Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies AUIRFSL4010

Part No.:
AUIRFSL4010
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixAUIRFSL4010.pdf
Description:
MOSFET N CH 100V 180A TO262
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,090

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AUIRFSL4010 from Infineon is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in TO-262 (I²PAK) package, rated for 100 V VBRDSS, 3.9 mΩ typ. RDS(on) at VGS = 10 V and ID = 106 A, 175°C maximum junction temperature, and qualified to AEC-Q101. It serves as a high-current main switch in 12 V/24 V automotive powertrain and body control modules.

For engineers reviewing the AUIRFSL4010 datasheet, AUIRFSL4010 pinout, AUIRFSL4010 application, or AUIRFSL4010 equivalent, key selection criteria include its 180 A continuous drain current at TC = 25°C, 318 mJ single-pulse avalanche energy, 143 nC total gate charge, and TO-262 thermal resistance of 0.40°C/W (junction-to-case).

Technical Context

This MOSFET employs Infineon's advanced planar HEXFET process optimized for low RDS(on)/area and robust unclamped inductive switching. Its gate threshold voltage (2.0–4.0 V) enables compatibility with standard 10 V gate drivers, while the 175°C operating temperature supports under-hood deployment without derating in high-ambient environments.

The device integrates a fast-recovery body diode with trr = 72 ns (TJ = 25°C), Qrr = 210 nC, and dv/dt capability up to 31 V/ns - enabling efficient synchronous rectification and hard-switched DC-DC topologies in automotive ADAS and EPS systems.

Key Specifications

ParameterValue and Actual Design Meaning
VBRDSS100 V - Withstands 100 V drain-source blocking voltage before avalanche onset; suitable for 24 V nominal battery systems with load dump transients.
RDS(on) typ.3.9 mΩ @ VGS = 10 V, ID = 106 A - Enables <1 W conduction loss at 180 A, critical for high-efficiency motor drive inverters.
ID cont. @ TC = 25°C180 A - Supports high-power solenoid actuation and HVAC blower control without external heatsink in compact layouts.
EAS318 mJ - Specifies single-pulse avalanche energy limit; allows safe operation during inductive turn-off in relay driver and fuel injector circuits.
Qg max.215 nC - Determines gate driver strength requirement; necessitates ≥2 A peak sourcing/sinking capability for 50 ns switching transitions.
RθJC0.40 °C/W - Confirms direct thermal path from die to case; enables precise junction temperature estimation using case temperature measurement.
tr/tf86 ns / 77 ns - Fast switching reduces switching losses in 20–100 kHz PWM applications like electric power steering (EPS) motor controllers.

Pinout & Package

TO-262 (I²PAK) package with isolated mounting tab. Three terminals: Gate (G), Drain (D), Source (S). Case is electrically connected to Drain.

Pin/TerminalCircuit RoleDesign Meaning
GControl inputReceives gate drive signal; requires 10 V for full enhancement; internal RG = 2.0 Ω limits dV/dt-induced ringing.
DHigh-side power pathConnected to load supply rail; shares thermal interface with package base; must be routed for minimal inductance in high-di/dt paths.
SPower return referenceSource node ties to system ground or low-side switch; forms common reference for gate drive and current sensing.

Key Features

FeatureDesign Value
Automotive qualificationAEC-Q101 qualified for engine bay use; validated across -55°C to +175°C ambient with zero defects in HTOL and TC testing.
Ultra-low on-resistance3.9 mΩ typ. RDS(on) reduces conduction loss by >35% vs. legacy 100 V MOSFETs, directly improving system efficiency in 48 V mild-hybrid architectures.
Repetitive avalanche ratingRated for repetitive avalanche events up to TJmax; eliminates need for external snubbers in inductive load switching (e.g., fuel injectors, ABS solenoids).
Fast body diode recoverytrr = 72 ns and Qrr = 210 nC enable clean commutation in bidirectional DC-DC converters used in vehicle-to-load (V2L) inverters.

Applications

Electric Power Steering (EPS)Automotive HVAC Blower Control

Use Scenario: High-current H-bridge driving 3-phase brushless motor in column-assist EPS systems.

IC Role / Device Role / Timing Role: Main high-side and low-side switching element; handles 150 A peak phase current with <100 ns dead-time tolerance.

Use Value: 3.9 mΩ RDS(on) minimizes heat generation in confined steering column space; 175°C rating ensures reliability during sustained assist maneuvers.

Use Scenario: PWM-controlled DC motor driver for cabin air distribution flaps and blower fans.

IC Role / Device Role / Timing Role: Low-side switch in high-side driven configuration; operates at 20 kHz PWM with 100% duty cycle capability.

Use Value: 180 A continuous rating supports fan stall current; fast tr/tf suppresses EMI in passenger compartment wiring harnesses.

Fuel Injector Driver12 V/24 V DC-DC Converter Primary Switch

Use Scenario: High-speed switching of solenoid-type gasoline/diesel injectors in engine control units (ECUs).

IC Role / Device Role / Timing Role: Unclamped inductive switch; absorbs stored coil energy via controlled avalanche.

Use Value: 318 mJ EAS and repetitive avalanche support eliminate external freewheeling diodes; reduces BOM count and PCB area.

Use Scenario: Primary-side switch in isolated flyback or forward converter powering infotainment and ADAS domain controllers.

IC Role / Device Role / Timing Role: Hard-switched 100 kHz power transistor; withstands 100 V input transients during cold-crank and load-dump conditions.

Use Value: 0.40°C/W RθJC enables direct heatsink mounting; low Qg improves light-load efficiency in always-on domains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N10F7100 V, 2.2 mΩ typ. RDS(on), TO-220FP package, 175°C rating, but lower ID = 120 A @ TC = 25°CSmaller package footprint; higher RθJA limits power density in high-ambient environmentsSelect when board space is constrained and peak current ≤120 A; verify thermal margin with PCB copper area.
IPB180N10N3 G100 V, 1.8 mΩ typ. RDS(on), TO-263 (D2PAK), 175°C, but non-AEC-Q101 qualifiedLacks automotive qualification; not approved for safety-critical powertrain functions per ISO 26262Acceptable only for non-safety body electronics; requires full requalification for ECU integration.

Compared with STL220N10F7 and IPB180N10N3 G, AUIRFSL4010 delivers optimal balance of 180 A current handling, AEC-Q101 compliance, and TO-262 thermal performance - making it the preferred choice for production-grade EPS and fuel injection systems where reliability and regulatory approval are mandatory.

Availability

AUIRFSL4010 is available at Aetrix Electronics and suitable for electric power steering (EPS), automotive HVAC blower control, fuel injector driver, and 12 V/24 V DC-DC converter primary switch applications requiring stable component supply across multi-year vehicle production cycles.

Supply support for AUIRFSL4010 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

AUIRFSL4010 belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine control, chassis, and body electronics under extreme thermal and electrical stress.

FAQ

What is the maximum continuous drain current for AUIRFSL4010 at 100°C case temperature?

The maximum continuous drain current is 127 A at TC = 100°C and VGS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat dissipation capacity at elevated case temperatures, and must be verified against actual PCB layout and heatsink performance.

Does AUIRFSL4010 have a built-in body diode, and what are its key recovery parameters?

Yes, AUIRFSL4010 integrates a monolithic p-n junction body diode. Key recovery parameters include reverse recovery time trr = 72 ns (TJ = 25°C), Qrr = 210 nC, and peak reverse recovery current IRRM = 5.3 A - all measured at VDD = 85 V, IF = 106 A, and di/dt = 100 A/µs.

Can AUIRFSL4010 be used in parallel configurations, and what layout considerations apply?

Yes, AUIRFSL4010 supports paralleling for higher current capacity. Critical layout requirements include matched gate trace lengths (<5 mm difference), Kelvin source connections to minimize current imbalance, and symmetrical thermal mounting to ensure uniform junction temperature rise across devices.

What is the gate threshold voltage range, and how does it vary with temperature?

The gate threshold voltage VGS(th) ranges from 2.0 V to 4.0 V at TJ = 25°C, with a positive temperature coefficient of ~0.1 V/100°C. At 175°C, typical VGS(th) increases to ~3.2 V, ensuring enhanced short-circuit immunity during overtemperature events.

AUIRFSL4010 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Not For New Designs
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
4.7mOhm @ 106A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
215 nC @ 10 V
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
9575 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
375W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-262

AUIRFSL4010 FAQ

1.How can I place an order for AUIRFSL4010 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFSL4010 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFSL4010 reliable?

The price and inventory of AUIRFSL4010 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFSL4010 is usually 5 days.

3.What payment methods are accepted for AUIRFSL4010?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFSL4010 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFSL4010?

AUIRFSL4010 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFSL4010 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFSL4010?

For technical support, including AUIRFSL4010 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFSL4010 requirements.

6.How does Aetrix verify that AUIRFSL4010 is sourced from the original manufacturer or authorized distributors?

All AUIRFSL4010 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFSL4010 meets industry standards.

7.What is the process for return or replacement of AUIRFSL4010?

All AUIRFSL4010 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFSL4010, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFSL4010 part is unused and in its original packaging.

Return procedure for AUIRFSL4010:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AUIRFSL4010 Tags

  • AUIRFSL4010
  • AUIRFSL4010 PDF
  • AUIRFSL4010 Datasheet
  • AUIRFSL4010 Specifications
  • AUIRFSL4010 Images
  • Infineon Technologies
  • Infineon Technologies AUIRFSL4010
  • Buy AUIRFSL4010
  • AUIRFSL4010 Price
  • AUIRFSL4010 Distributor
  • AUIRFSL4010 Supplier
  • AUIRFSL4010 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER