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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFS8407TRL

Name: AUIRFS8407TRL
Brand: Infineon Technologies
SKU: AUIRFS8407TRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFS8407TRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AUIRFS8407TRL.pdf

Description:: MOSFET N-CH 40V 195A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRFS8407TRL from Infineon Technologies is an automotive-grade N-channel D2Pak (TO-263) HEXFET® Power MOSFET with 40 V V_DS, 1.4 mΩ typ. R_DS(on) at V_GS = 10 V, 250 A silicon-limited continuous drain current, 175°C maximum junction temperature, and AEC-Q101 qualification - deployed in electric power steering (EPS) and battery switch control.

For engineers reviewing the AUIRFS8407TRL datasheet, AUIRFS8407TRL pinout, AUIRFS8407TRL application, or AUIRFS8407TRL equivalent, key selection criteria include low on-resistance under high-current DC-DC switching, repetitive avalanche capability up to T_jmax, thermal performance in constrained automotive chassis mounting, and RoHS-compliant lead-free packaging for solder-reflow compatibility.

Technical Context

This MOSFET employs advanced trench-gate process technology to minimize conduction losses while maintaining robust unclamped inductive switching (UIS) performance. Its 1.4 mΩ R_DS(on) enables high-efficiency operation in 12 V/48 V hybrid architectures, and its 175°C T_j rating supports sustained duty cycles in thermally demanding EPS motor drivers.

The device integrates a fast-recovery body diode (t_rr = 30 ns, Q_rr = 24 nC at T_j = 25°C) optimized for synchronous rectification and freewheeling in bidirectional DC-DC converters. Gate charge parameters (Q_g = 150–225 nC, Q_gd = 51 nC) support controlled turn-on/turn-off timing in high-frequency (>50 kHz) PWM control loops.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Supports 12 V automotive systems with margin against load-dump transients up to 36 V.
R_DS(on) typ.	1.4 mΩ at V_GS = 10 V - Enables <1.4 W conduction loss at 100 A, critical for EPS motor phase-leg efficiency.
I_D (silicon-limited)	250 A at T_C = 25°C - Sustains peak motor surge currents without derating in heatsink-mounted configurations.
E_AS (tested)	230 mJ - Confirmed single-pulse avalanche energy allows safe operation during inductive flyback in start/stop battery switches.
T_J max	175°C - Permits extended operation in engine-bay environments where ambient exceeds 105°C.
Q_g	150–225 nC - Determines gate driver power requirement and switching transition time in 100–200 kHz DC-DC controllers.
V_GS(th)	2.0–4.0 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers in micro-hybrid control units.

Pinout & Package

Package: D2Pak (TO-263), surface-mount, isolated tab, 3-pin configuration with drain-connected tab for direct thermal coupling to PCB copper pour or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	High-impedance MOSFET control input; requires ≤2.2 Ω series gate resistor to damp oscillation during 100+ A switching transitions.
Pin 2 (D)	Drain	High-current output node connected internally to metal tab; must be routed over ≥2 oz copper with thermal vias for R_θJA ≤ 40°C/W.
Pin 3 (S)	Source	Power return path and gate reference; forms Kelvin sense point for closed-loop current monitoring in EPS motor drivers.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	1.4 mΩ typ. reduces I²R losses by >35% vs. legacy 2.0 mΩ automotive MOSFETs at 100 A, directly improving EPS system efficiency.
AEC-Q101 qualified	Validated per AEC-Q101-002/005 for automotive underhood use - includes HBM ±4 kV, CDM ±2 kV, and 1000-cycle temperature cycling.
Repetitive avalanche rated	Rated for repeated UIS events up to T_jmax; enables elimination of external snubbers in battery disconnect circuits.
Fast body diode	t_rr = 30 ns, Q_rr = 24 nC - Minimizes reverse recovery loss and EMI in synchronous buck converters for 48 V micro-hybrids.
Lead-free & RoHS	Compatible with Pb-free reflow profiles (peak 260°C); meets EU Directive 2011/65/EU and J-STD-020 MSL1 handling requirements.

Applications

Electric Power Steering (EPS)

Battery Disconnect Switch

Use Scenario: High-current H-bridge motor driver controlling 12 V brushless EPS assist motor during parking maneuvers.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in three-phase inverter leg; handles 200 A peak phase current with <100 ns dead-time control.

Use Value: 1.4 mΩ R_DS(on) limits conduction loss to <2.8 W per FET at 100 A, reducing heatsink size by 40% versus 2.0 mΩ alternatives.

Use Scenario: Solid-state main battery contactor replacement in 12 V start-stop systems, enabling rapid, bounce-free engagement/disengagement.

IC Role / Device Role / Timing Role: Single-pole, normally-open power switch placed between battery and vehicle electrical distribution module.

Use Value: 230 mJ tested E_AS ensures survival during 10 ms inductive interruption events without external clamping diodes.

Micro-Hybrid DC-DC Converter

Heavy-Duty Load Control

Use Scenario: Bidirectional 12 V ↔ 48 V DC-DC converter managing regenerative braking energy transfer in mild hybrid vehicles.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side buck-boost stage; operates at 150 kHz with forced commutation.

Use Value: Fast 30 ns t_rr and low Q_rr reduce reverse recovery loss by 65% vs. standard MOSFETs, increasing conversion efficiency from 92% to 94.5%.

Use Scenario: High-power auxiliary load switch for HVAC compressors, seat heaters, or trailer lighting in commercial trucks.

IC Role / Device Role / Timing Role: High-current, low-duty-cycle load enable switch controlled via CAN-based body controller.

Use Value: 175°C T_j rating permits continuous 150 A operation in sealed enclosures without active cooling, simplifying mechanical design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 0.75 mΩ (lower), but V_DS = 40 V same; Q_g = 195 nC (higher); TO-263 package.	Higher conduction efficiency but slower switching; better for low-frequency, high-current EPS, less ideal for 150+ kHz DC-DC.	Select when minimizing I²R loss dominates over switching loss; verify gate driver can source 2.5 A peak.
IRFB4115PBF	R_DS(on) = 3.2 mΩ (higher); V_DS = 150 V; TO-220AB package; non-automotive grade.	Higher voltage margin but 2.3× higher conduction loss; lacks AEC-Q101 and 175°C rating.	Only suitable for non-automotive industrial prototypes; not recommended for production EPS or start-stop systems.

Compared with STL220N4F7AG and IRFB4115PBF, AUIRFS8407TRL delivers optimal balance of ultra-low R_DS(on), automotive qualification, and fast switching - making it the preferred choice for production-critical 12 V/48 V automotive power stages where reliability, thermal headroom, and efficiency are jointly constrained.

Availability

AUIRFS8407TRL is available at Aetrix Electronics and suitable for electric power steering (EPS), battery disconnect switches, and micro-hybrid DC-DC converters requiring stable component supply across multi-year automotive production programs.

Supply support for AUIRFS8407TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

AUIRFS8407TRL belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-current, high-reliability switching in engine compartment and chassis-mounted automotive subsystems.

FAQ

What is the maximum continuous drain current for AUIRFS8407TRL at 100°C case temperature?

At T_C = 100°C, the continuous drain current is 195 A (package-limited). This value reflects thermal derating due to reduced heat dissipation at elevated case temperatures and assumes proper PCB copper area and thermal interface material. It is lower than the 250 A silicon-limited rating at 25°C, confirming thermal design must prioritize junction-to-case path integrity.

Does AUIRFS8407TRL require a gate driver IC, or can it be driven directly from a microcontroller GPIO?

AUIRFS8407TRL cannot be reliably driven directly from a standard MCU GPIO due to its 150–225 nC total gate charge and 2.2 Ω internal gate resistance. A dedicated gate driver (e.g., Infineon 1EDN7512B) is required to achieve <100 ns turn-on/turn-off times and prevent shoot-through in bridge configurations. GPIO-only drive risks thermal runaway and premature failure.

How does the body diode performance compare to discrete Schottky diodes in high-frequency DC-DC applications?

The integrated body diode has t_rr = 30 ns and Q_rr = 24 nC at 25°C - significantly faster and lower charge than standard FRD diodes but slower than optimized Schottky diodes (t_rr ≈ 0 ns, Q_rr ≈ 0 nC). In 150 kHz DC-DC converters, it enables synchronous rectification without external diodes, though efficiency gains are ~1.5% less than discrete Schottky solutions.

Is the D2Pak tab electrically isolated, and what is the recommended mounting torque?

Yes, the D2Pak metal tab is electrically isolated from all pins and serves solely as the drain connection. The recommended mounting torque for the M3 screw is 1.1 N·m (10 lbf·in), applied with a calibrated torque screwdriver. Over-torque risks die cracking; under-torque increases thermal resistance and may cause thermal runaway during sustained 200 A operation.

AUIRFS8407TRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 225 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7330 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

AUIRFS8407TRL FAQ

1.How can I place an order for AUIRFS8407TRL through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFS8407TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFS8407TRL reliable?

The price and inventory of AUIRFS8407TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFS8407TRL is usually 5 days.

3.What payment methods are accepted for AUIRFS8407TRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFS8407TRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFS8407TRL?

AUIRFS8407TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFS8407TRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFS8407TRL?

For technical support, including AUIRFS8407TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFS8407TRL requirements.

6.How does Aetrix verify that AUIRFS8407TRL is sourced from the original manufacturer or authorized distributors?

All AUIRFS8407TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFS8407TRL meets industry standards.

7.What is the process for return or replacement of AUIRFS8407TRL?

All AUIRFS8407TRL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFS8407TRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFS8407TRL part is unused and in its original packaging.

Return procedure for AUIRFS8407TRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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