Infineon Technologies AUIRFS4610

Overview

AUIRFS4610 from Infineon is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, rated for 100 V V_DS, 11 mΩ typical R_DS(on) at V_GS = 10 V and 44 A, 73 A continuous drain current at T_C = 25°C, and 175°C maximum junction temperature - deployed in high-reliability DC-DC converters, motor control inverters, and automotive body electronics.

For engineers reviewing the AUIRFS4610 datasheet, AUIRFS4610 pinout, AUIRFS4610 application, or AUIRFS4610 equivalent, key selection criteria include its 100 V breakdown voltage, ultra-low on-resistance with fast switching (t_r = 87 ns, t_f = 70 ns), repetitive avalanche capability (E_AR up to 370 mJ), and AEC-Q101 qualification for under-hood power stages.

Technical Context

This MOSFET uses advanced planar silicon process technology optimized for low conduction loss and robust transient handling. Its gate charge profile (Q_g = 90–140 nC, Q_gd = 36 nC) supports efficient hard-switching in synchronous buck and half-bridge topologies, while the body diode exhibits t_rr = 35–53 ns and Q_rr = 44–66 nC at 25°C - critical for minimizing commutation losses in bidirectional energy transfer.

The device features thermally enhanced packaging with R_θJC = 0.77°C/W and is characterized across –55°C to +175°C operating range. Its dV/dt immunity (7.6 V/ns) and dI/dt capability (up to 660 A/µs) are validated per AEC-Q101 stress conditions, enabling stable operation in noisy automotive electrical systems without external snubbing.

Key Specifications

Pinout & Package

Supplied in TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, and 1.1 N·m screw torque rating. Thermal resistance R_θJC = 0.77°C/W measured at T_J ≈ 90°C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V automotive MOSFET applications.

Compared with STL135N10F7 and IXFH110N10P, AUIRFS4610 offers optimal balance of thermal performance (R_θJC = 0.77°C/W), proven automotive reliability, and cost-effective through-hole assembly - making it preferred for production-grade under-hood modules where mechanical robustness and serviceability matter.

Availability

AUIRFS4610 is available at Aetrix Electronics and suitable for automotive power conversion, motor control inverters, and engine management systems requiring stable component supply across multi-year vehicle production cycles.

Supply support for AUIRFS4610 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

AUIRFS4610 belongs to the HEXFET® Automotive Power MOSFET product line, engineered specifically for AEC-Q101-compliant high-temperature, high-reliability power switching in engine, chassis, and electrification systems.

FAQ

What is the maximum continuous drain current for AUIRFS4610 at 100°C case temperature?

The maximum continuous drain current is 52 A at T_C = 100°C and V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat dissipation capacity at elevated case temperatures, and must be verified against actual PCB layout and heatsink performance in final design.

Is AUIRFS4610 suitable for synchronous rectification in 48 V automotive DC-DC converters?

Yes - its low R_DS(on) (11 mΩ typ.), fast switching (t_r/t_f ≤ 90 ns), and body diode Q_rr = 44–66 nC enable efficient synchronous rectification. However, gate drive must be precisely timed to avoid shoot-through, and layout must minimize source inductance to preserve di/dt performance.

Does AUIRFS4610 require a gate resistor for automotive EMI compliance?

A gate resistor (typically 5–22 Ω) is recommended to dampen ringing caused by parasitic L_GS/C_iss resonance and limit peak dV/dt during turn-on. This improves conducted EMI performance in 150 kHz–30 MHz bands and prevents false triggering in noisy vehicle harness environments.

Can AUIRFS4610 replace AUIRFB4610 in existing TO-220 designs?

Yes - AUIRFS4610 and AUIRFB4610 share identical TO-220AB package, pinout, and electrical specifications. The "S" suffix denotes tape-and-reel packaging (800 pcs/reel), while "B" indicates tube packaging (50 pcs/tube); both are functionally and mechanically interchangeable in board-level designs.