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Infineon Technologies AUIRFSA8409-7P

Part No.:
AUIRFSA8409-7P
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-7, D2PAK (6 Leads + Tab)
Datasheet:
AetrixAUIRFSA8409-7P.pdf
Description:
MOSFET N-CH 40V 523A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,276

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Product details

Overview

AUIRFSA8409-7P from Infineon is an automotive-grade N-channel HEXFET® Power MOSFET in D2PAK-7TP package, rated for 40 V VDSS, 0.50 mΩ typ. RDS(on) at VGS = 10 V, and 360 A continuous drain current (package-limited). It operates up to +175 °C junction temperature and supports high-current switching in electric power steering and battery disconnect circuits.

For engineers reviewing the AUIRFSA8409-7P datasheet, AUIRFSA8409-7P pinout, AUIRFSA8409-7P application, or AUIRFSA8409-7P equivalent, key selection criteria include its ultra-low on-resistance, 1440 A pulsed drain capability, repetitive avalanche rating, thermal derating factor (2.5 W/°C), and automotive qualification per AEC-Q101.

Technical Context

This device employs advanced silicon process technology to achieve thermally robust, low-RDS(on) performance optimized for high-efficiency DC-DC conversion and load switching in 12 V/48 V automotive systems. Its gate charge profile (Qg = 305–460 nC) and fast switching (tr = 94 ns, tf = 90 ns) support high-frequency operation while maintaining low conduction and switching losses.

The integrated body diode exhibits low VSD (0.8–1.3 V at 100 A), fast reverse recovery (trr = 59–60 ns), and high dv/dt immunity (3.1 V/ns at TJ = 175 °C), enabling reliable synchronous rectification and unclamped inductive switching in EPS and start-stop micro-hybrid control modules.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 40 V - Maximum drain-source blocking voltage; defines safe operating range in 12 V/48 V automotive bus applications.
RDS(on) typ. 0.50 mΩ at VGS = 10 V, ID = 100 A - Enables <1.5 W conduction loss at 360 A, critical for thermal management in compact EPS modules.
ID (pkg-limited) 360 A @ TC = 25 °C - Package-bound continuous current; sets PCB copper and heatsink sizing requirements for sustained high-power loads.
EAS (single pulse) 743 mJ (L = 0.15 mH) - Avalanche energy rating allowing safe unclamped inductive turn-off in battery switch and motor drive fault conditions.
Qg total 305–460 nC - Gate drive energy requirement; determines gate driver strength needed for <200 ns total switching time at 100 A.
TJ max +175 °C - Junction temperature limit enabling operation in under-hood environments without derating at ambient up to +125 °C.
RθJC 0.4 °C/W - Junction-to-case thermal resistance; enables direct mounting to cold plates with minimal thermal interface resistance.

Pinout & Package

Package: D2PAK-7TP (TO-263-7) - thermally enhanced surface-mount package with exposed drain pad and 7 terminals, optimized for high-current automotive PCB layouts and forced-air or cold-plate cooling.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Control input; requires 10 V drive for full enhancement; internal RG = 2.3 Ω limits ringing but increases switching time.
2 (S) Source Power return path; tied to PCB ground plane; body diode anode; critical for low-inductance source loop in high-di/dt applications.
3 (D) Drain Main power output; connected to exposed metal tab (pins 4–7); carries full load current; must be soldered to large copper area for thermal conduction.
4–7 (D) Drain (parallel) Four additional drain terminals sharing same internal node; reduce current density and parasitic inductance in high-frequency switching paths.

Key Features

Feature Design Value
Ultra-low RDS(on) 0.50 mΩ typ. - reduces I²R losses by >40% vs. prior-gen 40 V MOSFETs, enabling smaller heatsinks in EPS ECUs.
175 °C operation Rated junction temperature - eliminates need for external thermal derating in engine bay installations near exhaust or turbochargers.
Repetitive avalanche capability Rated per JEDEC JESD24-11 - allows repeated inductive turn-off events (e.g., solenoid de-energization) without degradation.
Fast body diode recovery trr = 59 ns, Qrr = 96 nC - minimizes cross-conduction loss and EMI in synchronous buck converters and H-bridge motor drivers.
AEC-Q101 qualified Automotive reliability standard - includes stress testing for temperature cycling, humidity, and mechanical shock per vehicle lifecycle requirements.

Applications

Electric Power Steering (EPS) Battery Disconnect Switch

Use Scenario: High-current motor phase switching in column-assist or rack-assist EPS modules requiring rapid torque response and fail-safe shutdown.

IC Role / Device Role / Timing Role: Main power switch controlling 3-phase inverter bridge; handles bidirectional current up to 360 A during assist and regenerative braking.

Use Value: 0.50 mΩ RDS(on) and 175 °C rating enable compact, oil-cooled motor controller designs meeting ISO 26262 ASIL-C functional safety requirements.

Use Scenario: Isolation of 12 V starter battery from vehicle electrical system during engine cranking or fault conditions.

IC Role / Device Role / Timing Role: High-side load switch activated by BCM or battery management IC; must sustain 300+ A surge during cold-cranking.

Use Value: 1440 A pulsed drain rating and 743 mJ avalanche energy ensure robustness against load dump transients and cranking overvoltage spikes.

Start/Stop Micro-Hybrid High-Power DC-DC Converter

Use Scenario: Controlling alternator field excitation and managing regenerative braking energy transfer in 48 V mild hybrid architectures.

IC Role / Device Role / Timing Role: Synchronous rectifier and energy routing switch in bi-directional DC-DC converter between 12 V and 48 V domains.

Use Value: Low Qgd/Qgs ratio (96/84 nC) and fast switching minimize dead-time losses, achieving >97% peak efficiency at 5 kW output.

Use Scenario: Primary switching element in high-current buck converter supplying 500 W+ auxiliary power to ADAS sensors and infotainment systems.

IC Role / Device Role / Timing Role: High-side power FET operating at 100–200 kHz; handles continuous 200 A output with forced-air cooling.

Use Value: 2.5 W/°C linear derating and 0.4 °C/W RθJC allow stable operation at full load with ΔT < 40 °C above heatsink, reducing thermal sensor overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N4LF8AG 40 V, 0.55 mΩ typ. RDS(on), DFN8 5×6 mm package, no exposed drain pad Limited to ≤150 A continuous due to package thermal resistance (RθJA = 1.2 °C/W) Preferred for space-constrained PCBs where peak current < 200 A and board-level cooling suffices.
IPB050N04LGATMA1 40 V, 0.50 mΩ typ. RDS(on), TO-263-7, but rated only to +150 °C TJ Requires 25 °C higher heatsink temp margin to avoid derating in under-hood use cases Valid for cabin-mounted modules (e.g., HVAC blowers), not engine compartment EPS or battery switches.

Compared with STL220N4LF8AG and IPB050N04LGATMA1, AUIRFSA8409-7P uniquely combines 0.50 mΩ on-resistance, +175 °C rating, and 743 mJ avalanche energy-making it the only option qualified for high-reliability, high-temperature, high-pulse-current roles like electric power steering main switch and 48 V battery disconnect.

Availability

AUIRFSA8409-7P is available at Aetrix Electronics and suitable for electric power steering (EPS), battery disconnect switches, and start-stop micro-hybrid systems requiring stable component supply across multi-year automotive production programs.

Supply support for AUIRFSA8409-7P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

AUIRFSA8409-7P belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, designed specifically for high-current, high-reliability switching in engine bay and chassis control units.

FAQ

What is the maximum continuous drain current for AUIRFSA8409-7P at 100 °C case temperature?

At TC = 100 °C, the continuous drain current is 370 A (silicon-limited) per the Absolute Maximum Ratings table. However, the package-limited rating remains 360 A regardless of case temperature, as bond wire current capacity does not increase with cooling. Designers must respect the lower of the two values-360 A-for long-term reliability.

Does AUIRFSA8409-7P support gate drive voltages below 10 V?

Yes-the gate threshold voltage VGS(th) ranges from 2.2 V to 3.9 V, enabling partial enhancement at 4.5–5.5 V. However, RDS(on) rises sharply below 10 V (e.g., 1.6 mΩ at VGS = 5.5 V), increasing conduction loss. Full-rated performance requires ≥10 V gate drive, and automotive gate drivers (e.g., INFINEON's 2EDL series) are recommended.

How is the D2PAK-7TP package different from standard D2PAK-3?

The D2PAK-7TP adds four extra drain terminals (pins 4–7) alongside the main drain tab, reducing current density per bond wire and lowering source inductance. This improves current sharing, thermal spreading, and high-frequency switching stability-critical for >100 kHz DC-DC converters and EPS inverters where dI/dt exceeds 500 A/µs.

Is avalanche energy rating specified for repetitive operation?

Yes-Figure 15 shows repetitive avalanche energy (EAR) up to 600 mJ at TJ = 25 °C and 1% duty cycle. The device is qualified for repetitive unclamped inductive switching per AN-1005 methodology, provided average power dissipation stays within thermal limits and junction temperature remains ≤175 °C during each event.

AUIRFSA8409-7P Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-7, D2PAK (6 Leads + Tab)
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
523A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
0.69mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
460 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
13975 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
375W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-7

AUIRFSA8409-7P FAQ

1.How can I place an order for AUIRFSA8409-7P through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFSA8409-7P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFSA8409-7P reliable?

The price and inventory of AUIRFSA8409-7P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFSA8409-7P is usually 5 days.

3.What payment methods are accepted for AUIRFSA8409-7P?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFSA8409-7P transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFSA8409-7P?

AUIRFSA8409-7P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFSA8409-7P order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFSA8409-7P?

For technical support, including AUIRFSA8409-7P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFSA8409-7P requirements.

6.How does Aetrix verify that AUIRFSA8409-7P is sourced from the original manufacturer or authorized distributors?

All AUIRFSA8409-7P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFSA8409-7P meets industry standards.

7.What is the process for return or replacement of AUIRFSA8409-7P?

All AUIRFSA8409-7P units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFSA8409-7P, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFSA8409-7P part is unused and in its original packaging.

Return procedure for AUIRFSA8409-7P:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AUIRFSA8409-7P Tags

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