Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies AUIRFS8407-7P

Part No.:
AUIRFS8407-7P
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-7, D2PAK (6 Leads + Tab)
Datasheet:
AetrixAUIRFS8407-7P.pdf
Description:
MOSFET N-CH 40V 240A D2PAK-7
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AUIRFS8407-7P from Infineon Technologies (formerly International Rectifier) is an automotive-grade N-channel D2Pak-7PIN HEXFET® Power MOSFET designed for high-current, low-voltage switching in safety-critical power paths. It delivers 40V VDS, 1.0 mΩ typ. RDS(on) at VGS = 10V, 240A package-limited continuous drain current, and 175°C maximum junction temperature - enabling robust operation in electric power steering, battery disconnect, and start-stop micro-hybrid systems.

For engineers reviewing the AUIRFS8407-7P datasheet, AUIRFS8407-7P pinout, AUIRFS8407-7P application, or AUIRFS8407-7P equivalent, key selection criteria include its ultra-low on-resistance under high-temperature bias, validated repetitive avalanche capability up to Tjmax, and D2Pak-7PIN thermal performance with 0.65°C/W RθJC.

Technical Context

This MOSFET employs advanced silicon processing to achieve sub-1.3 mΩ RDS(on) while sustaining 175°C junction operation - critical for under-hood automotive environments. Its gate charge profile (Qg = 150–225 nC) and low Ciss (7437 pF) support fast, efficient hard-switching in DC-DC converters and motor control inverters.

The integrated body diode exhibits 37 ns reverse recovery time (Tj = 25°C), 34 nC Qrr, and 3.5 V/ns peak dv/dt immunity - enabling reliable freewheeling in inductive loads without external snubbers. Repetitive avalanche energy (EAR) is rated per JEDEC AEC-Q101 conditions, with validated safe operating area up to 100A at 40V.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 40 V - Maximum blocking voltage for 12V/24V automotive battery rail protection and load switching.
RDS(on) typ. 1.0 mΩ @ VGS = 10V, Tj = 25°C - Enables <1.0 W conduction loss at 100A, reducing heatsink requirements.
ID (Package) 240 A @ TC = 25°C - Package-limited current defines PCB trace and mounting design for high-power battery switches.
EAS (tested) 508 mJ - Single-pulse avalanche energy rating verified per IRF test conditions (L = 0.069 mH, IAS = 100A).
RθJC 0.65 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting for >1 kW power dissipation.
Qg 150–225 nC - Total gate charge determines driver strength requirement for <100 ns switching transitions.
Tj max 175°C - Automotive-grade junction temperature rating supports operation in engine bay enclosures.

Pinout & Package

Supplied in a surface-mount D2Pak-7PIN (TO-263-7) package with exposed drain pad for enhanced thermal transfer. The 7-pin configuration includes three source terminals (S), one gate (G), and three drain terminals (D) - optimized for parallel bond-wire current sharing and low-inductance PCB layout.

Pin/Terminal Circuit Role Design Meaning
G Gate Control input; requires 10V drive for full enhancement; internal RG = 2.2 Ω limits ringing.
D (Pins 1, 2, 7) Drain High-current power output node; pins 1, 2, and 7 are internally connected to the exposed drain pad.
S (Pins 3, 4, 6) Source Power return path; three parallel pins reduce source inductance and improve current sharing in paralleled configurations.

Key Features

Feature Design Value
Ultra-low RDS(on) 1.0 mΩ typ. at 100A/10V - reduces conduction losses by >40% vs. legacy 40V automotive MOSFETs.
Repetitive avalanche rating Validated up to Tjmax - allows safe operation during unclamped inductive switching events without derating.
175°C junction rating Qualified per AEC-Q101 - ensures reliability in under-hood ambient temperatures exceeding 125°C.
Fast body diode recovery trr = 37 ns, Qrr = 34 nC - minimizes switching losses and EMI in synchronous rectification and H-bridge topologies.
D2Pak-7PIN thermal design RθJC = 0.65°C/W - enables >1.5 kW pulsed power handling with standard heatsink mounting.

Applications

Electric Power Steering (EPS) Battery Disconnect Switch

Use Scenario: High-side main power switch controlling 3-phase inverter for EPS motor assist.

IC Role / Device Role / Timing Role: Main power FET in 12V/48V hybrid EPS system; handles bidirectional current up to 200A during torque assist.

Use Value: 1.0 mΩ RDS(on) and 175°C rating ensure minimal thermal rise during sustained assist cycles, eliminating need for active cooling.

Use Scenario: Isolation switch between vehicle battery and high-power subsystems (e.g., ADAS, infotainment).

IC Role / Device Role / Timing Role: Fail-safe battery disconnect MOSFET controlled via isolated gate driver; must survive short-circuit events.

Use Value: 508 mJ single-pulse avalanche energy and 240A package current enable robust fault tolerance without fuse coordination delays.

Start/Stop Micro-Hybrid DC-DC Converter Primary Switch

Use Scenario: Load switch managing starter motor engagement and regenerative braking energy routing.

IC Role / Device Role / Timing Role: High-current bidirectional switch in 12V/48V bi-directional DC-DC converter for energy recovery.

Use Value: Low Qg (150 nC) and fast switching (tf = 51 ns) minimize dead-time losses during frequent start/stop transitions.

Use Scenario: Primary-side synchronous rectifier switch in 48V-to-12V buck converter for next-gen vehicle architectures.

IC Role / Device Role / Timing Role: High-frequency (100–300 kHz), high-duty-cycle power switch requiring low Coss and stable RDS(on) over temperature.

Use Value: Coss eff(TR) = 1735 pF and flat RDS(on) vs. temperature (Fig. 4) maintain efficiency across -40°C to +150°C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N4F7AG 40V, 220A, RDS(on) = 1.2 mΩ, DFN8 5x6 package, RθJC = 0.8°C/W Limited to lower peak current due to smaller thermal interface; not qualified for 175°C continuous operation. Preferred for space-constrained PCBs where thermal budget allows 0.15°C/W higher junction rise.
IXTH30N40P 400V, 30A, RDS(on) = 140 mΩ, TO-247 package, RθJC = 0.4°C/W Higher voltage rating but 14× higher RDS(on); unsuitable for <50A continuous automotive loads. Only viable if system requires 400V isolation margin and can accept >10× higher conduction loss.

Compared with STL220N4F7AG and IXTH30N40P, AUIRFS8407-7P uniquely balances ultra-low on-resistance, 240A package current, and 175°C junction rating - making it the only option qualified for sustained high-power EPS and battery-switching duty cycles in AEC-Q101-compliant designs.

Availability

AUIRFS8407-7P is available at Aetrix Electronics and suitable for electric power steering, battery disconnect, and start-stop micro-hybrid systems requiring stable component supply across extended automotive production lifecycles.

Supply support for AUIRFS8407-7P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with core expertise in silicon and wide-bandgap device engineering.

AUIRFS8407-7P belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine compartment and chassis-mounted power systems.

FAQ

What is the maximum continuous drain current for AUIRFS8407-7P at 100°C case temperature?

The continuous drain current is 216A at TC = 100°C and VGS = 10V, as specified in the Absolute Maximum Ratings table. This reflects silicon-limited current derating due to thermal constraints, distinct from the 240A package-limited rating at 25°C.

Does AUIRFS8407-7P support logic-level gate drive?

No - its gate threshold voltage (VGS(th)) ranges from 2.2V to 3.9V, but full enhancement requires VGS ≥ 10V to achieve the rated 1.0 mΩ RDS(on). Driving at 5V yields significantly higher on-resistance and is not recommended for high-current operation.

How is the D2Pak-7PIN pinout configured for PCB layout optimization?

Pins 1, 2, and 7 are internally bonded to the exposed drain pad; pins 3, 4, and 6 connect to source; pin 5 is the gate. This triple-source/triple-drain layout minimizes parasitic inductance and enables symmetric current distribution - critical for minimizing voltage spikes in high-di/dt EPS and battery-switching applications.

Is repetitive avalanche operation validated per AEC-Q101?

Yes - the device is qualified for repetitive avalanche up to Tjmax under conditions defined in AN-1005, with energy curves (Fig. 15) and current-vs.-pulsewidth limits (Fig. 14) provided in the datasheet. Operation must stay within the SOA boundary where ΔTj does not exceed 150°C above ambient.

AUIRFS8407-7P Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-7, D2PAK (6 Leads + Tab)
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
240A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
3.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:
225 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
7437 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
231W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-7

AUIRFS8407-7P FAQ

1.How can I place an order for AUIRFS8407-7P through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFS8407-7P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFS8407-7P reliable?

The price and inventory of AUIRFS8407-7P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFS8407-7P is usually 5 days.

3.What payment methods are accepted for AUIRFS8407-7P?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFS8407-7P transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFS8407-7P?

AUIRFS8407-7P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFS8407-7P order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFS8407-7P?

For technical support, including AUIRFS8407-7P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFS8407-7P requirements.

6.How does Aetrix verify that AUIRFS8407-7P is sourced from the original manufacturer or authorized distributors?

All AUIRFS8407-7P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFS8407-7P meets industry standards.

7.What is the process for return or replacement of AUIRFS8407-7P?

All AUIRFS8407-7P units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFS8407-7P, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFS8407-7P part is unused and in its original packaging.

Return procedure for AUIRFS8407-7P:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AUIRFS8407-7P Tags

  • AUIRFS8407-7P
  • AUIRFS8407-7P PDF
  • AUIRFS8407-7P Datasheet
  • AUIRFS8407-7P Specifications
  • AUIRFS8407-7P Images
  • Infineon Technologies
  • Infineon Technologies AUIRFS8407-7P
  • Buy AUIRFS8407-7P
  • AUIRFS8407-7P Price
  • AUIRFS8407-7P Distributor
  • AUIRFS8407-7P Supplier
  • AUIRFS8407-7P Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER