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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFS4310

Name: AUIRFS4310
Brand: Infineon Technologies
SKU: AUIRFS4310
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFS4310

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AUIRFS4310.pdf

Description:: MOSFET N-CH 100V 75A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRFS4310 from Infineon is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in D2Pak (TO-263AB) package, rated for 100 V V_DS, 5.6 mΩ typ. R_DS(on) at V_GS = 10 V and 75 A package-limited continuous drain current. It operates up to 175°C junction temperature and supports repetitive avalanche energy of 980 mJ, making it suitable for high-efficiency DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the AUIRFS4310 datasheet, AUIRFS4310 pinout, AUIRFS4310 application, or AUIRFS4310 equivalent, key selection criteria include its 100 V breakdown voltage, ultra-low on-resistance, fast switching (t_r = 110 ns), 175°C thermal rating, and automotive qualification per AEC-Q101 standards.

Technical Context

This MOSFET employs advanced silicon process technology to minimize conduction losses while maintaining robust unclamped inductive switching capability. Its gate threshold voltage (2.0–4.0 V) enables reliable drive with standard 10 V logic-level controllers, and its low C_iss (7670 pF) and C_oss (540 pF) support high-frequency operation up to several hundred kHz.

The device integrates a fast-recovery body diode with t_rr = 45–68 ns and Q_rr = 82–120 nC at 25°C, enabling efficient synchronous rectification and freewheeling in buck and half-bridge topologies. Thermal resistance R_θJC is 0.50 °C/W, allowing high-power dissipation when mounted on copper-clad PCBs with proper heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands up to 100 V drain-source voltage before breakdown, suitable for 48 V automotive bus and 24 V industrial systems.
R_DS(on) typ.	5.6 mΩ at V_GS = 10 V, I_D = 75 A - Enables <1 W conduction loss at 75 A, critical for thermal management in compact power modules.
I_D (Package)	75 A continuous - Limited by leadframe and solder joint thermal capacity, not silicon; defines safe steady-state current in PCB-mounted designs.
E_AS	980 mJ single-pulse avalanche energy - Supports robust operation during transient overloads without external snubbers in inductive load switching.
t_r/t_f	110 ns / 78 ns - Fast switching reduces transition losses, enabling >200 kHz PWM operation in high-efficiency SMPS designs.
T_J max	175°C - Rated for under-hood automotive environments and industrial applications with elevated ambient temperatures.
Q_g	170 nC typ. - Determines gate driver strength requirement; compatible with common 2–4 A peak gate drivers in motor control ICs.

Pinout & Package

Supplied in D2Pak (TO-263AB) surface-mount package with exposed drain pad for thermal and electrical connection. The package features three leads: Gate (G), Drain (D), and Source (S), with Drain electrically connected to the metal tab for low-inductance, high-current paths.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires 10 V drive for full enhancement; input capacitance C_iss = 7670 pF affects switching speed and driver sizing.
D	Drain	Main high-side current path; electrically tied to exposed metal tab; must be thermally coupled to heatsink or large copper pour.
S	Source	Reference node for gate drive and current sensing; low-impedance return path; connects to source of upstream driver or shunt resistor.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	5.6 mΩ typ. at 10 V gate drive - Reduces I²R losses in high-current 12–48 V automotive power stages.
175°C junction rating	Rated for continuous operation up to 175°C - Eliminates derating in engine bay or transmission control units with limited airflow.
Repetitive avalanche capability	980 mJ single-pulse E_AS; validated for repeated events - Enables reliable unclamped inductive switching in solenoid and pump drivers without external protection.
Fast body diode recovery	t_rr = 45–68 ns, Q_rr = 82–120 nC - Minimizes reverse recovery losses in synchronous rectifiers and bidirectional DC-DC converters.
AEC-Q101 qualified	Automotive-grade reliability testing per JEDEC standards - Validated for lifetime operation in safety-critical engine control, EPS, and ADAS subsystems.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 75 A and pulse widths down to 1 ms.

IC Role / Device Role / Timing Role: Main power switch controlling injector coil energization and de-energization; handles unclamped inductive flyback.

Use Value: Repetitive avalanche rating (980 mJ) eliminates need for external flyback diodes, reducing BOM count and PCB area.

Use Scenario: Half-bridge phase leg in 12–48 V EPS motor drives, operating at 10–20 kHz PWM with 50–60 A RMS current.

IC Role / Device Role / Timing Role: Low-side or high-side switching element; body diode provides freewheeling path during dead-time.

Use Value: Fast t_r/t_f (110/78 ns) and low Q_g (170 nC) enable precise PWM timing and reduced switching losses at high frequency.

48 V Mild Hybrid DC-DC Converter Primary Switch

Onboard Charger (OBC) Bidirectional Isolation Stage

Use Scenario: Primary-side switch in 3.3 kW 48 V–400 V isolated DC-DC converter for 48 V mild hybrid architectures.

IC Role / Device Role / Timing Role: High-frequency hard-switched MOSFET in phase-shifted full-bridge topology; conducts up to 75 A peak.

Use Value: 5.6 mΩ R_DS(on) limits conduction loss to <3 W at 75 A, enabling >97% efficiency at full load with minimal heatsinking.

Use Scenario: Bidirectional power transfer switch in dual-active-bridge OBC, handling 6.6 kW AC/DC + DC/DC conversion.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in secondary-side bridge; conducts reverse current during regenerative mode.

Use Value: Low Q_rr (82–120 nC) and fast t_rr (45–68 ns) minimize reverse recovery losses during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	R_DS(on) = 3.3 mΩ typ., but only 150 A package-limited ID; no specified E_AS rating; T_J max = 175°C.	Higher current capability but lacks documented repetitive avalanche performance; less suitable for unclamped inductive loads.	Prefer when peak current >75 A is required and avalanche stress is mitigated externally.
IXFH110N10P	R_DS(on) = 7.5 mΩ typ.; E_AS = 1000 mJ; TO-247 package; higher R_θJA than D2Pak.	Larger through-hole package increases board space and thermal resistance; better suited for discrete heatsink mounting.	Choose when mechanical robustness and field-serviceability outweigh surface-mount density requirements.

Compared with STL220N10F7 and IXFH110N10P, AUIRFS4310 offers optimal balance of low R_DS(on), verified repetitive avalanche, D2Pak thermal performance, and AEC-Q101 compliance-making it preferred for space-constrained, high-reliability automotive power stages where both conduction and switching losses must be minimized.

Availability

AUIRFS4310 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and 48 V mild hybrid DC-DC converters requiring stable component supply across extended automotive production lifecycles.

Supply support for AUIRFS4310 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and quality certification aligned to ISO/TS 16949.

AUIRFS4310 belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, designed specifically for high-reliability, high-current switching in engine management, chassis control, and electrified vehicle subsystems.

FAQ

What is the maximum continuous drain current for AUIRFS4310 at 100°C case temperature?

At T_C = 100°C, the continuous drain current is 92 A (silicon-limited) per the Absolute Maximum Ratings table. However, the package-limited rating remains 75 A regardless of temperature, as bond wire current capacity does not increase with cooling. Designers must respect the lower of the two values-75 A-for long-term reliability in PCB-mounted applications.

Does AUIRFS4310 require a gate resistor for safe operation?

Yes-a gate resistor (typically 2.6 Ω to 10 Ω) is recommended to control dV/dt and prevent parasitic oscillation during switching. The datasheet specifies t_d(on), t_r, t_d(off), and t_f with R_G = 2.6 Ω. Omitting it risks shoot-through in bridge configurations and excessive EMI due to ringing, especially given the device's 170 nC total gate charge and fast intrinsic switching speed.

Can AUIRFS4310 be used in synchronous rectification applications?

Yes-the integrated body diode has t_rr = 45–68 ns and Q_rr = 82–120 nC at 25°C, enabling efficient synchronous rectification in buck, forward, and LLC converters up to ~200 kHz. Its low V_SD (1.3 V at 75 A) further reduces conduction loss compared to external Schottky diodes in high-current 12–48 V outputs.

Is the D2Pak package of AUIRFS4310 RoHS-compliant and lead-free?

Yes-AUIRFS4310 is explicitly stated as lead-free and RoHS compliant in the Features section. The D2Pak (TO-263AB) package uses matte tin-plated leads and meets JEDEC J-STD-020 moisture sensitivity level (MSL) 3 requirements. Reflow profiles must follow Infineon's recommended thermal profile for lead-free soldering, with peak temperature ≤260°C for 10 seconds.

AUIRFS4310 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 250 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7670 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

AUIRFS4310 FAQ

1.How can I place an order for AUIRFS4310 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFS4310 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFS4310 reliable?

The price and inventory of AUIRFS4310 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFS4310 is usually 5 days.

3.What payment methods are accepted for AUIRFS4310?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFS4310 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFS4310?

AUIRFS4310 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFS4310 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFS4310?

For technical support, including AUIRFS4310 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFS4310 requirements.

6.How does Aetrix verify that AUIRFS4310 is sourced from the original manufacturer or authorized distributors?

All AUIRFS4310 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFS4310 meets industry standards.

7.What is the process for return or replacement of AUIRFS4310?

All AUIRFS4310 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFS4310, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFS4310 part is unused and in its original packaging.

Return procedure for AUIRFS4310:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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