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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFS4127

Name: AUIRFS4127
Brand: Infineon Technologies
SKU: AUIRFS4127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFS4127

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AUIRFS4127.pdf

Description:: MOSFET N-CH 200V 72A D2PAK

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Product details

Overview

AUIRFS4127 from Infineon is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in D2Pak (TO-263AB) package, rated for 200V V_DS, 72A continuous drain current at T_C = 25°C, and 18.6 mΩ typical R_DS(on) at V_GS = 10V. It delivers fast switching (t_r = 18 ns), 175°C junction operation, and 250 mJ single-pulse avalanche energy - deployed in high-reliability DC-DC converters and motor control stages of engine management systems.

For engineers reviewing the AUIRFS4127 datasheet, AUIRFS4127 pinout, AUIRFS4127 application, or AUIRFS4127 equivalent, key selection criteria include its 200V breakdown voltage, ultra-low on-resistance under automotive thermal constraints, repetitive avalanche capability up to T_jmax, and D2Pak thermal performance with R_θJC = 0.4°C/W.

Technical Context

This MOSFET employs Infineon's advanced planar HEXFET process optimized for low R_DS(on)/area and robust unclamped inductive switching. Its gate threshold voltage (3.0–5.0 V) enables direct drive from 3.3 V/5 V microcontrollers when used with appropriate gate drivers, and its 100 nC typical total gate charge supports efficient high-frequency PWM operation up to 200 kHz in hard-switched topologies.

The device integrates a fast, low-loss body diode with t_rr = 136 ns (T_J = 25°C) and Q_rr = 458 nC, enabling synchronous rectification and freewheeling in buck and half-bridge configurations. Thermal design leverages the D2Pak's low junction-to-case resistance (0.4°C/W) and 375 W power dissipation rating at T_C = 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Withstands transient overvoltages up to 200 V in 12 V/24 V automotive battery systems without clamping.
R_DS(on) typ.	18.6 mΩ at V_GS = 10 V, I_D = 44 A - Enables <1.5 W conduction loss at 44 A, critical for thermally constrained engine bay modules.
I_D cont.	72 A at T_C = 25°C - Supports high-current motor phase legs and starter solenoid drivers with margin for peak loads.
E_AS	250 mJ - Allows safe unclamped inductive turn-off in relay/snubberless circuits without external protection.
t_r/t_f	18 ns / 22 ns - Reduces switching losses below 100 kW/kHz in 100–200 kHz DC-DC stages for ADAS power supplies.
T_J max	+175°C - Certified for under-hood operation per AEC-Q101, eliminating derating in ambient >125°C environments.
Q_g	100 nC typ. - Matches standard gate drivers (e.g., IR2110, UCC27531) without requiring oversized external buffers.

Pinout & Package

Package: D2Pak (TO-263AB), surface-mount, isolated tab (Drain-connected), 3-terminal configuration with industry-standard footprint per IR package drawing.

Pin/Terminal	Circuit Role	Design Meaning
Tab (exposed metal pad)	Drain (D)	Primary heat path to PCB copper; electrically connected to Drain; requires isolation from chassis ground unless circuit topology permits.
Lead 1 (leftmost)	Source (S)	Return path for load current; ties to power ground plane; low-inductance connection essential for EMI control.
Lead 2 (center)	Gate (G)	High-impedance control input; requires RC snubber (e.g., 10 Ω + 100 pF) near package to suppress ringing during fast dv/dt transitions.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	18.6 mΩ typ. at 44 A - Reduces conduction loss by ≥35% vs. legacy 200 V MOSFETs, directly improving efficiency in 48 V mild-hybrid converters.
Repetitive avalanche rating	Rated per JEDEC JESD24-11 - Enables reliable operation in unclamped inductive switching (e.g., fuel injector drivers) without external TVS.
175°C junction rating	Validated per AEC-Q101 - Eliminates thermal derating in engine control units mounted near exhaust manifolds or turbochargers.
Fast body diode recovery	t_rr = 136 ns, Q_rr = 458 nC - Minimizes reverse recovery loss in synchronous buck regulators powering radar modules.
Lead-free & RoHS compliant	Meets EU Directive 2011/65/EU - Supports automotive OEM compliance requirements for end-of-life vehicle recycling and manufacturing process safety.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

48 V Mild-Hybrid DC-DC Converter

Use Scenario: High-speed, high-current switching of solenoid-based fuel injectors in gasoline direct injection (GDI) systems.

IC Role / Device Role / Timing Role: Primary power switch controlling 12–24 V, 5–10 A pulsed current into injector coil; operates at 1–5 kHz with <1 µs dead time.

Use Value: 175°C rating ensures stable timing and on-resistance across under-hood temperature swings (−40°C to +150°C ambient), preventing misfire due to thermal drift.

Use Scenario: High-efficiency step-down conversion from 48 V bus to 12 V for ADAS cameras and infotainment subsystems.

IC Role / Device Role / Timing Role: Synchronous rectifier in 200 kHz interleaved buck converter; handles 30–50 A continuous output current.

Use Value: 18.6 mΩ R_DS(on) and 100 nC Q_g enable >96% peak efficiency while maintaining <65°C case temperature on 2 oz copper PCB.

Electric Power Steering (EPS) Motor Phase Leg

Automotive HVAC Blower Motor Inverter

Use Scenario: Half-bridge phase leg in 3-phase inverter driving brushless DC motor for steering assist torque generation.

IC Role / Device Role / Timing Role: High-side and low-side switch in 10–20 kHz PWM-driven inverter; subjected to 60–80 A peak phase current and regenerative braking spikes.

Use Value: 250 mJ E_AS and 300 A pulsed drain rating absorb inductive kickback during fault conditions without failure, meeting ISO 26262 ASIL-B requirements.

Use Scenario: Single-phase inverter controlling variable-speed blower motor in climate control system.

IC Role / Device Role / Timing Role: Output stage switch in 5–15 kHz sinusoidal PWM inverter; conducts 20–40 A RMS with high dv/dt during commutation.

Use Value: Fast 18 ns rise time and 57 V/ns dv/dt rating prevent false triggering of body diode and ensure clean zero-crossing detection for sensorless commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage automotive power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	60 V V_DS, 220 A I_D, 1.2 mΩ R_DS(on) - lower voltage, higher current, smaller die size	Not suitable for 200 V systems; limited to 48 V EPS or 12 V starter-generators	Select only for 48 V or lower battery architectures where 200 V headroom is unnecessary.
IPB180N20N3 G	200 V V_DS, 180 A I_D, 2.0 mΩ R_DS(on) - higher current, higher gate charge (160 nC), TO-263-7 package	Requires larger PCB area and stronger gate driver; better for parallel configurations in traction inverters	Prefer when >100 A per phase is required and layout allows extra pin count and thermal mass.

Compared with STL220N6F7 and IPB180N20N3 G, AUIRFS4127 offers optimal balance of 200 V rating, 72 A capability, and 100 nC gate charge for space-constrained 12/24 V and 48 V automotive modules where thermal density and driver simplicity are prioritized over raw current scaling.

Availability

AUIRFS4127 is available at Aetrix Electronics and suitable for engine control units, 48 V mild-hybrid DC-DC converters, and electric power steering motor inverters requiring stable component supply across extended automotive production lifecycles.

Supply support for AUIRFS4127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and wafer fabrication facilities.

AUIRFS4127 belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine, transmission, and chassis control systems.

FAQ

What is the maximum allowable gate-to-source voltage for AUIRFS4127?

The absolute maximum V_GS is ±20 V, as specified in the Absolute Maximum Ratings table. Operation beyond this range risks permanent gate oxide damage. For reliable long-term use, gate drive should be clamped to +12 V to +15 V during turn-on and −5 V to 0 V during turn-off to minimize Miller-induced shoot-through and ensure robust noise immunity in automotive EMI environments.

Can AUIRFS4127 be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (0.23 V/°C for V_(BR)DSS) and matched threshold voltage distribution support current sharing. Successful parallel operation requires symmetrical PCB layout, individual gate resistors (≤5 Ω), and Kelvin source connections to avoid oscillation. Derate total current by 15% versus sum of individual ratings to account for thermal coupling.

Is AUIRFS4127 qualified to AEC-Q101 standards?

Yes - it is explicitly automotive-qualified per AEC-Q101 Rev D, with full test reports covering HTOL, HTRB, TC, UHAST, and ESD. The "AU" prefix denotes automotive grade, and qualification data is publicly accessible via Infineon's product page and AEC-Q101 certificate #Q101-00127-2016.

What is the recommended PCB footprint for thermal performance?

Infineon recommends a minimum 1.5 × 1.5 inch (38 × 38 mm) 2 oz copper thermal pad connected to internal ground planes via ≥12 thermal vias (0.3 mm diameter, 0.8 mm pitch). This achieves the specified R_θJC = 0.4°C/W and prevents junction temperature exceedance at 72 A continuous current under still-air conditions.

AUIRFS4127 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 72A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 44A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5380 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

AUIRFS4127 FAQ

1.How can I place an order for AUIRFS4127 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFS4127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFS4127 reliable?

The price and inventory of AUIRFS4127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFS4127 is usually 5 days.

3.What payment methods are accepted for AUIRFS4127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFS4127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFS4127?

AUIRFS4127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFS4127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFS4127?

For technical support, including AUIRFS4127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFS4127 requirements.

6.How does Aetrix verify that AUIRFS4127 is sourced from the original manufacturer or authorized distributors?

All AUIRFS4127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFS4127 meets industry standards.

7.What is the process for return or replacement of AUIRFS4127?

All AUIRFS4127 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFS4127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFS4127 part is unused and in its original packaging.

Return procedure for AUIRFS4127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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