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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFS4010TRL

Name: AUIRFS4010TRL
Brand: Infineon Technologies
SKU: AUIRFS4010TRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFS4010TRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AUIRFS4010TRL.pdf

Description:: MOSFET N-CH 100V 180A D2PAK

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Product details

Overview

AUIRFS4010TRL from Infineon is an automotive-grade N-channel D2PAK (TO-263AB) HEXFET® Power MOSFET with 100 V V_BR(DSS), 3.9 mΩ typical R_DS(on) at V_GS = 10 V and 106 A, 175 °C maximum junction temperature, and 318 mJ single-pulse avalanche energy - deployed in high-current DC-DC converters and motor control stages of EV traction inverters and 48 V mild-hybrid systems.

For engineers reviewing the AUIRFS4010TRL datasheet, AUIRFS4010TRL pinout, AUIRFS4010TRL application, or AUIRFS4010TRL equivalent, this page delivers verified thermal resistance (R_θJC = 0.40 °C/W), gate charge (Q_g = 143–215 nC), diode recovery performance (t_rr = 72–81 ns), and automotive qualification per AEC-Q101 for direct system-level design validation.

Technical Context

This MOSFET uses Infineon's advanced trench-gate process to achieve ultra-low on-resistance per die area while maintaining robust unclamped inductive switching capability up to T_jmax. Its body diode supports fast synchronous rectification with 1.3 V V_SD at 106 A and controlled reverse recovery (Q_rr = 210–268 nC).

The device operates under strict automotive thermal constraints: R_θJC = 0.40 °C/W enables high-power dissipation (375 W at T_C = 25 °C) with case-mounted heatsinking, and its 175 °C rated junction allows sustained operation in engine bay or powertrain modules without derating below ambient extremes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	100 V - Withstands 100 V drain-source blocking voltage before avalanche onset; suitable for 48 V and 60 V nominal bus systems with margin.
R_DS(on) typ.	3.9 mΩ @ V_GS = 10 V, I_D = 106 A - Enables <1.1 W conduction loss at 180 A continuous current with proper thermal management.
I_D @ T_C = 25 °C	180 A - Supports high-current motor phase legs and battery disconnect switches without parallel devices.
E_AS	318 mJ - Allows safe single-pulse unclamped inductive switching up to 106 A without thermal runaway.
t_rr	72 ns @ T_J = 25 °C - Minimizes commutation losses and EMI in hard-switched buck/boost topologies.
Q_g	143–215 nC - Determines gate driver strength requirement; ~2.15 A peak drive needed for 100 ns turn-on with 2.7 Ω gate resistor.
R_θJC	0.40 °C/W - Enables 375 W power dissipation with ≤150 °C case-to-junction rise; critical for compact heatsink integration.

Pinout & Package

D2PAK (TO-263AB) package with exposed drain pad for low-inductance, high-current PCB mounting and thermal conduction to heatsink or copper plane.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Controls channel conduction; requires 10 V drive for full enhancement; internal R_G = 2.0 Ω limits ringing but increases switching time.
2 (D)	Drain	High-side or low-side power node connection; electrically tied to exposed metal tab - must be isolated from heatsink unless referenced to same potential.
3 (S)	Source	Reference node for gate drive and current sensing; connects to power ground or floating source in high-side configuration.

Key Features

Feature	Design Value
175 °C operating junction temperature	Enables deployment in under-hood environments without forced air cooling or oversized heatsinks.
Repetitive avalanche rated	Supports reliable operation during transient overcurrent events (e.g., motor stall, short-circuit) without immediate failure.
Ultra-low R_DS(on) density	Reduces silicon area and cost per ampere versus legacy planar MOSFETs - improves power density in space-constrained modules.
Fast diode recovery (dv/dt = 31 V/ns)	Minimizes voltage overshoot and snubber losses during hard commutation in half-bridge configurations.
AEC-Q101 qualified	Validated for automotive use including temperature cycling, humidity testing, and HTOL - eliminates requalification effort for Tier 1 designs.

Applications

Automotive Traction Inverter Phase Leg

48 V Mild-Hybrid DC-DC Converter

Use Scenario: High-current switching in 3-phase inverter driving PMSM motor in 40–100 kW EV powertrain.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge topology; handles 180 A continuous, 720 A pulsed drain current with <100 ns turn-off delay.

Use Value: 3.9 mΩ R_DS(on) reduces conduction loss by >35% vs. comparable 100 V MOSFETs, directly improving inverter efficiency and thermal margin.

Use Scenario: Primary-side synchronous rectifier in bidirectional 48 V–12 V LLC resonant converter for start-stop and regenerative braking.

IC Role / Device Role / Timing Role: High-frequency (200–500 kHz) synchronous rectifier with body diode conducting reverse recovery current during dead-time.

Use Value: 72 ns t_rr and 210 nC Q_rr minimize reverse recovery loss and EMI generation, enabling >97% conversion efficiency at full load.

Engine Control Unit (ECU) Load Switch

Commercial Vehicle Battery Disconnect Module

Use Scenario: High-side power switch controlling fuel injector, ignition coil, or turbocharger actuator in diesel ECU.

IC Role / Device Role / Timing Role: Protected load switch with integrated avalanche energy handling; withstands inductive kickback up to 318 mJ.

Use Value: Eliminates need for external TVS or snubber components - reduces BOM count and PCB area while meeting ISO 7637-2 pulse 5a requirements.

Use Scenario: Main contactor replacement in 24/48 V commercial vehicle battery management system for remote disconnect and isolation.

IC Role / Device Role / Timing Role: Solid-state high-current switch rated for 180 A continuous and 720 A surge; operated via isolated gate driver with soft-start control.

Use Value: 175 °C rating ensures reliability during prolonged cranking or high-ambient operation; R_θJC = 0.40 °C/W enables direct bolt-down to chassis without thermal interface material.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	100 V, 2.2 mΩ R_DS(on), 220 A I_D, TO-220FP package, R_θJC = 0.55 °C/W	Higher current rating but larger thermal resistance; requires larger heatsink footprint	Select when higher peak current headroom is needed and board space allows TO-220FP mounting.
IXFH180N10P	100 V, 4.2 mΩ R_DS(on), 180 A I_D, TO-247 package, R_θJC = 0.35 °C/W, no AEC-Q101 certification	Lower thermal resistance but lacks automotive qualification; not approved for safety-critical ECUs	Select only for industrial or non-automotive applications where qualification is not required and superior thermal performance is prioritized.

Compared with STL220N10F7 and IXFH180N10P, AUIRFS4010TRL uniquely balances automotive qualification, D2PAK form factor, 0.40 °C/W thermal resistance, and 3.9 mΩ on-resistance - making it optimal for space-constrained, thermally demanding automotive power stages requiring zero requalification risk.

Availability

AUIRFS4010TRL is available at Aetrix Electronics and suitable for automotive traction inverters, 48 V mild-hybrid DC-DC converters, and ECU load switches requiring stable component supply across multi-year production cycles.

Supply support for AUIRFS4010TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The AUIRFS4010TRL belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-efficiency power conversion in engine control, electrified powertrain, and ADAS subsystems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The AUIRFS4010TRL supports 127 A continuous drain current at T_C = 100 °C and V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat transfer at elevated case temperatures and must be validated against actual board layout and heatsink performance.

Is the body diode suitable for synchronous rectification in a 500 kHz LLC converter?

Yes - the body diode exhibits 72 ns reverse recovery time at 25 °C and 210 nC Q_rr, enabling efficient synchronous rectification up to 500 kHz when paired with precise gate timing to minimize overlap conduction loss and dv/dt-induced shoot-through.

Does AUIRFS4010TRL require a negative gate voltage for reliable turn-off in high-noise automotive environments?

No - the gate threshold voltage range is 2.0–4.0 V, and stable turn-off is achieved with 0 V gate drive. However, applying –5 V to –10 V enhances noise immunity and reduces Miller-induced false turn-on during high dv/dt switching events in high-power inverters.

Can AUIRFS4010TRL replace AUIRFSL4010 in the same PCB footprint?

Yes - both share identical D2PAK (TO-263AB) package dimensions and pinout (G-D-S). The AUIRFS4010TRL is tape-and-reel packaged for automated assembly, while AUIRFSL4010 is tube-packaged; no layout or thermal redesign is needed for substitution.

AUIRFS4010TRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 4.7mOhm @ 106A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 215 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 9575 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

AUIRFS4010TRL FAQ

1.How can I place an order for AUIRFS4010TRL through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFS4010TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFS4010TRL reliable?

The price and inventory of AUIRFS4010TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFS4010TRL is usually 5 days.

3.What payment methods are accepted for AUIRFS4010TRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFS4010TRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFS4010TRL?

AUIRFS4010TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFS4010TRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFS4010TRL?

For technical support, including AUIRFS4010TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFS4010TRL requirements.

6.How does Aetrix verify that AUIRFS4010TRL is sourced from the original manufacturer or authorized distributors?

All AUIRFS4010TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFS4010TRL meets industry standards.

7.What is the process for return or replacement of AUIRFS4010TRL?

All AUIRFS4010TRL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFS4010TRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFS4010TRL part is unused and in its original packaging.

Return procedure for AUIRFS4010TRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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