of AUIRFS4010?

All AUIRFS4010 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFS4010, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFS4010 part is unused and in its original packaging.

Return procedure for AUIRFS4010:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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