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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFS8408-7TRL

Name: AUIRFS8408-7TRL
Brand: Infineon Technologies
SKU: AUIRFS8408-7TRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFS8408-7TRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Datasheet:: AUIRFS8408-7TRL.pdf

Description:: MOSFET N-CH 40V 240A D2PAK

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Product details

Overview

AUIRFS8408-7TRL from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET in D2PAK-7L (TO-263-7) package, rated for 40 V V_DS, 0.70 mΩ typ. R_DS(on) at V_GS = 10 V, and 240 A continuous drain current (package-limited). It integrates a low-loss body diode and supports high-efficiency synchronous rectification in automotive 12 V battery-powered systems such as starter motor drivers and DC-DC converters.

For engineers reviewing the AUIRFS8408-7TRL datasheet, AUIRFS8408-7TRL pinout, AUIRFS8408-7TRL application, or AUIRFS8408-7TRL equivalent, key selection criteria include its 0.51 °C/W junction-to-case thermal resistance, 210 nC total gate charge, avalanche-rated operation up to 501 mJ (single-pulse), and AEC-Q101 qualification for under-hood automotive use.

Technical Context

This device employs trench-gate silicon technology optimized for low R_DS(on) and fast switching in high-current, low-voltage DC power paths. Its gate threshold voltage (2.2–3.9 V) enables robust 3.3 V/5 V logic-level drive compatibility while maintaining noise immunity.

The integrated body diode exhibits 0.9–1.3 V forward voltage at 100 A and 44 ns reverse recovery time (T_J = 25 °C), supporting efficient unidirectional energy transfer in buck converters and motor H-bridge freewheeling paths without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage in automotive 12 V systems with load-dump transients up to 40 V.
R_DS(on) typ.	0.70 mΩ at V_GS = 10 V, T_J = 25 °C - Enables <1.5 W conduction loss at 200 A, critical for high-current battery switches.
I_D (Package)	240 A @ T_C = 25 °C - Sustains peak currents in starter solenoid control and e-fuse applications without derating.
Q_g	210 nC max. - Determines gate driver power requirement; compatible with standard 2 A peak gate drivers.
E_AS	501 mJ single-pulse - Withstands inductive turn-off energy in motor drives without snubbers or clamps.
R_θJC	0.51 °C/W - Allows direct heatsink mounting for >200 W dissipation with ≤100 °C temperature rise above case.
V_GS(th)	2.2–3.9 V - Ensures reliable turn-on with microcontroller GPIOs while avoiding false triggering from noise.

Pinout & Package

Package: D2PAK-7L (TO-263-7), surface-mount, thermally enhanced with exposed drain pad. Pin 1–7 arranged linearly: G–D–S–S–S–S–G (Gate–Drain–Source×4–Gate).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 & Pin 7	Gate	Low-impedance input for PWM control; dual gate pins reduce gate loop inductance and improve switching stability.
Pin 2	Drain	Main high-side power node; connected to internal die drain metallization and exposed copper pad for thermal conduction.
Pins 3–6	Source	Four parallel source terminals minimize source inductance and voltage drop during high di/dt commutation.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood operation from −55 °C to +175 °C junction temperature.
Ultra-low R_DS(on)	0.70 mΩ typ. reduces conduction losses by >30% vs. legacy 40 V MOSFETs in 200 A battery disconnects.
Optimized body diode	44 ns t_rr, 43 nC Q_rr - Enables zero-voltage switching in synchronous buck topologies without external Schottky diodes.
High avalanche ruggedness	501 mJ E_AS - Eliminates need for external TVS clamping in inductive load switching (e.g., fuel injectors, solenoids).
Thermally enhanced D2PAK-7L	0.51 °C/W R_θJC - Supports >200 W continuous power dissipation with minimal heatsink area in space-constrained ECUs.

Applications

Automotive Starter Motor Control

12 V Battery Disconnect Switch

Use Scenario: High-current switching of starter solenoid coil and main motor circuit during engine cranking.

IC Role / Device Role / Timing Role: Main power switch in high-side configuration; handles 300+ A pulsed current with <100 ns turn-on delay.

Use Value: Low R_DS(on) minimizes voltage drop across switch during cranking, ensuring ≥9.6 V at starter motor terminals per ISO 16750-2.

Use Scenario: Isolating auxiliary battery banks (e.g., start-stop, camper, marine) from main vehicle system during shutdown or fault conditions.

IC Role / Device Role / Timing Role: Bidirectional e-fuse with overcurrent protection; leverages body diode for reverse polarity protection.

Use Value: 240 A package rating and 501 mJ avalanche energy enable single-device isolation without parallel MOSFETs or fuses.

48 V–12 V DC-DC Converter Primary Switch

Electric Power Steering (EPS) Motor Driver

Use Scenario: High-frequency (100–300 kHz) synchronous rectification in bidirectional buck-boost converters for mild hybrid vehicles.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier; operates with 210 nC gate charge and 125 ns rise time for <1% switching loss.

Use Value: Optimized C_oss (1540 pF) and C_rss (1060 pF) reduce Miller effect, enabling stable 300 kHz operation with standard gate drivers.

Use Scenario: Half-bridge leg in three-phase inverter driving 12 V EPS brushless DC motor (peak 150 A phase current).

IC Role / Device Role / Timing Role: High-current, low-loss power stage switch; uses four parallel source pins to suppress parasitic oscillation during 500 A/μs di/dt events.

Use Value: Dual gate pins and 0.51 °C/W thermal resistance maintain <150 °C junction temperature during sustained 120 A RMS operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 40 V power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 0.47 mΩ typ., Q_g = 240 nC, no AEC-Q101 certification	Higher efficiency but limited to industrial/commercial use; lacks automotive qualification and avalanche rating.	Select only for non-automotive designs where qualification is not required and lower R_DS(on) justifies higher gate drive power.
IRL1404ZPBF	R_DS(on) = 3.4 mΩ min., 160 A package rating, TO-220AB package, R_θJC = 1.25 °C/W	Lower current capability and inferior thermal performance; requires larger heatsink and cannot support 240 A continuous loads.	Use only for cost-sensitive, lower-power (<80 A) applications where D2PAK-7L footprint and thermal density are unnecessary.

Compared with STL220N4F7AG and IRL1404ZPBF, AUIRFS8408-7TRL uniquely combines AEC-Q101 qualification, 240 A package rating, 0.51 °C/W thermal resistance, and 501 mJ avalanche energy-making it the only option qualified for high-reliability automotive power switching where thermal density and transient robustness are mandatory.

Availability

AUIRFS8408-7TRL is available at Aetrix Electronics and suitable for automotive starter motor control, 12 V battery disconnect switches, and 48 V–12 V DC-DC converter primary switches requiring stable component supply across multi-year production cycles.

Supply support for AUIRFS8408-7TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to IATF 16949.

AUIRFS8408-7TRL belongs to Infineon's automotive-grade HEXFET® Power MOSFET product line, engineered specifically for high-current, high-reliability 12 V/48 V automotive power distribution and motor control applications.

FAQ

What is the maximum continuous drain current for AUIRFS8408-7TRL at 100 °C case temperature?

At T_C = 100 °C, the continuous drain current is 130 A (silicon-limited) and 130 A (package-limited), as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat dissipation capacity at elevated case temperatures, requiring appropriate heatsinking for sustained operation.

Does AUIRFS8408-7TRL require a gate resistor for safe switching in automotive applications?

Yes-a gate resistor (typically 2.2–10 Ω) is required to control dV/dt and prevent parasitic oscillation during switching. The device's 210 nC gate charge and 2.0 Ω internal gate resistance necessitate external resistance to limit peak gate current and ensure clean turn-on/turn-off waveforms in noisy automotive environments.

Can AUIRFS8408-7TRL be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (0.030 V/°C V_(BR)DSS tempco and on-resistance increase with temperature) ensures inherent current sharing when paralleled. However, matched layout symmetry, identical gate drive paths, and Kelvin-source routing are mandatory to avoid current imbalance and thermal runaway.

Is the body diode in AUIRFS8408-7TRL suitable for synchronous rectification?

Yes-the body diode has 44 ns reverse recovery time and 43 nC reverse recovery charge at T_J = 25 °C, enabling efficient synchronous rectification in buck converters up to 300 kHz. Its low V_SD (0.9–1.3 V) and soft recovery characteristics reduce switching losses compared to discrete Schottky diodes in high-current 12 V outputs.

AUIRFS8408-7TRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 240A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 315 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10250 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 294W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-900

AUIRFS8408-7TRL FAQ

1.How can I place an order for AUIRFS8408-7TRL through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFS8408-7TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFS8408-7TRL reliable?

The price and inventory of AUIRFS8408-7TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFS8408-7TRL is usually 5 days.

3.What payment methods are accepted for AUIRFS8408-7TRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFS8408-7TRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFS8408-7TRL?

AUIRFS8408-7TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFS8408-7TRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFS8408-7TRL?

For technical support, including AUIRFS8408-7TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFS8408-7TRL requirements.

6.How does Aetrix verify that AUIRFS8408-7TRL is sourced from the original manufacturer or authorized distributors?

All AUIRFS8408-7TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFS8408-7TRL meets industry standards.

7.What is the process for return or replacement of AUIRFS8408-7TRL?

All AUIRFS8408-7TRL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFS8408-7TRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFS8408-7TRL part is unused and in its original packaging.

Return procedure for AUIRFS8408-7TRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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