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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFS8409TRL

Name: AUIRFS8409TRL
Brand: Infineon Technologies
SKU: AUIRFS8409TRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFS8409TRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AUIRFS8409TRL.pdf

Description:: MOSFET N-CH 40V 195A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRFS8409TRL from Infineon Technologies is an automotive-grade N-channel HEXFET® Power MOSFET in D2PAK (TO-263) package, rated for 40 V V_DS, 1.2 mΩ max R_DS(on) at 10 V V_GS, and 195 A continuous drain current (package-limited). It delivers ultra-low conduction loss, 175°C junction operation, and robust repetitive avalanche capability-designed specifically for high-current DC-DC converters and electric power steering (EPS) motor control stages.

For engineers reviewing the AUIRFS8409TRL datasheet, AUIRFS8409TRL pinout, AUIRFS8409TRL application, or AUIRFS8409TRL equivalent, key selection criteria include its 1.2 mΩ on-resistance at 10 V gate drive, 450 nC total gate charge, 2130 pF output capacitance, 175°C thermal rating, and automotive qualification per AEC-Q101.

Technical Context

This MOSFET employs advanced trench-gate silicon process technology to achieve sub-1.3 mΩ on-resistance while maintaining fast switching performance (t_r = 105 ns, t_f = 100 ns) and low gate charge (Q_g = 450 nC typ). Its body diode exhibits 52 ns reverse recovery time and 97 nC Q_rr at 100 A, enabling efficient synchronous rectification in high-frequency buck converters.

The device supports unclamped inductive switching with 1360 mJ single-pulse avalanche energy and allows repetitive avalanche up to T_jmax under defined conditions (L = 0.15 mH, I_AS = 100 A, R_G = 50 Ω). Thermal design is enabled by R_θJC = 0.40 °C/W and a flat case optimized for direct heatsink mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V automotive bus systems with margin against load dump transients.
R_DS(on) max	1.2 mΩ @ V_GS = 10 V - Enables <1.2 W conduction loss at 100 A, critical for EPS and battery-switch thermal management.
I_D cont (pkg)	195 A @ T_C = 25°C - Package-limited current defines PCB trace and heatsink sizing for sustained high-power operation.
Q_g max	450 nC - Determines gate driver power requirement and switching loss in 100–500 kHz DC-DC topologies.
E_AS	1360 mJ - Specifies single-pulse avalanche ruggedness for fault-tolerant motor control and inductive load switching.
T_J max	175°C - Enables operation in under-hood environments without derating in EPS or start-stop modules.
C_oss	2130 pF - Impacts hard-switching losses and EMI in high-side configurations; used with C_iss = 14240 pF for snubber design.

Pinout & Package

Package: D2PAK (TO-263), surface-mount, isolated tab, 3-pin configuration with drain-connected tab for thermal and electrical integration.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal requiring ≤10 V drive; 2.1 Ω internal gate resistance limits ringing but increases turn-on delay.
Pin 2 (D)	Drain	High-current output node connected to exposed copper tab; must be soldered to large thermal pad for R_θJC = 0.40 °C/W performance.
Pin 3 (S)	Source	Power return path and gate reference; low-inductance layout essential to minimize V_GS instability during fast dV/dt transitions.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.97 mΩ typ. @ 10 V - Reduces conduction loss by >30% vs. prior-gen 40 V MOSFETs in 150–200 A EPS inverters.
175°C junction rating	Rated for continuous operation up to 175°C - Eliminates need for external temperature derating in sealed EPS housings.
Repetitive avalanche capability	Tested per Fig. 14/15 - Supports reliable operation during short-circuit events in battery disconnect switches without external clamping.
Fast body diode recovery	t_rr = 52 ns, Q_rr = 97 nC - Minimizes reverse recovery loss and EMI in synchronous buck regulators above 200 kHz.
AEC-Q101 qualified	Automotive stress-tested - Validated for vibration, temperature cycling, and HTOL per JEDEC standards for safety-critical EPS and micro-hybrid systems.

Applications

Electric Power Steering (EPS)

Battery Disconnect Switch

Use Scenario: High-current H-bridge motor driver controlling 12 V or 48 V steering assist motors in passenger vehicles.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional 150–200 A peak currents with <100 ns switching transitions.

Use Value: 1.2 mΩ R_DS(on) reduces heat generation by 40% vs. 2 mΩ alternatives, enabling smaller heatsinks and higher torque density.

Use Scenario: Solid-state replacement for mechanical relays in 12 V battery main disconnect circuits for start-stop and micro-hybrid systems.

IC Role / Device Role / Timing Role: Single-pole, high-current switch isolating starter battery from loads during engine cranking or fault conditions.

Use Value: 1360 mJ E_AS withstands inductive kickback from solenoid coils and wiring harness inductance without failure.

DC-DC Converter (48 V–12 V)

Heavy-Duty Motor Control

Use Scenario: Synchronous rectifier in high-efficiency bidirectional buck-boost converter for 48 V mild-hybrid architectures.

IC Role / Device Role / Timing Role: Secondary-side power switch operating at 200–300 kHz with zero-voltage switching (ZVS) support.

Use Value: 52 ns t_rr and low Q_rr minimize dead-time losses and improve light-load efficiency beyond 95%.

Use Scenario: Inverter leg switch in HVAC compressor or cooling fan drives requiring >150 A continuous current in commercial vehicle platforms.

IC Role / Device Role / Timing Role: High-current, high-reliability power switch with integrated thermal protection via junction sensing.

Use Value: 175°C T_J rating enables full-rated current delivery even at ambient temperatures up to 105°C under hood.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 40 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 0.75 mΩ max, Q_g = 420 nC, TO-263 package, AEC-Q101 qualified	Lower on-resistance but higher C_oss (2500 pF); requires stronger gate driver due to higher Q_gd	Preferred where conduction loss dominates and gate drive capability supports higher Q_g.
IRFB4115PBF	R_DS(on) = 2.2 mΩ max, TO-220AB package, non-automotive grade, 175°C rating	No AEC-Q101 qualification; lower current rating (110 A pkg-limited); higher thermal resistance (R_θJA = 62 °C/W)	Suitable only for non-safety-critical industrial prototypes lacking automotive compliance requirements.

Compared with STL220N4F7AG, AUIRFS8409TRL trades 0.45 mΩ higher R_DS(on) for lower C_oss and proven avalanche ruggedness in EPS duty cycles; versus IRFB4115PBF, it adds AEC-Q101 validation, 75% higher current rating, and 60% better thermal resistance-making it the only qualified solution for production automotive power stages.

Availability

AUIRFS8409TRL is available at Aetrix Electronics and suitable for Electric Power Steering (EPS), Battery Disconnect Switch, and DC-DC Converter (48 V–12 V) applications requiring stable component supply across automotive production lifecycles.

Supply support for AUIRFS8409TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

AUIRFS8409TRL belongs to the automotive-qualified HEXFET® Power MOSFET product line, engineered for high-current, high-reliability switching in safety-critical vehicle subsystems including steering, braking, and energy management.

FAQ

What is the maximum continuous drain current for AUIRFS8409TRL at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 289 A (silicon-limited), as specified in the Absolute Maximum Ratings table. This value assumes ideal heatsinking and accounts for R_DS(on) increase with temperature, but practical design must respect the 195 A package-limited rating to avoid bond-wire failure.

Does AUIRFS8409TRL support synchronous rectification in high-frequency DC-DC converters?

Yes-its 52 ns reverse recovery time, 97 nC Q_rr, and low 2130 pF C_oss enable efficient synchronous rectification up to 500 kHz. The fast body diode minimizes shoot-through risk and reduces dead-time losses, especially when paired with matched gate drivers and optimized PCB layout.

Is the exposed drain tab electrically isolated from the PCB mounting surface?

No-the drain tab is internally connected to Pin 2 (Drain) and must be electrically isolated from the heatsink or PCB ground plane using insulating thermal pads or ceramic substrates. Direct metal-to-metal contact without isolation creates a short circuit between drain and system ground.

What gate voltage is required to fully enhance AUIRFS8409TRL in automotive 12 V systems?

A minimum of 10 V gate-to-source voltage is required to achieve the specified 1.2 mΩ R_DS(on); V_GS(th) ranges from 2.2 V to 3.9 V, but full enhancement occurs above 6 V. In 12 V systems, gate drivers must sustain ≥10 V under load to ensure low-loss operation across temperature and aging.

AUIRFS8409TRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 450 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 14240 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

AUIRFS8409TRL FAQ

1.How can I place an order for AUIRFS8409TRL through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFS8409TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFS8409TRL reliable?

The price and inventory of AUIRFS8409TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFS8409TRL is usually 5 days.

3.What payment methods are accepted for AUIRFS8409TRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFS8409TRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFS8409TRL?

AUIRFS8409TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFS8409TRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFS8409TRL?

For technical support, including AUIRFS8409TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFS8409TRL requirements.

6.How does Aetrix verify that AUIRFS8409TRL is sourced from the original manufacturer or authorized distributors?

All AUIRFS8409TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFS8409TRL meets industry standards.

7.What is the process for return or replacement of AUIRFS8409TRL?

All AUIRFS8409TRL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFS8409TRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFS8409TRL part is unused and in its original packaging.

Return procedure for AUIRFS8409TRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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