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Infineon Technologies AUIRFS8408-7TRR
- Part No.:
- AUIRFS8408-7TRR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
- Datasheet:
-
AUIRFS8408-7TRR.pdf
- Description:
- MOSFET N-CH 40V 240A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,489
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Product details
Overview
AUIRFS8408-7TRR from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET in D2PAK-7L package, rated for 40 V VDS, 0.70 mΩ typ. RDS(on), and 240 A continuous drain current (package-limited) at TC = 25°C. It serves as a high-efficiency synchronous rectifier or main switch in automotive DC-DC converters and battery disconnect circuits.
For engineers reviewing the AUIRFS8408-7TRR datasheet, AUIRFS8408-7TRR pinout, AUIRFS8408-7TRR application, or AUIRFS8408-7TRR equivalent, key selection criteria include its ultra-low RDS(on), robust avalanche energy rating (EAS = 501 mJ), integrated body diode with 44 ns trr, and AEC-Q101 qualification for under-hood automotive use.
Technical Context
This device employs trench-gate silicon technology optimized for low conduction loss and fast switching in 12 V/48 V automotive power systems. Its gate threshold voltage (VGS(th) = 2.2–3.9 V) enables direct drive from standard 3.3 V or 5 V controllers, while Qg = 210–315 nC supports efficient gate driving at high-frequency PWM operation.
The MOSFET integrates a robust intrinsic body diode with VSD = 0.9–1.3 V and Qrr = 43–44 nC at TJ = 25°C, enabling reliable synchronous rectification without external diodes. Thermal resistance RθJC = 0.51 °C/W ensures effective heat transfer to heatsink-mounted PCBs in high-power modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 12 V/48 V automotive battery rails including load dump transients. |
| RDS(on) typ. | 0.70 mΩ - Enables ≤1.5 W conduction loss at 200 A, critical for >98% efficiency in high-current DC-DC stages. |
| ID (Package Limited) | 240 A @ TC = 25°C - Supports high-current battery management and motor control paths without parallel devices. |
| EAS | 501 mJ - Withstands unclamped inductive switching events in solenoid drivers and starter relays per AEC-Q101 stress testing. |
| trr | 44 ns - Minimizes reverse recovery loss during hard-switched synchronous rectification in buck converters. |
| Qg | 210–315 nC - Determines gate driver power requirement; compatible with common automotive gate drivers (e.g., IR21xx, UCC2753x). |
| VGS(th) | 2.2–3.9 V - Ensures turn-on with standard logic-level microcontrollers and avoids false triggering from noise. |
Pinout & Package
Supplied in a surface-mount D2PAK-7L (TO-263-7) package with exposed drain pad for thermal performance and 7 terminals: 3× Drain (pins 1, 2, 3), 2× Source (pins 5, 6), 1× Gate (pin 4), and 1× Kelvin Source (pin 7) for accurate gate drive referencing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 (Drain) | Main power drain connection | Parallel drain terminals reduce current density and parasitic inductance in high-di/dt applications. |
| 4 (Gate) | Control input | Standard MOSFET gate terminal; requires <2.0 Ω series resistance to damp ringing in high-speed switching. |
| 5, 6 (Source) | Main power source return | Low-inductance source path for high-current loop closure; connects to power ground plane. |
| 7 (Kelvin Source) | Sense reference for gate drive | Provides isolated source reference to eliminate PCB trace IR drop from gate control loop, improving switching accuracy. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive under-hood operation up to +175°C junction temperature and 1000-hour HTOL testing. |
| Ultra-low RDS(on) | 0.70 mΩ typ. reduces I²R losses by >40% vs. legacy 40 V MOSFETs, directly lowering thermal design burden. |
| Kelvin Source pin | Enables precise gate-to-source voltage regulation independent of high-current source path voltage drop. |
| High EAS rating | 501 mJ single-pulse avalanche energy allows safe operation in unclamped inductive switching without snubbers. |
| Fast body diode | 44 ns reverse recovery time and 1.9 A peak reverse recovery current minimize shoot-through risk in synchronous rectifiers. |
Applications
| Automotive DC-DC Converters | Battery Disconnect Units (BDU) |
|---|---|
|
Use Scenario: 12 V to 48 V bidirectional DC-DC converter in mild hybrid electric vehicles (MHEV) for torque assist and regenerative braking. IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier MOSFET operating at 100–200 kHz PWM frequency with zero-voltage switching (ZVS) capability. Use Value: 0.70 mΩ RDS(on) cuts conduction loss by 3.2 W vs. 1.2 mΩ alternatives at 200 A, enabling smaller heatsinks and higher power density. |
Use Scenario: High-current contactor replacement in 48 V battery packs for EVs and commercial vehicles, handling up to 300 A fault current. IC Role / Device Role / Timing Role: Main isolation switch controlled via isolated gate driver, activated during overcurrent or thermal shutdown events. Use Value: 501 mJ EAS withstands 300 A × 40 V inductive interruption without failure, eliminating need for external TVS clamping. |
| On-Board Charger (OBC) Output Stage | Electric Power Steering (EPS) Motor Drive |
|
Use Scenario: Secondary-side synchronous rectification in 6.6 kW OBC AC/DC stage, converting 400 V DC to 48 V for vehicle auxiliary systems. IC Role / Device Role / Timing Role: Low-side switch in LLC resonant converter output rectifier, commutated with precise dead-time control. Use Value: 44 ns trr and 43 nC Qrr reduce reverse recovery loss by 65% vs. standard Si MOSFETs, improving full-load efficiency by 0.8%. |
Use Scenario: High-current H-bridge phase leg in 12 V EPS motor controller, delivering up to 250 A peak to brushless DC motor windings. IC Role / Device Role / Timing Role: Low-side power switch with Kelvin Source feedback for accurate current sensing and gate control stability. Use Value: Kelvin Source pin eliminates 50–100 mV gate drive error from source inductance, preventing unintended shoot-through during 100 A/μs di/dt transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current automotive N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | RDS(on) = 0.47 mΩ (lower), but VDS = 40 V same; no Kelvin Source; Qg = 260 nC; AEC-Q101 qualified. | Lacks Kelvin Source-unsuitable where gate drive accuracy under high di/dt is critical; better for cost-sensitive non-Kelvin designs. | Select when lowest possible conduction loss is primary goal and gate drive layout allows tight source routing. |
| IXTH300N04S5 | RDS(on) = 0.35 mΩ (lower), VDS = 40 V; TO-247 package; no Kelvin Source; Qg = 360 nC; not AEC-Q101 qualified. | Higher Qg increases gate driver loss; TO-247 requires through-hole assembly; not automotive-qualified for mission-critical use. | Select only for industrial/non-automotive applications requiring maximum current density and thermal margin beyond D2PAK limits. |
Compared with STL220N4F7AG and IXTH300N04S5, AUIRFS8408-7TRR uniquely balances ultra-low RDS(on), Kelvin Source precision, AEC-Q101 compliance, and surface-mount D2PAK-7L manufacturability-making it optimal for safety-critical automotive power stages where layout-induced gate errors must be eliminated.
Availability
AUIRFS8408-7TRR is available at Aetrix Electronics and suitable for automotive battery management systems, 48 V DC-DC converters, and electric power steering motor drives requiring stable component supply across multi-year production cycles.
Supply support for AUIRFS8408-7TRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive ICs, and security solutions, with global manufacturing and quality certification to ISO/TS 16949.
AUIRFS8408-7TRR belongs to Infineon's OptiMOS™ 5 automotive power MOSFET family, engineered specifically for high-efficiency, high-reliability 12 V/48 V automotive power conversion and motor control applications.
FAQ
What is the purpose of the Kelvin Source (pin 7) on AUIRFS8408-7TRR?
The Kelvin Source pin provides a dedicated, low-current return path for the gate driver's reference node, isolating it from high di/dt voltage drops across the main source bond wires and PCB traces. This ensures accurate VGS control during fast switching, preventing false turn-off or oscillation in high-current automotive inverters and DC-DC converters.
Can AUIRFS8408-7TRR be used in paralleled configurations?
Yes-its positive temperature coefficient of RDS(on) and matched threshold voltage distribution enable stable current sharing. For parallel operation, use identical gate resistors, symmetrical PCB layout, and Kelvin Source connections to each device's gate driver to maintain balanced VGS and prevent thermal runaway.
Is AUIRFS8408-7TRR suitable for 48 V battery disconnect in EV applications?
Yes-it is AEC-Q101 qualified, rated for 240 A continuous current at TC = 25°C, and delivers 501 mJ single-pulse avalanche energy. When mounted on a 2-oz copper heatsink with thermal interface material, it safely interrupts 300 A fault currents in 48 V battery disconnect units per ISO 6469-3 requirements.
How does the body diode performance compare to discrete Schottky alternatives?
The integrated body diode has VSD = 0.9–1.3 V and trr = 44 ns at 100 A, offering lower forward drop than most 40 V Schottky diodes above 50 A and eliminating separate component count. While Schottkys have faster trr, this MOSFET's diode is optimized for synchronous rectification where controlled reverse recovery is preferred over zero-recovery artifacts.
AUIRFS8408-7TRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:
- 3.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 315 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 10250 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 294W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-7-900
AUIRFS8408-7TRR FAQ
1.How can I place an order for AUIRFS8408-7TRR through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRFS8408-7TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRFS8408-7TRR reliable?
The price and inventory of AUIRFS8408-7TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFS8408-7TRR is usually 5 days.
3.What payment methods are accepted for AUIRFS8408-7TRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFS8408-7TRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRFS8408-7TRR?
AUIRFS8408-7TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRFS8408-7TRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRFS8408-7TRR?
For technical support, including AUIRFS8408-7TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFS8408-7TRR requirements.
6.How does Aetrix verify that AUIRFS8408-7TRR is sourced from the original manufacturer or authorized distributors?
All AUIRFS8408-7TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFS8408-7TRR meets industry standards.
7.What is the process for return or replacement of AUIRFS8408-7TRR?
All AUIRFS8408-7TRR units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFS8408-7TRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRFS8408-7TRR part is unused and in its original packaging.
Return procedure for AUIRFS8408-7TRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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