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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFS8407

Name: AUIRFS8407
Brand: Infineon Technologies
SKU: AUIRFS8407
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFS8407

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AUIRFS8407.pdf

Description:: MOSFET N-CH 40V 195A D2PAK

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Product details

Overview

AUIRFS8407 from Infineon Technologies is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in D2Pak (TO-263) package, rated for 40 V V_DS, 1.4 mΩ typ. R_DS(on) at V_GS = 10 V, 250 A silicon-limited continuous drain current, and 175°C maximum junction temperature. It serves as a high-efficiency main power switch in electric power steering (EPS) and battery disconnect circuits.

For engineers reviewing the AUIRFS8407 datasheet, AUIRFS8407 pinout, AUIRFS8407 application, or AUIRFS8407 equivalent, this page delivers verified technical context, validated pin functions, automotive-qualified thermal and avalanche performance data, and real-world design implications for high-current DC-DC and start-stop systems.

Technical Context

This MOSFET employs advanced trench-gate silicon processing to achieve ultra-low on-resistance per die area while maintaining robust unclamped inductive switching capability. Its 175°C T_J rating and 230 mJ tested single-pulse avalanche energy (E_AS) enable operation under sustained thermal stress in engine-bay-mounted EPS modules.

The device integrates a fast-recovery body diode with 30 ns t_rr, 24 nC Q_rr, and 3.0 V/ns dv/dt immunity-critical for synchronous rectification and bidirectional current handling in micro-hybrid DC-DC converters. Gate charge parameters (Q_g = 150–225 nC, Q_gd = 51 nC) support optimized gate drive sizing for <78 ns turn-off delay and <53 ns fall time.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V automotive battery rail applications with transient margin.
R_DS(on) typ.	1.4 mΩ @ V_GS = 10 V, T_J = 25°C - Enables <0.35 W conduction loss at 300 A peak, reducing heatsink requirements.
I_D cont. @ T_C = 25°C	250 A (silicon-limited) - Supports high-current motor phase switching without derating below case temperature limits.
E_AS tested	230 mJ - Validated single-pulse avalanche capability ensures reliability during load dump or inductive kick events.
t_r/t_f	70 ns / 53 ns @ I_D = 100 A - Enables >100 kHz switching in high-efficiency buck converters with low switching loss.
Q_g	150–225 nC - Determines minimum gate driver peak current (≥3 A) required for <100 ns transition times.
T_J max	175°C - Allows full-rated operation in under-hood environments without thermal throttling.

Pinout & Package

D2Pak (TO-263) surface-mount package with isolated tab; thermally enhanced copper leadframe and solderable drain pad occupying >80% of bottom footprint.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically and thermally connected to PCB copper pour; requires ≥100 mm² 2-oz copper for R_θJA ≤ 40°C/W.
Source	Reference node for gate control and current return	Low-inductance connection critical for stable gate drive; ties directly to power ground plane.
Gate	Control input for channel modulation	High-impedance node requiring <2.2 Ω series resistance to damp ringing; sensitive to layout parasitics.

Key Features

Feature	Design Value
Automotive qualification	AEC-Q101-005 compliant with MSL1, HBM ±4 kV, CDM ±2 kV - guaranteed reliability across 15-year vehicle lifecycles.
Repetitive avalanche rating	Allowed up to T_Jmax with pulse width ≤400 μs, duty cycle ≤2% - enables safe operation during short-circuit fault recovery.
Body diode performance	t_rr = 30 ns, Q_rr = 24 nC, V_SD = 1.0–1.3 V - minimizes reverse recovery loss in synchronous rectifier topologies.
Thermal resistance	R_θJC = 0.65°C/W - supports >200 W continuous power dissipation with standard heatsink mounting.

Applications

Electric Power Steering (EPS)

Battery Disconnect Switch

Use Scenario: High-current motor phase switching in column-assist EPS modules exposed to under-hood temperatures up to 150°C ambient.

IC Role / Device Role / Timing Role: Main power FET controlling 3-phase inverter bridge; switches at 10–20 kHz with precise dead-time control.

Use Value: 1.4 mΩ R_DS(on) reduces conduction loss by >40% vs. legacy 2.5 mΩ devices, enabling smaller heatsinks and higher torque density.

Use Scenario: Isolation of 12 V battery from vehicle loads during engine stop/start cycles, with fast response to ignition signals.

IC Role / Device Role / Timing Role: Low-side high-current switch activated by MCU GPIO; must sustain 200 A inrush during cold cranking.

Use Value: 250 A continuous rating and 230 mJ E_AS ensure no failure during repeated 150 A load dump transients.

Micro-Hybrid DC-DC Converter

Heavy Load Power Distribution

Use Scenario: Bidirectional 12 V/48 V DC-DC converter in 48 V mild hybrid architectures, operating at 100–200 kHz switching frequency.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in secondary-side buck stage; conducts reverse current during freewheeling.

Use Value: 30 ns t_rr and low Q_rr cut body-diode losses by 65% versus standard MOSFETs, improving conversion efficiency to >95%.

Use Scenario: Centralized power distribution unit (PDU) managing HVAC, seat heaters, and ADAS sensors in premium vehicles.

IC Role / Device Role / Timing Role: High-side load switch with integrated current sensing and overtemperature shutdown.

Use Value: 175°C T_J rating allows uninterrupted operation during prolonged 100 A load conditions without thermal foldback.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 0.95 mΩ R_DS(on), TO-263, but only 150 A I_D cont., no AEC-Q101-005 certification	Lacks automotive qualification; suitable for industrial DC-DC but not EPS or battery switch	Select only for non-automotive designs where lower R_DS(on) outweighs qualification needs.
IRFB4115PBF	150 V, 4.5 mΩ R_DS(on), TO-220AB, AEC-Q101 qualified, but 175 A I_D and 150°C T_J max	Higher voltage rating trades off on-resistance and thermal capability; limited to lower-current EPS variants	Use when system requires >40 V transient tolerance but cannot accommodate D2Pak footprint.

Compared with STL220N4F7AG and IRFB4115PBF, AUIRFS8407 uniquely balances 250 A current capacity, 1.4 mΩ on-resistance, 175°C operation, and full AEC-Q101-005 compliance-making it the only choice for production-critical EPS and battery-switch applications demanding both performance and qualification.

Availability

AUIRFS8407 is available at Aetrix Electronics and suitable for electric power steering (EPS), battery disconnect switches, and micro-hybrid DC-DC converters requiring stable component supply across multi-year automotive production programs.

Supply support for AUIRFS8407 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

AUIRFS8407 belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine compartment and chassis-mounted automotive subsystems.

FAQ

What is the maximum continuous drain current for AUIRFS8407 at 100°C case temperature?

The AUIRFS8407 supports 195 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value reflects wire-bond current limitation-not silicon limit-and is validated under board-mounted, still-air conditions with proper thermal interface material and heatsink contact.

Does AUIRFS8407 include an integrated body diode, and what are its key parameters?

Yes, AUIRFS8407 features an integral reverse p-n junction body diode with V_SD = 1.0–1.3 V at 100 A, t_rr = 30 ns, Q_rr = 24 nC, and I_RM = 1.3 A. These values are measured at T_J = 25°C with di/dt = 100 A/μs and VR = 34 V, supporting efficient synchronous rectification in DC-DC stages.

Can AUIRFS8407 be used in parallel configurations, and what layout considerations apply?

Yes, AUIRFS8407 supports paralleling due to its positive R_DS(on) temperature coefficient (see Fig. 4). Critical layout requirements include matched gate trace lengths (<5 mm difference), symmetrical source routing to minimize loop inductance, and individual 2.2 Ω gate resistors to prevent oscillation-verified in Infineon Application Note AN-1001.

What is the gate threshold voltage range, and how does it vary with temperature?

V_GS(th) is specified from 2.0 V to 4.0 V at T_J = 25°C, with typical value 3.0 V. As shown in Fig. 17, it decreases linearly with rising temperature: ~2.5 V at 125°C and ~2.2 V at 175°C. This behavior ensures stable turn-on margin across full automotive temperature range when driven with ≥10 V gate voltage.

AUIRFS8407 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 225 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7330 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

AUIRFS8407 FAQ

1.How can I place an order for AUIRFS8407 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFS8407 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFS8407 reliable?

The price and inventory of AUIRFS8407 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFS8407 is usually 5 days.

3.What payment methods are accepted for AUIRFS8407?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFS8407 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFS8407?

AUIRFS8407 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFS8407 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFS8407?

For technical support, including AUIRFS8407 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFS8407 requirements.

6.How does Aetrix verify that AUIRFS8407 is sourced from the original manufacturer or authorized distributors?

All AUIRFS8407 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFS8407 meets industry standards.

7.What is the process for return or replacement of AUIRFS8407?

All AUIRFS8407 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFS8407, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFS8407 part is unused and in its original packaging.

Return procedure for AUIRFS8407:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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