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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFS4310TRL

Name: AUIRFS4310TRL
Brand: Infineon Technologies
SKU: AUIRFS4310TRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFS4310TRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AUIRFS4310TRL.pdf

Description:: MOSFET N-CH 100V 75A D2PAK

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Product details

Overview

AUIRFS4310TRL from Infineon is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in D2Pak (TO-263AB) package, rated for 100 V V(BR)DSS, 5.6 mΩ typ. RDS(on) at VGS = 10 V and ID = 75 A, with 175°C maximum junction temperature and 300 W PD @ TC = 25°C. It delivers ultra-low conduction loss and fast switching for high-efficiency DC-DC converters and motor control in engine management systems.

For engineers reviewing the AUIRFS4310TRL datasheet, AUIRFS4310TRL pinout, AUIRFS4310TRL application, or AUIRFS4310TRL equivalent, key selection criteria include its 75 A package-limited continuous drain current, 170–250 nC total gate charge, 14 V/ns peak diode recovery dv/dt rating, and validated repetitive avalanche capability up to TJmax - critical for robust 12 V/48 V automotive power stages.

Technical Context

This MOSFET employs Infineon's advanced silicon process to achieve normalized on-resistance stability across –55°C to +175°C operation, with RDS(on) drift ≤3× over full temperature range. Its body diode exhibits trr = 45–68 ns and Qrr = 82–120 nC at TJ = 25°C, enabling efficient synchronous rectification and unclamped inductive switching.

The device supports unclamped inductive switching with EAS = 980 mJ (single-pulse, thermally limited), and allows repetitive avalanche up to TJmax under controlled pulse conditions (e.g., tav ≤ 100 µs, ΔTJ ≤ 25°C). Gate drive design must account for RG = 1.4 Ω and Qgs/Qgd = 46/62 nC to manage turn-on delay (26 ns) and fall time (78 ns) in high-frequency (>100 kHz) applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	100 V - Withstands up to 100 V drain-source blocking voltage before avalanche onset; suitable for 12 V/48 V automotive bus protection.
RDS(on) typ.	5.6 mΩ @ VGS = 10 V, ID = 75 A - Enables <0.42 W conduction loss at 75 A, reducing thermal load in compact power modules.
ID (Package Limited)	75 A @ TC = 25°C - Maximum continuous current constrained by package thermal limits, not silicon; dictates heatsink sizing.
Qg total	170–250 nC - Determines gate driver power requirement and switching loss; impacts efficiency in 50–200 kHz PWM designs.
TJ max	+175°C - Supports operation in under-hood environments without derating; enables higher power density vs. 150°C-rated devices.
EAS	980 mJ - Single-pulse avalanche energy limit defines safe inductive turn-off margin in motor phase-leg or solenoid drivers.
dv/dt (diode)	14 V/ns - High diode recovery dv/dt tolerance reduces risk of false turn-on during commutation in half-bridge topologies.

Pinout & Package

D2Pak (TO-263AB) surface-mount package with exposed drain pad for low thermal resistance (RθJC = 0.50°C/W). Standard 3-pin configuration: Gate (G), Drain (D), Source (S), with drain connected to the large metal tab for PCB thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives 10 V logic-level drive; requires ≥1.4 Ω series resistance to damp ringing due to 1.4 Ω intrinsic gate resistance.
D	Drain current path / heat sink interface	Connected to PCB copper pour; carries full load current and dissipates >90% of device heat via case-to-board conduction.
S	Source reference / return path	Common node for gate drive return and current sensing; low-inductance layout essential to avoid shoot-through in bridge configurations.

Key Features

Feature	Design Value
Ultra-low RDS(on)	5.6 mΩ typ. minimizes I²R losses in high-current 12 V starter-generator and EPS applications.
175°C operating temperature	Enables direct mounting near hot engine components without external derating or forced cooling.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching up to TJmax - eliminates need for external snubbers in solenoid drivers.
Fast body diode recovery	trr = 45–68 ns and Qrr = 82–120 nC support high-frequency synchronous rectification in buck converters.
Automotive qualification	AEC-Q101 qualified per Infineon's automotive standards; includes stress testing for vibration, thermal cycling, and humidity.

Applications

Engine Control Unit (ECU) Power Stage

Electric Power Steering (EPS) H-Bridge

Use Scenario: High-side/low-side switching of fuel injector and ignition coil loads in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Primary power switch handling pulsed 10–15 A loads at 1–10 Hz, with fast turn-off to prevent coil saturation.

Use Value: 175°C rating ensures reliability under hood ambient up to 125°C; 980 mJ EAS prevents failure during inductive kickback.

Use Scenario: Bidirectional motor drive in column-assist EPS systems requiring 40–60 A peak phase current.

IC Role / Device Role / Timing Role: Low-side MOSFET in three-phase inverter, switching at 8–20 kHz with precise dead-time control.

Use Value: 5.6 mΩ RDS(on) cuts conduction loss by >30% vs. legacy 8 mΩ parts; fast trr enables clean commutation at high PWM frequency.

48 V Mild Hybrid DC-DC Converter

On-Board Charger (OBC) Auxiliary Supply

Use Scenario: Primary-side switch in 3.3 kW bi-directional CLLC resonant converter linking 48 V and 400 V domains.

IC Role / Device Role / Timing Role: Hard-switched or ZVS-capable power FET operating at 100–250 kHz with 75 A peak current.

Use Value: 170–250 nC Qg enables efficient gate drive with <2 W driver loss; 14 V/ns dv/dt rating suppresses parasitic turn-on.

Use Scenario: Secondary-side synchronous rectifier in 1.5 kW isolated flyback supplying 12 V control logic for OBC main controller.

IC Role / Device Role / Timing Role: Low-side rectifying switch replacing Schottky diode, conducting 30–50 A continuously.

Use Value: 5.6 mΩ RDS(on) achieves >96% rectifier efficiency at 40 A; 175°C rating accommodates sealed enclosure thermal buildup.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	100 V, 2.2 mΩ typ. RDS(on), TO-263 package, but only 150°C TJ max and no documented repetitive avalanche rating.	Better conduction loss, but unsuitable for unclamped inductive loads without external clamping.	Select when lowest RDS(on) dominates and avalanche stress is absent; verify thermal design for lower TJ limit.
IPB180N10N3 G	100 V, 1.8 mΩ typ. RDS(on), PG-HSOF-8 package, 175°C rated, but 3.5× higher Qg (620 nC) and larger footprint.	Higher efficiency at low frequency, but gate drive complexity increases; less suited for space-constrained ECU layouts.	Prefer for high-power, low-switching-frequency applications where gate drive overhead is acceptable.

Compared with STL220N10F7 and IPB180N10N3 G, AUIRFS4310TRL uniquely balances 5.6 mΩ conduction loss, 175°C operation, and validated repetitive avalanche - making it optimal for cost-sensitive, thermally constrained automotive power stages requiring field-proven ruggedness.

Availability

AUIRFS4310TRL is available at Aetrix Electronics and suitable for Engine Control Units, Electric Power Steering systems, 48 V mild hybrid DC-DC converters, and On-Board Charger auxiliary supplies requiring stable component supply across extended automotive lifecycles.

Supply support for AUIRFS4310TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

AUIRFS4310TRL belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine bay and chassis-mounted electronic control units.

FAQ

What is the maximum continuous drain current for AUIRFS4310TRL at 100°C case temperature?

At TC = 100°C, the silicon-limited continuous drain current is 92 A (VGS = 10 V), while the package-limited rating remains 75 A. The actual usable current is governed by thermal design - with RθJA = 40°C/W on standard PCB, sustained 92 A requires aggressive heatsinking to maintain TC ≤ 100°C.

Does AUIRFS4310TRL support gate drive from a 5 V microcontroller?

No - VGS(th) ranges from 2.0 V to 4.0 V, but RDS(on) is specified only at VGS = 10 V. Driving with 5 V yields significantly higher on-resistance (≥15 mΩ), excessive conduction loss, and thermal instability. A dedicated 10–12 V gate driver is required for full performance.

How is the 980 mJ single-pulse avalanche energy (EAS) tested and applied in circuit design?

EAS is measured under standardized unclamped inductive test conditions: L = 0.35 mH, RG = 25 Ω, IAS = 75 A, VGS = 10 V, starting TJ = 25°C. Designers use this value to size inductance and define safe operating area boundaries - exceeding EAS risks irreversible junction damage even if TJ remains below 175°C.

Is AUIRFS4310TRL compatible with lead-free reflow soldering processes?

Yes - it is RoHS-compliant and qualified for lead-free reflow with peak temperature up to 260°C for 10 seconds (measured 1.6 mm from case). The D2Pak package supports standard IPC-J-STD-020D profile; thermal pad soldering must follow Infineon's AN-994 footprint guidelines for optimal RθJC.

AUIRFS4310TRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 250 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7670 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

AUIRFS4310TRL FAQ

1.How can I place an order for AUIRFS4310TRL through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFS4310TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFS4310TRL reliable?

The price and inventory of AUIRFS4310TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFS4310TRL is usually 5 days.

3.What payment methods are accepted for AUIRFS4310TRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFS4310TRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFS4310TRL?

AUIRFS4310TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFS4310TRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFS4310TRL?

For technical support, including AUIRFS4310TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFS4310TRL requirements.

6.How does Aetrix verify that AUIRFS4310TRL is sourced from the original manufacturer or authorized distributors?

All AUIRFS4310TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFS4310TRL meets industry standards.

7.What is the process for return or replacement of AUIRFS4310TRL?

All AUIRFS4310TRL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFS4310TRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFS4310TRL part is unused and in its original packaging.

Return procedure for AUIRFS4310TRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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